Thin Titanium Layer Research Articles

A Low-Temperature Alumina/Copper Diffusion Bonding Process using La-Doped Titanium Interlayers

Ceramic-to-metal heterojunctions have been established to improve high-temperature stability for applications in aerospace and harsh environments. In this work, we employed low-temperature diffusion bonding to realize an alumina/Cu heterogeneous joint. Using a thin layer of lanthanum-doped titanium (La-doped Ti) to metallize the alumina surface, we achieved the bonding at a temperature range of 250–350 °C. We produced a uniform, thermally stable, and high-strength alumina/Cu joint after a hot-press process in vacuum. Signals from X-ray diffraction (XRD) suggested the successful diffusion of Ti and La into the alumina substrate, as Ti can easily substitute Al in alumina, and La has a better oxygen affinity than that of Al. The transmission electron microscopy and XRD results also showed the existence of CuxTiyO phases without CuxTiy or LaOx. In addition, the bonding strength of alumina/copper hot-pressed at 250, 300, and 350 °C were 7.5, 9.8 and 15.0 MPa, respectively. The process developed in this study successfully lowered the bonding temperature for the alumina/copper joint.

Partial replacement in CISe solar cells of the molybdenum layer by an epitaxial Titanium Nitride thin film deposited onto MgO substrate

Currently, Molybdenum represents the best rear contact used in thin film Solar Cells, based on chalcopyrites Cu(In,Ga)(S,Se)2 or CZTS for instance. However, its high price increases the solar cell cost and comes against the generalization of the photovoltaic energy. In order to overcome this fact, it is proposed in this work to replace partially Molybdenum by Titanium Nitride (TiN) in CuInSe2 Solar Cells. The TiN layers were deposited by radiofrequency magnetron sputtering with substrate temperature fixed at 25 °C, 500 °C or 700 °C, for two RF powers (150W, 200W). It is found that the sample deposited at 700 °C shows the optimal stoichiometry (Ti/N = 0.95), with a good crystallinity, a texturation along the (h00) planes and an epitaxial growth confirmed by phi-scans. The introduction of TiN in the rear contact requires the deposition of a thin Titanium layer as a buffer layer to improve the adherence of the TiN film. After analyzing the TiN/Ti/MgO structure, it is found that the Ti intermediate layer doesn’t affect the TiN crystalline orientation, the stoichiometry remains close to 1 (Ti/N = 0.94) in addition with a homogenous morphological surface.

Ti:Pt:Au:Ni thin-film CVD diamond sensor ability for charged particle detection

This work demonstrates the development of diamond sensors with reliable contacts using a new metallization formula, which can operate under high-pressure gas environment. The metallization was created using thin film layers of titanium, platinum, gold and nickel deposited on a single crystal electronic grade CVD diamond chip. The contacts were 2 mm in diameter with thickness of 50/5/20/150 nm of Ti:Pt:Au:Ni. The optimum operating voltage of the sensor was determined from the current-voltage measurements. The sensor was calibrated with 239Pu and 241Am alpha radiation sources at 300 V. The energy resolution of the Ti:Pt:Au:Ni diamond sensor was determined to be 7.6% at 5.2 MeV of 239Pu and 2.2% at 5.48 MeV of 241Am. The high-pressure gas loading environment under which this sensor was used is discussed. Specifically, experimental observations are described using hydrogen loading of nickel as a means of initiating low energy nuclear reactions. No neutrons, electrons, ions or other ionizing radiations were observed in these experiments.

Flexible Calorimetric Gas Sensors for Detection of a Broad Concentration Range of Gaseous Hydrogen Peroxide: A Step Forward to Online Monitoring of Food‐Package Sterilization Processes

In this study, flexible calorimetric gas sensors are developed for specific detection of gaseous hydrogen peroxide (H2O2) over a wide concentration range, which is used in sterilization processes for aseptic packaging industry. The flexibility of these sensors is an advantage for identifying the chemical components of the sterilant on the corners of the food boxes, so‐called “cold spots”, as critical locations in aseptic packaging, which are of great importance. These sensors are fabricated on flexible polyimide films by means of thin‐film technique. Thin layers of titanium and platinum have been deposited on polyimide to define the conductive structures of the sensors. To detect the high‐temperature evaporated H2O2, a differential temperature set‐up is proposed. The sensors are evaluated in a laboratory‐scaled sterilization system to simulate the sterilization process. The concentration range of the evaporated H2O2 from 0 to 7.7% v/v was defined and the sensors have successfully detected high as well as low H2O2 concentrations with a sensitivity of 5.04 °C/% v/v. The characterizations of the sensors confirm their precise fabrication, high sensitivity and the novelty of low H2O2 concentration detections for future inline monitoring of food‐package sterilization.

