Thermal Conductivity Of Films Research Articles

Wafer-Level Simultaneous Film Thickness and Thermal Conductivity Characterizations for Bonded Si-on-Si

Wafer-Level Simultaneous Film Thickness and Thermal Conductivity Characterizations for Bonded Si-on-Si

Determination of thermal conductivity of phase pure 10H-SiC thin films by non-destructive Raman thermometry

The 10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device fabrication. Micro-Raman method serves as an important tool in this aspect and is known as Raman thermometry. It utilises a steady-state heat transfer model in a semi-infinite half space and provides for an effective technique to measure thermal conductivity of films as a function of film thickness and laser spot size. This method has two limiting conditions i.e. thick film limit and thin film limit. The limiting conditions of this model was explored by simulating the model for different film thicknesses at constant laser spot size. 10H SiC films of three different thicknesses i.e. 104, 135 and 156 nm were chosen to validate the thin film limiting condition. Thermal conductivity of these thin films varied from 0.60 – 4.80 (Wm−1K−1).

Dual-gradient MXene/AgNWs/Hollow-Fe3O4/CNF composite films for thermal management and electromagnetic shielding applications

With the increasing prevalence of electronic devices, there is a pressing need for composite films that offer both efficient thermal management and superior electromagnetic interference (EMI) shielding. To address this, we developed a novel composite film featuring a controllable conductive-magnetic dual-gradient structure, composed of cellulose nanofibers (CNF), MXene, silver nanowires (AgNWs), and hollow ferric oxide (Fe3O4). This film was fabricated using a straightforward, cost-effective layer-by-layer vacuum filtration method. Leveraging CNF as the matrix material endows the film with remarkable flexibility. The integration of 2D MXene, 1D AgNWs, and 0D hollow Fe3O4 significantly enhances the film's thermal conductivity through multidimensional particle interactions, achieving a maximum value of 2.92 W/mK. Additionally, the dual-gradient structure of the film-comprising a transition layer and a reflection layer-improves EMI shielding efficiency by balancing high EMI shielding effectiveness with low electromagnetic wave reflection. Specifically, for the dual-gradient configuration (MAF)-25-CNF, the absorption coefficient (A) of electromagnetic waves incident on the low conductivity side reaches 0.23, and the shielding effectiveness reaches 45.8 dB. These findings highlight the potential of MXene/AgNWs/Fe3O4/CNF composite films with a controllable conductive-magnetic dual-gradient structure for applications in electronics, electrical engineering, and wearable technologies.

(Invited) Electrochemical Tuning of Thermoelectric Performance of Carbon Nanotubes

One-dimensional materials have potential for high performance thermoelectric energy conversion. To experimentally understand how one-dimensional electronic structures can enhance thermoelectric performance, we have investigated the thermoelectric properties of single walled carbon nanotubes (SWCNTs) such as the relationships among electronic structures, the location of Fermi-level, Seebeck coefficients, and Power factor by combining thermoelectric measurements and electrolyte gating techniques. Through the studies, we have revealed unique properties such as violation of thermoelectric trade-off, isotropic Seebeck coefficient, and gigantic power factor [1]. However, in addition to that, it is important to understand how the carrier density also affects the thermal conductivity of the carbon nanotube thin films for correct evaluation of ZT value. Therefore, we have developed a measurement system which can evaluate thermal conductivity by tuning the location of Fermi-level through electrochemical gating techniques. Time-domain thermoreflectance (TDTR) measurement is one of methods which can evaluate the thin film thermal conductivity. In conventional TDTR system, Al is used as metal transducer, but Al is electrochemical reactive, and thus it is very difficult to combine the TDTR measurements with electrochemical techniques. To solve this problem, we developed a TDTR system using Au as a metal transducer [2]. By using Au as a metal transducer, we can evaluate both the electrical and thermal properties at the same time. By using system, we can evaluate thermal properties of thin films during electrolyte gating, and have evaluated how the change of charrier density affects the thermal conductivity of carbon nanotube thin films [3]. By preparing the aligned single-walled carbon nanotube thin film, we evaluated the ZT value in the perpendicular direction to the nanotube axis as a function of carrier density. The ZT value in this direction can be maximized to be 0.1 by tuning the Femi-level around 1st van hove singularity [4].

