Temperature dependence of piezoelectric properties of sputtered AlN on silicon substrate

Abstract

We report for the first time the temperature dependence of the piezoelectric coefficient d 33 of the aluminum nitride (AlN) film measured at temperatures up to 300 °C. A highly c-axis oriented AlN film was successfully deposited on a polycrystalline silicon/silicon dioxide/silicon wafer by a reactive sputtering technique to form a piezoelectric uni-morph actuator. A scanning laser Doppler vibrometer was used to measure the picometer level displacement of the actuator at 20 kHz at different temperatures. The piezoelectric coefficient d 33 has a constant value at temperatures ranging between 20 °C and 300 °C.