Conversion treatment of thin titanium layer deposited on carbon steel

The present study has been conducted in order to obtain titanium carbide layer using a conversion treatment consisting of two main steps. In the first step a thin pure titanium layer was deposited on 120C4 carbon steel by PVD. In the second step, the carbon atoms from the substrate diffuse to the titanium coating due to a vacuum annealing treatment and the Ti coating transforms into titanium carbide. Depending on the annealing temperature a partial or complete conversion into TiC is obtained. The hardness of the layer can be expected to differ depending on the processing temperatures. By a systematic study of the hardness as a function of the applied load, we confirm the process of growth of the layer.

Effect of absorbing coating on ablation of diamond by IR laser pulses

We study the possibility of increasing the efficiency and quality of laser ablation microprocessing of diamond by preliminary forming an absorbing layer on its surface. The laser pulses having a duration of 1 ps and 10 ns at a wavelength of 1030 nm irradiate the polycrystalline diamond surface coated by a thin layer of titanium or graphite. We analyse the dynamics of the growth of the crater depth as a function of the number of pulses and the change in optical transmission of the ablated surface. It is found that under irradiation by picosecond pulses the preliminary graphitisation allows one to avoid the laser-induced damage of the internal diamond volume until the appearance of a self-maintained graphitised layer. The absorbing coating (both graphite and titanium) much stronger affects ablation by nanosecond pulses, since it reduces the ablation threshold by more than an order of magnitude and allows full elimination of a laser-induced damage of deep regions of diamond and uncontrolled explosive ablation in the near-surface layer.

Preparation and characterization of 33S samples for 33S(n,[formula omitted])30Si cross-section measurements at the n_TOF facility at CERN

Thin 33S samples for the study of the 33S(n,α)30Si cross-section at the n_TOF facility at CERN were made by thermal evaporation of 33S powder onto a dedicated substrate made of kapton covered with thin layers of copper, chromium and titanium. This method has provided for the first time bare sulfur samples a few centimeters in diameter. The samples have shown an excellent adherence with no mass loss after few years and no sublimation in vacuum at room temperature. The determination of the mass thickness of 33S has been performed by means of Rutherford backscattering spectrometry. The samples have been successfully tested under neutron irradiation.

All-in-One Derivatized Tandem p+n-Silicon-SnO2/TiO2 Water Splitting Photoelectrochemical Cell.

Mesoporous metal oxide film electrodes consisting of derivatized 5.5 μm thick SnO2 films with an outer 4.3 nm shell of TiO2 added by atomic layer deposition (ALD) have been investigated to explore unbiased water splitting on p, n, and p+n type silicon substrates. Modified electrodes were derivatized by addition of the water oxidation catalyst, [Ru(bda)(4-O(CH2)3PO3H2)-pyr)2], 1, (pyr = pyridine; bda = 2,2'-bipyridine-6,6'-dicarboxylate), and chromophore, [Ru(4,4'-PO3H2-bpy) (bpy)2]2+, RuP2+, (bpy = 2,2'-bipyridine), which form 2:1 RuP2+/1 assemblies on the surface. At pH 5.7 in 0.1 M acetate buffer, these electrodes with a fluorine-doped tin oxide (FTO) back contact under ∼1 sun illumination (100 mW/cm2; white light source) perform efficient water oxidation with a photocurrent of 1.5 mA/cm2 with an 88% Faradaic efficiency (FE) for O2 production at an applied bias of 600 mV versus RHE ( ACS Energy Lett. , 2016 , 1 , 231 - 236 ). The SnO2/TiO2-chromophore-catalyst assembly was integrated with the Si electrodes by a thin layer of titanium followed by an amorphous TiO2 (Ti/a-TiO2) coating as an interconnect. In the integrated electrode, p+n-Si-Ti/a-TiO2-SnO2/TiO2|-2RuP2+/1, the p+n-Si junction provided about 350 mV in added potential to the half cell. In photolysis experiments at pH 5.7 in 0.1 M acetate buffer, bias-free photocurrents approaching 100 μA/cm2 were obtained for water splitting, 2H2O → 2H2 + O2. The FE for water oxidation was 79% with a hydrogen efficiency of ∼100% at the Pt cathode.

