Thin Flims Research Articles

Direct Imaging of Lithiation-induced Phase Transition in Epitaxial T-Nb2O5 Thin Flims Anode under Electric Fields by In-situ STEM

Direct Imaging of Lithiation-induced Phase Transition in Epitaxial <i>T-</i>Nb2O5 Thin Flims Anode under Electric Fields by In-situ STEM

Study the Doping Effect of Lead(Pb) on the Optical Properties of Cadmium Sulfide (CdS) Thin Films.

The optical properties of pure and doped Cadmium Sulfide thin films have been stadied in the present work. Cadimum Sulfide can be doped by the Lead of (5%,10%,15%,20%) which prepared by chemical spray pyrolysis technique were deposited on (350ºC) glass substrates. The optical properties– Trasmittance (T), Absorbtance (A), Energy band gap (Eg), Absorption coefficient(α) and Extinction Coefficient (ko) - within wave length range (330-1100)nm. The cadmium sulfide (pure) thin flims were found to exhibit hight trnsmittance abute (82-86)%, the transmittance decreases with the increasing the doped ratio by the lead(Pb).The direct band gap energy of films decreases from (2.40eV) for the pure thin films to (2.35,2.31,2.25,2.19 eV) for the doped by lead at (5%,10%,15%,20%).

Electrotuneable Radical Polymers for Thin-Film Electronic Device Applications

Polyradicals – organic radical polymers in which each repeating unit contains a singly occupied molecular orbital (i.e. an unpaired electron spin) – are unique alternatives to their π-conjugated and semiconducting counterparts for several applications.[1] Unique of polyradicals are tunable charge states at their repeating units (see figure) which enable multi-stable charge transport regimes at the nanoscale. In this talk, we will present the use of thin films of polyradicals in transparent and flexible thin-film nanoelectronics. Although field-effect thin-film transistors (FETs) and flash memory devices ("memristors") based on radical polymers have been often proposed, memristor stability was frequently limited to a few writing cycles, in spite of the excellent quality of the active layer, and no FETs have been demonstrated, even though evidence of polyradical doping has been offered.[2]Here, the design criteria for flash memory devices are reviewed.It will be shown, using a combination of Kelvin-probe force microscopy (KPFM), electrical transport and optical measurements, that single-layer flash memory devices can be demonstrated from 6-oxoverdazyls, a class of radical polymers from which ultra-thin and ultra-smooth organic thin flims are advantageously processable.[3] As a case study, ultrathin devices in which the active layer is formed by a 15-nm homogeneous film of a poly-norbornene-6-oxoverdazyl (PN-6OV) polyradical synthesized by a dry vacuum polymer deposition technique are presented and compared with the corresponding devices of poly-6-oxoverdazyls (P6OV) synthesized by wet chemistry. [4] We will show that high performance is associated to the presence three tunable charge states in each monomer: positive, neutral, and negative, and also depends on the length of the pendant groups to which the radical repeating units are attached. We will demonstrate that careful engineering of the anode and cathode work functions, specifically aligning them with the negative and positive energy levels of the polyradical, is vital to maximize the on/off current ratio and ensure flash operation. The possibility to achieve electro-tunable poly-6-oxoverdazyl radical polymers by different techniques offer uniques opportunities for their use in a variety of different contexts, for example in transparent and/or flexible electronics, and where compatibility with different substrates is required.In the last part of our talk, we will present how a vertical device architecture, with drain-source contacts sandwiching the active layer of a strongly correlated 6-oxoverdazyl polyradical, leads to on/off ratios >103 in p-type PR-FETs. [4] Hole injection thus occurs by contact doping via tunable charge states at the polyradical-electrode interface. PRFETs are superior to existing organic FETs as they combine memristor and transistor functions in one mem-transistor device, offering unique potential for synaptic and spintronic applications.[1] Joo, Y.; Agarkar, V.; Sung, S. H.; Savoie, B. M.; Boudouris, B. W. A Nonconjugated Radical Polymer Glass with High Electrical Conductivity. Science 2018, 359, 1391-1395[2] Nguyen, T. P.; Easley, A. D.; Kang, N.; Khan, S.; Lim,S-M.; Rezenom, Y. H.; Wang, S.; Tran, D. K.; Fan, J.; Letteri, R. A.; He, X.; Su, L.; Yu, C-H.; Lutkenhaus, J. L.; Wooley K, L. Polypeptide organic radical batteries. Nature, 2021, 593, 61[3] Ezugwu, S.; Paquette, J. A.; Yadav, V.; Gilroy, J. B.; Fanchini, G. Design Criteria for Ultrathin Single-Layer Flash Memristors from an Organic Polyradical. Adv. Electron. Mater. 2016, 2, 1600253[4] Singh, D.; Magnan, F.; Gilroy, J. B.; Fanchini, G. Transparent and flexible field-effect transistors and mem-transistors with electroactive layers of solution-processed organic polyradicals, https://arxiv.org/abs/1910.10212 Figure 1

