High Temperature Piezoelectric Properties of Vanadium Doped Bi4Ti3O12 Ceramics with Grain Orientation

Abstract

The grain orientation effects of Bi 4 Ti0.98V 0.02 O 12 [HF-BITV-0.02] ceramics were investigated using the hot-forging (HF) method for their piezoelectric properties and the high temperature piezoelectric characteristics were examined. Piezoelectric properties of electromechanical coupling factor, k 33 , piezoelectric strain constant, d 33 , piezoelectric voltage constant, g 33 and mechanical quality factor, Q m at room temperature were 0.39, 40.1 pC/N, 34.5 × 10− 3 Vm/N and 1500, respectively. The HF-BITV-0.02 indicates both high Curie temperature, T c (= 678°C) and high g 33 value as compared with other high temperature piezoelectric materials. From the measurement of piezoelectric properties after the thermal annealing at 550°C, the k 33 and Q m are revealed to keep high values of approximately 0.37 and 1300, respectively, without a depolarized degradation up to 550°C. The real time temperature dependences of piezoelectric properties indicate a good resonance and antiresonance curve and the k 33 higher than 0.37 at 400°C. Therefore, the HF-BITV-0.02 ceramics seem to be good candidate for lead-free high-temperature piezoelectric materials.