Anodic dissolution of vanadium in molten LiCl–KCl–TiCl2

The mechanism of anodic dissolution of pure vanadium in a titanium-enriched alkali chloride molten salt was investigated to determine whether it can be used as an ion source for a continuous Ti–V alloy deposition process. This study represents the first step towards the preparation of ternary Ti–Al–V alloys. Cyclic voltammetry as well electrochemical impedance spectroscopy (EIS) was performed and potentials for dissolution experiments were determined. Additionally, the influence of anode morphologies on the dissolution process, as a consequence of pre-treatment, was investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Results indicate that anodic vanadium dissolution is possible, but hindered by the electroless formation of a thin titanium layer. Additionally, a secondary reaction, namely the oxidation of Ti2+ ions, takes place, lowering the current efficiency of the process. Morphology investigations revealed the risk of grain detachment (material loss) from the vanadium electrode, which is critical in direct dissolution, whereas under indirect dissolution conditions, passivation impedes the controlled process. Thus, electrolysis is best carried out with coarse-grained vanadium electrodes in the direct dissolution range.

Novel thin functional coatings for paper by foam coating

Conventional coating methods are currently being challenged by newly developed technologies that can result in products with interesting properties and competitive prices. Versatile foam coating is one such promising technology. Foam coating is carried out using different foam application methods, and the viscoelastic nature of the foam allows the use of a large variety of materials. Paper was coated with nanomaterials on a pilot scale using a method based on slot die application combined with foam destruction by absorption and infrared drying. A thin layer of titanium dioxide/zinc oxide (TiO2/ZnO) functionalized cellulose nanofibrils (CNF) creates antimicrobial properties in the paper, and a thin layer of CNF-TiO2 alone has substantial ability to oxidize nitric oxide (NO) and nitrogen oxides (NOx). These results illustrate methods that can be used to create novel functional properties for different end-use applications. Thin functional layers could bring added value to current products and also create opportunities to introduce novel products for several industrial areas using web-type manufacturing processes.

Mechanical/Structural Properties of Ag, Cu, and Ni Thin Films

Metallic films of Ag, Cu, and Ni, each of four different thicknesses (150, 300, 600 and 1000 nm) were deposited on Si using E-beam evaporation. A shutter was used to successively cover increments of 1″ of the wafer at a time, starting with the wafer fully uncovered. A thin titanium layer of 10 nm is first deposited over the entire Si wafers followed by 150, 300, 600, and 1000 nm of the 2″ target material. Vacuum conditions at the start were ∼1 × 10−7 torr and reached as high as 2 × 10−6 torr during the copper deposition due to outgassing. The structural and surface properties were explored using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The nanomechanical properties were measured using nanoindentation to determine the modulus and hardness of the Ag, Cu, and Ni films. Nanocrystalline grain structure formation is observed to dominate the crystal film growth. The hardness increases as the film thickness decreases, and remains nearly flat with depth for the same film, except for the very thin films as they suffer from what is known as the tapping effect.

Flexible anodized aluminum oxide membranes with customizable back contact materials

Anodized aluminum oxide (AAO) membranes were fabricated using flexible substrate/carrier material. This method facilitates the use of AAO templates with many different materials as substrates that are otherwise incompatible with most anodization techniques. Thin titanium (Ti) and tungsten (W) layers were employed as interlayer materials. Titanium enhances adhesion. Tungsten not only helps eliminate the barrier layer but also plays a critical role in enabling the use of flexible substrates. The resulting flexible templates provide new, exciting opportunities in photovoltaic and other device applications. CuInSe2 nanowires were electrochemically deposited into porous AAO templates with molybdenum (Mo) as the back contact material. The feasibility of using any material to form a contact with semiconductor nanowires has been demonstrated for the first time enabling new avenues in photovoltaic applications.

