In this study, a three-dimensional (3-D) transistor with 1-µm-high multi-beams is proposed. This is named corrugated-channel transistor (CCT) after its “corrugated structure of channels”. To realize the corrugated structure, an orientation dependent etching (ODE) of tetra methyl ammonium hydroxide (TMAH) is used. Considering its etching mechanism, the roughness of the vertical channel region is expected to be much smaller and a higher channel aspect ratio has been realized compared with those in the case of conventional dry etching. Utilizing this TMAH etching, CCT having a comb-shaped channel has been successfully developed featuring strongly area-efficient performance.
Read full abstract