The ternary CuGaS2 single crystals were grown by chemical vapor transport (CVT) method, using iodine as a transporting agent in a closed system. The as grown CuGaS2 crystals exhibit dark green color. The concentration of transporting agent was 12mg/cm3. The maximum size of single crystal has the dimension of 6×2×1mm3. XRD studies show that the grown crystal belongs to tetragonal (chalcopyrite) system with (112) as dominant orientation. High resolution scanning electron microscope (HR-SEM) analysis disclosed layer growth pattern of the CuGaS2 crystal. Energy Dispersive X-ray (EDX) analysis revealed the composition of the grown CuGaS2 crystal. Raman spectrum of the grown CuGaS2 crystal exhibited a sharp peak of the A1 mode at 308cm−1. The emission spectrum showed that the crystal has a band gap emission of 2.32eV (534nm) when excited with 490nm. The melting point of the grown CuGaS2 crystal was found to be 1236°C using differential thermal analysis.