Design and Displacement Analysis of Three different Cantilever based MEMS Piezoresistive Pressure Sensor with Polymer (PDMS/PMMA) Thin Flim

This paper mainly focuses on to get high displacement from polymer based piezoresistive cantilever for MEMS/NEMS pressure sensor applications. The displacement has been analyzed and compared with three different cantilever using PDMS (Poly dimethyl siloxane) and PMMA (Poly methyl methacrylate) materials. The p-type silicon piezoresistors connected the form based on wheat stone bridge to get high sensible pressure sensor with respect to low response. An according to get high displacement, obviously the other performance of parameters such as stress, strain gets high range. So, this analyzed cantilever structure used to design a pressure sensor with high sensitivity. The design and simulation are done by using COMSOL Multiphysics.

Preface

Due to recent pandemic, the 2020 International Conference on New Energy and Sustainable Development (NESD2020) which was planned to be held in Changchun, China, was held virtually online during August 21-23, 2020. The decision to hold the virtual conference was made in compliance with many restrictions and regulations that were imposed by countries around the globe. Such restrictions were made to minimize the risk of people contracting or spreading the COVID-19 through physical contact. There were 60 individuals who attended this on-line conference, represented many countries including India, Pakistan, Australia, Brazil, South Africa, Ireland and China.With the limitation of conventional energy sources and the increasingly prominent environmental problems, new energy sources with environmental protection and renewable qualities are gaining more and more attention from various countries. The research of new energy science and the development of industry are effective supplementary means of the entire energy supply system, and also the ultimate energy choice to meet the needs of sustainable development of human society. Under such condition, the organizer, AEIC as a link in the field of scientific research, will gather experts and scholars and engineering technicians in the fields of new energy science and engineering, sustainable development and environmental engineering around the world under the same roof. Jointly promote research progress in this field.During the conference, the conference model was divided into three sessions, including oral presentations, keynote speeches, and online Q&A discussion. In the first part, some scholars, whose submissions were selected as the excellent papers, were given about 5-10 minutes to perform their oral presentations one by one. Then in the second part, keynote speakers were each allocated 30-45 minutes to hold their speeches. In the second part, we invited four professors as our keynote speakers. Assoc. Prof. Dr. Md. Akhtaruzzaman, from The National University of Malaysia, performed a speech on The Advancement of Inorganic Hole Transport Materials Towards Emerging Third Generation Thin Flim Solar cells. And then we had Prof. Michael Negnevitsky from University of Tasmania, Australia. He talked about High Renewable Energy Penetration and Power System Security: New Challenges and Opportunities. Prof. Jinghong Zhou, Changchun Institute of Technology, China, presented an insightful speech on Research progress and development trend of liquefied air energy storage technology. Lastly, we were glad to invite Assoc. Prof. Cangsu Xu, Zhejiang University, China as our finale keynote speakers. He shared a speech on Investigating the explosion of ethyl acetate in the presence of hydrogen. Their insightful speeches had triggered heated discussion in the third session of the conference. Every participant praised this conference for disseminating useful and insightful knowledge.List of Committee member, Conference Chairman, Conference Procedure Committees, Technical Program Committees are available in this pdf.

