Bilayer Thin Films Research Articles

Optimization of the Fabrication Process for Phototransistors With IGZO/TiOx Bilayer Thin Films to Improve Electrical and Photoresponse Characteristics

Optimization of the Fabrication Process for Phototransistors With IGZO/TiO_x Bilayer Thin Films to Improve Electrical and Photoresponse Characteristics

Impact of Metal Deposition on the Optical and Interface Properties of NiO: Growth and Characterization of NiO/Metal Thin Bilayer Films

Abstract Since transparent conductive oxides (TCOs) provide electrical conductivity together with optical transparency, they have found wide applications in optoelectronic devices and photovoltaics. Among the TCOs, nickel oxide (NiO) is challenging due to its inherent trade-off between transparency and electrical conductivity. To address this challenge, one effective approach is to deposit a metal layer onto NiO thin films. In this work, NiO, NiO/Au, NiO/Ag, and NiO/Cu thin films are prepared by sputtering and thermal evaporation technique on glass substrates and fully characterized finding the proper film for optoelectronic applications. The electrical and optical properties of the fabricated films are examined by four-point probe measurements and optical spectrometry. According to the obtained results, the NiO/Au, NiO/Ag, and NiO/Cu bilayers show sheet resistance of 200, 338, and 925 Ω / sq respectively while their optical bandgaps vary from 3.2 to 3.76 eV. These findings provide valuable insights into the perfor-mance of these films, making them potentially viable choices for various optoelectronic applications.

Extraction of two-magnon scattering and detection of inverse spin Hall effect up to 40 GHz inlow-damping Fe65Co35/Pt bilayer thin film

Abstract We report an investigation of the inverse spin Hall effect (ISHE), as a measure of the pure spin current (JS), induced by spin pumping in a Fe65Co35/Pt bilayer using coplanar waveguide ferromagnetic resonance (CPW-FMR) in the in-plane (IP) geometry over the broadband microwave frequency range of 8-40 GHz. From the IP-FMR measurements, the defect-induced two-magnon scattering (TMS) contribution is evaluated by analyzing the frequency dependence of FMR linewidth using Arias and Mills approach. Here, we have determined a very low Gilbert damping constant (αG) for Fe65Co35 bare film around 1.3 x 10−3, which is essential for the high spin current (> 107 A/m2) generation. The enhanced value of αG ≈ 3.2 x 10−3 obtained for Fe65Co35/Pt bilayer film is due to spin pumping damping, αSP = 1.9 x 10−3, confirmed by the ISHE induced DC voltage (VDC) signal measured across the edges of Pt layer. Out-of-plane (OP) angular ISHE measurements have been performed to disentangle spin pumping from spin rectification effects in the VDC signal. Further, we evaluated the effective spin-mixing conductance geff ↑↓ = 3.33 x 1019 m-2, which is higher than the values reported in FeCo-alloy-based bilayer systems. The present study aims to detect the JS injected by low-damping Fe65Co35 thin films, leading to the realization of energy-efficient spintronic devices.

Development of nano-porous Au thin film at room temperature via ion irradiation in a-Ge/Au bilayer system followed by chemical etching of Ge

The development of nano-porous gold (NPG) via room temperature ion irradiation has been presented in detail. The bilayer thin films of a-Ge/c-Au have been irradiated by 100 MeV Ni ions with the fluence of 5 × 1013 ions cm−2 at room temperature. NPG is obtained by selectively etching Ge off from the Au matrix by dipping the Ge/Au thin film into 10 % H2O2 solution. Diffusion of Ge and Au across the interface under irradiation was confirmed by TRIM simulation and RBS spectra. The SEM image and EDX spectra confirms the formation of NPG with high purity. In addition, the statistical and fractal analysis of AFM image also confirms the formation of NPG. NPG system has been observed to show very good optical properties (low reflectance and high transmittance). The high quality NPG prepared by this method can be useful in the fields like optical sensors, transparent conductive electrodes, anti-reflective coatings, and photo-detector technology.

Laser-initiated electron and heat transport in gold-skutterudite CoSb3 bilayers resolved by pulsed x-ray scattering

Abstract Electron and lattice heat transport have been investigated in bilayer thin films of gold and CoSb3 after photo-excitation of the nanometric top gold layer through picosecond x-ray scattering in a pump-probe setup. The kinetics of heat transfer are detected by thermal lattice expansion and compared to simulations based on the two-temperature model of coupling of electron and phonon degrees of freedom. The unexpected observation of a larger portion of the deposited heat being detected in the underlying CoSb3 layer before the topmost gold layer is heated supports the picture of transport of the photo-excited electrons from gold to the underlying layer to be converted into lattice heat. The change of partition of heat between the gold and CoSb3 layer with laser fluence and wavelength (either exciting intraband transitions or additionally interband transitions) is rooted in the amplitude of electron temperature. Higher electron temperatures result in a longer equilibration time with the lattice and thus a larger proportion of ballistic electron transport across the interface.

Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer.

The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness of the active layers, we achieved significant improvements in the performance of the LZTO/ZTO TFTs. An XPS analysis was performed to elucidate the impact of the varying O2 element distribution ratio within the LZTO/ZTO bilayer thin film on the TFTs performance, which was directly influenced by the modification in the active layer thickness. Furthermore, we utilized atomic force microscopy to analyze the effect of altering the active layer thickness on the surface roughness of the LZTO/ZTO bilayer film and the impact of this roughness on the TFTs electrical performance. Through the optimization of the ZTO active layer thickness, the LZTO/ZTO TFT exhibited an mobility of 10.26 cm2 V-1 s-1 and a switching current ratio of 5.7 × 107, thus highlighting the effectiveness of our approach in enhancing the electrical characteristics of the TFT device.

Inverse-proximity effect and 2D superconductivity of Ta/Au bilayer thin films

This study investigated the inverse-proximity effect (IPE) and two-dimensional (2D) superconductivity in α-phase Ta films and Ta/Au bilayers. These bilayers were deposited onto silicon substrates using a direct current (DC) sputtering system. The findings reveal that higher substrate temperatures and increased film thickness facilitate the formation of α-Ta up to a temperature limit of 300°C, resulting in higher Tc around 3.5–3.7 K. The fundamental superconductivity of α-Ta thin films is similar to that of a conventional s-wave BCS superconductor. The IPE in the Ta/Au bilayer films was observed, where the Tc increases and decreases with the Au overlayer thickness. This behavior was quantitatively described by considering a model accounting for the reduced superconducting fluctuations induced by the highly conductive Au layer. Furthermore, the presence of 2D superconductivity in the Ta film and Ta/Au bilayer was examined through critical field analysis, vortex motions, and Berezinskii-Kosterlitz-Thouless (BKT) transition detection. Finally, the results were summarized in an H-T phase diagram illustrating the presence of IPE and 2D superconductivity in a Ta/Au bilayer. This study provides additional insights into 2D superconductivity within normal/superconductor (N/S) bilayers, laying the groundwork for future research to optimize film properties to align more closely with theoretical expectations.

Bimetallic AgCo Nanoparticle Synthesis via Combinatorial Nanosecond Laser‐Induced Dewetting of Thin Films

Herein, a combinatorial approach is developed to conduct high‐throughput studies on the nanosecond pulsed laser‐induced dewetting phenomenon of bilayer Ag–Co metallic thin films. Laser irradiation results in the spontaneous rupture of these films in nanosecond timescale, forming bimetallic nanoparticles (NPs) through intermediate stages of hole formation and bicontinuous nanostructures. This approach utilizes bilayer thin films with thickness gradients in both Ag and Co layers (referred to as bigradient samples) while maintaining a constant overall thickness. The laser irradiation on such bigradient bilayer films facilitates control on Ag and Co ratio in the thin films, thus enabling material libraries of Ag–Co NPs covering a large compositional variation. The evolution of NPs with a correlation between NP diameter and interparticle spacings is further studied. The study reveals monotonic increase in NP size and interparticle spacing in Co/Ag bilayer arrangement, while an increase and subsequent decrease in the NP size is observed at 50% Ag in Ag/Co bigradient films. A transition from intermediate stage hole formation to bicontinuous nanostructures with changing composition is also observed. These changes in intermediate stage morphologies and dewetting mechanism are attributed to variation of the free energy of the bilayer system dominated by intermolecular interaction forces.