Thermal Conductivity and Flame Retardancy of Nacre-like Cellulose-based Composite Films Reinforced with Flame-retardant Functionalized Graphene Nanoplatelets by One-Step Ball Milling

Thermal Conductivity and Flame Retardancy of Nacre-like Cellulose-based Composite Films Reinforced with Flame-retardant Functionalized Graphene Nanoplatelets by One-Step Ball Milling

Enhancing Thermal Conductivity of Graphene Films via Secondary Graphitization under a Direct Current Arc

Enhancing Thermal Conductivity of Graphene Films via Secondary Graphitization under a Direct Current Arc

Thermal conductivity of epoxy resin films doped with a polythiophene/graphene complex or aluminum nitride

AbstractPolymer composites with thermal conductivity are attractive for heat dissipation in electronic devices. We prepared epoxy resin‐based composite films filled with polythiophene [poly(3‐hexylthiophene‐2,5‐diyl)] (P3HT)/graphene complex or aluminum nitride (AlN). The composite films were characterized by electron microscopic observation, thermogravimetric analysis, and thermal conductivity measurements. The addition of a small content of P3HT/graphene complex (<1 wt%) increased both the out‐of‐plane and in‐plane thermal conductivities of the epoxy resin. The addition of AlN also increased thermal conductivity, but ≥40 wt% was required to obtain thermal conductivity comparable with that of an epoxy resin film doped with 0.9 wt% P3HT/graphene complex. The present results illustrate the potential of P3HT/graphene complexes as fillers for improving the thermal conductivity of epoxy resins without affecting their insulating properties.Highlights Polythiophene/graphene fillers increased epoxy resin films' thermal conductivity. To raise the thermal conductivity of epoxy resin films high AlN content was needed. In‐plane/out‐of‐plane epoxy resin films' thermal conductivities were evaluated.

Thermal conductivity of nanocrystalline alumina films fabricated by aerosol deposition

Films fabricated by aerosol deposition (AD) are expected to be used as electrical insulating coatings. High thermal conductivity is required in addition to electrical insulation properties for electrical insulation substrate applications, but the thermal conductivity of AD films has not been reported. AD films are nanocrystalline films consisting of crystals several tens of nanometers in size, and it is unclear what effect the small particle size has on thermal conductivity. In this study, the thermal conductivity of an AD alumina film was measured by the light flash method as 15–31 W m−1 K−1 at room temperature and was large despite the particle size of several tens of nanometers. Analysis was performed using a model of grain size effects on thermal conductivity.

Thermal conductivities of nylon thin films measured by ISO 11357-8 method

Recently, based on conventional DSC apparatus, International Organization for Standardization (ISO) released ISO 11357-8 method for measuring the thermal conductivity of plastics. We followed its protocol to evaluate this new standard method and made DSC measurements on the thermal conductivities of Nylon 46, Nylon 66 and Nylon 610 thin films at the melting point of indium. We found the measurement results much smaller than the literature-reported values of parallel samples based on other standard methods as well as on our Flash DSC method. Significant deviation in the results of this standard DSC approach could be attributed to an overestimation of temperature gradient due to lateral heat dissipation upon slow heating. We discussed the possible mechanism to improve the measurement accuracy of this standard method.

Probing Thermal Transport on a Suspended Ti3C2Tx MXene Film via a Photothermally Actuated Resonator.

