Temperature Dependence Of Dc Electrical Conductivity Research Articles

Design, structural, and electrical conduction behavior of Zr-modified BaTiO3-BiFeO3 perovskite ceramics

This study employs the solid-state reaction method to synthesize [(Ba0.7 Bi0.3) (Ti0.7-y Zry) Fe0.3] O3 (y = 0.0, 0.2, 0.3, 0.4, 0.6) for investigating their structural and DC conduction behavior. XRD analysis suggests a perovskite phase for all the compositions having a cubic crystal structure. Initially, average crystallite size increases for y ≥ 0.3 and then decreases for y = 0.4. The temperature-dependent DC electrical conductivity demonstrated the semiconducting nature for all the compositions. The introduction of Zr modifies the material’s structure and electrical properties evident in the observed variations in crystallite size and conductivity behavior. These findings contribute to the understanding of Zr-modified [(Ba0.7 Bi0.3) (Ti0.7-y Zry) Fe0.3] O3 ceramics, shedding light on their potential applications in semiconductor devices and solid-state electronics. The investigation underscores the importance of tailoring composition parameters for fine-tuning material characteristics, opening avenues for optimized utilization in electronic and energy-related technologies

Study of direct current charge transport mechanism in a series of iridium metal complexes based on varying ancillary and cyclometalated ligands

The mechanism of charge transport in a series of iridium metal complexes prepared with varying ancillary and cyclometalated ligands is reported here. The structural conformation of the synthesized complexes is acquired via NMR spectroscopy and elemental analysis. The photophysical properties of the samples are investigated through UV–visible and photoluminescence spectroscopy. The investigation of the temperature-dependent dc electrical conductivity of the samples is conducted within the temperature range of 280–473 K. The room temperature conductivity of all samples is determined to be of the order ∼10−8 S/cm. All the complexes exhibit semiconducting behavior in a certain temperature range above room temperature. A continued elevation in temperature leads to reduction in the conductivity of all the samples resulting in metal-like conduction behavior above a certain temperature. The transition temperature of the iridium metal complexes is attributed to the removal of the coordinated water molecule from the samples as suggested by thermal analysis of the complexes. The removal of water molecule from the sample is expected to localize the electron densities which consequently results in a fall of the conductivity in the samples. The conduction mechanism in the samples is analyzed in the light of band conduction mechanism and Mott’s variable range hopping model. All the samples are found to obey 1-D VRH mechanism. The activation energy and the corresponding Mott’s parameters are derived from the ln σ vs 1/T curves.

Structural and electrical conductivity studies of Polyaniline - WO3 hybrid nanocomposites for gas sensing applications

Abstract Conducting polymer – metal oxide based hybrid nanocomposites are a fascinating class of materials for miniaturized and flexible gas sensor devices. They exhibit enhanced physiochemical properties such as sensitivity, selectivity towards various volatile and hazardous chemical and bioanalytes. Our study focuses on conducting polyaniline (PANI) and WO3 nanocomposites, where different weight percentages (wt.%) of WO3 nanoparticles are embedded within the conducting PANI matrix using an in-situ oxidation polymerization synthesis technique. The surface morphology analysis indicated that the WO3 nanoparticles with an average grain size of ~200 nm are homogeneously distributed within the PANI nanofibers. The Fourier Transform Infra-Red (FTIR) spectrum analysis showed that the absorption peaks at 1111,1291, 1385, 1474, and 1560 cm−1 are typical of the conducting PANI emeraldine phase. We attribute the additional broad peak ranging between 840 to 720 cm−1 in the spectrum to WO3 phase, wherein, the intensity of the peak increases with WO3 content in case of hybrid composites. Current-voltage (I-V) characteristics for all our samples showed linear behaviour up to 1.2 volts. Temperature-dependent DC electrical conductivity (σ) studies measured from room temperature to 120°C for pure PANI, and PANI-WO3 composites showed an enhanced electrical conductivity of values up to 0.12 S/cm for PANI as compared to WO3 with σ ~ 1.4 x 10−3 S/cm. Pure PANI exhibits semiconducting behavior with an increase in electrical conductivity with temperature due to the charge carrier delocalization within the dispersed PANI backbone. The addition of higher concentrations of WO3 in composites leads to a metallic-like behavior, characterized by a decrease in electrical conductivity with temperature. These observations are attributed to the field-assisted band bending effects at the interfaces of PANI and WO3. Our composites show desired electrical characteristics suitable for gas sensing applications.

