Morphology Of Thin Films Research Articles

Effects of Dy on structural, morphology, optical, and resistive switching properties of HfO2 thin films

This paper studies the effect of Dy on the structure, morphology, and optical properties of HfO2 thin films deposited on fused silica substrates and the optical transparency and resistive switching (RS) behavior of the thin films as an active insulator layer in Ag/active insulator layer/ITO/glass memories. Thin films were deposited by spin-coating using a precursor solution obtained by the Pechini-type sol-gel method. The structural analysis revealed that the insertion of Dy ions into the HfO2 lattice caused the phase transformation from the monoclinic to the cubic phase. Morphological analysis revealed that the thin films had thicknesses between 98 and 101 nm, and their surfaces were composed of 3D islands formed by aggregates of spherical particles ranging from 8 to 5 nm. The active insulator layers had thicknesses ranging from 235 to 218 nm, with no cavities or cracks between them. The optical transparency of the active insulator layer/ITO/glass memory structures was between 70 and 87 %. Optical transmittance, optical bandgap, and optical constants were modified incorporating Dy ions into HfO2 thin films compared to the undoped HfO2 thin films. Incorporating Dy ions into HfO2 increased oxygen vacancies in the active insulator layers. The memory with 10 w% of Dy had the highest resistance off/on ratio of 9.04 compared with undoped HfO2 memory. Also, the conduction mechanism in the high resistive state (HRS) of the memory with 10 w% of Dy was related to ohmic conduction and space charge limited conduction (SCLC).

Sensitivity Enhancement of CO2 Sensors at Room Temperature Based on the CZO Nanorod Architecture.

Cobalt-doped ZnO (CZO) thin films were deposited on glass substrates at room temperature by radio frequency (RF) magnetron sputtering of a single target prepared with ZnO and Co3O4 powders. Changes in the crystallinity, morphology, optical properties, and chemical composition of the CZO thin films were investigated at various sputtering powers of 45, 60, and 75 W. All samples presented a hexagonal wurtzite-type structure with a preferential c-axis at the (002) plane, along with a distinct change in the strain values through X-ray diffraction patterns. Scanning electron and atomic force microscopy revealed uniform and dense deposition of nanorod CZO samples with a high surface roughness (RMS). The Hall mobility and carrier concentration increased with the introduction of Co+ ions into the ZnO matrix, as seen from the Hall effect study. The gradual increase of the power applied on the target source significantly affected the morphology of the CZO thin film, which is reflected in the CO2-sensing performance. The best gas response to CO2 was recorded for CZO-60 W with a response of 1.45 for 500 ppm CO2, and the response/recovery times were 72 and 35 s, respectively. The distinguishing feature of the CZO sensor is its ability to effectively and rapidly detect the CO2 target gas at room temperature (∼27 °C, RT).

Synthesis and characterization of efficient Sr-doped ZnO nanostructures for optoelectronic, and photocatalytic applications

With increasing technological advancements, optoelectronics emergence is inevitable. Various metal oxides are explored for optoelectronics properties and Zinc oxide-based nanostructures have various advantages that can be explored in optoelectronic devices. Nanomaterials that are undoped and Strontium doped were synthesized via a simple wet chemistry route. The study set out to quantify the impact of Strontium doping in Zinc Oxide on optical and photocatalytic properties. The doping of strontium concentration within ZnO varied from 0 % to 3 % by weight of the total molar ratio. The characterization of SZO nanomaterials was done using measurements of X-ray diffraction, Raman Spectroscopy, SEM, Hall effect measurements, UV/Vis, and PL regarding their structural properties, morphological properties, optical properties, and electrical characteristics. X-ray diffraction analysis showed that the Sr-doped ZnO had the hexagonal wurtzite structure of zinc oxide. SEM showed that the morphology of Sr-doped ZnO thin films changed by increasing Sr concentration. Meanwhile, the film’s surface was smooth and crack-free. In UV–Vis experiments, the concentration of Sr doping reduced the optical band gap ranges from 3.27 eV to 2.98 eV. All the samples exhibited n-type conductivity in the Hall Effect. Photocatalytic degradation Methylene Blue was studied and SZO (3 at. %) was best for degradation with efficiency over 80 %.