Low-Temperature Photochemical Conversion of Organometallic Precursor Layers to Titanium(IV) Oxide Thin Films

Thin layers of titanium(IV) ethoxide [Ti(OEt)4] as a metal–organic precursor were spin-coated onto silicon wafers under inert conditions and subsequently photochemically converted to thin titanium(IV) oxide (TiOx) films employing vacuum ultraviolet (VUV) radiation from a xenon excimer lamp. The photochemical conversion was performed below 35 °C and at ambient pressure in a nitrogen atmosphere with an optimized content of oxygen. Ti(OEt)4 decomposition and its kinetics were monitored and analyzed by gas chromatography and infrared spectroscopy. Precursor layers with a thickness between 270 and 1060 nm could be converted into much thinner TiOx films (40–165 nm). The decrease in thin film thickness was found to coincide with the removal of organic side chains and densification to a compact oxide network. For precursor layers with a thickness of up to 550 nm, VUV irradiation with a moderate radiant exposure (He) of 2.3 J cm–2 led to almost carbon-free amorphous layers with a composition close to stoichiometri...

Mechanical/Structural Properties of the Key Thin Film Materials Ag, Cu, & Ni for Electronics Applications

Thin metallic films and coatings of Ag, Cu, and Ni for interconnect and contact in next generation nanoelectronic are expected to have high conductivity, high temperature stability, good ohmic contacts to both p- and n- type semiconductors, and also superb mechanical properties. These metallic thin film are used in a variety of electronic applications due to their low cost of production, non-toxicity and excellent electrical conductivity. However, their applications in nanoelectronics are still limited due to diffusion into the commonly used silicon substrates and the tendency of developing oxides under atmospheric conditions. Thin oxide layers form immediately on metallic films surfaces’ upon contact with air even at room temperature. Thin metallic oxide films `tend to exhibit brittle behavior with a sharp jump in the mechanical properties such as hardness and modulus and results in high resistivity. Although the formation of oxides is still perceived as the primary impediment in using thin metallic films in nanoelectronics, thin metallic films exhibit promising applications in large-area electronics such as memories, MEMS, and microprocerssors. Metallic films of Ag, Cu, and Ni each of 150, 300, 600 and 1000 nm thick were deposited on Si using E-beam evaporation and deposition technique. A shutter was used to successively cover increments of 1² of the wafer at a time, starting with the wafer fully uncovered. A thin titanium layer of 10 nm is first deposited over the entire Si wafers followed by 150, 300, 600, and 1000 nm of the 2² target. Vacuum conditions at the start were ~1x10-7 torr and reached as high as 2x10-6 torr during the copper deposition due to outgassing. Similar vacuum conditions were maintained for the other films. The Ag, Cu, and Ni films thickness were verified using field emission scanning electron microscopy. A sample cross sectional FE-SEM of the 150 nm thick Ag film is shown in Figure1. Nanocrstalline grain structure formation is observed to dominate the crystal film growth. The nanomechanical properties were measured using nanoindentation to determine the modulus and hardness of the Ag, Cu, and Ni films. Indentations of 1/3 and 2/3 of the film thickness in addition to 2 µm deep indents were performed on each film to study the film properties irrespective of the Si substrate influence as well as the substrate influence on the mechanical properties. Figures 2 and 3 depict hardness versus normalized depth of indentation to film thickness for Ag and Cu. The hardness increases as the film thickness decreases and remains nearly flat (no size effects) for the same film with depth of indentation except for the very thin films as they suffer what is known as tapping effect [1].

Mechanical/Structural Properties of the Key Thin Film Materials Ag, Cu, & Ni for Electronics Applications

Metallic films of Ag, Cu, and Ni each of 150, 300, 600 and 1000 nm thick were deposited on Si using E-beam evaporation deposition technique. A shutter was used to successively cover increments of 1² of the wafer at a time, starting with the wafer fully uncovered. A thin titanium layer of 10 nm is first deposited over the entire Si wafers followed by 150, 300, 600, and 1000 nm of the 2² target material. Vacuum conditions at the start were ~1x10-7 torr and reached as high as 2x10-6 torr during the copper deposition due to outgassing. The structural and surface properties were explored using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The nanomechanical properties were measured using nanoindentation to determine the modulus and hardness of the Ag, Cu, and Ni films. Nanocrystalline grain structure formation is observed to dominate the crystal film growth. The hardness increases as the film thickness decreases and remains nearly flat for the same film with depth except for the very thin films as they suffer what is known as tapping effect.

