Abstract
We study the electrical characteristics of TiO2−x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.
Highlights
Operational reliability, in terms of uniformity in the switching current-voltage (I–V) response and good endurance characteristics, is one of the key areas of current research in Resistive switching (RS)-based memory devices.10,11 Nowadays, it is widely accepted that fine tuning of growth conditions and an electroforming protocol largely determine the operational response of the devices.12 often happens that seemingly similar devices present radically different RS characteristics
We study the electrical characteristics of TiO2Àx-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition
We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior
Summary
Operational reliability, in terms of uniformity in the switching current-voltage (I–V) response and good endurance characteristics, is one of the key areas of current research in RS-based memory devices.10,11 Nowadays, it is widely accepted that fine tuning of growth conditions and an electroforming protocol largely determine the operational response of the devices.12 often happens that seemingly similar devices present radically different RS characteristics. We study the electrical characteristics of TiO2Àx-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior.
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