Thermal Rectification Research Articles

Multi-season passive variable insulation for buildings using magnetic thermal diodes

Multi-season passive variable insulation for buildings using magnetic thermal diodes

Reconfigurable, zero-energy, and wide-temperature loss-assisted thermal nonreciprocal metamaterials

Thermal nonreciprocity plays a vital role in chip heat dissipation, energy-saving design, and high-temperature hyperthermia, typically realized through the use of advanced metamaterials with nonlinear, advective, spatiotemporal, or gradient properties. However, challenges such as fixed structural designs with limited adjustability, high energy consumption, and a narrow operational temperature range remain prevalent. Here, a systematic framework is introduced to achieve reconfigurable, zero-energy, and wide-temperature thermal nonreciprocity by transforming wasteful heat loss into a valuable regulatory tool. Vertical slabs composed of natural bulk materials enable asymmetric heat loss through natural convection, disrupting the inversion symmetry of thermal conduction. The reconfigurability of this system stems from the ability to modify heat loss by adjusting thermal conductivity, size, placement, and quantity of the slabs. Moreover, this structure allows for precise control of zero-energy thermal nonreciprocity across a broad temperature spectrum, utilizing solely environmental temperature gradients without additional energy consumption. This research presents a different approach to achieving nonreciprocity, broadening the potential for nonreciprocal devices such as thermal diodes and topological edge states, and inspiring further exploration of nonreciprocity in other loss-based systems.

A graphite thermal Tesla valve driven by hydrodynamic phonon transport.

The Tesla valve benefits the rectification of fluid flow in microfluidic systems1-6 and inspires researchers to design modern solid-state electronic and thermal rectifiers referring to fluid-rectification mechanisms in a liquid-state context. In contrast to the rectification of fluids in microfluidic channels, the rectification of thermal phonons in micro-solid channels presents increased complexity owing to the lack of momentum-conserving collisions between phonons and the infrequent occurrence of liquid-like phonon flows. Recently, investigations and revelations of phonon hydrodynamics in graphitic materials7-10 have opened up new avenues for achieving thermal rectification. Here we demonstrate a phonon hydrodynamics approach to realize the rectification of heat conduction in isotopically enriched graphite crystals. We design a micrometre-scale Tesla valve within 90-nm-thick graphite and experimentally observe a discernible 15.2% difference in thermal conductivity between opposite directions at 45 K. This work marks an important step towards using collective phonon behaviour for thermal management in microscale and nanoscale electronic devices, paving the way for thermal rectification in solids.

Topological valley magnons and tunable thermal rectification in staggered Kagome ferromagnets

Topological valley magnons and tunable thermal rectification in staggered Kagome ferromagnets

Radiative thermal diode driven by the synergy between isotope engineering and lattice thermal expansion

Radiative thermal diode driven by the synergy between isotope engineering and lattice thermal expansion

Design and experimental analysis of a novel thermal diode with asymmetric heat transfer inspired by feather

To overcome the limitation of isotropic heat transfer of traditional heat pipes, a novel thermal diode with asymmetric flow resistance vapor channel inspired by the goose feather fibers is proposed in this study. The thermal performance of novel thermal diode is experimentally investigated. Results show that under the wide range of operating conditions, the thermal resistance of one end surpasses the thermal resistance of the other end, indicating its excellent thermal rectification capability. Under the filling ratio of 10 % and heating power of 7.5 W, the maximum thermal resistance of the thermal diode is 5.23 times the minimum thermal resistance, demonstrating excellent asymmetric heat transfer performance. Experimental results demonstrate that the novel thermal diode proposed in this study can easily change its unidirectional heat transfer direction by simply adjusting the internal filling ratio, showing significant application potential in the fields of thermal control system.

Ultrahigh Thermal Rectification at Small Temperature Difference Achieved by Near‐Field Thermal Photon Manipulation

AbstractThermal diodes, which allow heat to flow in a preferential direction, are an essential component of thermal circuitry and will find applications in many fields ranging from thermal photon controls to quantum information. The quality of a thermal diode is defined by the thermal rectification ratio (TRR). Here, an ultrahigh TRR exceeding 105 at a small temperature difference (1–5 K) is presented based on near‐field thermal photon (NFTP) manipulation, by utilizing asymmetric gap‐variated dual terminals based on graphene/Si heterostructures and materials with contrasting thermal expansion coefficients. Analyses of the photon tunneling probability show that the colossal TRR comes from coupled and decoupled graphene surface plasmon polaritons under opposite temperature biases, remaining robust across a wide operating temperature range. Further enhancement can be achieved by tuning the Fermi level of graphene. This work demonstrates the significance of asymmetry in NFTP manipulation for thermal diode performance, achieving an ultrahigh TRR, which is at least three orders higher than the state‐of‐the‐art structures at the same small temperature difference (1–5 K), and is comparable to state‐of‐the‐art electronic diodes.

