The oxidizing activity of ECR oxygen plasma is investigated by evaluating the oxidation state of the HoBa 2Cu 3O χ (HBCO) thin films annealed in this plasma. The conditions under which these films grow and under which they are thermodynamically stable were determined in molecular oxygen and in oxygen plasma. The oxidizing activity of oxygen plasma is equivalent to that of molecular oxygen at a pressure three orders of magnitude higher. Oxygen plasma expands the thermodynamic stability limit toward higher temperatures and the oxidizing activity limit toward lower oxygen pressures.
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