P-type transparent conducting oxide Sr 0.9Ca 0.1Cu 2O 2 (SCCO) films were prepared by pulsed laser deposition (PLD) technique on glass and n-Si (1 0 0) substrates. Some critical experiment factors were investigated, and it was found that well-crystallized, single phase SCCO films could be obtained with the substrate temperature higher than 350 °C, and the crystallinity was improved with the increase of laser energy fluence. Sr 0.9Ca 0.1Cu 2O 2/n-Si (SCCO/n-Si) heterojunction and prototype thin film solar cell were demonstrated respectively. Diode characteristic in the current–voltage response was observed and the ideality factor ( n) of the diode was 3.7. The obtained n value is larger than unity due to structural imperfections of the layer and interface states. A prototype thin film solar cell with the best solar cell performance exhibits an open-circuit voltage ( V oc) of 140 mV and a short-circuit current density ( J sc) of 0.072 mA/cm 2 under irradiation of AM1.5 and 100 mW/cm 2.