Thermal Conductance Research Articles

Characterization of Transition Edge Sensors for Decay Energy Spectrometry

By using a superconducting transition edge sensor (TES) to measure the thermal energy of individual decay events with high energy resolution, decay energy spectrometry provides a unique fingerprint to identify each radionuclide in a sample. The proposed measurement requires optimizing the thermal parameters of the detector for use with 5 MeV scale energy deposited by alpha decay of the sample radionuclides. The thermal performance of deep-etched silicon TES chips is examined with the use of an onboard resistive heater. With known heater power and bath temperature, the thermal conductance, heat capacity, and frame temperature are calculated and compared to theory.

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: Effect of electron cooling in channel and at side contacts

We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers. Such bolometers use the thermionic emission of the hot electrons heated by incident-modulated THz radiation. The hot electrons transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency.

Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges.

In this paper, we present a study of the thermal transport of epitaxial bilayer graphene microbridges. The thermal conductance of three graphene microbridges with different lengths was measured at different temperatures using Johnson noise thermometry. We find that with the decrease of the temperature, the thermal transport in the graphene microbridges switches from electron-phonon coupling to electron diffusion, and the switching temperature is dependent on the length of the microbridge, which is in good agreement with the simulation based on a distributed hot-spot model. Moreover, the electron-phonon thermal conductance has a temperature power law of T3 as predicted for pristine graphene and the electron-phonon coupling coefficient σep is found to be approximately 0.18 W/(m2 K4), corresponding to a deformation potential D of 55 eV. In addition, the electron diffusion in the graphene microbridges adheres to the Wiedemann-Franz law, requiring no corrections to the Lorentz number.

Unraveling the Regimes of Interfacial Thermal Conductance at a Solid/Liquid Interface.

The interfacial thermal conductance at a solid/liquid interface (G) exhibits an exponential-to-linear crossover with increasing solid/liquid interaction strength, previously attributed to the relative strength of solid/liquid to liquid/liquid interactions. Instead, using a simple Lennard-Jones setup, our molecular simulations reveal that this crossover occurs due to the onset of solidification in the interfacial liquid at high solid/liquid interaction strengths. This solidification subsequently influences interfacial energy transport, leading to the crossover in G. We use the overlap between the spectrally decomposed heat fluxes of the interfacial solid and liquid to pinpoint when "solid-like energy transport" within the interfacial liquid emerges. We also propose a novel decomposition of G into (i) the conductance right at the solid/liquid interface and (ii) the conductance of the nanoscale interfacial liquid region. We demonstrate that the rise of solid-like energy transport within the interfacial liquid influences the relative magnitude of these conductances, which in turn dictates when the crossover occurs. Our results can aid engineers in optimizing G at realistic interfaces, critical to designing effective cooling solutions for electronics among other applications.

Enhancing thermal conductance between graphene and epoxy interfaces through non-covalent cation-π interactions

Although graphene has high thermal conductivity, its application in thermal management remains challenging because of the large interfacial thermal resistance between graphene and adjacent materials. This work demonstrates that non-covalent cationic-π interaction can significantly improve the thermal conductance between graphene and substrate interfaces. Cationic polyacrylamide (CPAM) bridges substrate and graphene with hydrogen bonding and cation-π interaction, respectively. The cation-π interaction between graphene and CPAM is confirmed by Raman, UV–Vis and NMR spectroscopy. The results show that CPAM increases the interfacial adhesion of graphene/epoxy from 18.7 ± 2.2 mN to 37.4 ± 7.6 mN (100.0 % improvement) and improves the interfacial thermal conductivity (ITC) from 22 ± 2 MW/m2K to 51 ± 5 MW/m2K (131.8 % improvement). Enhancing the ITC of graphene/epoxy by introducing CPAM assembled layer has advantages over covalent modifications because it provides a similar level of ITC improvement rate, but has little effect on the intrinsic thermal conductivity of graphene. Finally, it is demonstrated that the sample with graphene/cationic polyelectrolyte/substrate structure exhibits great potential for applications in the area of thermal management and printed circuit boards.