Effect of sputtering power and thickness ratios on the materials properties of Cu–W and Cu–Cr bilayer thin films using high power impulse magnetron and DC magnetron sputtering

This study investigates the influence of Cu thickness ratios on the structural, morphological, and mechanical properties of sputtered Cu–W and Cu–Cr bilayer thin films. Employing high power impulse magnetron sputtering (HiPIMS), five distinct thickness ratios of 1:3, 3:5, 1:1, 5:3, and 3:1 were analyzed and compared to bilayer films developed using direct current magnetron sputtering (DCMS). The microstructural and surface characteristics of these films were evaluated using x-ray diffraction (XRD), atomic force microscopy, and scanning electron microscopy. Electrical properties were measured using a four-point probe, while mechanical properties were assessed through nanoindentation. Results reveal that increasing Cu thickness in Cu–W and Cu–Cr bilayers inversely affects hardness, grain size, and roughness, highlighting the influence of thickness ratios on film properties. Films with a higher Cu thickness ratio in both Cu–W and Cu–Cr bilayer systems deposited by HiPIMS exhibited lower hardness, smaller grain size, and reduced average roughness. Cross-sectional analysis and XRD confirmed the impact of thickness ratio on crystal phase and microstructure, indicating smoother columnar structures. Specifically, the HiPIMS-deposited Cu–Cr 3-1 film exhibited the lowest resistivity, at 4.77 μΩ cm, and hardness, measuring 8.26 GPa. Moreover, the 1:1 ratio films of Cu–W and Cu–Cr demonstrated hardness values of 13.81 and 11.37 GPa, respectively, which were 1.39 times higher than the films grown by DCMS. Additionally, variations in the bilayer thickness ratio significantly affected the electrical properties of the films. The enhanced properties of HiPIMS films are attributed to the higher peak power density of the target, leading to increased ion energy and deposition of dense grain structures.

Enhancement of Photosensitivity in a Low-Operating-Voltage Organic–Inorganic Bilayer Thin-Film Transistor by Using an Asymmetric Source–Drain Electrode

Enhancement of Photosensitivity in a Low-Operating-Voltage Organic–Inorganic Bilayer Thin-Film Transistor by Using an Asymmetric Source–Drain Electrode

Field-Driven Solid-State Defect Control of Bilayer Switching Devices.

We develop a framework for controlling and investigating reversible ionic transfer between two solid metal oxides layers by examining field-driven changes in electrical properties of the thin film bilayer oxide system Pr0.1Ce0.9O2/La1.85Ce0.15CuO4 (PCO/LCCO). We show that we can reversibly redistribute oxygen ions by applied voltage in a highly controlled and reversible fashion near ambient temperatures over large oxygen ion activity limits, which, for the first time, is directly interpretable by defect chemical models. This allowed us to determine how defect concentrations in each layer systematically varied with voltage and the subsequent impact on each film's conductance. These results showcase the relevance and applicability of defect chemical models, traditionally considered only at elevated temperatures, to the development of bilayer devices of importance to neuromorphic memory applications. This allows for a more systematic approach for studying and understanding the solid-solid exchange process in electrochemically controlled microelectronic devices. Moreover, our work sets the foundation for the development of large-area field-driven defect-controlled bilayer switching devices with potential application to a broad array of functionally modulated devices.

Flexible Thermoelectric Electrode with a New Nitrogen-Modified MXene/SWCNT Layered Structure for Efficient Low-Grade Thermal Energy Collection.

Confronting the global challenge of energy efficiency in the backdrop of environmental concerns, the innovation of a flexible thermoelectric electrode marks a significant stride forward, especially in the realm of low-temperature heat recovery. This investigation unveils a pioneering electrode material, a nitrogen-doped SWCNT/MXene bilayer thin film, which was meticulously engineered for thermoelectric systems. Surpassing the conventional Pt electrode with inherent inflexibility and prohibitive cost, our proposed electrode showcases excellent ductility alongside commendable thermoelectric properties. Our electrodes demonstrate significant advancement, achieving a thermopower output of 14.11 μW·cm-2 with the Seebeck coefficient escalating to 1.61 mV·K-1 even at a modest temperature differential of 40 °C. The results mark a substantial 32% enhancement in thermoelectric performance compared to the power output at 10.69 μW·cm-2 for a Pt electrode under similar conditions. This remarkable improvement underscores the superior efficiency and potential of our electrodes for practical thermoelectric application, offering a viable and cost-effective alternative to traditional Pt-based solutions. This innovation not only positions itself as a formidable contender to Pt electrodes but also signals a new dawn for efficient thermoelectric energy harvesting, underscored by the material's scalability and ready availability.

Untethered Microgrippers for Biopsy in the Upper Urinary Tract.