Two-dimensional (2D) Ti3C2Tx MXene materials show great potential in electrochemical and flexible sensors due to their high electrical conductivity, good chemical stability, and special delaminated structure. However, their thermal properties were rarely studied, which remarkably affect the stability and safety of various devices. Here, we fabricated a suspended MXene drum resonator photothermally driven by a sinusoidally modulated laser, measured the thermal time constant by demodulating the thermomechanical motion, and then calculated the thermal conductivity and thermal diffusivity of the MXene film. Experiments show the thermal conductivity of the film increases from 3.10 to 3.58 W/m·K while the thermal diffusivity from 1.06 × 10-6 to 1.22 × 10-6 m2/s when temperature increases from 300 to 360 K. We also confirm the film thermal conductivity is mainly contributed by phonon transport rather than electron transport. Furthermore, the relationship between the mechanical and thermal properties of the MXene films was disclosed. The thermal conductivity decreases when film strain increases, caused by enhanced phonon scattering and softening of high-frequency phonons. The measurements provide a noninvasive method to analyze the thermal characteristics of suspended MXene films, which can be further extended to the thermal properties of other 2D materials.

Dual-Effect Coupling for Superior Dielectric and Thermal Conductivity of Polyimide Composite Films Featuring "Crystal-Like Phase" Structure.

To match the increasing miniaturization and integration of electronic devices, higher requirements are put on the dielectric and thermal properties of the dielectrics to overcome the problems of delayed signal transmission and heat accumulation. Here, a 3D porous thermal conductivity network is successfully constructed inside the polyimide (PI) matrix by the combination of ionic liquids (IL) and calcium fluoride (CaF2 ) nanofillers, motivated by the bubble-hole forming orientation force. Benefiting from the 3D thermal network formed by IL as a porogenic template and "crystal-like phase" structures induced by CaF2 - polyamide acid charge transfer, IL-10 vol% CaF2 /PI porous film exhibits a low permittivity of 2.14 and a thermal conductivity of 7.22 W m-1 K-1 . This design strategy breaks the bottleneck that low permittivity and high thermal conductivity in microelectronic systems are difficult to be jointly controlled, and provides a feasible solution for the development of intelligent microelectronics.

Structure and Thermal Conductivity of Thin Films of the Si$${}_{{1-x}}$$Ge$${}_{{x}}$$ Alloy Formed by Electrochemical Deposition of Germanium into Porous Silicon

Structure and Thermal Conductivity of Thin Films of the Si$${}_{{1-x}}$$Ge$${}_{{x}}$$ Alloy Formed by Electrochemical Deposition of Germanium into Porous Silicon

Effects of thermal annealing on thermal conductivity of LPCVD silicon carbide thin films

The thermal conductivity (k) of polycrystalline SiC thin films is relevant for thermal management in emerging SiC applications like microelectromechanical and optoelectronic devices. In such films, k can be substantially reduced by microstructure features including grain boundaries, thin film surfaces, and porosity, although these microstructural effects can also be manipulated through thermal annealing. Here, we investigate these effects by using microfabricated suspended devices to measure the thermal conductivities of nine low-pressure chemical vapor deposition SiC films of varying thicknesses (from 120 to 300 nm) and annealing conditions (as-grown and annealed at 950 and 1100 °C for 2 h, and in one case 17 h). Fourier-transform infrared spectroscopy, x-ray diffraction spectra, and density measurements are also used to characterize the effects of annealing on the microstructure of selected samples. Compared to as-deposited films, annealing at 1100 °C typically increases the estimated grain size from 5.5 to 6.6 nm while decreasing the porosity from around 6.5% to practically fully dense. This corresponds to a 34% increase in the measured thin film thermal conductivity near room temperature from 5.8 to 7.8 W/m K. These thermal conductivity measurements show good agreement of better than 3% with fits using a simple theoretical model based on the kinetic theory combined with a Maxwell–Garnett porosity correction. Grain boundary scattering plays the dominant role in reducing the thermal conductivity of these films compared to bulk single-crystal values, while both grain size increase and porosity decrease play important roles in the partial k recovery of the films upon annealing. This work demonstrates the effects of modifying the microstructure and, thus, the thermal conductivity of SiC thin films by thermal annealing.

