Temperature Dependence Of Piezoelectric Properties Research Articles

Temperature dependence of piezoelectric properties of PLZT in a smart structure

A piezoelectric material can be used as a sensor and actuator in active vibration control of a smart structure. The performance of the piezoelectric material is defined by piezoelectric coefficient and dielectric constant. These parameters vary with change in temperature. In this article, the temperature dependence of piezoelectric coefficient and dielectric constant is included in the constitutive equations of the piezoelectric materials. These modified constitutive equations are included in the finite element model of a smart structure instrumented with piezoelectric patches. Simulations are done in MATLAB® software for both modified and non-modified finite element model and shown in the results.

The performance enhancement and temperature dependence of piezoelectric properties for Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 single crystal by alternating current polarization

The comparison and analysis of piezoelectric properties for [001]-oriented PMN-0.30PT by different polarization conditions were investigated. It should be noticed that the average piezoelectric coefficients d33 of PMN-0.30PT crystals were 1860 pC/N by alternating current (AC) polarization and 1380 pC/N by direct current (DC) polarization, which indicates a promotion of 35.3%. The domain patterns in the [001] surface of PMN-0.30PT single crystals under different polarization conditions are obtained by piezo-response force microscopy. The enhancement of piezoelectric performance by AC polarization is attributed to the regular stripe domains with high domain wall density. With the temperature increased to TR-T, both the values of dielectric constant εrT and piezoelectric coefficients d33 under AC polarization condition maintain higher compared to traditional DC poled samples. In addition, both the values of e33 and ε33S under AC polarization retain higher than that of DC polarization, suggesting that the special domain structure with high domain wall density by AC polarization keeps a stable state as the temperature increased to TR-T. When the temperature increased from TR-T to TT-C, the piezoelectric properties of crystals (εrT and d33) under different polarization conditions become the same status, which indicates that the domain structure under the different conditions of polarization may tend to the similar state and the extrinsic contribution from the domain wall motion by AC polarization is disappeared.

Temperature Stability of Lead‐Free Niobate Piezoceramics with Engineered Morphotropic Phase Boundary

The temperature dependence of piezoelectric properties (direct piezoelectric coefficient d33, converse piezoelectric coefficient d33(E = 0), strain S and electromechanical coupling coefficient kp) for two niobate‐based lead‐free piezoceramics have been contrasted. 0.92(Na0.5K0.5)NbO3–0.02(Bi1/2Li1/2)TiO3–0.06BaZrO3 (6BZ/2BLT/92NKN) has a morphotropic phase boundary (MPB) between rhombohedral and tetragonal at room temperature and 0.92(Na0.5K0.5)NbO3–0.03(Bi1/2Li1/2)TiO3–0.05BaZrO3 (5BZ/3BLT/92NKN) features an MPB engineered to be located below room temperature. At 30°C, d33, d33(E = 0), S (at 2 kV/mm), and kp are 252 pC/N, 230 pm/V, 0.069%, 0.51 for 5BZ/3BLT/92NKN; and 348 pC/N, 380 pm/V, 0.106%, 0.57 for 6BZ/2BLT/92NKN, respectively. With increasing temperature, the piezoelectric properties decrease. At 200°C, d33, d33(E = 0), S (at 2 kV/mm), and kp are 170 pC/N, 160 pm/V, 0.059%, 0.36 for 5BZ/3BLT/92NKN; and 181 pC/N, 190 pm/V, 0.061%, 0.39 for 6BZ/2BLT/92NKN. It is found that the electromechanical coupling coefficient has a better temperature stability than the piezoelectric coefficient in the studied system due to a large temperature‐dependent compliance change. The results demonstrate that engineering an MPB is highly effective in tailoring temperature stability of piezoceramics.

