On the gate capacitance in n-channel inversion layers on ternary semiconductors under magnetic quantization

Abstract

An attempt is made to derive a generalized expression of the magnetogate capacitance in the n-channel inversion layers on ternary semiconductors without any approximations of weak or strong electric-field limits and taking into account the influences of electron spin and Dingle temperature, respectively. It is found on the basis of the three-band Kane model and taking n-channel inversion layers on Hg1−xCdxTe as an example, that the gate capacitance exhibits oscillations with the changing magnetic field and the oscillatory behavior is in qualitative agreement with the experimental observation reported in the literature for metal-oxide-semiconductor structures of the same semiconductor.