Tunable thermoelectric superconducting heat pipe and diode

Abstract Efficient heat management at cryogenic temperatures is crucial for superconducting quantum technologies. This study demonstrates the controlled manipulation of the heat flow and heat rectification through an asymmetric superconducting tunnel junction. The system exhibits a non-reciprocal behavior, developing a thermoelectric regime exclusively when the electrode with the larger gap is heated. This feature significantly boosts thermal rectification effectively classifying the device as a heat diode. At the same time when operating as a thermoelectric engine, the same device also functions as a heat pipe, expelling heat from the cryogenic environment, minimizing losses at the cold terminal. This dual functionality is inherently passive, and the performance of the heat pipe and the heat diode can be finely adjusted by modifying the external electrical load.

Interfacial thermal resistance in stanene/ hexagonal boron nitride van der Waals heterostructures: A molecular dynamics study

Recently, the stanene (Sn)/hexagonal boron nitride (h-BN) van der Waals heterostructure (vdW) has garnered significant attention among the scientific community due to its distinctive electrical, optical, and thermal characteristics. Despite the promising potential of this heterostructure, the interfacial thermal resistance (ITR) between the Sn and h-BN layers remains unexplored. Understanding and modulating this ITR are essential steps towards harnessing the maximum potential of these materials in practical nanodevices. This study aims to investigate the interfacial thermal resistance (ITR) between the Sn and h-BN layers through the use of conventional molecular dynamics (MD) simulation. The transient pump–probe heating technique, commonly referred to as the Fast Pump Probe (FPP) approach, is utilized to analyze the ITR of the Sn/h-BN heterostructure. The estimated ITR value of a 30 × 10 nm2 Sn/h-BN nanosheet is found to be around ∼ 7 × 10-8 K.m2/W at room temperature. This study comprehensively investigates the impact of various internal and external parameters including nanosheet size, system temperature, contact pressure, vacancy concentration, and mechanical tensile strain (uniaxial and biaxial) on ITR, providing an extensive understanding of how these factors collectively affect the thermal resistance between Sn and h-BN layers. The simulationresults demonstrate a consistent decline in ITR by approximately ∼ 93 %, ∼45 %, ∼65 %, and ∼ 33 % with the increasing system size, temperature, contact pressure, and defect concentration, respectively. In contrast, increasing mechanical strain leads to a substantial enhancement in ITR, with a maximum increase of approximately ∼ 47 % under uniaxial tensile strain and almost ∼ 99 % under biaxial tensile strain. Moreover, the pristine Sn/h-BN heterostructure exhibits no significant thermal rectification effect. The Phonon Density of States (PDOS) profile of the Sn and h-BN layer is calculated to elucidate this underlying behavior of ITR. The PDOS analysis reveals that heat is transported from h-BN to the Sn layer through efficient coupling of low-frequency flexural phonons between these two materials. This work will provide both theoretical support and logical guidelines for modulating thermal resistance across diverse dissimilar material interfaces, which will be necessary for the development of advanced nanodevices used in next-generation nanoelectronics, nanophotonic, and optoelectronics applications.

Nonsymmetrical thermal conductivity along the director field in ferroelectric nematic liquid crystals.

The synthesis of ferroelectric nematic liquid crystals (FNLCs) concludes the long wait for their existence and potential usage in multiple liquid crystal based applications. In FNLCs, electric polarization in the nematic phase significantly decreases the switching time of in-on display pixels. In this article, we report the occurrence of translation symmetry breaking for heat propagation along the director field n[over ̂] in the ferroelectric nematic phase. Due to the C_{∞V} symmetry of such a phase and close similarity to the bent-core polar liquid crystal phase, a rank-3 tensor describes its scalar order parameter and algebraic deductions. The finite element simulations show the occurrence of the nonsymmetrical thermal conductivity along n[over ̂]. The preferential heat transport in FNLCs can allow them to work as an all-thermal monophase non-nanostructured single-material thermal rectifier. We expect that this study will contribute towards the FNLCs application as functional layers and inks.

