In this work, we demonstrate that TiO2−x based Resistive Random Access Memory devices can function without an initial electroforming process and a wide range of switching ratios could be achieved by controlling the oxygen content, the compliance current, the sweep bias amplitude, and the width of the voltage pulse applied on the memory cell. The influence of deposition ambient and more particularly of oxygen flux during thin film sputtering at room temperature to the resistive properties of titanium oxide will be discussed in detail. By controlling the density of oxygen vacancies into the dielectric matrix, we can also improve the repeatability and the operation of the device, in terms of distribution of the SET/RESET voltages. We propose that ultra high density of vacancies deteriorate the switching phenomenon, whereas high vacancy density results in better switching behavior. Moreover, we conclude that the oxygen vacancies density and distribution have a direct impact on the conducting filament diameter, in terms of sensitivity of the conducting paths (high OFF/ON ratio). By increasing the oxygen content, we reduce the size of vacancy based filaments, resulting in a more stable operation of our device. In addition, manipulation of population of oxygen ions into the Ti top electrode enables the creation of multilevel switching states. Switching speed, endurance, and retention performance reveals the excellent functionality of our device as a non-volatile memory element and conduction mechanism analysis demonstrates the manifestation of Poole-Frenkel emission in conjunction with trap-assisted tunneling, which is also deployed in order to interpret the gradual increase of current during SET process.