Thermionic Process Research Articles

Increasing the Efficiency of Thermoelectric Conversion of Solar Energy

The article considers the latest achievements in the field of thermionic conversion of solar energy. The key aspects of thermionic emission, the problems of reducing the electrode work function and increasing the efficiency of devices are analyzed. It is shown that diamonds doped with phosphorus can be an attractive material for the purposes of thermionic emission. In this case, the presence of donor states can significantly narrow the space charge region, and at the same time reduce the potential barrier in the work function. The studies also found that the most successful and widely used method for overcoming the space charge effect is filling the interelectrode gap with cesium. The efficiency of thermionic conversion devices for solar energy increases by 1.6 times. Particular attention is paid to the use of new materials, such as nanostructures and carbon nanotubes, as well as promising technologies, such as photonic enhancement of thermionic processes. The analysis of the results showed that the photonic enhancement of the electron yield due to illumination is greater in p-type silicon, as predicted by theoretical models. The thermionic current increases by 1.7 times compared to silicon. The distance between the quasi-Fermi level and the Fermi level in n-type silicon is less than this distance in p-type silicon. As a consequence, the number of electrons in the conduction band is smaller. Methods for combating the space charge effect and optimizing the configuration of energy conversion systems are discussed.

Thomson effect in thermionic refrigeration: Enhanced performance of graphene/2D-semiconductor/graphene heterostructure cooler

Two-dimensional (2D) materials and their heterostructures have been widely explored for high-performance energy conversion applications. The Thomson effect—a higher order transport process—plays an important role in thermoelectric devices, yet its effect on the performance of thermionic devices remains unknown thus far. Here, we investigate the performance of thermionic refrigeration in vertically stacked heterostructure (VHS) and laterally stitched heterointerface (LHS) composed of a graphene and a 2D semiconductor (i.e., MoS2 and WSe2) in the presence of the Thomson effect. Using a temperature-dependent Seebeck coefficient, we derived the analytical expressions of the cooling efficiency and the effective ZT. We shall show that the Thomson effect improves the coefficient of performance (COP) by up to 20%, particularly, in the case where the temperature difference between the cold and the hot electrodes is large. However, the Carnot efficiency decreases with the temperature difference. The overall COP is reduced by the Thomson effect. We calculate the COP in graphene/MoS2/graphene and graphene/WSe2/graphene VHS and LHS devices. We show that the LHS composed of WSe2 significantly outperforms the VHS and MoS2 counterpart. These findings provide an understanding of thermionic processes in the higher-order transport regime and shall offer insights into the design of novel 2D material heterostructure thermionic energy converters.

Semi analytical model for electrical transport in single wall carbon nanotube thin film transistors

With the recent advances in carbon nanotube (CNT) electronics, transistors made of thin films of single wall CNTs (SWNTs) are gaining great attention due to their high quality electrical characteristics. With such improvements it has become essential to develop suitable models to accurately predict the electrical transport in such devices which in the current scenario remains scarce. This work presents a numerical simulation of current transport in SWNT thin film-based transistors (TFTs). The developed model considers both Ohmic and Schottky type contacts that are exhibited by such field effect transistors based on which two separate modes of transport for electrons and holes are described. The electron transport is described through a tunneling transmission process while the hole transport is described by a thermionic transmission process where the model treats each SWNT individualistically and determines the overall current through a novel iterative process. The accuracy of the proposed model is verified by comparing it with multiple experimental data.

Design and characterisation of a bi-modal solar thermal propulsion and power system for small satellites

Small satellites with increased capabilities in terms of power and propulsion are being demanded for future missions. This paper addresses an alternative bi-modal solution which consists of a solar thermal propulsion system coupled with a micro-Organic Rankine Cycle system, to co-generate thrust and electrical power. Current literature on bi-modal systems is limited to static power conversion systems such as thermionic conversion processes. Therefore, this paper expands the research of bi-modal systems to dynamic power conversion systems and latent heat storage systems. The paper documents the design process, key design parameters, and feasibility of this system for a Geostationary Transfer Orbit to Lunar Orbit insertion mission. The results of a single-objective optimisation show the system is most suitable on-board small satellites with a gross mass above 300 kg. The propellant accounts for 50% of the total system mass. The final design uses Silicon as the latent heat energy storage system due to its high specific energy of more than 250 Wh/kg. Additionally, the enthalpy method is used to describe the dynamic behaviour of the phase change material and results show the insulation thermal conductivity has the largest effect, up to 17%, on the receiver’s maximum achievable steady-state temperature.

Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors

This paper investigates the degradation of vertically aligned gallium nitride (GaN) nanowire (NW) arrays submitted to gate bias stress and UV light. Based on electrical tests and simulations, we demonstrate the existence of trapping processes that depend on the applied stress voltage ${V}_{\textsf {Gstress}}$ and on the applied light during stress (wavelength, $\lambda $ ). We demonstrate the following original results: 1) for positive and negative ${V}_{\textsf {Gstress}}$ conditions, no significant variation in dc characteristics is observed when the samples are stressed in dark and 2) when the devices are submitted to negative ${V}_{\textsf {Gstress}}$ and to UV light, a positive variation in threshold voltage ( ${V}_{\textsf {th}}$ ) is observed. The positive ${V}_{\textsf {th}}$ shift is ascribed to the transfer and trapping of electrons from the gate metal to the oxide, promoted by UV light. We also evaluated the temperature dependence of the threshold voltage shift under UV light. We demonstrated an increased trapping at higher temperatures, indicating a role of thermionic processes in electron trapping. On the other hand, detrapping from oxide states proceeds through defect-mediated conduction, i.e., is limited by the number of available states.

Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

This paper analyses the influence of the GaN and Si3N4 passivation (or “cap”) layer on the top of the AlGaN barrier layer on the performance and reliability of Schottky barrier diodes with a gated edge termination (GET-SBDs). Both GaN cap and Si3N4 cap devices show similar dc characteristics but a higher density of traps at the SiO2/GaN interface or/and an increase of the total dielectric constant in the access region result in higher $R_{\mathrm{ON}}$ -dispersion in GaN cap devices. The leakage current at medium/low temperatures in both types of devices shows two low-voltage-independent activation energies, suggesting thermionic and field-emission processes to be responsible for the conduction. Furthermore, a voltage-dependent activation energy in the high-temperature range occurs from low voltages in the GaN cap devices and limits their breakdown voltage ( ${V}_{\mathsf {BD}}$ ). Time-dependent dielectric breakdown measurements show a tighter distribution in Si3N4 cap devices (Weibull slope $\beta = {3.3}$ ) compared to GaN cap devices ( $\beta = 1.8$ ). Additional measurements in plasma-enhanced atomic layer deposition (PEALD)-Si3N4 capacitors with different cap layers and TCAD simulations show an electric field distribution with a strong peak within the PEALD-Si3N4 dielectric at the GET corner, which could accelerate the formation of a percolation path and provoke the device breakdown in GaN cap SBDs even at low-stress voltages.

Dust Charging and Propagation of Dust-Acoustic Waves in a Multicomponent Thermal Dusty Plasma System

An analytical model is developed with the aim to investigate the propagation of dust-acoustic (DA) waves in a multicomponent thermal dusty plasma system including ion species as well. Dust particles are considered positively charged by electron and ion currents, thermionic and UV photo-ionic processes. The model is applied to laboratory plasma as well as Martian atmospheric plasma to explain the nature of dust potential variation as well as characteristics of DA propagation modes within the linear and nonlinear regimes for given plasma parameters. In the nonlinear regime, the KdV equation is derived, and the equation is seen to support the propagation of compressive solitons in laboratory plasma system and rarefactive solitons in the case of Martian atmospheric plasma. The inclusion of ion species in the system is seen to have an important role in determining the propagation speed, the amplitude, and the corresponding width of solitons. The thermionic work function W, photon yield factor Y, and low value of flux density of UV photon beam J do not have an appreciable impact on dispersion relation and DA soliton structures. On the contrary, noticeable changes occur in the case of the dust surface potential obtained in both laboratory and Martian plasmas.

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials.

We identify a new universality in the carrier transport of two-dimensional (2D) material-based Schottky heterostructures. We show that the reversed saturation current (J) scales universally with temperature (T) as log(J/T^{β})∝-1/T, with β=3/2 for lateral Schottky heterostructures and β=1 for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic systems, single- and few-layer graphene, transition metal dichalcogenides, and thin films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of β=2 scaling in the classic diode equation widely used over the past sixty years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D material-based heterostructures, thus paving the way for both a fundamental understanding of nanoscale interface physics and applied device engineering.