Preface

We are glad to introduce you that the 2020 International Conference on Energy Science and Engineering Thermophysics (ICESET 2020), hosted by AEIC Academic Exchange Information, Centre, was successfully held on Aug. 21-23, 2020. In light of worldwide travel restriction and the impact of COVID-19, ICESET 2020 was carried out in the form of virtual conference to avoid personnel gatherings. Because most participants were still highly enthusiastic about participating in this conference, we chose to carry out ICESET 2020 via online platform according to the original schedule instead of postponing it. ICESET 2020 is to bring together innovative academics and industrial experts in the field of energy science, engineering thermophysics and environmental engineering to a common forum. The goal is to promote scientific information interchange between researchers, developers, engineers, students, and practitioners working all around the world. An ideal platform for seeking global partners had been established.We are greatly honored to have invited Prof. Marco Di Ludovico from University of Naples Federico II, Italy to serve as our Conference Chair. The rest of the committee was composed of nearly forty privileged scholars from different renowned universities and institutes around the globe.During the conference, the conference model was divided into three sessions, including oral presentations, keynote speeches, and online Q&A discussion. In the first part, some scholars, whose submissions were selected as the excellent papers, were given about 5-10 minutes to perform their oral presentations one by one. Then in the second part, keynote speakers were each allocated 30-45 minutes to hold their speeches. We were pleased to invite four distinguished experts to present their insightful speeches. We had Prof. Jinghong Zhou, School of Electrical Engineering and Information Technology, Changchun Institute of Technology, to present his talk on Research progress and development trend of liquefied air energy storage technology. And then we had Prof. Michael Negnevitsky from University of Tasmania, Australia to presented his research on High Renewable Energy Penetration and Power System Security: New Challenges and Opportunities. The third keynote speakers, Assoc. Prof. Dr. Md. Akhtaruzzaman, The National University of Malaysia, made amazing speeches about The Advancement of Inorganic Hole Transport Materials Towards Emerging ThirdGeneration Thin Flim Solar cells. Lastly, we were glad to invite Assoc. Prof. Cangsu Xu from Zhejiang University, China as our conference keynote speakers to presented his insightful speeches on Investigating the explosion of ethyl acetate in the presence of hydrogen. In the last part of the conference, all participants were invited to join in a WeChat group to discuss and explore the academic issues after the presentations. The online discussion was lasted for about 30-60 minutes. The first two parts were conducted via online collaboration tool, Zoom, while the online discussion was carried out through instant communication tool, WeChat. The online platform enabled all participants to join this grand academic event from their own home.We are glad to share with you that we still received lots of submissions from the conference during this special period. Hence, we selected a bunch of high-quality papers and compiled them into the proceedings after rigorously reviewed them. These papers feature following topics but are not limited to: Energy Science, Engineering Thermophysics, Environmental Engineering and other related topics. All the papers have been through rigorous review and process to meet the requirements of International publication standard.Lastly, we would like to express our sincere gratitude to the Chairman, the distinguished keynote speakers, as well as all the participants. We also want to thank the publisher for publishing the proceedings. May the readers could enjoy the gain some valuable knowledge from the proceedings. We are expecting more and more experts and scholars from all over the world to join this international event next year.List of Committee member, Conference Chair, Keynote Speakers Program Committee Chair, Organizing Committees are available in this pdf.

Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims**Project supported by the National Key R & D Program of China (Grant No. 2017YFB0405702) and the National Natural Science Foundation of China (Grant No. 51671137).

Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by post-growth thermal annealing. Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films. Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature . The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals. The results may be useful for room temperature spintronic applications based on group IV semiconductors.

Formation and tribological properties of MoS2 self-lubricating porous anodic alumina thin flims

MoS2 self-lubricating films were prepared on long-range ordered porous anodic alumina (PAA) by an electrophoretic deposition (EPD) method. The PAA was prepared by two-step anodization of aluminum plates. Oxalic-acid-based electrolytes were used in the first step and phosphoric-acid-based electrolytes were used in the second step. This process offers a new approach to preparing PAA with wide adjustable boundary distances (43.5–21 nm) by increasing the voltage from 80 V to 100 V. The boundary distances were decreased from 78 nm to 42.2 nm by increasing the solution concentration, which increased the interpore distance. The coefficient of friction and hard-wearing of the MoS2 lubrication film on the PAA were studied by a ball-on-disk friction and wear tester. The results showed that the nanotubes stored MoS2 particles, which provided continuous lubrication.

