Structure Of Thin Films Research Articles

Электрофизические и температурные характеристики тонких слоёв квантовых точек Ag2S

This paper presents a study of the electrical properties of colloidal silver sulfide quantum dots thin films (Ag2S/SiO2 QDs) and silver sulfide quantum dots decorated with Au plasmon nanoparticles (Ag2S/SiO2/Au QDs). A study of the conductivity temperature dependences was carried out in the temperature range from 300 to 360 K. The activation energy values were obtained from linear approximations of the current-voltage characteristics in Arrhenius coordinates. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to an increase in the band gap from 0.29 to 0.89 eV. In this work, the ideality factor is calculated and the main conductivity mechanisms of the presented thin-film structures are determined. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to a change in the conductivity type. According to the Mott-Gurney model, the charge carriers mobility is calculated.

Development of Bio-Photoelectrochemical Hybrids for Solar Energy Conversion

Recent advancements in solar energy conversion have identified bio-photoelectrochemical hybrids as one of the most promising sustainable techniques. This study integrates BiVO4 and TiO2 semiconductors with photoautotrophic microorganisms (e.g., Algae) to enhance solar energy conversion. Thin films of these materials were prepared and characterized, revealing a relatively smooth surface for BiVO4 while structures for TiO2 thin films deposited as nanorods. Optical properties showed band gaps of ≤ 3.1 and 2.4 eV for TiO2 and BiVO4, respectively. The point of zero charge of materials was investigated, indicating that naturally occurring biofilm formation might not be favorable for as-prepared materials. To overcome this challenge, we aimed to use polyelectrolytes to enhance attachment of cells on the surface of semiconductor and in this regards we determined the biocompatibility of using this approach. Photoelectrochemical (PEC) measurements were conducted to evaluate solar energy conversion efficiency. This study offers insights into optimizing biosystem attachment, biofilm stability, and PEC performance of coupled semiconductors with photoautotrophic microorganisms as one photoelectrode in PEC cell, advancing sustainable solar energy conversion technologies.

Atomically Resolved Phase Coexistence in VO2 Thin Films.

Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

Effect of Picosecond Laser Irradiation on the Properties of Nanostructured Zinc Oxide Thin Films

In this article, a picosecond laser source was employed to irradiate the nanostructured ZnO thin film prepared by the sol-gel method. The impact of laser irradiation on the characteristics of a nanostructured ZnO thin film was investigated. Analysis using X-ray diffraction, scanning electron microscopy, and Fourier transform infrared spectroscopy confirmed a significant influence on the structure of the ZnO thin film. As the duration of laser irradiation (the number of laser pulses) increased, there was a remarkable decrease in both the electronic and photoluminescence intensities of the nanostructured film. Tauc's plot indicates a noticeable change in the optical band gaps of the thin film with the increase in irradiation time. The morphological image suggests that the laser irradiation energy induces both degradation and modification of the film surface, consequently causing changes in the structural, absorption, and photoluminescence properties of nanostructured ZnO. The observed effects are attributed to alterations in the crystal structure and size of the nanostructured ZnO film, as confirmed by XRD. The reduction in photoluminescence intensity observed over the laser irradiation times may be a result of potential degradation in the crystalline structure of the nanostructured ZnO film.

Effect of Boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

Abstract Investigations have been conducted into the structure, morphology, thickness, and optical properties of ZnO thin film upon doping it with Boron from boric acid (H3BO3) at a constant concentration and annealing it at various temperatures (200, 300, and 400 °C). The thin films were formed on glass substrates using the spray pyrolysis process at 250°C, and they were then annealed for two hours in air at various temperatures. It was discovered that the annealing temperature and boron doping had a substantial impact on all properties of the ZnO nanostructure. The polycrystalline hexagonal wurtzite structure is present in both ZnO and BZO thin films. With high optical transmission (≥70%), crystallite diameters of 25.8 to 28.5 nm for ZnO and 15.96 to 24.80 nm for BZO, respectively, and significant absorbance up to 400 nm at the maximum annealing temperature (400 °C) for both films. Moreover, the as-deposited and annealed BZO films had optical band gaps of 3.04 eV and 2.9 eV, respectively, which are less than the ZnO film's 3.23 eV band gap; in general, as the annealing temperature increased it decreased.

Multiple-angle incidence resolution spectrometry (MAIRS): applications in nanoarchitectonics and applied physics

Abstract The cutting-edge thin film studies using the multiple-angle incidence resolution spectrometry (MAIRS) are introduced from the principle to forefront applications in a wide variety of research fields covering semiconductor material with respect to nanoarchitectonics. MAIRS basically reveals quantitatively optical anisotropy in thin films, which is mostly used for quantitative molecular orientation analysis of each chemical group for chemistry purposes. This works powerfully especially when the material has poor crystallinity that cannot be analyzed by X-ray diffraction analysis. As a matter of fact, MAIRS works as a role that compensates for the diffraction techniques, and the combination of MAIRS and the diffraction techniques has already established as the most powerful technique not to miss the molecular aggregation structure in thin films. In this review, in addition, another application for physics purposes is also introduced where phonon in thin films is discriminated from normal infrared absorption bands by using the MAIRS technique.

