Abstract
The deposition and fundamental properties of a-Si 1− x C x :H thin films made using a butane gas source, and of microcrystalline films including μc-Si:H and μc-3C-SiC:H are reviewed from the viewpoint of hetero-junction formation. The durability of TiO 2 thin films upon atomic hydrogen exposure is also reviewed for suppressing the deoxidation of transparent electrodes accompanied by the use of a new microcrystalline silicon carbon alloy for a window layer. The future direction for the development of hetero-junction Si thin film solar cells by hot-wire CVD is discussed.
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