GaN Schottky Contact on the Pattern Sapphire Substrate with Reducted Threading Dislocation

INTRODUCTION Recently, the interest in high quality GaN films has in-creased, GaN and its alloys show good performance at high-power, high-frequency transistors. Because of large mismatches of lattice constant and thermal expansion between GaN epitaxial film and sapphire substrate, however, the high-density dislocation ranging from 108-1010cm-2 does degrade the diode performance profoundly. Thus, growth of GaN with low threading dislocation(TD) has been more and more important. The single-step growth on pattern sapphire substrate(PSS) has been widely used for fabrication of reliable high quality GaN films. To improve the Schottky diode’s performance, high TD density must be considered. Using the PSS technique, we can significantly reduce the TD density. For an ideal Schottky diode the I-V characteristic[1] is given by I=I0exp(qV/nkT) ． [1-exp(-qV/kT)] and I0=SAT2exp(-Фb/kT), In this work, the PSS method developed by ourselves[2] is used to improve the GaN epitaxial film quality, which is then applied to the fabrication of Schottky diode on the GaN film. At last, different pattern dimensions are compared to find an optimum GaN Schottky diode. DEVICE FABRICATION The PSS pattern was defined by Electron-Beam lithography system. The arrayed nanostructure was designed to be arranged on the commercial c-plane(001) sapphire substrate. The dimensions of the arrayed nanostructure are related to the quality of GaN and can be defined as dimension: 600nm, means spacing: 600nm, diameter: 600nm of the fabricated PSS hole array. Next, the reactive ion etching system(RIE) was used to transfer the pattern from photoresist to SiO2 mask, and then the mixed liquid of H2SO4(96%) and H3PO4(85%) was used to etch substrate at 230°C for 60 minutes to make a pyramid shape pattern. Metal-organic-chemical-vapor-deposition(MOCVD) was used to grow GaN thin films. The epitaxial growth began with a 25nm-thick GaN nucleation layer and then an insulating GaN of 4μm thickness as a device buffer layer. The buffer layer has a resistivity greater than 200MΩcm2 to prevent leakage. A 30nm unintentionally doped AlGaN layer and a 2nm GaN cap layer were then grown to complete the modulation doped structure. Schottky devices of both on the planar region and on the pattern region were fabricated on the same substrate for comparison as shown in Fig.1. The process began with mesa iso-selectively etch AlGaN/GaN to mesa etch for electrical isolation. After the dry-etch isolation, Ge/Ti/Al/Ti/Au(10/20/100/55/100nm) were evaporated and annealed at 860°C for 20sec to form source and drain ohmic contacts. THIN FLIM QUALITY ANALYSIS To analyze the quality of GaN thin films, Raman spectrum and EPD(Etching Pit Density) are jointly performed on AlGaN/GaN samples on the planar and pattern regions. The Raman shift and full-width-half-maximum(FWHM) of Raman spectrum were measured to compare the strain and quality of GaN on the planar region and the PSS region. As shown in the Fig.2-1, Raman shifts of the PSS region in different dimension is lower than the planar region and closer to freestanding GaN(567cm-1)[3], which means that the PSS region has less stress accumulation. Fig.2-2 shows that the FWHM trend is the same as Raman shift, which means the quality is improved as the PSS dimension goes down. The narrowest Raman FWHM implies the lowest-stress of GaN and thus the optimum crystal quality, while the widest Raman FWHM of the conventional planar region implies the worst crystal quality of GaN. The EPD experiment used H3PO4 at 230°C for 5 minutes. The dislocation density on the planar region is 3.87x106(cm-2), higher than 1.37x106(cm-2) on the pattern region. This proves that the FWHM of the Raman spectrum corresponds to the reliability of the crystal quality, and that our PSS method does improve the crystal quality. CONTACT RESISTANCE ANALYSIS Schottky contact resistance was measured as shown in Fig.4. As the PSS dimension goes down, the contact resistivity goes down. That is, the proposed GaN thin film on the pattern region has a better quality than that on the planar region. Also, the Schottky contact on the proposed pattern region has a lower resistivity than that on the conventional planar region. Conclusion We have fabricated high quality GaN thin films by MOCVD on the Pattern Sapphire Substrate(PSS). Both Raman spectrum and EPD show that the PSS can magnificently improve the GaN film quality. The defect density has a tendency to correlate with the electrical properties of the component. To reduce defect density and improve electrical performance, different pattern dimensions are designed in the Schottky diodes. By using our PSS technology, the EPD can be reduced from 3.87x106(cm-2) to 1.37x106(cm-2) and the Raman spectrum FWHM can be reduced from 2.46(cm-1) to 2.33(cm-1). Also, the Schottky contact resistivity can be reduced from 0.0657(Ωcm2) to 0.00266(Ωcm2). Figure 1