Engineered nanocomposites through embedding of smaller “organic inorganic” nanoparticles in thermoplastic Poly(2-Vinylpyridine) polymer matrix

Polymer nanocomposites (PNCs) are significant for modern and future applications owing to their multifunctionality promoted by morphology and tailored interfaces between the constituents. However, ‘forward’ engineered polymer (host) composites with smaller size nanoparticles (guest) providing desired properties remains challenging as they depend upon nanoparticles aggregation, size, shape, and loading (volume or weight) fraction. This study strategically designs and develops PNCs comprising thermoplastic poly (2-vinylpyridine) (P2VP) polymer matrix impregnated with spherical polyhedral oligomeric silsesquioxane (N-POSS) nanoparticles (diameter ∼2–5 nm) and anisotropic planar nitrogenated graphene nanoribbons (GNR, strip width ∼5–10 nm) commensurate with polymer chain radius of gyration, Rg, (or segment length ∼1.5 nm) and comparable energy scales of electrostatic interaction and attractive hydrogen bonding. We investigated static and dynamic structure and thermophysical properties to correlate with interfacial regions and the results are compared with larger graphene oxide (GO, lateral dimension ∼100–200 nm) nanosheets and silica (SiO2, ∼25–50 nm) particles. While electron microscopy revealed nanoparticle distribution, the lattice bonding, conjugation length, and mechanical properties are determined from micro-Raman spectroscopy and atomic force microscopy, respectively. The differential scanning calorimetry provided a measure of glass transition temperature, Tg, with positive shift of ∼10–18 °C with nanoparticles loading indicating strength of structural relaxation/chain rigidity behavior and thermogravimetric analysis displayed increased thermal stability and conductivity (decreased interfacial resistance). We also measured temperature dependent dc electrical conductivity and dielectric relaxation spectroscopy gaining insights into percolation and dynamic interfacial layer. This study signified understanding of interactions and interfacial regions, key element to demystify the microscopic structure-property relationships.

Impedance Spectroscopy and Study of Electrical Properties of Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)<sub>1-x</sub>Fe<sub>x</sub>O<sub>3-x</sub> (0≤x≤0.20) Ceramics

Iron substituted Lead zirconate titanate nanoparticles Pb (Zr0.52Ti0.48) 1-x FexO3-x (PZTFx) (for (x=0.00, 0.025, 0.05, 0.075, 0.10, 0.15 and 0.20) was prepared using the sol-gel route in the morphotropic phase boundary (MPB) region. The X-ray diffraction data revealed the formation of both rhombohedral and tetragonal structures. The microstructural properties of the compounds were examined through the scanning electron microscopy (SEM) technique. The impedance spectroscopy and conductivity spectroscopy were carried out over a wide range of temperatures (RT–400°C) and frequencies (100 Hz–2 MHz) to investigate the grain and grain boundary effect on the electrical properties of PZTFx. The complex impedance analysis data have been presented in the Nyquist plot which is used to identify the corresponding equivalent circuit and fundamental circuit parameters. Cole– Cole plots indicate Debye-type dielectric relaxation and the grain boundaries resistance is dominant at room temperature. The Nyquist plot showed the negative temperature coefficient of resistance (NTCR) character of PZTFx ceramics. The dielectric properties of (PZTFx) ceramics as a function of temperature are studied and displayed a resonance phenomenon for all samples. Temperature-dependent conductivity behavior indicated an Arrhenius type of thermally activated process in the low-temperature region. Activation energy has been calculated from the temperature-dependent DC electrical conductivity measurements for all the samples.