Mechanism of interfacial thermal resistance variation in diamond/Cu/CNT tri-layer during thermal cycles

The multilayer materials in aerospace applications generally subject to thermal shock, which may significantly affect the interfacial thermal resistance (ITR) and cause serious overheating issues. Therefore, understanding the interfacial thermal transport under temperature shock is essential for effective thermal management in aerospace devices. In the present study, the variation in ITR within the diamond/Cu/carbon nanotube tri-layer after thermal cycles was investigated through non-equilibrium molecular dynamics (NEMD) simulations. We conducted four groups of investigations, exploring the impact of maximum cycle temperature, heating/cooling rates, number of cycles, and interfacial structure on ITR. The results demonstrate that while the matching degree of phonon density of states remains almost constant, the ITR varies significantly among all groups. The structural deformations and changes in lattice type can be observed in the Cu layer. Based on these findings, we proposed an “atomic distribution method” to elucidate the mechanism behind ITR variation, which was verified as applicable and precise. Additionally, the thermal rectification results demonstrate the significant effect of interfacial structure on the rectification coefficient, indicating that interfacial transport and lattice thermal conduction deserve more in-depth study in the future. This work provides a novel perspective on understanding thermal transport across the irregular and complex interfaces, which is significant for the thermal management in aerospace field.

Origins of Giant Anisotropic Phonon Heat Transfer in True‐1D van der Waals Material

AbstractThermal rectification devices, which facilitate preferential heat flow in a singular direction, stands as pivotal tools in the realization of solid‐state thermal circuits. 1D atomic chains, exhibit heightened thermal rectification efficiency owing to their exceptional directional heat conduction properties. These will find widespread utility in many applications, encompassing areas such as cooling, energy harvesting, and thermal isolation systems. However, unlike quasi‐1D materials, the intrinsic anisotropic heat transport in true‐1D atomic chains is yet to be systematically studied. Herein, the origins of the anisotropic heat transfer in three representative 1D structures (TaSe3 and BaTiS3 marked as quasi‐1D, MoI3 labeled as true‐1D) is first investigated by integrating a first‐principles density functional theory‐based framework of two‐channel heat conduction model. In contrast to quasi‐1D, MoI3 exhibits a giant anisotropy of lattice thermal conductivity (κL) in chain‐ and cross chain‐directions with a high ratio up to ≈20, which far exceeds the previous report for HfTe5 and ZrTe5. Such unique heat transfer reveals comprehensively by charge‐sharing and transferred charges, p‐‐d orbital hybridization and Young's modulus changes, induces an exceptionally large anisotropy. This study presents a high‐performance implementation of thermal rectification designed to regulate directional heat current, demonstrating its potential applicability in solid‐state thermal circuits.

Subdiffusive and superdiffusive phonon transport induced significant thermal rectification across a one-dimensional Kapitza interface

Anomalous heat conduction in low dimensional materials shows divergent thermal conductivity with increasing characteristic length, which brings many opportunities in thermal management applications and unexplored phonon transport mechanisms. The molecular heterojunctions, consisting of an interface that is formed by different lattices, exhibit unique physical properties especially thermal rectification phenomenon. In this work, we investigate the heat conduction across a one-dimensional heterojunction bridging a carbon nanotube (CNT) and a boron nitride nanotube (BNNT). The molecular dynamic (MD) simulation shows that the rectification ratio is as high as 8.9 in a 300-nm system at/above the room temperature, which is due to the asymmetric interfacial thermal conductance in the opposite directions of heat flow. The interfacial thermal conductance (G) obeys the length dependence of G ∝ Lβ, presenting a divergent and convergent behaviors of anomalous heat conduction that was only reported for homogeneous materials. By analyzing the length-dependent and temperature-dependent phonon density of state, this anomalous interfacial heat conduction can be explained by the Kapitza resistance model and the population of frequency-dependent phonons. Further calculation of mean square displacement of atoms validates the superdiffusion and subdiffusion behavior of the interfacial conductance. This result demonstrates the superb capability of the one-dimensional heterojunction to control phonon transport, which could be used as the basic element of high-efficient and intelligent thermal management devices.

Thermal Rectification Modulation of Parallel Multiple Carbon/Boron Nitride Heteronanotubes.