Study of the optical proprieties of copper oxide nanoparticles prepared by PLD method

Nano CuO thin films on glass substrates were prepared at a constant temperature of (300°C), by pulsed laser deposition (PLD) using Nd:YAG laser at 1064 nm wavelength and five deposition energies (400, 500, 600, 700 and 800 mJ) with fixed pulses (300 pulse and 6 Hz) was used on the properties of CuO films. CuO nanoparticles were deposited on glass substrates to study optical properties and formed thin films of thickness (200 nm).CuO thin flims were characterized by X-ray diffraction (XRD) measurements have shown that the polycrystalline CuO prepared at laser energies , includes optical transmittance and absorption measurements and energy gap of these films.

Study of Dye Sensitized Solar Cell using Mirabilis Jalapa Flower Extract

Dye sensitized solar cells (DSSC) are a promising class of photovoltaic cells with the capability of generating green energy at low cost. No expensive equipment are required in their fabrication. In our work, we have constructed the solar cell with dye extracted from Mirabilis Jalapa (Four o’clock flower) as natural sensitizers.TiO2 thin flim was coated on FTO conducting glass plate. The prepared dye was coated on it. A blend of KI, Ethylene glycol and iodine was used as an electrolyte. The prepared cells were characterised with FT-IR spectrometer and UV-Vis spectrophotometer. I-V characteristic curves were traced and its efficiencies were calculated. The efficiency of Dye sensitized solar cells (DSSC) was calculated.

A Novel Voltage-Programmed Pixel Circuit with Poly-Si TFTs for AMOLED Displays

In this paper, we propose a novel voltage-programmed pixel circuit with polysilicon thin–flim transistors (poly-Si TFTs) for active matrix organic light-emitting diode (AMOLED) displays, which consists of one programming transistor, one driving transistor, four switching transistors and two storage capacitors, respectively. Specifically, the proposed pixel circuit is able to not only efficiently compensate for the threshold variations of TFTs, but also largely suppresses the electrical degradations of the devices caused by the long-term electrical stress. Moreover, the mobility variation of the driving transistor can be compensated as well. The simulation has been performed by HSPICE, and results indicate that the average values of nonuniformities are, respectively, 7.3% as the threshold-voltage varies by [Formula: see text][Formula: see text]V and 2.1%, as the mobility of the driving transistor varies by [Formula: see text]%, both of which are much lower than that of the conventional two-transistor and one-capacitor (2T1C) pixel. Furthermore, since the OLED is reverse-biased during the nonemission phases, the lifetime of OLED will be extended naturally. As a consequence, the proposed pixel circuit can substantially improve the display performance.

Optical filters for linearly polarized light using sculptured nematic thin flim of TiO2

A study of optical filters using sculptured nematic thin films is presented in this article. A central 90◦ twist-defect between two sculptured nematic thin films (SNTFs) sections transmit light of same polarization state and reflect other in the spectral Bragg regime. The SNTFs reflect light of both linearly polarized states in the Bragg regime if the amplitude of modulation of vapor incident angle is increased. A twist-defect in a tilt-modulated sculptured nematic thin films as a result produces bandpass or ultra-narrow bandpass filter depending upon the thickness of the SNTFs. However, both the bandpass or/and ultra-narrow bandpass filters can make polarization-insensitive Bragg mirrors by the appropriate modulation of the tilted 2D nanostructures of a given sculptured nematic thin films. Moreover, it is also observed that the sculptured nematic thin films are very tolerant of the structural defects if the amplitude of modulating vapor incident angle of the structural nano-materials is sufficiently large. Similarly, we observed the affect of incident angles on Bragg filters.