Water enrichment/depletion of amorphous carbon coatings probed by temperature-dependent dc electrical conductivity and Raman scattering

Amorphous carbon (a-C) is an appealing disordered multi-phase material widely used as a cost-effective barrier coating (10–100 nm thick) for silica optical fibers to protect them from harsh environments. Those coatings prevent strength degradation of the optical fibers by moisture and, also block hydrogen diffusion into the fiber. In this paper, we experimentally study the in situ temperature-dependent dc electrical conductivity and Raman scattering of dried/wetted a-C coatings under multiple heating/cooling cycles within the range of 40–120 °C. At temperatures of above 80 °C, we observe hysteresis in both the dc electrical resistance and the Raman scattering intensity. One of the mechanisms is related to the escape of intercalated (or spatially confined) water from the a-C coating, causing the resistance decrease due to a closing of the bandgap. The opposite is observed when some water molecules experience dissociative absorption at the edge and basal defects that may be decorated with CH, COOH/COH and COC/CO functional groups. The content of water within the a-C coating is quantified through relative contributions of the water and edge defect related Raman bands. This study expands our knowledge about a-C ultrathin films, originally designed as barrier coatings, towards promising ultracompact humidity sensors and next-generation adsorbents.

Design, structural evolution, optical, electrical and dielectric properties of perovskite ceramics Ba1-xBixTi1-xFexO3 (0 ≤ x ≤ 0.8)

The ceramics with perovskite structure of the compositions Ba1-xBixTi1-xFexO3 (x = 0, 0.2, 0.4, 0.6 and 0.8) were synthesized through the conventional solid-state reaction route. All prepared samples were characterized by X-ray diffraction, Raman spectroscopy, UV–visible spectroscopy and impedance spectroscopy. The X-ray diffraction characterization at room temperature indicated the formation of perovskite phase in all the samples. The X-ray diffraction data refined by Rietveld technique revealed two phase transitions with the increase of BiFeO3 content, the first structural transformation from tetragonal (P4mm) to cubic (Pm3‾m) and the second from cubic (Pm3‾m) to rhombohedral (R3c), which were confirmed by Raman spectroscopy. UV–vis absorption spectra of doped compounds indicated the presence of four electronic transitions in octahedrally coordinated Fe3+ ions from their fundamental 6A1g(S) level to different excited levels. The co-doping of Bi3+ and Fe3+ ions from 0% to 80 mol% leads to a decrease of the direct band gap energy from 3.29 to 1.91 eV, and a shift of the band gap edges, namely the conduction band minimum and valence band maximum. The impedance results suggest that both grain (G) and grain boundary (GB) contribute to the total conductivity and the effect of this latter increases with (Bi, Fe) content. Additionally, the Nyquist plots showed the negative temperature coefficient of resistance (NTCR) and the temperature-dependent dc electrical conductivity demonstrated the semiconducting nature for all samples. The sample x = 0.4 exhibited the highest dc electrical conductivity. The activation energy values revealed that the conduction mechanism is dominated by ionized oxygen vacancies. The changes of dielectric properties at room temperature with increasing BiFeO3-doping amount are discussed.

Structural and dc electrical transport study of Cu-Zn ferrialuminates prepared by chemical route

Ferrimagnetic ionic crystalline materials, with general formula AB2O4are termed as spinel phase ferrites. Electro – magnetic properties, concentration of different ions and surface morphology of mixed–metal oxides shows significant applications in the various fields. In above work, Cu doped Zn ferrialuminate were prepared by sol-gel auto-combustion route. Purity of the synthesized materials were confirmed by XRD analysis which reveals the formation spinal phase structure and by applying the Debye-Scherer’s formula. Nanocrystalline nature of the samples were studied by transmission electron microscopy (TEM). The particle was found in the nanorange. The temperature dependent DC electrical conductivity was studied by two probe method. Semiconductor behavior with the rise in temperature were found in all the samples.

Synthesis and studies of Cr doped Zn ferrites

Ferrites are also termed as Ferrimagnetic ionic crystalline materials, with general formula MFe2 O4. Depend on the particle size, ferrite shows significant applications in the wide area. We have prepared Cr doped Zn Ferrite by co-precipitation method. The prepared ferrite materials were confirmed by XRD analysis. The XRD data confirms the formation spinal phase structure and by applying the debye scherrer formula, the particle was found in the nano range. The temperature dependent DC electrical conductivity was studied. The obtained result shows materials have semiconductor behaviour with the rise of temperature.

