Random Lasing Threshold Research Articles

Random lasing in ZnO nanocrystals

Nanocrystalline ZnO powders can act as gain and scattering medium in a random laser where the light emission can be strongly amplified. In this work, we compare the luminescence properties of samples with different particle sizes in the regime of linear and nonlinear optics. In the high-excitation regime random lasing is observed in all samples. Here, the lasing threshold depends strongly on the size distribution in the ensemble. Additional characterization of the samples has been done by determining the absolute quantum efficiency of the radiative processes in the powder. The values are in the 10% range and the near-edge luminescence is strongly influenced by the particle sizes. We show that by annealing the nanocrystals coalesce to larger polycrystalline grains, which results in a new emission band at 3.333 eV due to the grain boundaries. Furthermore, it is found that in the annealed samples the threshold for random lasing could be considerably decreased.

Calculating the threshold of random laser by using Monte Carlo method

We put forward a model of calculating the threshold gain of random laser, a method for obtaining the distribution function and the relevant random variables according to the mean free path and scattering intensity distribution. The distribution functions are derived for isotropic scattering of light, and then we get the random variables according with the distribution at every scattering. Simulating the random walk of photons in random media by using Monte Carlo method, the threshold of random laser is got. The relationship of the threshold gain to the photon mean free path, the radius of gain zone, the depth of gain zone and light absorption coefficient of non-gain zone is discussed. We make some suggestions to lower the threshold. The theoretical results agree with the experimental data.

Random lasing in porous scattering medium

The spectrum behavior evolution and the threshold of random lasing depending on the way of photon walk randomization in an active random medium were investigated. The following three ways of photon walk randomization were implemented: multiple light scattering by corundum and silica particles embedded into a solid polymer solution of dye (astrafloxin), multiple light reflection at sub-millimeter extensive air pores (mean diameter 200 μm) produced in the medium, and the combined action of both these effects. The most effective lasing is observed in the case of an active medium with air pores and scattering particles in the interpore space. Such a combined porous scattering medium acts as a network of dielectric waveguides transmitting effectively the random light. This spatial structure of the random active medium significantly increases the photon path in the medium, thereby promoting photon multiplication due to stimulated emission. In this combined medium the random lasing reveals the narrowest spectrum, the lowest threshold, and the highest density of spectral energy in the spectrum maximum.

Threshold of random lasers in the incoherent transport regime

We study the threshold of random lasers in the regime of incoherent transport. We present a time-dependent three-dimensional model based on the radiative transfer equation and rate equations, allowing us to describe the various transport regimes (ballistic, multiple scattering, diffusive). Numerical simulations based on this model allow us to describe the main features of the lasing threshold. We develop a modal theory of random lasers with incoherent feedback, based on the disordered-averaged modes of the radiative transfer equation. As a first example, we show that this approach predicts the lasing threshold for systems with sizes $L$ ranging from $L\ensuremath{\sim}{l}_{s}$ (single-scatttering regime) to $L⪢{l}^{*}$ (diffusive regime).

Erratum: Universal fluctuations of the random lasing threshold in a sample of a finite area [Phys. Rev. B71, 054203 (2005)

Erratum: Universal fluctuations of the random lasing threshold in a sample of a finite area [Phys. Rev. B<b>71</b>, 054203 (2005)

Dependence of the neodymium random laser threshold on the diameter of the pumped spot

We experimentally studied the dependence of the threshold energy density E/sub th//S in Nd/sub 0.5/La/sub 0.5/Al/sub 3/(BO/sub 3/)/sub 4/ random laser on the diameter of the pumped spot d and found that at d/spl ges/130/spl mu/m, E/sub th//S is proportional to 1/d+const. This functional dependence is different from the one commonly expected in the case of diffusion, /spl prop/1/d/sup 2/+const. However, the obtained experimental dependence does not mean the failure of the diffusion model. Calculating the mean photon's residence time /spl tau//sub res//sup p/ (which photons, making their diffusion-like random walks, spend inside the gain volume) as the function of d and further assuming that E/sub th//S/spl prop/(/spl tau//sup p//sub res/)/sup -1/, we predicted the experimentally obtained functional dependence, /spl prop/1/d+const. The major difference between our model and that of and was in the boundary conditions.