Untethered microrobots offer the possibility to perform medical interventions in anatomically complex and small regions in the body. Presently, it is necessary to access the upper urinary tract to diagnose and treat Upper Tract Urothelial Carcinoma (UTUC). Diagnostic and treatment challenges include ensuring adequate tissue sampling, accurately grading the disease, achieving completeness in endoscopic treatment, and consistently delivering medications to targeted sites. This work introduces microgrippers (µ-grippers) that are autonomously triggered by physiological temperature for biopsy in the upper urinary tract. The experiments demonstratedthat µ-grippers can be deployed using standard ureteral catheters and maneuvered using an external magnetic field. The μ-grippers successfully biopsied tissue samples from ex vivo pig ureters, indicating that the thin-film bilayer springs' autonomous, physiologically triggered actuation exerts enough force to retrieve urinary tract tissue. The quality of these biopsy samples is sufficient for histopathological examination, including hematoxylin and eosin (H&E) and GATA3 immunohistochemical staining. Beyond biopsy applications, the µ-grippers' small size, wafer-scale fabrication, and multifunctionality suggest their potential for statistical sampling in the urinary tract. Experimental dataand clinical reports underscore this potential through statistical simulations that compare the efficacy of µ-grippers with conventional tools, such as ureteroscopic forceps and baskets.

Phase jumps in coupled magnonic waveguides

In this work we present an experimental study of the phase characteristics of magnetostatic quasi-surface waves (MQSW) in a tangentially magnetized yttrium iron garnet (YIG) thin film bilayer. The phase of MQSWs was measured as a function of air gap (g) between two magnonic waveguides. It is shown that the energy exchange between two YIG layers is accompanied by relatively sharp π-radian phase jumps of MQSWs, at specific values of g. The effect was studied at large wavelengths of the MQSWs, and at a propagation distance of 1 cm. The theory predicts that the slope of the phase shift (∂φ/∂g) at submicrometric values of g can be of the order of a few degrees per nm.

Effect of Zinc Doping and Porosity on Structural, Morphological and Gas Sensing Properties of Porous Zn:SnO2 Bilayer Thin Film

Effect of Zinc Doping and Porosity on Structural, Morphological and Gas Sensing Properties of Porous Zn:SnO2 Bilayer Thin Film

Analysing the surface morphology of annealed FTO/ZnS bilayer films: stereometric, fractal, and wettability approaches

The surface micromorphology and roughening of the thermal evaporation-coated FTO/ZnS bilayer thin films annealed at 300, 400, 500, and 550∘C\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$550\\,^\\circ{\ ext{C}}$$\\end{document} for 1 h have been studied. AFM images of the prepared samples were analysed by the MountainsMap software, and the effects of the annealing temperature on the surface texture of the FTO/ZnS thin film’s surface were investigated. Stereometric and advanced fractal analyses showed that the sample annealed at 500∘C\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$500\\,^\\circ{\ ext{C}}$$\\end{document} exhibited greater surface roughness and greater skewness and kurtosis. This film also has the most isotropic surface and exhibits the highest degree of heterogeneity. Also, despite the decrease in surface roughness with increasing temperature from 500 to 550∘C\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$550 \\,^\\circ{\ ext{C}}$$\\end{document}, the fractal dimension tends to increase. The static water contact angle measurements indicate that the film annealed at 500∘C\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$500 \\,^\\circ{\ ext{C}}$$\\end{document} exhibits higher hydrophobicity, which can be attributed to its greater topographic roughness. Our research indicates that the surface morphology of FTO/ZnS bilayer thin films is influenced by the annealing temperature. Changing factors such as roughness, fractality, and wettability parameters to help improve surface performance make the FTO/ZnS bilayer suitable for application in electronic and solar systems.

Ion Beam-Induced modification in the optical properties of the bilayer of nano-structured amorphous selenium and multi-walled carbon Nanotubes: A study by 70 MeV Ni Ions

In this study, we report improved physical properties of selenium with multi-walled carbon nanotubes (MWCNTs) resulting from a homogeneous mixture of CNT-Se bi-layer thin film by using swift heavy ion irradiation. FESEM micrographs clearly showed the inter-diffusion of Se nanoparticles into MWCNTs following swift heavy ion (SHI) irradiation, EDX validates the elemental composition. The existence of different phonon modes (LO mode and D, G, G' bands) has been found in the Raman spectra of the investigated bi-layer thin films. UV–Visible spectroscopic analysis of pristine CNT-Se thin films show two sharp absorption edges at ∼670 nm and ∼340 nm. After swift heavy ion irradiation, the sharp absorption edge at ∼670 nm exhibits a blue shift, whereas the absorption edge at ∼340 nm exhibits a red shift, confirming the homogeneous mixing of two layers. These remarkable shifts found in the optical properties of CNT-Se bi-layer make the investigated material feasible for many optoelectronic device applications.

Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2 Trilayers for Ultraviolet Laser Applications.

High-performance thin films combining large optical bandgap Al2O3 and high refractive index HfO2 are excellent components for constructing the next generation of laser systems with enhanced output power. However, the growth of low-defect plasma-enhanced-atomic-layer-deposited (PEALD) Al2O3 for high-power laser applications and its combination with HfO2 and SiO2 materials commonly used in high-power laser thin films still face challenges, such as how to minimize defects, especially interface defects. In this work, substrate-layer interface defects in Al2O3 single-layer thin films, layer-layer interface defects in Al2O3-based bilayer and trilayer thin films, and their effects on the laser-induced damage threshold (LIDT) were investigated via capacitance-voltage (C-V) measurements. The experimental results show that by optimizing the deposition parameters, specifically the deposition temperature, precursor exposure time, and plasma oxygen exposure time, Al2O3 thin films with low defect density and high LIDT can be obtained. Two trilayer anti-reflection (AR) thin film structures, Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2, were then prepared and compared. The trilayer AR thin film with Al2O3/HfO2/SiO2 structure exhibits a lower interface defect density, better interface bonding performance, and an increase in LIDT by approximately 2.8 times. We believe these results provide guidance for the control of interface defects and the design of thin film structures and will benefit many thin film optics for laser applications.

Energy storage and dielectric properties in PbZrO3/PbZrTiO3 antiferroelectric/ferroelectric bilayer bulk structure using Landau theory

Employing Landau theory and the Landau–Khalatnikov (L–K) equation of motion, we investigate the phase transitions in individual layers of antiferroelectric lead zirconate (PbZrO3), ferroelectric lead zirconate titanate (PbZrTiO3), and an antiferroelectric/ferroelectric PbZrO3/PbZr(0.21)Ti(0.79)O3 bilayer bulk structure. We examine the dielectric hysteresis loop behavior of the three systems, with a specific focus on the PbZrO3/PbZr(0.21)Ti(0.79)O3 bilayer under different stabilities of the PbZrO3 layer. In addition, we explore cases where the coercive field of the bilayer structure is lower than that of the PbZrTiO3 individual layer. The recoverable electric energy for the PbZrO3/PbZr(0.21)Ti(0.79)O3 bilayer increases significantly to 118 J/cm3 at an applied field of 7.5 × 108 V/m at 20 °C. In comparison, the PbZr(0.21)Ti(0.79)O3 layer reaches 71.8 J/cm3 under the same field and temperature conditions. This is much higher than those predicted experimentally by previous studies on thin film single and bilayer structures (15.6 and 28.2 J/Cm3 respectively), indicating that the antiferroelectric/ferroelectric PbZrO3/PbZr(0.21)Ti(0.79)O3 bilayer bulk structure could be used to target specific large-scale, long-term energy storage applications. Upon increasing the value of the coupling coefficient, the transition temperatures of the PbZrO3 layer and the PbZrO3/PbZr(0.21)Ti(0.79)O3 bilayer are increased up to the transition temperature of the PbZr(0.21)Ti(0.79)O3 individual layer (450 °C). This increment in the transition temperature in the bilayer system contributes to its stability in storing energy at higher temperatures. Furthermore, the recoverable energy density of the PbZrO3/PbZr(0.21)Ti(0.79)O3 bilayer increases further with temperature from 20 to 440 °C correlated with the rise in the difference between the spontaneous and the remanent polarizations (Ps − Pr). The significant stored energy observed over a wide temperature range highlights the promise of this bilayer structure for creating high-power capacitors where stability at different temperatures is crucial and possesses greater energy storage capacity.

Enhancement of photoresponse and photovoltaic properties in KBiFe2O5/BiFeO3 bilayer thin films

In this report, the performance of a new photovoltaic device configuration in which bilayer KBiFe2O5 (KBFO)/BiFeO3 (BFO) as absorber materials have been investigated and compared with the single active layer-based devices of BFO and KBFO. The obtained short-circuit current density of 58.81 μAcm−2, open-circuit voltage of 0.65 V, and power conversion efficiency of 0.014 % for the complete photovoltaic device glass/FTO/KBFO/BFO/Ag are comparatively higher than that of glass/FTO/BFO/Ag and glass/FTO/KBFO/Ag devices. It has been observed that the active bilayer KBFO/BFO shows switchable photoresponse with respect to positive and negative polarities. This work may offer the procedures for further optimizing the photo absorber layer, thereby improving the performances of multiferroic-based devices for ferroelectric photovoltaic applications.