Isoelectronic determination of the thermal Casimir force

Differential force measurements between spheres coated with either nickel or gold and rotating disks with periodic distributions of nickel and gold are reported. The rotating samples are covered by a thin layer of titanium and a layer of gold. While titanium is used for fabrication purposes, the gold layer (nominal thicknesses of 21, 37, 47 and 87 nm) provides an isoelectronic environment, and is used to nullify the electrostatic contribution but allow the passage of long wavelength Casimir photons. A direct comparison between the experimental results and predictions from Drude and plasma models for the electrical permittivity is carried out. In the models the magnetic permeability of nickel is allowed to change to investigate its effects. Possible sources of errors, both in the experimental and theoretical sides, are taken into account. It is found that a Drude response with magnetic properties of nickel taken into account is unequivocally ruled out. The full analysis of the data indicates that a dielectric plasma response with magnetic properties of Ni included shows good agreement with the data. Neither a Drude nor a plasma dielectric response provide a satisfactory description if the magnetic properties of nickel are disregarded.

Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 μF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10−13 A at reverse biases and 10−7A at the forward bias of −2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond metal-oxide semiconductor field effect transistors are anticipated.

Conducting polymer microspherical cups for organic bioelectronics

Event Abstract Back to Event Conducting polymer microspherical cups for organic bioelectronics Milad Khorrami1, Martin Antensteiner1 and Mohammad Reza Abidian1 1 University of Houston, Biomedical Engineering, United States Current metallic-based implantable microscale bioelectronics have high impedance and low charge storage capacity, which result in both low signal-to-noise ratio and low charge injection electrode-tissue interfaces. Moreover, these electrodes without anti-inflammatory compounds are less likely to maintain their functionality due to unfavorable reactive tissue responses. Therefore, there is need to produce devices capable of delivering therapeutic compounds while maintaining their electrical performance. Poly(pyrrole) (PPy) has gained significant interest for biomedical applications owing to its excellent biocompatibility, electrical properties, and mechanical actuation. Poly(lactic-co-glycolic) acid (PLGA) is biodegradable and highly biocompatible, making it an ideal matrix for drug encapsulation. In this study, we have produced PPy microspherical cups from template PLGA microspheres. These conductive microstructures have large surface areas, granting low impedance values and high charge storage capacities for bioelectronics applications. PPy, poly(styrenesulfonate), benzyltriethylammonium chloride, PLGA, silicon wafer (Si) substrates and chloroform were used as purchased. Gold (Au) electrodes were fabricated on Si wafers (two circles with diameters 1.5mm and 5.0mm connected with a rectangle 1mm X 10mm). A thin layer of titanium (10nm) was deposited to support Au layer (100nm). Briefly, 4/2wt% PLGA/BTEAC was dissolved in chloroform and sprayed onto the Si using an applied electrical field of 100kVm-1 and 500μl/hr flow rate. PLGA particles were then coated with PPy/PSS using electrochemical deposition with current density 0.5mA/cm2 for 5 different time durations. The PLGA cores were then dissolved in chloroform to create PPy microspherical cups. Impedance spectroscopy (IS) and cyclic voltammetry (CV) were performed on all samples and a gold reference to investigate the impedance and charge storage capacity. The size and shape of PPy microstructures were characterized using Scanning Electron Microscopy. Fig. 1 shows the electropolymerized PPy on the surface of Au electrodes and around PLGA microspheres after 1, 2, 4, and 6 min. Fig. 2 demonstrates PPy cups after removal of PLGA cores. Fig. 3A shows the IS data for bare Au, PPy cups, and fully PPy-coated PLGA cores (8 min of deposition) from 1 to 10kHz. Electrodeposition of PPy on PLGA cores followed by removal of the PLGA significantly decreased the bare Au impedance (e.g. from 445 ± 63 Ω to 354 ± 39 Ω for 8 min coating at 1kHz, a difference of 20%). The additional surface area obtained by removal of the PLGA cores significantly increased the effective surface area of electrode, thus