Abstract
ABSTRACTThe knowledge of thermal conductivity in semiconductors in relation to radiation damage effects is discussed. A thermal conductivity apparatus based on the non-equilibrium method and similar to that of Ioffe and Ioffe is described in some detail. For keeping the heat losses at a minimum, the relation between the radius and the thickness in case of a disc sample is given. The use of a comparator circuit for the measurement of small temperature differences, conducting the experiment in vacuum of the order of 10-5 mm. of Hg. are some of the refinements over that of Ioffe's.
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