Thermal Conductivity Of Semiconductors Research Articles

Measurement of Thermal Properties of Semiconductor by Utilization of the Peltier Effect

A method of measuring Seebeck coefficient, electric conductivity, thermal diffusivity and thermal conductivity of semiconductors with a single apparatus was investigated. The feature of this method, improved from Harman's method is to measure the above properties separately and easily with a single apparatus. P-type and N-type semiconductor-rods are soldered and sandwiched between copper blocks. Thermal diffusivity and thermal conductivity were measured by heating the sample periodically by the Peltier effect. The principle of the above method was derived from the solution of the equation of heat conduction in semiconductor specimens. Seebeck coefficient and electric conductivity were measured from the steady state temperature and electric potential distribution in semiconductorrods. The dimensions of specimen and the measuring conditions for the measurement with an accuracy of 2% were discussed. Test results for Bi2Te3 by this method were shown to agree with these of Goldsmid, Harman and Nii.

Thermal conductivity of neutron-irradiated semiconductors in the low-temperature region

The status of the question of the effect of fast-neutron irradiation on the thermal conductivity and structure of semiconductors is examined. It is shown that the reduction in thermal conductivity is the more considerable, the lower the temperature of investigation and the higher the fast-neutron integral flux, though not above a certain limit for a given material. Previously proposed models of the thermal conductivity of semiconductors for the temperature region 6–300° K are briefly examined. The question of the effect of annealing on the stability of neutron-induced defects in germanium and silicon is given separate consideration.

Thermal Conductivity of Irradiated Semiconductors

ABSTRACTThe knowledge of thermal conductivity in semiconductors in relation to radiation damage effects is discussed. A thermal conductivity apparatus based on the non-equilibrium method and similar to that of Ioffe and Ioffe is described in some detail. For keeping the heat losses at a minimum, the relation between the radius and the thickness in case of a disc sample is given. The use of a comparator circuit for the measurement of small temperature differences, conducting the experiment in vacuum of the order of 10-5 mm. of Hg. are some of the refinements over that of Ioffe's.

Measurement of thermal conductivity of semiconductors at high temperatures

A brief description is given of absolute, comparative and Angstrom methods of measuring thermal conductivity at room temperature and above. Results from various sources on Si, Ge, InSb, InAs and some tellurides are summarized and discussed.

Thermal conductivity in semiconductors at high temperature

Thermal conductivity in semiconductors at high temperature

Resonance Transfer of Ionization Energy in Semiconductors

The thermal conductivity of semiconductor due to the resonance transfer of ionization energy of impurity state caused by the interelectronic interaction is calculated in each of three temperature ranges, the extrinsic, the exhaustion and the intrinsic ranges. The obtained conductivity increases exponentially with the temperature in the extrinsic range, but decreases in the exhaustion range. In the intrinsic range it increases again exponentially with the temperature when the temperature is lower than a critical point, but decreases as the temperature increases beyond the critical point. The experimental detection of our conductivity is possible under an appropriate condition in the intrinsic range, while impossible for almost all other cases.

Thermal conductivity in semiconductors

Thermal conductivity in semiconductors

Measurement of the Thermal Conductivity in Semiconductors

Measurement of the Thermal Conductivity in Semiconductors