(K,Na)NbO3‐Based Lead‐Free Piezoceramics: Fundamental Aspects, Processing Technologies, and Remaining Challenges

Environment‐friendly lead‐free piezoelectric ceramics have been studied extensively in the past decade with great progress particularly in systems based on a niobate perovskite compound formulated as (K, Na)NbO3 (abbreviated as KNN). A comprehensive review on the latest development of KNN‐based piezoelectric ceramics is presented in this article, including the phase structure, property enhancement approaches, and sintering processes as well as the status of some promising applications. The phase structure of KNN was reexamined and associated with the effect of chemical modification on its tetragonal‐to‐orthorhombic transition. Then, a special focus is placed on the temperature dependence of piezoelectric properties of KNN‐based ceramics, followed by reviewing the recent approaches devoted to the temperature‐stability enhancement. The processing fundamentals related to the sintering of KNN‐based ceramics are also presented with an emphasis on compositional and microstructural control. Finally, this review introduces several industrial attempts of traditional piezoceramic products using KNN‐based ceramics and the studies on some promising application in authors' laboratory.

Thermal stability of piezoelectric coefficients in (Ba1−xCax)(Zr0.05Ti0.95)O3: A lead-free piezoelectric ceramic

Temperature dependence of piezoelectric properties of calcium doped Ba(Zr0.05Ti0.95)O3 ceramic has been investigated. The piezoelectric coefficients k31, kp, and d31 show anomaly near orthorhombic to tetragonal and rhombohedral to orthorhombic phase transition temperatures. Above orthorhombic to tetragonal transition temperature, all the coefficients are decreasing gradually but a sharp drop is observed near tetragonal to cubic transition. A percentage variation of kp was calculated between temperature range of −20 to 70 °C. It shows a variation of 10%–25% of its values for all the compositions.

Consultation de sevrage tabagique résultats de deux années de fonctionnement

Li0.02(KxNa1−x)0.98NbO3(x = 0.35–0.55) ceramics were prepared using the conventional solid state sintering method. The thermal behaviors of Li-modified (KxNa1−x)NbO3 ceramics were investigated from −30 to 150 °C, and the effect of Na/K ratio in (KxNa1−x)NbO3 ceramics on thermal behavior and electrical properties was also studied. In the case of Li0.02(KxNa1−x)0.98NbO3 ceramics with 0.5 wt.% ZnO, the transition temperature was sharply decreased because of a phase transition as the composition range of x was 0.425–0.475. From the results of the temperature dependence of piezoelectric properties, it is assumed that the Na-rich phase is less stable than the K-rich phase for temperature change.

Temperature dependence of elastic and piezoelectric properties of lead-free (Li,Na,K)NbO 3 ceramics

Temperature dependence of both elastic and electric properties for tetragonal (Li 0.06Na 0.47K 0.47)NbO 3 (LNKN-6) ceramics was investigated. The sample was prepared using a conventional solid-state reaction method. The elastic and piezoelectric properties were characterized using the resonance method as a function of temperature ranging from −50 to 50 °C. Elastic compliance S 31 E and S 33 E showed the maximum values at specific temperatures of 0 and −5 °C, respectively, while dielectric constant ε 11 T and ε 33 T showed anomalies at 20 and 7 °C, respectively. Such anisotropic properties were also observed in the measurement of the temperature dependence of the piezoelectric properties. Anisotropic temperature dependence of both the elastic and electric properties in LNKN-6 ceramics was evaluated.

Temperature stability and phase transition of Li 0.02(K xNa 1− x) 0.98NbO 3 ceramics

Li 0.02(K x Na 1− x ) 0.98NbO 3( x = 0.35–0.55) ceramics were prepared using the conventional solid state sintering method. The thermal behaviors of Li-modified (K x Na 1− x )NbO 3 ceramics were investigated from −30 to 150 °C, and the effect of Na/K ratio in (K x Na 1− x )NbO 3 ceramics on thermal behavior and electrical properties was also studied. In the case of Li 0.02(K x Na 1− x ) 0.98NbO 3 ceramics with 0.5 wt.% ZnO, the transition temperature was sharply decreased because of a phase transition as the composition range of x was 0.425–0.475. From the results of the temperature dependence of piezoelectric properties, it is assumed that the Na-rich phase is less stable than the K-rich phase for temperature change.