Dependence of Electrical Properties on Frequency and Temperature for Novel Cyclopentenone Derivatives

Electrical properties of some new cyclopentenone derivatives have been studied. The structures of prepared samples were characterized by (UV), (XRD) and (SEM). The dependence of electrical properties such as σdc , σac , ɛ' and ɛ'' on frequency and temperature were studied at frequency range from 50 Hz to 5 MHz and the temperature range from 25oC to 140oC. It was found that, ɛ' decreased with increasing frequency while it increases with increasing temperatures within the used ranges. Moreover, dielectric constant is structural dependent which is obvious from the variation of dielectric constant for each sample.
 Ac-electrical conductivity increased with increasing frequency which was attributed to the polarization of the charge carriers. The temperature dependence of dc-electrical conductivity show typical Arrhenius relation for the three prepared samples. The activation energy calculated from Arrhenius equation and the results are discussed in detailed.

Electron transport in surface modified TiO2 nanoparticles

Surface modified nanoparticles of P25 Evonik Degussa TiO2 with silane coupling agent 3-(2-aminoethylamino) propyltrimethoxysilane (AAPTMS) were prepared at low temperature conditions. The samples were characterized using the BET technique. Their temperature dependent dc electrical conductivity was investigated in the temperature range 195–440 K. In order to investigate the influence of the environment, measurements were conducted in vacuum and in air. A change of conductivity with the molar ratio of AAPTMS/P25 is shown. Moreover, a decrease of conductivity is exhibited when compared to that of P25 nanopowder, attributed to the presence of silica in AAPTMS. The modified samples show a significant decrease of conductivity in air. In addition, the conductivity dependence on temperature differs from that in vacuum, suggesting the competition between the adsorption of oxygen and water from the surrounding atmosphere. It was demonstrated that the electrical conduction was controlled by the grain boundaries and the small polaron hopping at the high and intermediate temperatures whereas Mott's variable range hopping was the main conduction mechanism at the lower temperature regime.

Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

Spinel ferrites with nominal composition MgPryFe2−yO4 (y=0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1MHz–3GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole–Cole plots were used to separate the grain and grain boundary’s effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary’s resistance as compared to the grain’s resistance. As both AC conductivity and Cole–Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe2O4 exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.

DC Electrical Conductivity Studies of GeO<sub>2</sub> Doped Lead Vanadate Glass System

Temperature dependent DC electrical conductivity studies of GeO2 substituted lead vanadate glass systems xGeO2(50-x)PbO:50V2O5 (x = 5, 10, 15 mole%) were carried out and the results are reported. X-ray diffraction results reveal that all samples are perfect amorphous in nature. DSC results indicate that the substituent GeO2 is replacing PbO in the glass network in such a way that the eutectic composition is maintained. DC electrical conductivity studies of the glass samples indicate that the systems are characterized by different activation energies in different temperature ranges which in turn depend on the annealing temperature. These results are interpreted in terms of temperature dependent microstructural changes in these glass systems.

Role of Sb Substitution on Electrical Properties of Se-Te Glasses

Objectives: This paper reports the influence of Sb addition on the electrical properties on bulk samples of Se80-xTe20Sbx(x=0,6, 12) glasses. Methods/Statistical Analysis: The amorphous samples have been prepared using melt quenching method and the pellets of the bulk sample of thickness 1mm and diameter 5mm has been formed using pelletiser. The I-V measurements of pellets have been recorded on Keithley electrometer in the temperature range 298-398 K. The data obtained is analysed to calculate activation energy of conduction and temperature dependent dc electrical conductivity. Findings: The observations suggest that conductivity decreases due to formation of highly crosslinked structure when Sb is added in less amount i.e. 6 at.wt% whereas on addition of Sb upto 12 at. wt. %, conductivity increases significantly due to increase in ring structure and decrease of steric hindrance in system. Earlier reports on the electrical properties of Se-Te-Sb system provided information upto 10 at. wt. % of Sb addition to Se-Te system, whereas in present study Sb is added upto 12 at.wt.% to get its influence on electrical properties of Se-Te system. Applications/Improvements: The higher content of Sb in Se-Te system increases the electrical conductivity which makes it a potential candidate for application in electronic devices.