Chemical bath deposition approach to produce three different morphologies of PbO thin films from different cation concentrations

Chemical bath deposition approach to produce three different morphologies of PbO thin films from different cation concentrations

Impact of transparent conducting substrates on structural and optical of Titanium(IV) phthalocyanine dichloride (TiPcCl2) thin films

This study investigates the impact of transparent conducting substrates, specifically indium-doped tin oxide (ITO) and fluorine-doped tin oxide (FTO), on the structural and optical characteristics of thermally evaporated Titanium phthalocyanine chloride (TiPcCl2) thin films. The crystalline structure of TiPcCl2/quartz thin films was verified by X-ray powder diffraction (XRD) patterns while amorphous phases were detected in TiPcCl2/ITO and TiPcCl2/FTO thin films. Field emission scanning electron microscopy (FESEM) images provided evidence that the morphology of TiPcCl2 thin films may be affected by a lattice mismatch between TiPcCl2 and substrates. Fourier-transform infrared spectroscopy (FT-IR) also showed that the substrates did not change the molecular structure of TiPcCl2. UV–Vis-NIR spectroscopy demonstrated that the substrates had a significant influence on the optical gap, optical constants, dielectric constant dielectric loss functions and optical conductivity of TiPcCl2 thin films. Lastly, the nonlinear susceptibility χ(3), the nonlinear refractive index n2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\varvec{n}}}_{2}$$\\end{document} and the nonlinear absorption coefficient β(c) for TiPcCl2/ITO, TiPcCl2/FTO, and TiPcCl2/quartz were obtained using a semi-empirical approach. The changes seen in optical properties could be due to changes in the crystal structure and morphology, which are closely connected to the properties of the substrate material. Overall, the results for TiPcCl2 thin films are promising, and they are appropriate for novel optoelectronic device applications.

Elucidating Morphology‐Mobility Relationships of Organic Thin Films Through Transfer Learning‐Assisted Multiscale Simulation

AbstractUnderstanding the relationship between morphology and charge transport capability in organic thin films is vital for advancements in organic electronics. However, accurately predicting charge mobility in these films is challenging due to the extensive evaluations of transfer integral required. To address this challenge, transfer learning techniques are employed to develop machine learning models capable of efficiently and accurately calculating transfer integrals in organic thin films with grain boundaries and polymorphs. Through machine learning‐assisted multiscale simulations of charge transport, the impact of solution shearing conditions is investigated on the morphology and mobility of organic thin films. The findings reveal that shearing‐induced molecular orientation and pre‐aggregation have a significant influence on film morphology, and a moderate shearing speed combined with a suitable solvent promotes the formation of extended transport networks, leading to higher mobility. The utilization of transfer learning‐accelerated simulation techniques opens up new possibilities for exploring the relationship between solution‐processing conditions, morphology, and charge transport properties of organic thin films. This research provides valuable insights that can be applied to optimize solution‐processing techniques in organic electronics.

Importance of Short-Range Order in Governing Thin Film Morphology and Electronic Properties of Polymeric Organic Semiconductors

Importance of Short-Range Order in Governing Thin Film Morphology and Electronic Properties of Polymeric Organic Semiconductors

Optical transmission and photoconductivity of chemical bath-deposited CdS thin films for optoelectronic applications

This paper presents a comprehensive study of the optical transmission, photoconductivity, and morphology of CdS thin films deposited via the chemical bath deposition (CBD) method. The films deposited for 60 min exhibit an optical energy band gap value of 2.42 eV and the highest optical transmission of 75 % in the wavelength range of 500–900 nm. For these films, the transmission electron microscopy imaging shows a distribution of particle sizes around 10 nm. The wavelength dependence of the photoconductivity, extracted from photo resistivity data, shows that the maximum photoconductivity occurs at 492 nm wavelength. This corresponds to an electrical energy band gap of 2.52 eV, which is greater than the optically measured energy gap of 2.42 eV. Based on these results, the electron-hole pair binding energy for CdS films is estimated as 100 meV. According to the electrical resistivity vs. temperature measurements, the activation energy is 1.26 eV which agrees with the electrical energy band gap of 2.52 eV. CdS films annealed under nitrogen gas at 200 °C for one hour exhibited an energy gap of 2.32 eV. These films displayed a conductivity of 60 × 10−4 Scm−1, a carrier concentration of 6.38 × 1014 cm−3, and a mobility of 7.46 cm2 V−1 s−1. These impressive characteristics suggest the suitability of CBD-grown CdS films annealed at 200 °C in nitrogen gas, to be used as the window material in CdS/CdTe thin film solar cells and other optoelectronic applications.