Temperature Dependences of Resonance Frequency on SrBi2Nb2O9–Bi4Ti3O12 Ceramics

Temperature dependences of piezoelectric properties on mixed bismuth layer-structured ferroelectrics (BLSFs), SrBi2Nb2O9-Bi4Ti3O12 (SBN-BIT), were studied for resonator applications, aiming to have a low temperature coefficient of resonance frequency (TC-f). The SBN-BIT ceramic exhibited double dielectric anomaly peaks at 250 and 706°C from the measurement of temperature dependences of dielectric properties. We confirmed that the temperature dependences of resonance frequency also had anomaly peak at the first phase transition temperature, indicating the minimum TC-f value. In particular, the TC-f values of the (t) mode indicated −52.3 ppm/°C for the temperature range below 250°C and +4.7 ppm/°C above 250°C, which is very close to 0 ppm/°C. Moreover, it was clarified that a grain orientation was very effective for improving the TC-f values.

Piezoelectric properties and stabilities of CuO-modified Ba(Ti,Zr)O3 ceramics

Due to the orthorhombic-tetragonal polymorphic phase transition near room temperature, undesirable large temperature dependence of piezoelectric properties is observed over common usage temperature range in BaTiO3 ceramics with high d33 values. Whereas shifting the phase transition temperature upward by partially substituting Ti with Zr is effective in reducing the piezoelectric temperature dependence, serious long-term degradation occurs. However, it is found that this could be overcome by incorporating a small amount of CuO additive. CuO-modified Ba(Ti0.9625Zr0.0375)O3 ceramics possess excellent piezoelectric properties of d33=300 pC/N, kp=0.493, and k33=0.651 with tan δ=0.011, and its kp remains larger than 0.40 in the broad temperature range from −43 to 73 °C and is almost constant between −25 and 55 °C. The results indicate that CuO-modified Ba(Ti,Zr)O3 ceramics are a promising low-cost lead-free material for practical applications.

High Temperature Piezoelectric Properties of Vanadium Doped Bi4Ti3O12 Ceramics with Grain Orientation

The grain orientation effects of Bi 4 Ti0.98V 0.02 O 12 [HF-BITV-0.02] ceramics were investigated using the hot-forging (HF) method for their piezoelectric properties and the high temperature piezoelectric characteristics were examined. Piezoelectric properties of electromechanical coupling factor, k 33 , piezoelectric strain constant, d 33 , piezoelectric voltage constant, g 33 and mechanical quality factor, Q m at room temperature were 0.39, 40.1 pC/N, 34.5 × 10− 3 Vm/N and 1500, respectively. The HF-BITV-0.02 indicates both high Curie temperature, T c (= 678°C) and high g 33 value as compared with other high temperature piezoelectric materials. From the measurement of piezoelectric properties after the thermal annealing at 550°C, the k 33 and Q m are revealed to keep high values of approximately 0.37 and 1300, respectively, without a depolarized degradation up to 550°C. The real time temperature dependences of piezoelectric properties indicate a good resonance and antiresonance curve and the k 33 higher than 0.37 at 400°C. Therefore, the HF-BITV-0.02 ceramics seem to be good candidate for lead-free high-temperature piezoelectric materials.

Temperature dependence of piezoelectric properties on Nd and V co-substituted Bi4Ti3O12 ceramics for ceramic resonator applications

Abstract The temperature dependences of the piezoelectric properties of (Bi 4− y Nd y ) 1−( x /12) (Ti 3− x V x )O 12 [BNTV- x , y ( x = 0.01, y = 0.00–1.00)] were investigated for environmentally friendly lead-free piezoelectric ceramic resonators with low-temperature coefficients of resonance frequency, TC-f . The | TC-f | in the (33) mode improved with increasing concentration of modified Nd ions, y , and exhibited the smallest | TC-f | value of 77.4 ppm/°C at y = 0.75 (BNTV-0.75). The | TC-f | in the other vibration mode ( t ), was also investigated for the BNTV-0.75 ceramic, and a smaller value of 42 ppm/°C was obtained. The ( t ) mode of the BNTV-0.75 ceramic showed excellent piezoelectric properties: Q m = 4200, Q e max = 31 and TC-f = −49.8 ppm/°C. These properties are very similar to those of commercialized hard PZT ceramics for resonator applications. The BNTV-0.75 ceramic seems to be a superior candidate material for lead-free piezoelectric applications of ceramic resonators.

