An attempt is made to study the photo-emission from bulk specimens of quaternary alloys on the basis of three-band Kane model. It is found, taking In1−xGaxAsyP1−y lattice matched to InP as an example, that the photo-emission increases, with increasing carrier degeneracy and decreasing alloy composition respectively. The valence band splitting parameter influences significantly the numerical magnitude of the photo-emission in both cases. The corresponding well-known results of parabolic semiconductors having nondegenerate electron concentration have also been obtained as special cases from our generalized expressions, under certain limiting conditions.