Synthesis and characterization of NiO-ZnO nanocomposite by a cost efficient self-combustion technique

Purpose: In this research work the nickel oxide incorporated zinc oxide nano compositewith various level of percentage such as (0.2, 0.4 and 0.6) were synthesized usingcombustion processes. Fuel used for the combustion process is hexamine in this work.Oxidizing agents taken were the nitrates of zinc and nickel. These precursor nitrates wereheated with hexamine fuel to undergo combustion process.Design/methodology/approach: After combustion the particles were collected and heattreated to maintain the purity of the samples. XRD results were in well accordance withthe JCPDS data and the average crystalline sizes were in the range of 10~20 nm. UV-VISabsorbance results confirm the band gap in the visible region. With increase in concentrationof NiO in the composite red shifted from 320 nm to 374 nm. FTIR supports the presenceof Zn-O and Ni-O bonds by the characteristic vibrational peaks at 432 cm-1 and 470 cm-1respectively. PL spectrum studies results in the redshift of ZnO peaks from 380 nm to 400 nmwith addition of Ni2+ ions inside the lattice. SEM and AFM studies reveals the morphologicaland topographical visualizations of the nanocomposite powders.Findings: In this research work, the authors had successfully synthesized Nickelsubstituted Zinc oxide by following simple combustion method followed by annealing. XRDanalysis clearly evidences the formation of ZnO in the hexagonal wurtzite structure with anaverage crystallite size of 15 nm to 18 nm. An increase in Nickel peaks in between the Zincoxide peaks were observed with increase in the nickel concentration in the composition.Practical implications: We conclude that combustion technique is suitable to fabricateNickel incorporated Zinc oxide particles with high purity. This powder can be used intransparent conducting thin flims for OLED applications.

Effect of Thermocapillary on the Absolute and Convective Stabilities of a Thin Flim Flowing down a Fibre

Effect of Thermocapillary on the Absolute and Convective Stabilities of a Thin Flim Flowing down a Fibre

Modulation of physical of properties of sprayed ZnO thin flims by substrate temperature for optical applications

Modulation of physical of properties of sprayed ZnO thin flims by substrate temperature for optical applications

Modeling the Material Allocation System for TFT-LCD Module Factories Based on Make-to-Stock Production

The thin flim transistor liquid crystal display (TFT-LCD) module factories are in charge of the last process of the TFT-LCD supply chain, i.e., assembling LCD panels (produced from the former process in the supply chain) as well as electronic components into TFT-LCD panels or the finished products using TFT-LCD panels. Since the variation of machine processes and production techniques at the former process of the supply chain results in a variety of qualities of LCD panels, the finished products assembled with those LCD panels of different qualities are also of different qualities, according to which they are classified into different grades. This paper models the material allocation system for a TFT-LCD module factory based on the make-to-stock (MTS) production, in which one of the main designs is to allow the flexibility that the finished products of higher grades are able to be downgraded to respond to the drastic variation of customer requirements for each grade of finished products. The system is modelled in detail by an integer programming approach that takes into account not only downgraded products but also the customer requirements for the quality qualification rate and the lower bound of non-dot-defect rate of products, to maximize the total profit of the product portfolio. The model is evaluated by conducting an experimental study for a numerical example, which turns out that the proposed system looks promising as it determines a feasible product portfolio that decreases both the inventory of LCD panels and the volume of unqualified products while maintaining a high profit.

Application of Fuzzy Logic Reasoning Model for Determinig Adhesive Strength of Thin Flim Coatings

This paper shows a elaborates new methodology for calculating Adhesive Strength of thin film coating using approximate fuzzy reasoning. This approach mainly focuses on nano and micro thin filmsfor evaluating adhesion strength. The influence of various coating parameters (Critical force, loading rate, Displacement rate, Coefficient of friction, Tip radius and Tip wear)on quality of adhesion strength is considered. is used Modeling and Simulationis done with the help of fuzzy logic toolbox a nd results are shown.

Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and Ion/Ioff of GO-TFT were found to be 0.105cm2V−1s−1, −8.7V, 4.03V/decade and 10, respectively.

Influence of Annealing Temperature on the Structure and Electrochromic Properties of NiO&lt;sub&gt;x&lt;/sub&gt; Thin Films

The NiOx thin flims deposited on SnO2/glass substrates by RF sputtering were investigated through XRD、SEM、spectrophotometer and Cyclic voltammetry. The relationship between electrochromic properties and micro-structure of NiOx was also studied. Results show that NiOx films prepared by sputtering are preferred to grow along (200) direction; the crystallize size of NiOx films increases and the transmittance of colored and bleached states of NiOx films also increases with annealing temperature rising, but the transmittance different between bleached and coloured states reduces. The declined electrochromic propertiey of NiOx with the increase of annealing temperature is also found.