Structural, optical and electrical properties of YbInSe thin films

In this work, the compositional, the structural, the vibrational, the optical and the electrical characterizations of the YbInSe compound are investigated by means of energy dispersion X-ray analysis, scanning electron microscopy and X-ray diffraction, Raman spectroscopy, ultraviolet -visible light spectrophotometry, impedance spectroscopy and temperature dependent electrical conductivity, respectively. The 300nm thick YbInSe films which were prepared by the co-evaporation of the source materials under a vacuum pressure of 10−5mbar, are observed to exhibit nanocrystalline clusters of size of 27nm regularly distributed among an amorphous structure. The most intensive Raman active lines are observed at 150 and 254cm−1. In addition, the optical analysis has shown that the films exhibit a direct forbidden electronic transitions type energy band gap of 1.07eV. The optical transitions are associated with interband tail states of width of 0.28eV. Moreover, the real and imaginary parts of dielectric spectra which were analyzed in the frequency range of 270–1000THz, were analyzed in accordance with the single oscillator and the Lorentz models, respectively. The modeling allowed determining the oscillator and dispersion energies, the terahertz free carrier scattering time, the free holes effective mass, the carrier density, the drift mobility and the reduced resonant frequency for the YbInSe films. In the electronic part of study, the temperature dependent dc electrical conductivity analysis, indicated the domination of the variable range hopping transport mechanism below 335K, the thermal excitation of charge carriers in the range of 337–390K and the extrinsic-intrinsic transition property at 390K. The ac conductivity spectra which were recorded in the frequency range of 10–1500MHz, revealed the domination of the correlated barrier hopping of free carriers between pairs of localized states at the Fermi level.

Evaluation of microstructural and electrical properties of WO3-x thin films for p-Si/n-WO3-x/Ag junction diodes

The ln(J)-V-T characteristics of the p-Si/n-WO3-x/Ag junction diode have been analyzed by thermionic emission (TE) mechanism with Gaussian distribution (GD) of the barrier heights. The ultra-fine homologous phases of tungsten oxide (WO3-x) thin films on the glass substrate can be prepared simply via sol-gel spin coating method. The oxygen reduction of the tungsten trioxide (WO3) thin films was experimentally controlled by various organic acid additives. The organic acid-treated films have hexagonal and monoclinic crystallographic Magneli phases of WnO3n-2 series (WO2.92, WO2.9 and WO2.89). The morphological changes in the plate-like structure under the strong influence of the organic acids were observed from SEM analysis. In the temperature dependent dc electrical conductivity, the charge transport mechanism of the WO3-x thin films was analyzed by Arrhenius, Mott’s variable hopping, small polaron mechanisms. From the J-V-T characteristics of the p-Si/n-WO3-x/Ag diode, the increasing of barrier height (ΦB) and decreasing of ideality factor (n) reveal that barrier inhomogeneities at the interface, which is assumed by Gaussian distribution. The mean barrier height (ΦB), the standard deviation (σ02) and Richardson constant (A*) values were investigated in the temperature range 303−423K. The better diode performance was acquired to the Si/WO2.89/Ag device with the experimentally intended A* value of 34.81A/cm2/K2 which is near to the well-known value of 32A/cm2/K2 for p-type Si.

Optical and electrical characterization of BixSe1−x thin films

Abstract Bulk samples of the BixSe1-x system with (x = 0, 5, and 10) were prepared using conventional melt quenching technique. Thin films were then deposited by thermal evaporation technique under high vacuum conditions from the prepared bulk samples. Effect of Bi substitution on surface morphology, electrical and optical properties of BixSe1-x thin films was studied. X-ray diffraction studies showed the formation of nanocrystalline clusters at Bi concentration x = 10. Formation of these clusters resulted in a rough surface which was confirmed by AFM measurements. The film surface was smooth, with RMS roughness of 0.0124 nm for Bi5Se95. For Bi10Se90, the RMS roughness increased to 3.93 nm indicating the formation of Bi2Se3 clusters. A simple hot probe technique showed a transition from p-type to n-type due to Bi incorporation. Charge transport mechanisms were investigated by temperature dependent DC electrical conductivity measurements in the temperature range of 209 K to 313 K. Electrical activation energy (ΔE) of the films with different Bi concentrations was found to exhibit a notable change at the p to n transition. At low temperature, the conduction was in reasonable agreement with Mott’s condition of variable range hopping. Mott parameters and the density of localized states near Fermi level were evaluated and correlated with the structural changes resulting from Bi addition. In addition, a red shift of the optical absorption edge of the films under study caused by Bi-Se substitution was observed. Slight changes in the optical parameters were observed with the γ-irradiation. Addition of Bi atoms could be used to tailor the structural, electrical and optical properties of chalcogenide materials such as junctionless photovoltaic devices.

