Telecommunication Wavelengths Research Articles

Topologically Protected Parametric Wavelength Conversion in a Valley Hall Insulator

AbstractNonlinear phenomena are investigated in a topological photonic valley Hall insulator (VHI) using a Kagome system designed to have localized topological boundary state (TBS) at telecommunications wavelengths. Valley Hall topologically protected nonlinear phenomena are demonstrated. Similar transmission properties and parametric wavelength conversion of up to −12 dB are experimentally achieved using sub‐milliwatt average powers in a zigzag interface without back‐scattering, compared with a straight interface. Furthermore, a 7 dB slow light enhancement is observed in the conversion efficiency near the red edge in the transmission band of the boundary state, demonstrating how slow light‐induced backscattering may be circumvented by leveraging the topologically protected boundary state. A Kerr‐induced delocalization of the valley Hall topological state (VHTS) is further experimentally observed, which can be harnessed to control the properties of topological edge states.

Synchronized source of indistinguishable photons for quantum networks

We present a source of indistinguishable photons at telecom wavelength, synchronized to an external clock, for the use in distributed quantum networks. We characterize the indistinguishability of photons generated in independent parametric down-conversion events using a Hong-Ou-Mandel interferometer, and show non-classical interference with coalescence, C = 0.83(5). We also demonstrate the synchronization to an external clock within sub-picosecond timing jitter, which is significantly shorter than the single-photon wavepacket duration of ≈ 35 ps. Our source enables scalable quantum protocols over multi-node, long-distance optical networks using network-based clock recovery systems.

Time-bin entanglement at telecom wavelengths from a hybrid photonic integrated circuit

Mass-deployable implementations for quantum communication require compact, reliable, and low-cost hardware solutions for photon generation, control and analysis. We present a fiber-pigtailed hybrid photonic circuit comprising nonlinear waveguides for photon-pair generation and a polymer interposer reaching 68dB\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${68}\\,\\hbox {dB}$$\\end{document} of pump suppression and photon separation based on a polarizing beam splitter with >25dB\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$>{25}\\,\\hbox {dB}$$\\end{document} polarization extinction ratio. The optical stability of the hybrid assembly enhances the quality of the entanglement, and the efficient background suppression and photon routing further reduce accidental coincidences. We thus achieve a 96-8+3%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\left( 96_{-8}^{+3}\\right) \\%$$\\end{document} concurrence and a 96-5+2%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\left( 96_{-5}^{+2}\\right) \\%$$\\end{document} fidelity to a Bell state. The generated telecom-wavelength, time-bin entangled photon pairs are ideally suited for distributing Bell pairs over fiber networks with low dispersion.

Waveguide-integrated twisted bilayer graphene photodetectors

Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W–1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s–1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

Highly oriented single-crystalline gold quantum-dot metamaterials as prospective materials for photonics

Miniaturization of optical devices is a modern trend essential for optoelectronics, optical sensing, optical computing and other branches of science and technology. To satisfy this trend, optical materials with a small footprint are required. Here we show that extremely thin, flat, nanostructured gold films made of highly oriented single-crystalline gold quantum-dots can provide elements of topological photonics in visible light and be used as high-index dielectric materials in the infrared part of the spectra. We measure and theoretically confirm the presence of topological darkness and associated phase singularities in studied gold films of thickness of below 10 nm placed on MgO substrates in the red part of the spectrum. At telecom wavelengths, the fabricated gold metasurface behaves as a dielectric with the refractive index of n≈2.75 and the absorption coefficient of k≈0.005.

Long infrared detector based on Se-hyperdoped black silicon

Infrared (IR) detectors play crucial roles in various applications. A significant milestone in advancing the next-generation low-cost silicon technology is the enhancement of hyperdoped black silicon (b-Si) photodetectors, particularly within the IR wavelength range. In this study, highly selenium (Se)-doped b-Si photodetectors. Through the optimization of laser parameters and the application of SiO2 passivation, significant enhancements were achieved in responsivity (R), external quantum efficiency, and specific detectivity (D*) within the long-wave IR range, culminating in a D* of 1.3 × 1012 Jones at 9.5 μm. Additionally, the Se: b-Si photodetectors maintain a D* of approximately 1.3 × 1011 Jones at critical optical telecommunications wavelengths of 1.3 μm and 1.5 μm. These results significantly contribute to the advancement of IR photodetector technology and provide a foundation for the development of highly efficient, low-cost, and broadband IR detectors for Si photonic applications.

Broadband silicon nitride integrated polarization rotators at 780 nm

Polarization management, and in particular polarization rotation, is becoming increasingly important for photonic integrated circuits (PICs). While fiber-optic networks are generally polarization insensitive, the large aspect ratio of high-index-contrast PIC waveguides leads to a large polarization-dependent response of integrated components such as waveguides, optical cavities, couplers, etc. Although foundry-processed polarization rotators operating at telecom and datacom wavelengths (C- and O-band) have been demonstrated, to date, there have been few reports of devices operating at shorter wavelengths. This work demonstrates silicon nitride (SiN) polarization rotators operating from λ=700-1000 nm (the I/Z-band) that take advantage of optical coupling between two waveguiding layers in a standard foundry process. We demonstrate a broadband white-light polarization measurement setup that enables precise characterization of the polarization-dependent transmission of photonic waveguide devices. Measurements on foundry-processed devices confirm full TE-to-TM rotation exhibiting a maximum polarization extinction ratio (PER) approaching 20 dB (limited by our measurement setup), and an exceptionally large bandwidth of up to 160 nm with an insertion loss less than 0.2 dB. Beam propagation method (3D-BPM) simulations show good agreement with experimental data and enable the device parameters to be adjusted to accommodate different operating wavelengths and geometries with no changes to the existing foundry process. This work opens up opportunities for applications in quantum information and bio-sensing where operation at λ<1000nm is needed.

