Terahertz Radiation In Graphene Research Articles

Total cross-polarization conversion and polarization-sensitive amplification of terahertz radiation in graphene with direct electric current

Total cross-polarization conversion and polarization-sensitive amplification of terahertz radiation in graphene with direct electric current

Edge currents driven by terahertz radiation in graphene in quantum Hall regime

We observe that the illumination of unbiased graphene in the quantum Hall regime with polarized terahertz laser radiation results in a direct edge current. This photocurrent is caused by an imbalance of persistent edge currents, which are driven out of thermal equilibrium by indirect transitions within the chiral edge channel. The direction of the edge photocurrent is determined by the polarity of the external magnetic field, while its magnitude depends on the radiation polarization. The microscopic theory developed in this paper describes well the experimental data.

The effect of the strong spatial inhomogeneity of the electric field on plasmon rectification of terahertz radiation in graphene

The rectification of terahertz radiation in a spatially periodic graphene structure is studied. It is found that rectified current due to plasmonic electron-hole effect grows with spatial inhomogeneity of plasmon electric field in graphene.

Observation of Gate-Tunable Coherent Perfect Absorption of Terahertz Radiation in Graphene

We report experimental observation of electrically-tunable coherent perfect absorption (CPA) of terahertz (THz) radiation in graphene. We develop a reflection-type tunable THz cavity formed by a large-area graphene layer, a metallic reflective electrode and an electrolytic medium in between. Ionic gating in the THz cavity allows us to tune the Fermi energy of graphene up to 1eV and to achieve critical coupling condition at 2.8 THz with absorption of 99%. With the enhanced THz absorption, we were able to measure the Fermi energy dependence of the transport scattering time of highly doped graphene. Furthermore, we demonstrate flexible active THz surfaces that yield large modulation in the THz reflectivity with low insertion losses. We anticipate that the gate-tunable CPA will lead efficient active THz optoelectronics applications.

Gate-tunable coherent perfect absorption of terahertz radiation in graphene

Perfect absorption of radiation in a graphene sheet may play a pivotal role in the realization of technologically relevant optoelectronic devices. In particular, perfect absorption of radiation in the terahertz (THz) spectral range would tremendously boost the utility of graphene in this difficult range of photon energies, which still lacks cheap and robust devices operating at room temperature. In this work we show that unpatterned graphene flakes deposited on appropriate substrates can display gate-tunable coherent perfect absorption (CPA) in the THz spectral range. We present theoretical estimates for the CPA operating frequency as a function of doping, which take into account the presence of common sources of disorder in graphene samples.

Photocurrent-based detection of terahertz radiation in graphene

Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. In the quest for devices with a better signal-to-noise ratio, we theoretically investigate a plasma-wave photodetector in which a dc photocurrent is generated in a graphene FET. The noise equivalent power of our device is shown to be much smaller than that of a Dyakonov-Shur detector in a wide spectral range.