The mechanism by which thermal coupling leads to an asymptotic maldistribution stability boundary for flow boiling in parallel channels

Phase change heat transfer processes are attractive for the efficient thermal management of advanced semiconductor devices, with flow boiling in parallel microchannel heat sinks being one promising solution. However, there are several implementation challenges associated with two-phase flow in parallel microchannels, particularly flow maldistribution, which can adversely affect performance and reliability. Two-phase flow models can be useful in predicting and understanding the instability mechanisms that leads to maldistribution, such that parametric performance trends and safe regions of operation can be identified. Channel-to-channel thermal coupling has been shown to alleviate maldistribution, but it is not yet understood why this effect is limited to some critical lateral thermal conductance above which there is no further benefit. In the current work, a two-phase flow model with a lumped thermal capacitance representation of the heat sink wall is developed to identify the mechanism for this asymptotic maldistribution stability boundary for thermally coupled microchannels. The lumped model allows the nature of stability boundary to be explained via a scaling analysis of the eigenvalues. In such systems, it is identified that a single eigenvalue determines the occurrence of flow maldistribution. Scaling analysis shows that, for small values of thermal conductance, this eigenvalue becomes a quadratic function of thermal coupling, which enhances the stability of microchannels and moves the stability boundary. However, for large values of thermal conductance, the eigenvalue is dependent only on the fluid properties, leading to a limit at which thermal coupling can no further improve stability or affect the stability boundary. The lumped model developed in this work enables mechanistic understanding of the role of channel-to-channel thermal coupling on mitigating flow maldistribution and therefore may offer important guidance on the design of flow boiling systems and heat sinks.

One Stone Two Birds: Anomalously Enhancing the Cross‐Plane and In‐Plane Heat Transfer in 2D/3D Heterostructures by Defects Engineering

AbstractThis study addresses a crucial challenge in two‐dimensional (2D) material‐based electronic devices—inefficient heat dissipation across the van der Waals (vdW) interface connecting the 2D material to its three‐dimensional (3D) substrate. The objective is to enhance the interfacial thermal conductance (ITC) of 2D/3D heterostructures without compromising the intrinsic thermal conductivities (κ) of 2D materials. Using 2D‐MoS2/3D‐GaN as an example, a novel strategy to enhance both the ITC across 2D/3D interface and κ of 2D material is proposed by introducing a controlled concentration (ρ) of vacancy defects to substrate's bottom surface. Molecular dynamics simulations demonstrate a notable 2.1‐fold higher ITC of MoS2/GaN at ρ = 4% compared to the no‐defective counterpart, along with an impressive 56% enhancement in κ of MoS2 compared to the conventional upper surface modification approaches. Phonon dynamics analysis attributes the ITC enhancement to increased phonon coupling between MoS2 and GaN, resulting from polarization conversion and hybridization of phonons at the defective surface. Spectral energy density analysis affirms that the improved κ of MoS2 directly results from the proposed strategy, effectively reducing phonon scattering at the interface. This work provides an effective approach for enhancing heat transfer in 2D/3D vdW heterostructures, promisingly advancing electronics’ heat dissipation.

Comparative analysis of thermal interface materials for effective thermal management of electronic devices

ABSTRACT Thermal interface materials (TIM) employed to electronic devices enhances interfacial heat dissipation and thermal contact conductance (TCC). This study compares the performance of TIMs (silicon grease, phase change material (PCM) and composite PCM) on a copper-aluminum contact pair under varying range of contact pressure (0.1 to 0.4 MPa) and interface temperature (35 to 65 °C). Composite PCM is prepared by mixing aluminum powder to PCM in different mass concentrations (4, 8 and 25 wt.%). Result shows that addition of aluminum powder > 8 wt.% to PCM reduces its heat storage capacity and delays heat transfer. Moreover, TCC with silicon grease outperforms PCM by 108%, while CPCM (8 wt. %) is 144% more efficient but costlier than others.

Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides

The perovskite oxides ReNiO3 (Re = rare-earth elements) are promising functional materials due to their strongly correlated electrons. Except for the well-known intrinsic metal-insulating transition in these materials, recent progresses have proved that protonation of ReNiO3 can bring about interesting Mott transition in this series. To date, in these protonated species (H-ReNiO3), huge resistance switching, fast ionic diffusion, and their applications as an iontronic transistor, memristor, and fuel cell are reported. In this work, the thermal conductivities of H-ReNiO3 (Re = La, Nd, Sm, and Eu) epitaxial thin films are investigated. The protonation-induced Mott transition can effectively modulate the electronic thermal conductivity while the lattice thermal conductance is less affected. Hence, at room temperature, the metallic LaNiO3 and NdNiO3 exhibit reversible wide thermal conductivity modulation, in ranges of 2.6–12.0 and 1.6–8.0 W m−1 K−1, respectively. These values are much larger than other thermal regulation materials based on transition metal oxides. Thus, our work reveals the great potential of ReNiO3 being applied as a thermal-regulating material. The fast ionic diffusion in H-ReNiO3 also guarantees that a fast response and wide-range thermal transistor can be realized by H-LaNiO3 and H-NdNiO3 in the future.

Experimental Study of Thermal Contacts for the Enhancement of Interfacial Heat Transfer

Abstract The thermal management in high-performance electronic devices demands the enhanced rate of heat dissipation for controlling operational temperatures and achieving optimal functioning. There are many interfaces in the heat dissipation circuit where thermal interface materials are applied to enhance heat transfer rate. An experimental investigation is presented on metallic contacts to study the interfacial heat transfer with and without a thermal interface material. Thermal contact conductance is known to be an important parameter estimated for the analysis of interfacial heat transfer across the thermal contacts. Therefore, the thermal contact conductance has been evaluated to identify an effective thermal interface material suitable for the present range of contact pressure and heat flux conditions. Silicone grease is a widely used thermal interface material in electronic industry. Thus, commercially available Silicone grease is evaluated in different boundary line thicknesses for a range of contact pressure and mean interface temperatures. Further, a novel composite thermal paste has been prepared by mixing cupric oxide nanopowder and Silicone grease in three different mass concentrations. Eventually, the results for the new thermal paste showed improved thermal contact conductance and lower interfacial temperature drops as compared to Silicone grease for similar test conditions with few limitations.

Enhanced Far-Field Thermal Radiation through a Polaritonic Waveguide.

We experimentally demonstrate the enhancement of the far-field thermal radiation between two nonabsorbent Si microplates coated with energy-absorbent silicon dioxide (SiO_{2}) nanolayers supporting the propagation of surface phonon polaritons. By measuring the radiative thermal conductance between two coated Si plates, we find that its values are twice those obtained without the SiO_{2} coating. This twofold increase results from the hybridization of polaritons with guided modes inside Si and is well predicted by fluctuational electrodynamics and an analytical model based on a two-dimensional density of polariton states. These findings could be applied to thermal management in microelectronics, silicon photonics, energy conversion, atmospheric sciences, and astrophysics.

Comprehensive assessment of thermoelectric properties in modules: Time-domain impedance spectroscopy considering heat leakage via attached lead wires

This study aimed to determine various thermoelectric properties, including the dimensionless figure of merit (zT0), resistivity (ρTE), thermal conductivity (κTE), and Seebeck coefficient (S), using a combination of 3ω and time-domain impedance spectroscopy (TDIS) methods for a thermoelectric module at absolute temperature (T0). The effective dimensionless figure of merit (zT0,eff), influenced by heat leakage through attached lead wires, was quantitatively and qualitatively assessed based on the TDIS method. The results demonstrated that zT0,eff/zT0 can be expressed as the ratio between the thermal conductance of the attached thermoelectric element and the lead wire. Thus, by considering heat leakage through the lead wire, the TDIS method can estimate not only zT0 and ρTE but also κTE and S after measuring the lead wire's thermal conductivity using the 3ω method. The study utilized a commercial Π-shaped bismuth-telluride-based thermoelectric module and derived representative values for its elements. zT0, ρTE, κTE, and |S| at 300 K were 0.871, 10.15 μΩ m, 1.71 W/mK, and 224 μV/K, respectively, consistent with previous reports on representative bismuth-telluride-based materials. In conclusion, the combination of the 3ω and TDIS methods is useful for determining all thermoelectric properties, considering heat leakage through attached lead wires.