Thermal rectification (TR) efficiency has always been an important concern for thermal rectifiers. However, in practical terms, the amount of heat conduction is equally not negligible. To get high values on both of them, the carbon nanotube arrays with high thermal conductivity and large heat conduction areas were considered, along with carbon/boron nitride heteronanotubes (CBNNTs) with excellent TR property. In our work, multiple CBNNT models are constructed, and the TR ratio under different conditions is investigated using nonequilibrium molecular dynamics, with double CBNNTs (D-CBNNTs) aligned in parallel as the main analytical object. It is shown that weakening the intertube coupling is an available way to enhance the TR ratio, and adjusting the heteronanotube length and spacing can also effectively regulate the TR. In the process of changing the coupling coefficient, we analyzed both phonon changes and atomic vibrations and got a good correspondence, and the BN region is more variable in D-CBNNTs. In addition, the covariation of phonon localization and intertube phonon exchange with the coupling coefficient results in an invariant backward heat flux in the D-CBNNT. Furthermore, by adjusting the carbon proportion and lowering the coupling coefficient in the model, an excellent TR ratio in four CBNNTs was obtained and its heat flux is even larger than the value at a carbon percentage of 50% in larger coupling. We fully utilized the phonon density of states, phonon participation rate, and mean square displacement. Our results demonstrate the possibility of multiple CBNNTs as thermal rectifiers and provide theoretical guidance for heteronanotube arrays to be applied.

Thermal rectification in segmented Frenkel–Kontorova lattices with asymmetric next-nearest-neighbor interactions

In this work, we conduct an extensive study of the asymmetric heat flow, i.e. thermal rectification, present in the two-segment Frenkel Kontorova model with both nearest-neighbor (NN) and next-nearest-neighbor (NNN) interactions. We have considered systems with both high and low asymmetry and determined that, in the weak-coupling limit, thermal rectification is larger when NNN interactions are relevant. The behavior of the heat fluxes as a function of the coupling strength between the two segments is largely consistent with a well-defined rectification for larger system sizes. The local heat fluxes present a very different behavior for systems with high and low asymmetry. The results of this work may help in the design of molecular bridges, which have recently been shown to be able to function as thermal rectification devices.

Development of novel thermal diode inspired by the structure of venous valve

To increase the unidirectional heat transfer capability of a thermal diode, a novel thermal diode with unidirectional movable valves as vapor channel is proposed based on the structure of venous valves. The thermal performance of this bionic thermal diode was experimentally investigated under different working conditions. The results demonstrate that the bionic thermal diode exhibits a high thermal rectification ratio and strong stability. The best thermal rectification ratio is 10.79, with a forward thermal resistance of 0.26 °C/W and a reverse thermal resistance of 2.86 °C/W, at a heating power of 15 W and a filling ratio of 15 %. The temperature distribution indicated that, under the reverse heat transfer mode, the vapor was obstructed at the first valve, leading to the high thermal resistance of thermal diode. Additionally, the effect of inclined angle on the thermal performance of thermal diode was also investigated. This study provides a novel approach for the design of thermal diodes.

Thermal Rectification in Graphene-Boron Nitride Nanotube Hybrid Structures: An Independent Control Mechanism for Forward and Backward Heat Flux.

The weak van der Waals interactions in the out-of-plane direction result in markedly low thermal conductivity in one-dimensional (1D) and two-dimensional (2D) materials, which substantially restricts their applications. Developing three-dimensional (3D) columnar hybrid structures, featuring high thermal conductivity both within and beyond the plane, effectively addresses this challenge. This study investigated a 3D hybrid structure composed of graphene and boron nitride nanotubes (GR-BNNTs) using non-equilibrium molecular dynamics simulations. This approach allowed the examination of the formation mechanisms and key factors influencing thermal rectification (TR) in these materials. Our findings reveal a novel mechanism for independently regulating forward and backward heat fluxes in GR-BNNTs. By manipulating the thermal properties of the BNNTs and the graphene layer, the TR ratio can be controlled flexibly. Additionally, we identify specific strategies for independently adjusting the heat flux, such as altering the intercolumn distance of BNNTs, which impacts the backward flux merely, while applying strain to affect the forward flux merely. This research introduces a novel concept of independent regulation of forward and backward heat fluxes, providing significant insights into phonon thermal transport in 3D hybrid structures.