Influence of Silsesquioxane-Containing Ultra-Thin Polymer Films on Metal Oxide Gas Sensor Performance for the Tunable Detection of Biomarkers

Certain biomarkers in exhaled breath are indicators of diseases in the human body. The non-invasive detection of such biomarkers in human breath increases the demand for simple and cost-effective gas sensors to replace state-of-the-art gas chromatography (GC) machines. The use of metal oxide (MOX) gas sensors based on thin-film structures solves the current limitations of breath detectors. However, the response at high humidity levels, i.e., in the case of exhaled human breath, significantly decreases the sensitivity of MOX sensors, making it difficult to detect small traces of biomarkers. We have introduced, in previous work, the concept of a hybrid gas sensor, in which thin-film-based MOX gas sensors are combined with an ultra-thin (20–30 nm) polymer top layer deposited by solvent-free initiated chemical vapor deposition (iCVD). The hydrophobic top layer enables sensor measurement in high-humidity conditions as well as the precise tuning of selectivity and sensitivity. In this paper, we present a way to increase the hydrogen (H2) sensitivity of hybrid sensors through chemical modification of the polymer top layer. A poly(1,3,5,7-tetramethyl-tetravinylcyclotetrasiloxane) (PV4D4) thin film, already applied in one of our previous studies, is transformed into a silsesquioxane-containing top layer by a simple heating step. The transformation results in a significant increase in the gas response for H2 ~709% at an operating temperature of 350 °C, which we investigate based on the underlying sensing mechanism. These results reveal new pathways in the biomedical application field for the analysis of exhaled breath, where H2 indicates gastrointestinal diseases.

Aluminum-doped zinc oxide thickness controllable wavelengths in visible light and high responsivity devices using interrupted flow atomic layer deposition

In this study, we develop a highly sensitive visible light photodetector that utilizes a thin-film structure composed of low-cost aluminum-doped zinc oxide (AZO) and n-type silicon. The AZO thickness can be adequately controlled to fit the different wavelengths of interest for photodetectors in the visible light range using interrupted flow atomic layer deposition (ALD). This in situ aluminum doping method ensures a uniform aluminum distribution within the AZO thin films and effectively increases the internal film reflections and photoresponsivity. The Schottky interface with n-type silicon is created by degenerated AZO due to the lower Fermi level, and visible light can effectively penetrate the underlying depletion zone. Optical simulation of the high conductivity of AZO indicated that the optimal thickness was 54.6, 65.8, and 91.7 nm for devices illuminated with 450 nm blue, 525 nm green and 700 nm red light, respectively. Hall effect measurements confirmed that the AZO film can achieve a low resistivity of 5 × 10–4 Ω-cm and high carrier concentration of 3 × 1020 cm−3 at a suitable precursor ratio. Additionally, AZO films offer multifunctionality by providing optical antireflective properties and forming Schottky junctions with n-type silicon to enable photoelectric conversion. This multifunctional role of AZO was experimentally validated through electrical, optical, and optical-to-electrical experiments, which showed that the optimized device can reach an optical responsivity of approximately 10.7 AW−1 at specific visible light wavelengths. The significant photoelectrical conversion efficiency and simple thin-film structure design facilitate future applications in light intensity measurement, such as in colorimetry or fluorometry.

Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after the crystallization process

The effect of strain on the ferroelectricity of HfO2 thin films after crystallization was investigated by applying uniaxial mechanical strains to Au/HfO2/TiN metal–ferroelectric–metal (MFM) capacitors. The remnant polarization (2P r) of MFM capacitors increased when tensile strain was applied during polarization switching. This phenomenon should not be attributed to phase transformation from the non-ferroelectric to the ferroelectric phase, taking account of the fast relaxation of 2P r after removal of the mechanical strain and the fact that the crystal structure of HfO2 thin films evaluated by grazing incidence X-ray diffraction measurement was not changed by the tensile strain.