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

The surface photovoltage (SPV) technique was used to study the surface and electrical properties of Mg-doped, p-type AlxGa1−xN (0.06 < x < 0.17) layers. SPV measurements reveal significant deviation from previous SPV studies on p-GaN:Mg thin films and from the predictions of a thermionic model for the SPV behavior. In particular, the SPV of the p-AlGaN:Mg layers exhibited slower-than-expected transients under ultraviolet illumination and delayed restoration to the initial dark value. The slow transients and delayed restorations can be attributed to a defective surface region which interferes with normal thermionic processes. The top 45 nm of the p-AlGaN:Mg layer was etched using a reactive-ion etch which caused the SPV behavior to be substantially different. From this study, it can be concluded that a defective, near-surface region is inhibiting the change in positive surface charge by allowing tunneling or hopping conductivity of holes from the bulk to the surface, or by the trapping of electrons traveling to the surface by a high concentration of defects in the near-surface region. Etching removes the defective layer and reveals a region of presumably higher quality, as evidenced by substantial changes in the SPV behavior.

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

We evaluate the proposed resonant terahertz (THz) detectors on the basis of field-effect transistors (FETs) with split gates, electrically induced lateral p–n junctions, uniform graphene layer (GL) or perforated (in the p–n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET-detectors is associated with the rectification of the ac current across the lateral p–n junction enhanced by the excitation of bound plasmonic oscillations in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET- and PGL-FET-detector characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in the PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p–n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity.

Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

Thermionic emission theory and diffusion theory applied to CdTe PV devices

In this work, a comprehensive model that takes the phenomenon of carrier thermionic-emission within the frame work of a diffusion theory of current conducting into account in the type II hetero-junction CdTe solar cell is developed. According to this model, it is found that the total current flowing through the CdTe solar cell is limited by the thermionic process for very thin quasi-neutral regions and limited by the diffusion process for the reverse case. In future research of the CdTe solar cell, such an approach may enable the determination of the boundary conditions for all doping profiles and computation of the conversion efficiency, etc.

Quasi-photonic crystal effect of TiCl₃/electrolyte matrix in unipolar dye-absorber devices.

Effectiveness of TiCl3 pre- and post-treatments on dye-sensitized solar cells (DSCs) and interfacial charge-transfer properties were investigated. It was confirmed that a yield of current collection was strongly dependent on the position of the TiCl3/electrolyte matrix in the DSC configuration. The interfacial charge-transfer properties were studied using thermionic emission-diffusion process and electrochemical impedance spectroscopy analysis. The TiCl3/electrolyte matrix was considered to be a three-dimensional quasi-photonic crystal with a photonic band gap, which reinforces electric field and facilitates current collection from the TiCl3/electrolyte matrix to the FTO by accelerating electron motion, whereas the potential barrier blocks current collection from the TiO2 bulk region to the FTO and decreases current.

SeP hole injection layer for devices based on organic materials

Selenium : phosphour (SeP) thin films produced by thermal sublimation in vacuum are used as hole injection layers (HILs) in tris(8-hydroxyquinolinato) aluminum (Alq3) based devices. These devices are constructed in the sandwich structure substrate/HIL/Alq3/Al using three different substrate electrodes: fluorine doped tin oxide, Au, and indium tin oxide. The obtained electrical measurements indicate a better injection of positive charge carriers using the SeP layer. Syncrotron radiation x-ray photoelectron experiments allowed the determination of the work function of SeP. The obtained value (Φ = 5.6 eV) is close to the HOMO energy level of Alq3 and is consistent with the better positive charge injection. The thermionic injection process is suggested to be responsible for the charge injection from the different substrate electrodes into the SeP material. From transmittance measurements it was possible to calculate the refractive index and absorption coefficient as a function of wavelength, and to estimate the optical band gap (Eg = 1.9 eV). The latter and the measured work function were used in the construction of an energy level diagram of the SeP thin films used as HILs in organic devices. The hole injection efficiency of the produced films are compared with results using poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT : PSS).

Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy

We have systematically investigated relaxation of the surface photovoltage effect on the atomically controlled In/Si(111) surfaces with distinctive surface states and different amounts of the surface band bending. The temporal variations were traced in $real$ $time$ by time-resolved photoemission spectroscopy using soft x-ray synchrotron radiation. The relaxation is found to be temporally limited by two steps of the carrier transfer from the bulk to the surface: the tunneling process at a delay time $\ensuremath{\le}100$ ns and the thermionic process on the following time scale ($\ensuremath{\ge}100$ ns). Crossover of the two mechanisms can be understood by breakdown of the quantum tunneling regime by the increase in width of the space-charge layer during the relaxation.

Highly-efficient thermoelectronic conversion of solar energy and heat into electric power

Electric power may, in principle, be generated in a highly efficient manner from heat created by focused solar irradiation, chemical combustion, or nuclear decay by means of thermionic energy conversion. As the conversion efficiency of the thermionic process tends to be degraded by electron space charges, the efficiencies of thermionic generators have amounted to only a fraction of those fundamentally possible. We show that this space-charge problem can be resolved by shaping the electric potential distribution of the converter such that the static electron space-charge clouds are transformed into an output current. Although the technical development of such thermoelectronic generators will require further substantial efforts, we conclude that a highly efficient transformation of heat to electric power may well be achieved.

High-Aspect Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum-Well Solar Cells

The high aspect ratio (HAR) quantum well was proposed as a general design principle to overcome the tradeoff problem between light absorption and carrier collection in multiple quantum-well (MQW) solar cells. An HAR-MQW structure consists of thin wells and barriers, and its fundamental strategies are 1) thinner wells to enhance the light absorption for 1HH transition and make it possible to absorb the same amount of light with a thinner MQW region; 2) thinner barriers to allow the photogenerated carriers to be extracted by means of tunneling transport; and 3) deeper wells to obtain the same effective bandgap as thicker wells because of the stronger confinement. The enhanced absorption coefficient for HAR-MQW was proved by the measurement of both photoabsorption and the quantum efficiency at a sufficiently large reverse bias. Stronger photon absorption via 1HH transition was achieved with a smaller total thickness of the wells area. In the HAR-MQW cell, although the transport of the heavy holes was found to still be dominated by thermionic processes due to its large effective mass, tunneling of the electrons was clearly observed, and the extraction efficiency of photoexcited electrons remained much higher than that of a normal MQW cell at forward biases.

Transport mechanisms in MgO/GaAs(001) delta-doped junctions

The transport mechanisms through MgO ultrathin layers (0.5–1.2 nm) deposited on n-type doped GaAs(001) layers have been studied. In order to favor field emission (FE) across the junctions, a high doping concentration layer in vicinity of the semiconductor surfaces has been included. Varying doping concentration of the underlying GaAs layer we find that the dominant transport mechanism is either the variable-range hopping mechanism or a thermionic emission-like process instead of the FE process. The observation of such mechanisms can be explained by the fact that during the MgO deposition, defect states are introduced in the semiconductor band gap.

Electron transport mechanism of thermally oxidized ZnO gas sensors

ZnO gas sensor was fabricated by thermal oxidation of metallic Zn at different time periods. The sensors were characterized by I– V measurement with DC voltage, ranging from −2 to 2 volts, in both normal air and H 2 gas with concentration from 40 to 160 ppm. The transport mechanism of the carriers was found to be due to thermionic process through both the grain boundaries and the metal–semiconductor junctions. Resistance of the ZnO sensing film is independent of applied voltage in the range 0.5 V< V a<2 V; however, it is dependent on gas concentration, which makes it useful for gas sensing application.

Very low thermally induced tip expansion by vacuum ultraviolet irradiation in a scanning tunneling microscope junction

The thermal and photoelectronic processes induced when a vacuum ultraviolet (VUV) laser irradiates the junction of a scanning tunneling microscope (STM) are studied. This is performed by synchronizing the VUV laser shots with the STM scan signal. Compared to other wavelengths, the photoinduced thermal STM-tip expansion is not observed when the VUV radiation is freed from spurious emissions. Furthermore, we demonstrate that the purified VUV photoinduced transient signal detected in the tunnel current is entirely due to photoelectronic emission and not combined with thermionic processes. The ensuing photoelectron emission is shown to be independent of the tip-surface distance while varying linearly with the pure VUV laser intensity. These results illustrate a strong decoupling between phonons and photoelectrons which allows a very weak STM-tip expansion.