Temperature dependence of piezoelectric properties for textured SBN ceramics

Temperature dependences of piezoelectric properties were studied for h001i textured ceramics of bismuth layer-structured ferroelectrics, SrBi(2)Nb(2)O(9) (SBN). The textured ceramics with varied orientation degrees were fabricated by templated, grain-growth method, and the temperature dependences of resonance frequency were estimated. Excellent temperature stability of resonance frequency was obtained for the 76% textured ceramics. The resonance frequency of the 76% textured specimens varied almost linearly over a wide temperature range. Therefore, the variation was slight, even in a high temperature region above 150 degrees C. Temperature stability of a quartz crystal oscillator is generally higher than that of a ceramic resonator around room temperature. The variation of resonance frequency for the 76% textured SrBi(2)Nb(2)O(9) was larger than that of oscillation frequency for a typical quartz oscillator below 150 degrees C also in this study. However, the variation of the textured SrBi(2)Nb(2)O(9) was smaller than that of the quartz oscillator over a wide temperature range from -50 to 250 degrees C. Therefore, textured SrBi(2)Nb(2)O(9) ceramics is a major candidate material for the resonators used within a wide temperature range.

Temperature dependences of piezoelectric properties of vanadium substituted SrBi 2Nb 2O 9 ceramics with grain orientation

The temperature dependence of the piezoelectric properties of vanadium substituted strontium bismuth niobate, SrBi 2Nb 1.95V 0.05O 9 (SBNV) ceramics, were investigated in various vibration modes. The effects of grain orientation in SBNV ceramics on the piezoelectric properties were also studied by the hot-forging (HF) method. The anisotropy of the piezoelectric properties of each vibration mode was confirmed by observing the grain orientation. In particular, HF-SBNV ceramics of the (33) and (15) modes showed excellent piezoelectric properties with relatively high mechanical quality factors, Q m (2200, 4600), and high electrical quality factors, Q e max (66.0, 21.6), respectively. In addition, HF-SBNV ceramics showed low temperature coefficients of resonance frequency TC- f r (−16.5, −27.0). HF-SBNV ceramics are considered to be superior candidates for the lead-free piezoelectric application of ceramic resonators.

Grain-Size Effect on Electrical Properties of (Bi1/2K1/2)TiO3 Ceramics

In this study, Bi2O3-doped bismuth potassium titanate, (Bi1/2K1/2)TiO3, (abbreviated to BKT-Bix; x=0, 0.1, 0.2, 0.4, and 0.6 wt %) ceramics were fabricated by hot-pressing method, and its electrical properties were investigated in detail. Moreover, BKT-Bi0.6 was annealed at 1040 °C for 4–20 h to develop grains [abbreviated to BKT-Bi0.6(y h); y=4, 10, and 20]. The ferroelectric properties were improved by grain growth, and the remanent polarization, Pr, of BKT-Bi0.6(10 h) was 27.6 µC/cm2. The piezoelectric properties were improved by field cooling method, and the electromechanical coupling factor, k33, and piezoelectric constant, d33, of BKT-Bi0.6(10 h) improved up to 0.40 and 101 pC/N, respectively. Moreover, the temperature dependences of piezoelectric properties were measured, and piezoelectricity disappeared at 280 °C for BKT-Bi0.6(10 h).