Tuning the crystalline orientation of quasi 1D anisotropic Sb2Se3 as a function of growth temperature for thin film photovoltaic applications

Antimony selenide (Sb2Se3) shows excellent photon absorption in the visible region and hence gaining tremendous attention from the last decade for thin film photovoltaics. Also, it has unique one-dimensional crystal structure and simple binary composition. However, the growth of Sb2Se3 thin films with its predominant orientation along [hk1] to make use of easy electrical charge transport seems challenging due to various governing growth parameters. In this work, we have studied the role of growth temperature (between 200 ℃ and 320 ℃) in the crystalline orientation of Sb2Se3 thin films on glass substrates via close-space thermal evaporation. In addition to growth orientation, we have investigated the effect of growth temperature on the surface morphology, elemental composition, film thickness, and optical properties of Sb2Se3 thin films. Electrical properties and photoresponse were measured on [hkl] and [hk0] oriented films to understand the effect of anisotropy and it is inferred that [hk1] oriented film as a favorable one for the charge transport. Also, the photoresponse results showed fair photoconductance under white light illumination and zero applied bias.

Effect of substrate temperature on structure, morphology and optical properties of Sb2Se3 thin films fabricated by chemical-molecular beam deposition method from Sb and Se precursors for solar cells

Sb2Se3 thin films were obtained by chemical-molecular beam deposition on soda-lime glass from high purity Sb and Se precursors at 400 °C, 450 °C and 500 °C substrate temperature. Due to the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained, which was confirmed by energy-dispersive X-ray microanalysis. The effect of substrate temperature on morphology, structure and optical properties of Sb2Se3 thin-films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy and from the analysis of absorption and transmission spectra of the films. Average diameters and lengths of Sb2Se3 rods deposited at different substrate temperature were the range of 0.5–2 µm and 1–4 µm respectively which was grown at different slope and compactness to the substrate. The optical bandgap of the films was determined from the transmission and reflection spectra and 1.16, 1.21 and 1.26 eV band gap energies were observed for 500, 450 and 400 ℃ substrate temperature Sb2Se3 thin films respectively.

Synthesis, thermal expansion and optical properties of ZrV2O7 thin films

Cubic ZrV2O7 thin films have been synthesized by sol-gel spin-coating method. The influences of annealing temperatures on the phase composition and morphology of ZrV2O7 thin films were investigated using XRD, SEM, and EDX. Negative thermal expansion (NTE) and optical performances of cubic ZrV2O7 thin films were analyzed using variable temperature XRD and UV–Vis spectroscopy. Results indicate that as-deposited ZrV2O7 thin films have an amorphous structure with smooth and dense surface. Cubic ZrV2O7 thin films were prepared after heat treatment at 720 °C for 1 h. It was found that the thin films contained V2O5 impurity with the Zr: V = 1:2 precursor solution. Pure cubic ZrV2O7 thin films were fabricated with the Zr: V = 1.75:2 precursor solution. Cubic ZrV2O7 thin films show isotropic NTE in the temperature range of 100–700 °C. The coefficients of thermal expansion (CTEs) of ZrV2O7 films along the a, b, and c axes are −6.88 × 10−6 °C−1, and the volumetric and linear CTEs are −20.56 × 10−6 °C−1 and -6.85 × 10−6 °C−1, respectively. The transmittance of cubic ZrV2O7 thin film is approximately 80 %.

Growth and Characterization of p-Type and n-Type Sb2Se3 for Use in Thin-Film Photovoltaic Solar Cell Devices

In this study, a two-electrode electrodeposition technique was employed to grow thin films of antimony selenide (Sb2Se3) on glass/fluorine-doped tin oxide (FTO) substrates. The highest quality thin films were consistently obtained within the range of 1600 mV to 1950 mV. Subsequent electrodeposition experiments were conducted at discrete voltages to produce various layers of thin films. Photoelectrochemical cell (PEC) measurements were performed to characterize the semiconductor material layers, leading to the identification of both p-Type and n-Type conductivity types. Optical absorption spectroscopic analysis revealed energy bandgap values ranging from 1.10 eV to 1.90 eV for AD-deposited Sb2Se3 samples and 1.08 eV to 1.68 eV for heat-treated Sb2Se3 samples, confirming the semiconducting nature of the Sb2Se3 material. Additionally, other characterization techniques, including X-ray diffraction analysis, reveal that the AD-deposited layers are almost amorphous, and heat treatment shows that the material is within the orthorhombic crystalline system. Heat-treated layers grown at ~1740 mV showed highly crystalline material with a bandgap nearing the bulk bandgap of Sb2Se3. Raman spectroscopy identified vibrational modes specific to the Sb2Se3 phase, further confirming its crystallinity. To explore the thin-film morphology, Scanning Electron Microscopy (SEM) was employed, revealing uniformly deposited material composed of grains of varying sizes at different voltages. Energy Dispersive X-ray analysis (EDX) confirmed the presence of antimony and selenium in the material layers.