Electronic control of nonresonant random lasing from a dye-doped smectic A* liquid crystal scattering device

The electronic control of the excitation threshold for random lasing in a dye-doped smectic A* liquid crystal is demonstrated. Random lasing is the term given to the nonlinear amplification of light which is the result of feedback due to multiple scattering. With the application of an electric field the smectic A* phase forms a highly scattering texture for which the nonlinear amplification of light occurs at an excitation threshold of 10μJ∕pulse. In comparison, nonlinear amplification is not observed in the field induced homeotropic texture. As a result, a device has been conceived and demonstrated whereby random lasing is switched “on” or “off” with an applied electric field.

Universal fluctuations of the random lasing threshold in a sample of a finite area

We consider the random lasing from a weakly scattering medium and demonstrate that the distribution of the threshold gain over the ensemble of statistically independent finite-size samples is universal. Universality stems from the facts that: (i) lasing threshold in a given sample is determined by the highest-quality mode of all the random resonators present in the sample, and (ii) the areal {\em density} of the random resonators decays sharply with the quality factor of the mode that they trap. We find analytically the shape of the universal distribution function of the lasing threshold. The shape of this function is governed by a single dimensionless parameter, $\beta$. This parameter increases as a power law with $\ln S$, where $S$ is the sample area (length, volume), and decreases as a power law with disorder strength. The powers depend on the microscopic mechanism of the light trapping. As a result, the distribution of the thresholds narrows with $S$ and broadens with the disorder strength.

Effect of ZnO Nanostructures on 2-Dimensional Random Lasing Properties

We show results on how the morphology of a ZnO layer can have a big impact on the random lasing threshold of the material. Plasma-enhanced chemical vapor deposition method is used to grow ZnO layers on sapphire substrates. The morphologies and structures of ZnO are observed to undergo transition when growth temperature decreases from 750 to 100 °C: the deposited ZnO changes from crystalline films to nanocrystalline films with columnar-shaped grains, then to well-aligned ZnO nanorods, and finally to randomly oriented irregular-shaped grains. ZnO nucleation and surface diffusion rates, coalescence between crystal grains, and preferential growth along c-axis play important roles in this transition from continuous films to nanorods. Random lasing properties of our ZnO films and nanorods are studied. The scattering ability of ZnO is critical to control the lasing properties. The lowest lasing thresholds are observed for ZnO films grown between 500 and 600 °C when the films have columnar-shaped grains and not at 750 °C when the ZnO layer has a continuous crystalline film. Calculations based on quasi-2D random lasing are consistent with the experimental results of lasing threshold measurements.

Random lasing in closely packed resonant scatterers

We report experimental and theoretical studies of the random lasing threshold and its fluctuation in an ensemble of highly packed spherical dielectric scatterers. The ratio of the sphere diameter to the lasing wavelength was varied in a wide range, which covered the transition from the weak Rayleigh scattering regime to the strong Mie scattering regime. Experimentally, when the diameters of monodispersed ZnO spherical particles changed from less than 100 to more than 600 nm we observed a drastic decrease of the lasing threshold at small-particle size followed by a plateau at large particle size. We attribute this effect to the particle-size dependence of transport mean free path lt, which was deduced from coherent backscattering measurements. Theoretical calculation of lt reproduced experimental behavior. Using the finite-difference time domain method, we obtained the lasing threshold and its standard deviation as functions of particle size in two-dimensional systems. The results of our numerical simulations are in qualitative agreement with the experimental data.

Influence of spatial correlations on the lasing threshold of random lasers

The lasing threshold of a random laser is computed numerically from a generic model. It is shown that spatial correlations of the disorder in the medium (i.e., dielectric constant) lead to an increase of the decay rates of the eigenmodes and of the lasing threshold. This is in conflict with predictions that such correlations should lower the threshold. While all results are derived for photonic systems, the computed decay rate distributions also apply to electronic systems.

Decay rate distributions of disordered slabs and application to random lasers.

We compute the distribution of the decay rates (also referred to as residues) of the eigenstates of a disordered slab from a numerical model. From the results of the numerical simulations, we are able to find simple analytical formulas which describe these results well. This is possible for samples both in the diffusive and in the localized regimes. As an example of a possible application, we investigate the lasing threshold of random lasers.

Effect of external feedback on lasing in random media

We have studied the effect of external feedback on random laser action in ZnO polycrystalline thin films. Reinjection of light into scattering-formed cavities strongly influences modes, intensity, and threshold of random lasers. We have compared the effect of external feedback from the side of the film and that from the film surface. Our study opens the possibility of controlling random laser frequencies by external feedback.