High-performance solar-blind photodetectors based on Ta-doped ZnSnO3 single crystal thin films

High-quality Ta-doped ZnSnO3 single crystal thin films were grown on LiTaO3 substrates by pulsed laser deposition (PLD) method, and the effects of Ta doping on the lattice structure, surface morphology, electronic structure and photodetector performance of ZnSnO3 thin films are studied in detail. When the Ta doping content is 1%, the [0001]-oriented ZnSnO3 thin film present the highest quality, which the optical band gap (3.75eV), the smoothest surface roughness (0.83nm), and the biggest carrier concentration (4.03 × 1019cm-3). For the solar-blind photodetectors (PDs), based on these excellent characteristics, the 1% Ta-doped ZnSnO3 PD exhibits large light-to-dark current ratio (>103), responsivity (21.37A/W), detectivity ((3.63±0.71) ×1011 Jones) and external quantum efficiency (~1.04× 104%) under 254nm UV light at an applied bias of 5V. This study suggests that Ta doping can effectively improve the optoelectronic performance of ZnSnO3 PDs, laying the foundation for their application.

Flash soldering of boron nitride nanosheets for all-ceramic films

The assembly of boron nitride nanosheets (BNNSs) into strong, flexible thin films capable of withstanding extreme conditions, such as high/low working temperatures and corrosive environments, holds immense promise for numerous applications. However, BNNSs are difficult to assemble and sinter to achieve the dense thin film structure observed in graphene thin films. We report the rapid fabrication of dense BNNS all-ceramic films (BACFs) in 30 s by combining the fabrication strategies for 2D and ceramic materials. In this process, densely arranged and highly oriented BNNSs are flash soldered into a monolith achieved by precisely controlled ultrafast sintering. This fusion of BNNS leads to an ultrahigh in-plane thermal conductivity of 134.5 W·m−1·K−1, which was among the highest values for BNNS films (mostly ≤ 70 W·m−1·K−1). The as-prepared BACF exhibits the combined advantages of sintered ceramics (durability, stability, acid-alkali resistance) and 2D material films such as flexibility and shock resistance, which is important for practical uses but rarely found in existing ceramics. It also has excellent cooling performance, dielectric properties, and good thermal stability, which is promising for demanding thermal management applications in emerging technologies.

Giant Seebeck coefficient in SnTe thin films grown by thermal evaporation using layered structure engineering

In this work, we have reported a giant Seebeck coefficient (8033 µV/K) in SnTe thin films by controlling the layered structure using post growth annealing technique. The samples used in the current study were synthesized using a vacuum tube furnace having an evaporation temperature 700 °C, base pressure 180 m Torr and source to substrate distance 7 cm. Sn and Te metal powders with an equal weight ratio were evaporated on the glass substrate to form SnTe composite. Post-growth annealing in vacuum environment was performed for different time’s duration of 1–4 h with a step of one hour. XRD analysis reveals six diffraction peaks for all samples, which correspond to different crystal planes of SnTe structure. Raman spectra exhibit the presence of specific vibrational modes associated with SnTe. Using the giant value of Seebeck coefficient and moderate electrical conductivity, a strong power factor value of 8.1 × 10−3 W m−1 K−2 was observed for optimized sample (annealed for 3 h). The strongest values of Seebeck coefficient and power factor are supposed to be the layered structure of SnTe thin films which was verified by the SEM images.

Topological semimetal interface resistivity scaling for vertical interconnect applications

In this work, we explore the electron scattering characteristics at interfaces between normal metals and topological semimetals in bulk as well as in thin film structures. We consider Cu/Ta and CoSi/Ta as representative metal/metal and topological semimetal/metal interface structures, respectively. For bulk interface structures, we find that metal/topological semimetal interfaces have roughly 20× higher interfacial resistivity than normal metal/metal interfaces primarily due to the low electronic density of states, the Fermi level in bulk topological semimetals. For thin films, we find that normal metal/metal interfacial resistivity shows a weak dependence on film thickness and is generally close to the corresponding bulk value. Interfaces between surface-conduction dominated topological semimetals, such as CoSi and normal metals in thin films, however, show decreasing interfacial resistivity with decreasing film thickness. This apparent reduction in interface resistivity originates from the surface-dominated transport, where the total transmission across the interface varies little with reduced film thickness, yielding an effective increase in interface conductivity at smaller dimensions. These results suggest that topological semimetals may be attractive candidates for next-generation interconnect materials with critically small dimensions where interfaces with other metals are ubiquitous.

Structure and optical properties of Si thin film improved by metal Cd nanolayers

AbstractEnhancing the characteristics of amorphous semiconductor thin films is imperative for a multitude of applications. The present study examines the impact of Cd nanolayers deposited on a thin film of amorphous Si. The X-ray test showed that the thin silicon film had less of an amorphous structure after a nanolayer of cadmium was added. There has also been the appearance of new phases, and as the thickness of the Cd nanolayer increases, so does the intensity of these phases. Using a field emission scanning electron microscope, it was seen that nanoparticles were developed and subsequently transformed into clusters as the thickness of the Cd nanolayer grew. The absorbance was maximized at 750 nm and near-infrared region after depositing Cd nanolayers, while transmittance was reduced, especially at 100 nm thicknesses. The energy gap was reduced, with a decrease from 5.1 to 1.8 electron volts (eV). However, an increase in the band tails was also noted, rising from 0.7 to 4.9 eV. An increase in the values of the refractive index (n) and extinction coefficient (k) was observed following the deposition of Cd nanolayers of different thicknesses.