Improved cyclic durability and chemical stability of WO3 thin films by incorporation of Nb2O5

To achieve commercial smart windows operating in environments exposed to air and moisture with a hot weather, there has been a steady demand for large-area electrochromic thin films with high cyclic durability and chemical stability. In this article, we discuss the change in the electrochromic performance of WO3 thin films through incorporation of Nb2O5, which is stable against an acid electrolyte and heated water. With the increase in the content of Nb2O5 achieved by increasing the sputtering power, the charge density and transmittance modulation gradually decreased, while the cyclic durability was noticeably improved. When the as-deposited WO3 thin films were soaked in water at 70 °C, their flat surface and electrochromic properties degraded significantly. Conversely, the deterioration of the surface morphology of the Nb2O5-incorporated WO3 thin films after etching in the heated water was alleviated, which led to electrochromic performances on par with those of the unetched films. This is an effective approach for manufacturing of electrochromic devices with an enhanced stability to prevent structural degradation under hot and humid conditions.

Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells

Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells

Mechanism of Ionomer Film Formation via Solution Drying.

Film formation via the drying of ionomer solutions is a crucial process that has a strong influence on the morphology and transport properties of polymer electrolyte membranes and thin films. However, the microscopic mechanism of this process remains unclear. Here, we elucidate this mechanism using a coarse-grained model based on all-atom molecular dynamics that accurately reproduces small-angle X-ray scattering spectra. In dilute ionomer solutions, ionomers form rod-like bundles with diameters of 1.5-2 nm. As the water solvent evaporates, these bundles gradually aggregate and connect to each other, while maintaining their diameter. Finally, the remaining water forms nanosized clusters surrounded by the surfaces of the bundles with hydrophilic sulfonate groups.

Study of surface morphology of Ag thin films prepared by sputtering and irradiation with keV Ar ion beam

In this paper, the possibility of preparing silver nanostructures with a high area density of nanoparticles of various shapes by the ion beam sputtering (IBS) method, using a glancing angle deposition (GLAD) configuration, and subsequent irradiation with heavy ions, was tested. In the experiment, keV Ar+ ions were used for both IBS and bombardment. The prepared nanostructures were analyzed by RBS and microscopic methods of SEM and AFM. It turned out that IBS/GLAD makes it possible to create silver nanostructures (networks of individual silver nanoparticles), but only with relatively low areal densities (∼ 70 µm2). The bombardment led to changes in the porosity only after high ion fluences, but also to disruption of the nanostructures. Even so, the IBS method with GLAD configuration has been shown to be a promising way to prepare high-porosity nanostructures. Nevertheless, further experimental efforts will be needed to find the optimal technology.

Inducing molecular orientation in solution-processed thin films of fluorene-bithiophene-based copolymer: thermal annealing vs. solvent additive.

A deep understanding of the factors influencing the morphology of thin films based on conjugated polymers is essential to boost their performance in optoelectronic devices. Herein, we investigated the electronic structure and morphology of thin films of the copolymer poly(9,9-dioctyl-fluorenyl-co-bithiophene) (F8T2) in its pristine form as well as samples processed with the solvent additive 1,8-diiodooctane (DIO) or post-processed through thermal annealing treatment. Measurements were carried out using angle-resolved S K-edge NEXAFS (near-edge X-ray absorption fine structure) in total electron yield (TEY) and fluorescence yield (FY) detection modes. Two main transitions were observed at the S 1s NEXAFS spectra: S 1s → π* and S 1s → σ* (S-C). The observed dichroism pointed to a face-on orientation of the conjugated backbone, which was significantly increased for F8T2 films processed with DIO. Resonant Auger decay spectra were obtained and analyzed using the core-hole clock (CHC) method. An enhancement in the charge transfer process was observed for thermally annealed films, especially for samples processed with DIO, corresponding to an increase in film ordering. Furthermore, the investigated films were characterized using X-ray photoelectron spectroscopy, attesting to the presence of the thiophene unit in the samples and demonstrating that some of its sulfur atoms were positively polarized in the F8T2 films. All these experimental findings were compared with molecular dynamics (MD) simulations of film evaporation with and without DIO. The use of MD, together with mathematical modeling, was able to explain the major effects found in the experiments, including the polarization of sulfur atoms. The simultaneous use of powerful spectroscopic techniques and theoretical methods shed light on key aspects linking film morphology with fabrication procedures.