Electron transport and photoelectrical behavior of poly(N-vinylcarbazole)/Poly(3,4-ethylenedioxythiophene) composite honeycomb-patterned films

New type of poly(N-vinylcarbazole) (PVK) polymer nanocomposites were prepared by a solid-state polymerization of N-vinylcarbazole in the presence of different concentration (wt%) of poly(3,4-ethylenedioxythiophene) (PEDOT). The prepared PVK/PEDOT nanocomposites were characterized by using Fourier transform infrared (FTIR) and UV-vis spectra. The transmission electron microscopy (TEM) and X-diffraction studies were performed to understand the surface morphology and nature of the polymer composites. The characterization and morphological studies suggest that there is a conjugation between PVK and PEDOT. Furthermore, the honeycomb-patterned films were obtained by dissolving the PVK/PEDOT nanocomposites into the chloroform solvent under humid conditions. The temperature-dependent DC electrical conductivity and room temperature photo-electrical conductivity of the honeycomb-patterned films were measured. Results showed that the incorporation of PEDOT in PVK polymer has greatly improved the electrical conductivity and photo-electrical behavior of the PVK/PEDOT nanocomposites.

Temperature dependence of dc electrical conductivity of activated carbon–metal oxide nanocomposites. Some insight into conduction mechanisms

From a commercial activated carbon (AC) and six metal oxide (Al2O3, Fe2O3, SnO2, TiO2, WO3 and ZnO) precursors, two series of AC–metal oxide nanocomposites are prepared by wet impregnation, oven-drying at 120°C, and subsequent heat treatment at 200 or 850°C in inert atmosphere. The temperature-dependent dc electrical conductivity of AC and the as-prepared nanocomposites is measured from room temperature up to ca. 200°C in air atmosphere by the four-probe method. The decrease in conductivity for the hybrid materials as compared to AC is the result of a complex interplay between several factors, including not only the intrinsic conductivity, crystallite size, content and chemical nature of the supported nanoparticles, which ultimately depend on the precursor and heat treatment temperature, but also the adsorption of oxygen and water from the surrounding atmosphere. The conductivity data are discussed in terms of a thermally activated process. In this regard, both AC and the prepared nanocomposites behave as semiconductors, and the temperature-dependent conductivity data have been interpreted on the basis of the classical model proposed by Mott and Davis. Because of its high content of heteroatoms, AC may be considered as a heavily doped semiconductor, so that conduction of thermally excited carriers via acceptor or donor levels is expected to be the dominant mechanism. The activation energies for the hybrid materials suggest that the supported metal oxide nanoparticles strongly modify the electronic band structure of AC by introducing new trap levels in different positions along its band gap. Furthermore, the thermally activated conduction process satisfies the Meyer–Neldel rule, which is likely connected with the shift of the Fermi level due to the introduction of the different metal oxide nanoparticles in the AC matrix.

Structural And Electrical Properties Of Self-standing Polyaniline Films Modified With Gold Nanoparticles

Self-standing polyaniline (Pani) films modified with gold nanoparticles (Au NP's), where Au NP's are added in different successive weight percents, have been synthesized by conventional chemical polymerization technique. An in-depth investigation of the structural and electrical characteristics of prepared films has been conducted using various characterizations. The X-ray diffraction (XRD) validates the presence of Au NP's in Pani and the results are supported well by energy dispersive X-ray analyzer (EDX). The field emission scanning electron microscopy (FESEM) clearly shows thorough dispersion of Au NP's in the amorphous host matrix with minor aggregation. The Fourier transform infrared red (FTIR) studies give the information of possible chemical interaction between the nanoparticles and polymer which is in good agreement with charge transfer mechanism proposed in the manuscript. The temperature dependent dc electrical conductivity has been observed to depend strongly on the nanoparticle loading and follows Mott's three-dimensional variable range hopping (3D VRH) conduction mechanism. Parameters obtained from Hall Effect measurements are of same order as is calculated by dc measurements which indicates a very good corroboration of results. Higher ac conductivity, dielectric constant and dielectric loss of nanocomposites have also been observed as compared to that of pure Pani. Copyright © 2015 VBRI Press.