Abstract
Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine the parameters of its equivalent circuit. By using numerical simulation we show that the coplanar transmission line with the RTD under study provides an amplification up to 8 GHz. Keywords: Resonant tunneling diodes, active microstrip transmission lines, distributed emitters, diodes with double metal contacts.
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