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Abstract
The bond interface in silicon microsystems is sensitive to thesubjection to wet anisotropic etchants. Fusion bond interfaces of bondedwafers resilient to potassium hydroxide or tetramethyl ammonium hydroxideetching are obtained using wafers of oxidized silicon bonded to oxidizedsilicon, where the bond oxide is removed by trifluoromethane plasmaetching. Other investigated bond configurations initiate severe damagesduring etching.
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