TRNSYS Simulation of a Bi-Functional Solar-Thermal-Energy-Storage-Assisted Heat Pump System

The escalating energy demands in buildings, particularly for heating and cooling demands met by heat pumps, have placed a growing stress on energy resources. The bi-functional thermal diode tank (BTDT) is proposed as thermal energy storage to improve the heating and cooling performances of heat pumps in both summer and winter. The BTDT is an insulated water tank with a gravity heat pipe (GHP), which can harvest and store heat passively from sun radiation and the external environment during the daytime. In summer, it harvests and stores cold energy from the air and night sky during the daytime. The performance of the BTDT-assisted heat pump (BTDT-HP) system in Adelaide, Australia, during the 2021–2022 summer and winter seasons was evaluated by conducting a TRNSYS simulation. This study revealed that the BTDT-HP system outperformed the reference ASHP system, where up to 8% energy in heating and 39.75% energy in cooling could be saved. An overall reduction in the energy consumption of 18.89% was achieved. Increasing the BTDT volume and GHP panel area enabled the tank to store more thermal and cold energy across the winter and summer seasons, thereby improving the system’s performance. The maximum ESPs were found to be 31.6% and 41.2% for heating and cooling for the study case under optimal conditions. When the GHP panel area was fixed at 15 m2, the BTDT volume should be at least 28 m3 for the BTDT-HP system, boasting cooling and heating capacities of 40 kW and 43.2 kW, to achieve positive energy savings.

One-Dimensional van der Waals Heterojunction Comprising Carbon Nanotube Half-Wrapped in Boron Nitride Nanotube: Deep Investigation of Thermal Rectification.

One-dimensional van der Waals (vdWs) heterostructures are celebrated for their exceptional thermal management capabilities, garnering significant research interest. Consequently, our research focused on the one-dimensional vdWs heterojunction comprising carbon nanotube half-wrapped in boron nitride nanotube (BNCNT), specifically their thermal rectification (TR) properties. We employed non-equilibrium molecular dynamics to explore the TR mechanism and assess the impacts of temperature, strain, and coupling strength on heat flux and TR ratio. Our findings reveal that the backward heat flux demonstrates greater atomic vibration instability, as indicated by mean square displacement (MSD), compared to forward heat flux. This instability leads to a higher concentration of localized phonons, thereby diminishing the backward heat flux and enhancing TR. Additionally, we utilized MSD to shed light on the negative differential thermal resistance phenomenon and the influence of stress on forward and backward heat fluxes. Remarkably, TR ratios reached 344% at 3% strain and 400% at -1% strain. Calculations of phonon density of states revealed a competitive mechanism between in-plane and out-of-plane phonons coupling in the inner carbon nanotube and an overlap degree of out-of-plane phonon spectra between the inner carbon nanotube and outer boron nitride nanotube. This accounts for the differing trends in forward and backward heat fluxes as coupling strength χ increases, with TR ratios exceeding 1000% at χ = 7.5. This study provides vital insights for advancing one-dimensional vdWs thermal rectifiers.

Near-field radiative thermal rectification assisted by Bi2Se3 sheet

The ability to control heat flux at the nanoscale opens up numerous exciting possibilities in modern electronics and the field of information processing. In this research, we propose a design with the focus on achieving efficient thermal rectification at moderate gap and relatively low temperature. This study centers on near-field thermal radiation between temperature dependent indium antimonide (InSb) and silicon carbide (3C-SiC) coated with bismuth selenide (Bi2Se3). Our investigation sheds light on the critical role played by the Bi2Se3 layer in enhancing various key parameters, including the net radiative flux, and thermal rectification efficiency (η). We achieved a substantial improvement in the η of a near-field radiative thermal rectifier (NFRTR) due to the presence of the Bi2Se3 sheet. This enhancement is contingent on factors such as the Fermi energy (Ef) of Bi2Se3, emitter temperature, and the vacuum gap (d). Our study culminated in the identification of an optimal design, achieving an impressive η of 75% at an emitter temperature (TH) of 350 K, with vacuum gap (d) set to 20 nm. Furthermore, increasing TH to 500 K resulted in even more promising outcomes, with the highest η reaching 93%. The need for operating the optimized device at moderate temperatures is to strike a balance between efficiency, safety, cost-effectiveness, and material compatibility. These findings represent a significant step forward in the development of efficient Bi2Se3-based NFRTRs, paving the way for future applications in thermal management, energy conversion systems, and thermal logic gates.