Temperature dependence of piezoelectric properties of sputtered AlN on silicon substrate

We report for the first time the temperature dependence of the piezoelectric coefficient d 33 of the aluminum nitride (AlN) film measured at temperatures up to 300 °C. A highly c-axis oriented AlN film was successfully deposited on a polycrystalline silicon/silicon dioxide/silicon wafer by a reactive sputtering technique to form a piezoelectric uni-morph actuator. A scanning laser Doppler vibrometer was used to measure the picometer level displacement of the actuator at 20 kHz at different temperatures. The piezoelectric coefficient d 33 has a constant value at temperatures ranging between 20 °C and 300 °C.

Synthesis and Properties of [Bi0.5(Na1-xAgx)0.5]1-yBayTiO3 Piezoelectric Ceramics

A new group of ABO3-type lead-free piezoelectric ceramics, [Bi0.5(Na1-xAgx)0.5]1-yBayTiO3, was developed, and the corresponding invention patent was submitted. The ceramics were synthesized by the conventional ceramic sintering technique using electronic grade raw materials, and the preparation techniques are very stable and convenient. The crystalline phase, microstructure and electric properties of the ceramics were also investigated. All the ceramics have high densities of about 5.70–5.84 g/cm3, which are more than 95% of the theoretical values. This system provides high piezoelectric performances: d33=168 pC/N, kp=0.31 when x=0.06, y=0.06. Moreover, the samples doped with a moderate amount of Mn could increase the mechanical quality factor Qm and reduce the dielectric loss tgδ simultaneously. The temperature dependence of piezoelectric properties measured show that at up to 180°C, d33 can still remain 126 pC/N for [Bi0.5(Na0.96Ag0.04)0.5]0.90Ba0.10TiO3 ceramics, which has a d33 of 137 pC/N at room temperature.

Temperature dependence of piezoelectric properties of PMN-PT and PZN-PT single crystals

The temperature dependence of the piezoelectric properties of0.67Pb(Mg 1/3 Nb 2/3 )O 3 -0.33PbTiO 3 and 0.955Pb(Mg 1/3 Nb 2/3 )O 3 -0.045PbTi03 single crystals, respectively grown by Bridgman and modified Bridgman method was investigated. Due to their low rhombohedral to tetragonal transition temperature (T n = 90°C and 124°C) and Curie point (T c = 152°C and 166°C), the properties of these single crystals have an unstable behavior as soon as the first transition temperature is reached, i.e. the piezoelectric coefficients exhibit a non linear or a hysteretic behavior during temperature cycle. The objective of this paper is to study the thermal stability of piezoelectric and dielectric coefficients for the two compositions in order to point out the limiting factors in term of transducers performances and to explain the observed behavior.

Piezoelectric properties in PMN–PT relaxor ferroelectrics with MnO2 addition

Abstract The temperature dependence of piezoelectric properties in the PMN–PT relaxor ferroelectric system with MnO 2 addition was studied in the temperature range from −40 to 30°C. Samples were poled at −40°C and the piezoelectric properties were measured by resonance–antiresonance method. Q m increased by increasing the doping contents of Mn. When 0.5 wt.% MnO 2 was doped, Q m increased from 95 to 480. From the experimental results, it is predicted that Mn behaves as an acceptor and a domain pinning element. The effects of MnO 2 observed in PZT-based normal ferroelectrics were also confirmed in PMN-based relaxor ferroelectrics.

Temperature dependence of piezoelectric properties for relaxor-ferroelectric solid solutions undergoing a rhombohedral to tetragonal phase transition

The piezoelectric properties of rhombohedral relaxor-ferroelectric compositions close to morphotropic phase boundary have been studied as a function of temperature. As they exhibit, upon heating, a rhombohedral to tetragonal phase transition the piezoelectric behavior changed with temperature. Large piezoelectric (d33) and coupling (k33) coefficients of 0.91 Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 single crystals drop to usual ceramic values after crossing the transition. Intrinsic and reversible contributions to the piezoelectric response reach a maximum at transition for 0.50PNN-0.16PZ-0.34PT. The influence of poling temperature on extrinsic contributions through possible structural changes was demonstrated.