Simultaneous Determination of Thermal Conductivity and Heat Capacity in Thin Films with Picosecond Transient Thermoreflectance and Picosecond Laser Flash

ABSTRACT Combining the picosecond transient thermoreflectance (ps-TTR) and picosecond laser flash (ps-LF) techniques, we have developed a novel method to simultaneously measure the thermal effusivity and the thermal diffusivity of metal thin films and determine the thermal conductivity () and the heat capacity () altogether. In order to validate our approach and evaluate the uncertainties, we analyzed five different metal films (Al, Cr, Ni, Pt, and Ti) with thicknesses ranging from 297 nm to 1.2 µm. Our results on thermal transport properties and heat capacity are consistent with reference values, with the uncertainties for the thermal conductivity and the heat capacity measurements below 25% and 15%, respectively. Compared with the ps-TTR technique alone, the combined approach substantially lowers the uncertainty of the thermal conductivity measurement. Uncertainty analyses on various materials show that this combined approach is capable of measuring most of the materials with a wide range of thicknesses, including those with low thermal conductivity (e.g., mica) down to thicknesses as small as 60 nm and ultrahigh thermal conductivity materials (such as cubic BAs) down to 1400 nm. Simultaneous measurement of thermal conductivity and heat capacity enables exploration of the thermal physical behavior of materials under various thermodynamic and mechanical perturbations, with potential applications in thermal management materials, solid-state phase transitions, and beyond.

Pulsed thermoreflectance imaging for thermophysical properties measurement of GaN epitaxial heterostructures.

Multilayer heterostructures composed of a substrate and an epitaxial film are widely utilized in advanced electronic devices. However, thermal bottlenecks constrain their performance and reliability, and efficient approaches to comprehensively measure the thermophysical properties of heterostructures are urgently needed. In this work, a pulsed thermoreflectance imaging (PTI) method is proposed, which combines the transient temperature mapping of thermoreflectance thermal imaging with transient pulsed excitation. By executing merely three transient tests, six thermophysical properties, including the film thermal conductivity and specific heat capacity, the substrate thermal conductivity and specific heat capacity, the film-substrate thermal boundary resistance, and the equivalent thermal conductivity of the insulating layer, can be simultaneously measured in a heterostructure sample. The proposed method applies a pulsed current excitation to a metal heater line on the sample surface and utilizes the thermoreflectance thermal imaging system to measure the temperature of different spatial regions on the sample surface at different time windows. The temporal and spatial variation information of the temperature field is then extracted and combined with finite element method inversion calculation to obtain the thermophysical properties of heterostructures. To validate the accuracy and reliability of this method, we conducted measurements on a GaN-on-SiC heterostructure sample and obtained thermophysical properties consistent with the representative literature data that have previously been reported. The proposed PTI method, characterized by its high sensitivity, demonstrates good efficiency and reliability in conducting comprehensive thermophysical property characterization of GaN epitaxial heterostructures.

Simultaneously Enhanced In-Plane and Out-of-Plane Thermal Conductivity of a PI Composite Film by Tetraneedle-like ZnO Whiskers and BN Nanosheets

Simultaneously Enhanced In-Plane and Out-of-Plane Thermal Conductivity of a PI Composite Film by Tetraneedle-like ZnO Whiskers and BN Nanosheets

Enhanced In-Plane Thermal Conductivity and Mechanical Strength of Flexible Films by Aligning and Interconnecting Si3N4 Nanowires.