Semiconductor Membrane Exfoliation: Technology and Application

AbstractFlexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications. It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. Instead, they are typically fabricated on conventional rigid thick semiconductor substrates. Consequently, the exfoliation and transfer of epitaxial semiconductor thin film structures onto substrates constitute pivotal steps in the production of flexible optoelectronic devices. The integration of hard inorganic semiconductor materials with flexible substrates offers a solution to the limitations of rigidity and brittleness associated with conventional optoelectronic devices and can be used to address challenges from design to manufacturing. This review provides a comprehensive overview of the working principles and recent advances of various techniques aimed at achieving the membrane exfoliation and transfer of semiconductor structures on conventional rigid substrates. It also reviews the possible applications of the transferred membrane in a variety of optoelectronic devices. Finally, it offers insights into the potential of high‐end semiconductor manufacturing and flexible semiconductor devices to play a critical role in advancing next‐generation optoelectronics technologies.

Ferromagnetism behavior of Ni-doped Fe3O4 thin films synthesized by the SILAR technique

In this article, Ni-doped Fe3O4 thin films were synthesized by using the SILAR technique. The films were characterized through X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), Raman, Photoluminescence and UV–Vis analysis. The XRD spectrum confirms the spinal structure of undoped and Ni-doped Fe3O4 thin films. The FESEM images show that Ni-doping has changed the morphology of thin films from a granular to a Spiky structure. The EDAX and XPS spectra show Fe, Ni and O elements are present in 1%Ni-doped Fe3O4 thin film. The vibrating sample magnetometer (VSM) studies showed ferromagnetism in undoped and Ni-doped Fe3O4 thin films. The ferromagnetism behavior of Ni-doped Fe3O4 thin films increases with the increase in Ni ion concentration.

Локализованные акустические волны в одномерных периодически модулированных структурах

A number of one-dimensional phononic crystals, which are periodic thin-film structures of various geometries, consisting of sets of columns and metal inclusions located on a piezoelectric half-space, have been proposed and studied. The features of propagation in such structures of acoustic waves localized near the free surface and inhomogeneous inclusions have been studied. An unusual behavior of the dispersion curves for the studied localized modes was discovered. Particular attention is drawn to the so-called forbidden zones, i.e. frequency ranges in which there are no propagating localized modes. The influence of mechanical and electrical boundary conditions on the spectrum of the waves under study is discussed in detail.

Electronic structures of skyrmionic polycrystalline MnSi thin film studied by resonance photoemission and x-ray near edge spectroscopy

Magnetic nanometric skyrmions are small complex vortex-like topological defects, mainly found in non-centrosymmetric crystals such as MnSi. They have potential applications for future spintronic devices. In this article, the structural, electronic, and magnetic states of the Mn atoms in a polycrystalline MnSi thin film facing a c-sapphire substrate were studied using x-ray diffraction, x-ray photo-emission spectroscopy, resonance photoemission spectroscopy (RPES), and extended x-ray absorption fine structure (EXAFS). The valence band spectra indicate the metallic nature of the film. The RPES study reveals the presence of major itinerant Mn 3d states near EF and also the mixed Mn 3d and Si 3s–3p states from 5.3 to 11.3 eV. The EXAFS spectrum does not show the existence of oxygen vacancies in the system, and the obtained magnetic moment in the non-stoichiometric MnSi thin film is a combination of the partially itinerant and partially localized Mn 3d states.

Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

In this study, all-inorganic two-dimensional (2D) perovskite Cs2Pb(SCN)2Br2 was employed in a thin-film vertical structure prototype memristor. The device consisted of a Cs2Pb(SCN)2Br2 film prepared through solution approach, sandwiched between an Ag electrode and a TiO2/FTO substrate bottom electrode. Two types of resistive switching (RS) behaviors were observed within a single device at different temperatures. At room temperature, the dominant control mechanism was the interface Schottky barrier, whereas at higher temperatures, the primary driving force shifted to the conductive channel. The device has an on/off ratio exceeding 103 under the interface control mechanism. The migration of mobile bromine vacancies within the Cs2Pb(SCN)2Br2 film, whose concentration was enhanced by the infiltration and reaction of the Ag active electrode within the Cs2Pb(SCN)2Br2 film, is proposed to be the root cause for both types of RS characteristics. These findings offer insights into the potential application of 2D Cs2Pb(SCN)2Br2 perovskite in RS memory devices.

Prediction of wrinkle patterns in tensioned thin-film structures containing rigid elements

Prediction of wrinkle patterns in tensioned thin-film structures containing rigid elements