lowering the impedance. Fig. 3B shows the CV for bare gold, PPy cups, and fully PPy-coated PLGA microspheres. The PPy coating significantly increased the charge storage capacity from 2.5mC/cm2 (bare gold) to 47.5mC/cm2 (8 min), an increase of nearly 95%. We successfully demonstrated: (1) electrochemical deposition of PPy around the electrosprayed PLGA microspheres, (2) degradation of PLGA microspheres to fabricate PPy microspherical cups, and (3) improvement of electrical properties of Au electrodes by decreasing impedance and increasing charge storage capacity. This study demonstrates the potential of our conductive microstructures for neural interfacing and neural regeneration while retaining functionality for drug delivery. The authors would like to thank Fatemeh Fallahianbijan and support from National Institute of Health R01 NS087224. Keywords: electric, microstructure, polymer, biomedical application Conference: 10th World Biomaterials Congress, Montréal, Canada, 17 May - 22 May, 2016. Presentation Type: Poster Topic: Regenerative medicine: biomaterials for control of tissue induction Citation: Khorrami M, Antensteiner M and Abidian M (2016). Conducting polymer microspherical cups for organic bioelectronics. Front. Bioeng. Biotechnol. Conference Abstract: 10th World Biomaterials Congress. doi: 10.3389/conf.FBIOE.2016.01.02641 Copyright: The abstracts in this collection have not been subject to any Frontiers peer review or checks, and are not endorsed by Frontiers. They are made available through the Frontiers publishing platform as a service to conference organizers and presenters. The copyright in the individual abstracts is owned by the author of each abstract or his/her employer unless otherwise stated. Each abstract, as well as the collection of abstracts, are published under a Creative Commons CC-BY 4.0 (attribution) licence (https://creativecommons.org/licenses/by/4.0/) and may thus be reproduced, translated, adapted and be the subject of derivative works provided the authors and Frontiers are attributed. For Frontiers’ terms and conditions please see https://www.frontiersin.org/legal/terms-and-conditions. Received: 27 Mar 2016; Published Online: 30 Mar 2016. Login Required This action requires you to be registered with Frontiers and logged in. To register or login click here. Abstract Info Abstract The Authors in Frontiers Milad Khorrami Martin Antensteiner Mohammad Reza Abidian Google Milad Khorrami Martin Antensteiner Mohammad Reza Abidian Google Scholar Milad Khorrami Martin Antensteiner Mohammad Reza Abidian PubMed Milad Khorrami Martin Antensteiner Mohammad Reza Abidian Related Article in Frontiers Google Scholar PubMed Abstract Close Back to top Javascript is disabled. 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Intraperitoneal and retromuscular abdominal wall repair using ultra-light and titanium-containing polypropylene mesh (experimental research)

To study experimental possibility of light, ultra-light and titanium-containing endoprostheses implantation for postoperative hernias correction. Abdominal wall repair was simulated in 72 rabbits. In the first group polypropylene mesh with fibers diameter of 90 microns and surface density of 36 g/m2 was used. In the second group we applied polypropylene mesh with fibers diameter of 65 microns and thin layer of titanium. Their surface density was 16 g/m2. Intraperitoneal onlay mesh (IPOM) and sublay retromuscular (SRM) techniques were used in group 1 and 2 respectively. Animals were taken out from the experiment in 30 and 60 days. Adhesive process in implantation area was evaluated using the method of Egiev V.N. and Lyadov V.K. The most pronounced adhesive process was observed in IPOM series. Type of endoprosthesis and terms of postoperative period did not significant effect adhesive process. SRM method was associated with significantly less pronounced adhesions. Analysis of all data showed that severity of adhesive process was significantly higher in IPOM series compared with SRM technique. Our study showed that severity of abdominal adhesive process associated with repair using ultra-light mesh is completely determined by surgical technique and did not depend on type of endoprosthesis and terms of postoperative period. Described implants should be used for retromuscular implantation rather intraperitoneal position.

Amorphous silicon thin-film solar cells on glass fiber textiles

Abstract In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm2 are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%.