Electrodeposition of Cu2NiSnS4 absorber layer on FTO substrate for solar cell applications.

Potentiostatic and in situ electrochemical impedance spectroscopy (EIS) measurements were recorded to study the nucleation and growth mechanisms of electrodeposited Cu2NiSnS4 (CNTS) thin films from aqueous solution at different applied potentials. The electrodeposition process of Cu-Ni-Sn-S precursors were studied using cyclic voltammetry and chronoamperometry techniques. The nucleation and growth mechanism of these films was found to follow a three-dimensional progressive nucleation limited by diffusion-controlled growth. The nucleation mechanism is found to be influenced by the presence of S2O3 2-, which prompts the electrodeposition of S. In situ electrochemical impedance spectroscopy (EIS) investigates the electrodeposition behavior of CNTS precursors on the surface electrode. A capacitive behavior was observed at high frequencies, while the presence of Warburg diffusion was detected only for potentials less negative than -1.0 V vs. Ag/AgCl. The crystallographic structure, morphology, composition, and optical band gap of CNTS thin films was examined using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV-visible spectroscopy. Electrodeposition at -0.98 V vs. Ag/AgCl resulted in the formation of microsheets with a uniform morphology and homogeneous thickness of sulfurized CNTS film. This potential also proved to be optimal for achieving higher crystallinity, a pure phase, and a suitable band gap energy of approximately 1.6 eV.

The effects of side chain engineering on the morphology and charge transport of the A-DA1D-A type of non-fullerene acceptor: a multiscale study.

The appearance of the A-DA1D-A type of non-fullerene acceptor Y6 and its derivatives significantly improves the power conversion efficiency of organic solar cells. However, the effects of the modulation of the side chains of Y6 on its morphology and charge transport in organic thin films are still not well understood. In this work, we have systematically studied the effects of symmetric modifications of the length of alkyl side chains and the types, such as branched or straight alkyl chains, and the introduction of heteroatoms to side chains on these properties. A multiscale study, including density functional theory and classical molecular dynamics simulations, has been used to answer this open question. We find that face-on configurations are generally dominant for the AA, A1A1, and DD stacking of molecular pairs. With respect to prototype Y6, the introduction of oxygen atoms to outer alkyl side chains could enhance AA stacking but worsen the electrical network and enlarge the reorganization energy during electron transfer, and changing outer side straight alkyl chains to branched chains ruins π-π stacking of all units significantly. Finally, we discover that shortening outer alkyl side chains appropriately or changing inner branched chains to straight chains with the same number of carbon atoms is a good strategy to improve the molecular π-π stacking and electron mobility of Y6 while changing outer straight side chains to branched chains or introducing oxygen atoms to outer straight chains is the opposite. This study provides a new insight into the relationship between morphology and electron mobility and will be helpful for the design of future high-performance non-fullerene acceptors.

Electrical performance of La-doped In2O3 thin-film transistors prepared using a solution method for low-voltage driving.

In this paper, La-doped In2O3 thin-film transistors (TFTs) were prepared by using a solution method, and the effects of La doping on the structure, surface morphology, optics, and performance of In2O3 thin films and TFTs were systematically investigated. The oxygen defects concentration decreased from 27.54% to 17.93% when La doping was increased to 10 mol%, and La served as a carrier suppressor, effectively passivating defects such as oxygen defects. In fact, the trap density at the dielectric/channel interface and within the active layer can be effectively reduced using this approach. With the increase of La concentration, the mobility of LaInO TFTs decreases gradually; the threshold voltage is shifted in the positive direction, and the TFT devices are operated in the enhanced mode. The TFT device achieved a subthreshold swing (SS) as low as 0.84 V dec-1, a mobility (μ) of 14.22 cm2 V-1 s-1, a threshold voltage (VTH) of 2.16 V, and a current switching ratio of Ion/Ioff of 105 at a low operating voltage of 1 V. Therefore, regulating the doping concentration of La can greatly enhance the performance of TFT devices, which promotes the application of such devices in high-performance, large-scale, and low-power electronic systems.