Thermoelectric properties of undoped and Bi-doped GeS monolayers: A first-principles study

Different from the extensive experimental investigations into the thermoelectric (TE) properties of the bulk IV–VI compounds, less attention has been paid to the TE properties of the monolayer IV–VI compounds. Here, we consider the TE transport properties including the Seebeck coefficient, electronic conductance, thermal conductance, power factor, and figure of merit ZT of the undoped and Bi-doped GeS monolayers. Our results show that for both the undoped and Bi-doped monolayers the anisotropy is widely observed in all their TE properties, and the maximum ZT at a certain temperature along the armchair direction is much greater than that along the zigzag direction. Moreover, Bi doping can lead to an increase of the maximum ZT, and there are more ZT peaks appearing near the zero chemical potential. This indicates that the Bi-doped GeS monolayer can work as a TE material at a lower bias voltage, and especially along the armchair direction it can work at zero bias voltage, which obviously strengthens the reliability of the TE devices. As the temperature increases, the maximum ZT will be uniformally increased along the armchair and zigzag directions for both the undoped and Bi-doped GeS monolayers. In the temperature scope from 300 to 800 K, the maximum ZT along the armchair direction of the Bi-doped GeS monolayer will increase from 3.39 to 4.85, which indicates that this Bi-doped GeS monolayer is a promising TE material in a wide-temperature zone. As an application, we have designed the GeS-based TE couples and found that their efficiencies can be greater than 27% at large temperature differences. This research should be an important guidance for designing a low-voltage, wide-temperature-scope, and high-stability TE device.

Experimental setup for thermal measurements at the nanoscale using a SThM probe with niobium nitride thermometer.

Scanning Thermal Microscopy (SThM) has become an important measurement technique for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM) probe and a very sensitive resistive thermometer; the thermometer being located at the apex of the probe tip allows for the mapping of temperature or thermal properties of nanostructured materials with very high spatial resolution. The high interest of the SThM technique in the field of thermal nanoscience currently suffers from a low temperature sensitivity despite its high spatial resolution. To address this challenge, we developed a high vacuum-based AFM system hosting a highly sensitive niobium nitride (NbN) SThM probe to demonstrate its unique performance. As a proof of concept, we utilized this custom-built system to carry out thermal measurements using the 3ω method. By measuring the V3ω voltage on the NbN resistive thermometer under vacuum conditions, we were able to determine the SThM probe's thermal conductance and thermal time constant. The performance of the probe is demonstrated by performing thermal measurements in-contact with a sapphire sample.

Polydimethylsiloxane (PDMS)-assisted non-destructive transient thermoreflectance characterizations.

The conventional pump-probe thermoreflectance (pump-probe TR) techniques are routinely performed on a thin (typically <100nm) metal transducer deposited on samples, ensuring the most fundamental principle of thermoreflectance: the reflectance change (∆R/R) of the sample surface is directly and linearly related to the temperature change (∆T) within a finite temperature range. However, general metal coating methods may damage the sample by forming a mixed layer with the sample. In this article, we present a non-destructive pump-probe transient thermoreflectance (TTR) characterization using the polydimethylsiloxane (PDMS)-assisted metal transfer technique. Our method utilizes PDMS dry transfer to transfer common transducer metals (Au and Al) to the target substrate. This method effectively avoids impurities and damage to the sample. In particular, we have utilized Au as a transition layer to study the application of Al transfer in TTR measurements. The substrate thermal conductivity measurement results show that they can all be used for TTR measurement, and the thermal boundary conductance results show that the transferred metals have low bonding to the substrate. In addition, Al/Au can be transferred over a large area at room temperature compared to Au. After measurement, the samples can be restored to their original state by a simple cleaning method. This method provides a simple and reliable way to characterize samples without metal coating for TTR.

The study of active gas-gap heat switch using carbon nanotubes as the adsorption material

Heat switches are widely used in cryogenic systems and play an important role in controlling thermodynamic cycles and accelerating the cooling of cryogenic components, etc. Among them, the active gas-gap heat switch, as one of the mainstream heat switches, mostly uses activated carbon as the adsorbent. It desorbs/adsorbs helium by heating/cooling the activated carbon to realize the ON/OFF state. Normally, a short response time, which is related to the adsorption properties of the materials and the heating method of the adsorption bed, is desired. In order to further shorten the response time and improve the performance of the heat switch, a 3He active gas-gap heat switch using carbon nanotubes as the adsorption material was investigated. About 0.06 mW/K OFF-state conductance and 60 mW/K ON-state conductance were obtained at 4 K. The heat switch switched on within 35 s when 1.6 mW heating power was applied to the adsorption bed, and it took about 400 s at 4 K to reduce thermal conductance to 1/10 of ON-state conductance when the heating of the adsorption bed was stopped.