As the rapid development of advanced foldable electronic devices, flexible and insulating composite films with ultra-high in-plane thermal conductivity have received increasing attention as thermal management materials. Silicon nitride nanowires (Si3N4NWs) have been considered as promising fillers for preparing anisotropic thermally conductive composite films due to their extremely high thermal conductivity, low dielectric properties, and excellent mechanical properties. However, an efficient approach to synthesize Si3N4NWs in a large scale still need to be explored. In this work, large quantities of Si3N4NWs were successfully prepared using a modified CRN method, presenting the advantages of high aspect ratio, high purity, and easy collection. On the basis, the super-flexible PVA/Si3N4NWs composite films were further prepared with the assistance of vacuum filtration method. Due to the highly oriented Si3N4NWs interconnected to form a complete phonon transport network in the horizontal direction, the composite films exhibited a high in-plane thermal conductivity of 15.4 W·m-1·K-1. The enhancement effect of Si3N4NWs on the composite thermal conductivity was further demonstrated by the actual heat transfer process and finite element simulations. More significantly, the Si3N4NWs enabled the composite film presenting good thermal stability, high electrical insulation, and excellent mechanical strength, which was beneficial for thermal management applications in modern electronic devices.

Thermal Conductivity of Polyvinylidene Fluoride Films with a Multi-Scale Framework.

The orientation of amorphous regions in pure polymers has been noted to be critical to the enhancement of thermal conductivity (TC), but the available reports are still rather few. Here, we propose to prepare a polyvinylidene fluoride (PVDF) film with a multi-scale framework by introducing anisotropic amorphous nanophases in the form of cross-planar alignments among the in-planar oriented extended-chain crystals (ECCs) lamellae, which show an enhanced TC of 1.99 Wm-1 K-1 in the through-plane direction (K⟂) and 4.35 Wm-1 K-1 in the in-plane direction (K∥). Structural characterization determination using scanning electron microscopy and high-resolution synchrotron X-ray scattering showed that shrinking the dimension of the amorphous nanophases can effectively reduce entanglement and lead to alignments formation. Moreover, the thermal anisotropy of the amorphous region is quantitatively discussed with the aid of the two-phase model. Superior thermal dissipation performances are intuitively displayed by means of finite element numerical analysis and heat exchanger applications. Moreover, such unique multi-scale architecture also results in significant benefit in the improvement of dimensional stability and thermal stability. This paper provides a reasonable solution for fabricating inexpensive thermal conducting polymer films from the perspective of practical applications.

Optical triggering of a metal-insulator transition in neodymium nickelate films

We have studied photostimulated changes in the electrical resistivity of thin epitaxial films of neodymium nickelate NdNiO3 around its sharp metal-to-insulator transition. It is found that intense light irradiation strongly affects the film resistivity below the transition temperature, where the resistivity is repeatedly switched from high insulating values into low metal-phase levels. By varying the irradiation and thermal conditions, we establish that this strong photoresistive effect is likely caused by light-absorption induced heating rather than electronic excitations. Further analysis of the temperature-dependent resistivity predicts a significant drop in the film thermal conductivity at the metal-to-insulator transition. The simultaneous abrupt change in two physical parameters: electrical resistivity and thermal conductivity, is responsible for a considerable magnitude of the observed photoresistive effect. This effect can be utilized in novel electronics applications, such as thin-film photodetectors or photoswitches.

Вплив поздовжньої і поперечної теплопровідності міжфазних щілин на ефективні параметри біматеріалу

The effective parameters of the bi-material with a periodic system of interfacial cracks are studied, taking into account their longitudinal and transverse thermal conductivity. The bi-material is subjected to tensile forces and uniform heat flow. The transverse and longitudinal thermal conductivity of the cracks is taken into account by the thermal resistance of the filler and the thermal conductivity of the surface films, respectively. The thermal resistance of the filler is directly proportional to the opening of the cracks and inversely proportional to the thermal conductivity of the filler. Thermal conductivity of surface films does not change under the influence of load. The thermo-elastic problem is reduced to nonlinear systems of singular integro-differential equations for an opening cracks and a temperature jump between the cracks faces. An analytical-numerical iterative procedure for solving this system is proposed. Based on the obtained solution, the effective temperature jump and the effective thermal resistance of the bi-material are determined. The dependences of the effective parameters of the bi-material on the applied load and thermal conductivity coefficients of the filler and the surface films of the cracks are analyzed.