Tuning hydrogen boil-off via inert gas insulation purge in a vapor cooled shielded fuel tank

Vapor cooled polymer composite tanks for liquid hydrogen are a newopportunity for light weight power-system integration into unmanned aerial vehicles. Vapor shielding has the ancillary benefit of pre-conditioning the hydrogen for use by a fuel cell. However, the mass flow rate required by a fuel cell should be matched by the natural boil-off rate of the tank. With limited ability to vary insulation thicknesses, the challenge becomes satisfying the fuel cell consumption in UAVs at different mass flow rates when at varying stages of flight from take-off, cruise, and landing. This paper provides experimental measurements of mass flow rate of hydrogen from the tank considering batch purging with helium or argon in the vapor cool shielded insulation layer. A 5-shell vapor cooled shielded tank is used with two layers of insulation including aerogel, helium or argon, and two vapor channels. A more complete understanding of system-level thermal conductance is determined by mass flow of hydrogen leaving the tank during hypothetical flight.

Oscillating thermal switch using electrostatic forces

Thermal control devices such as thermal switches, thermal diodes, thermal regulators and thermal capacitors can control the intensity and direction of heat flow, which has proven useful in various thermal management applications. Their operation is analogous to that of their electrical counterparts, where temperature differences correspond to voltage differences and heat flow corresponds to electric current. Here we design and fabricate a thermal switch that controls the heat flow from the heat source by changing the thermal conductance when switching ON and OFF. The thermal switch uses electrostatic forces for actuation and makes thermal contact between the heat source and the heat sink when in the ON state, and breaks contact when in the OFF state. The thermal switch is constructed using the commercially available materials. The heat sink and heat source are made of silicon, and the active part of the heat switch is a flexible gadolinium sheet with a thickness of 161 µm. The proof-of-concept device was evaluated for a magnetocaloric application; however, the proposed thermal switch can be used in any thermal circuit for fast thermal regulation and advanced thermal control.

Neon pulsating heat pipe with innovative flexible evaporator to facilitate cryocooling of superconducting devices

Cryogenic pulsating heat pipes (PHP), also termed oscillating heat pipes, are passive thermal links that transfer heat by oscillatory motion of two-phase cryogen confined in serpentine-shaped capillary tubes. It is composed of three sections, namely, the condenser (cold sink), the evaporator (heat source) and the adiabatic part that can range from several centimetres to few metres. In spite of longer lengths, PHPs hold an advantage that their weight does not radically increase in comparison to counterparts like metallic thermal straps. The aim is to present cryogenic PHPs as one of the potential thermal links aiding in distant cooling of superconducting devices from active cryocoolers. A 0.4 m long neon PHP with 1 mm capillary tube diameter has been recently developed characterized by one of the highest thermal conductance reported till date both in vertical and horizontal orientation. An innovative modification in the construction of PHP evaporator is showcased in this article. This would considerably enhance the flexibility of PHPs in terms of their employment geometrically within the targeted application. Pilot experimental results for neon PHP coupled with the altered evaporator is presented for heat load up to 18 W.

Elastic and inelastic phonon scattering effects on thermal conductance across Au/graphene/Au interface

Heat dissipation from graphene devices is predominantly limited by heat conduction across the metal contacts with complex phonon scattering. In this work, the effects of elastic and inelastic phonon scattering on the interfacial thermal conductance (ITC) across the Au/graphene/Au interface are studied using both atomistic Green's function (AGF) and reverse non-equilibrium molecular dynamics methods. The results show that the contribution of inelastic phonon scattering to the ITC increases with the enhancement of interfacial bonding strength. Moreover, the overlap of the vibrational density of states across the interface shows that the coupling between the Au layer (adjacent to the Au/graphene interface) and graphene's out-of-plane modes plays the dominant role in ITC across the Au/graphene interface. By comparing the transmission functions calculated with AGF and spectral heat current decomposition methods, the inelastic phonon scattering process facilitates phonon transmission in the lower and higher frequency range but hinders phonon transmission in the intermediate frequency range. It is expected that this study can contribute to a better understanding of the thermal conduction mechanism across the metal/graphene interface, providing guidance for thermal management and heat conduction optimization of graphene in microelectronic devices.