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.

The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.

High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band.

Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.

Deterministic storage and retrieval of telecom light from a quantum dot single-photon source interfaced with an atomic quantum memory.

A hybrid interface of solid-state single-photon sources and atomic quantum memories is a long sought-after goal in photonic quantum technologies. Here, we demonstrate deterministic storage and retrieval of light from a semiconductor quantum dot in an atomic ensemble quantum memory at telecommunications wavelengths. We store single photons from an indium arsenide quantum dot in a high-bandwidth rubidium vapor-based quantum memory, with a total internal memory efficiency of (12.9 ± 0.4)%. The signal-to-noise ratio of the retrieved light field is 18.2 ± 0.6, limited only by detector dark counts.

Silicon Nanoantennas for Ultra‐Compact, High‐Speed and Low‐Power Consumption Electro‐Optic Modulators

AbstractTo keep pace with the expanding data capacity in modern communications and increasing on‐chip integration density, it is highly desirable to have electro‐optic modulators featured with compact footprint, large modulation bandwidth, low energy consumption, and full complementary metal‐oxide‐semiconductor (CMOS) compatibility. Here, this work experimentally demonstrates a high‐speed electro‐optic modulator in the telecommunication wavelength range made of a 1D chain resonator of Mie‐resonant silicon nanoparticles. The modulator exploits the plasma dispersion effect and works in the carrier depletion configuration. The resulting large modulation bandwidth over 40 GHz and low energy consumption of 23 fJ bit−1 are attributed to its ultra‐compact footprint of 10 µm2. The open eye diagrams are measured up to 40 Gbits s−1. The modulators are fabricated at wafer level by a silicon photonic foundry using CMOS‐compatible process. This modulator shows promise for achieving higher integration density and larger modulation bandwidth. It can be added to the existing on‐chip device building blocks library and used for a wide range of applications, including data communication, quantum photonics, and non‐reciprocal optics.

Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures

The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm antibunching. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 109 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 1011 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.

Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with p-i-n diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90.5% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs.

λ/20-Thick cavity for mimicking electromagnetically induced transparency at telecommunication wavelengths

λ/20-Thick cavity for mimicking electromagnetically induced transparency at telecommunication wavelengths

A versatile photon counting system with active afterpulse suppression for free-running negative-feedback avalanche diodes.

InGaAs/InP-based negative-feedback avalanche diodes (NFADs) have been demonstrated to be an excellent option for photon detection at telecom wavelengths in quantum communication applications, where photon arrival times are random. However, it is well-known that the operation of NFADs at low temperatures (193K or below) is crucial to minimize the effects of afterpulsing and high dark count rates (DCRs). In this work, we present a new versatile readout electronics system with active afterpulse suppression that also offers flexible cooling options. Through the characterization of two NFAD detectors from Princeton Lightwave, Inc. and a thorough evaluation of our electronics' performance under various operating conditions, we demonstrate the effectiveness of this readout system in improving the performance of NFAD-based photon detectors. At the optimal bias for NFADs, our electronics were able to significantly reduce the afterpulsing probability by a factor of 200 for dead times ranging from 5 to 20µs following each detection event. This helps to keep the total DCRs at around 100 counts per second or less for a 20µs hold-off time. The versatility of our detection system makes NFADs a cost-effective alternative to more complex detectors, such as superconducting nanowire single-photon detectors, in the research of long-distance quantum communications and low-noise single photon detectors at telecommunication wavelengths.

Voltage-tunable graphene-InP schottky photodetector with enhanced responsivity using plasmonic waveguide integration

In this work, we propose and theoretically investigate a novel side-illuminated graphene Schottky photodetector (SIGS-PD) integrated on an InP waveguide platform suitable for the telecommunication wavelength of 1.55 μm. Bilayer graphene is positioned to absorb the transverse magnetic (TM) mode, with an InP substrate forming a Schottky junction to enable electrical connectivity and carrier separation. Through electrostatic gating, the graphene Fermi level is actively tuned to reach an epsilon-near-zero condition of 0.51 eV, transitioning the optical properties from dielectric to metallic. This supports reconfigurable plasmonic modes confined within the subwavelength graphene layer, interacting strongly with the TM optical mode. Responsivity of TM mode is enhanced 10 × TE mode reaching 1.24 A W−1 at the epsilon-near-zero point for the wavelength of 1.55 μm due to discontinuity and localization of the perpendicular electric field. The maximum responsivity is achieved at reverse bias of 4.5 V for device lengths under 4 μm. Dark current is suppressed to 10−15 A by the rectifying Schottky junction. An internal specific detectivity of 9.6 × 1012 Jones is predicted along with >25 GHz bandwidth, exploiting combined benefits of plasmonic enhancement and electrical transport control in the hybrid graphene-InP platform. The voltage-tunability of the graphene optical properties provides a pathway to dynamically optimize device performance. This work demonstrates a route towards high-responsivity and high-speed graphene photodetectors seamlessly integrated with photonic integrated circuits.

Photon Phase Delay Sensing with Sub-Attosecond Uncertainty.

The application of statistical estimation theory to Hong-Ou-Mandel interferometry led to enticing results in terms of the detection limit for photon reciprocal delay and polarisation measurement. In the following paper, a fully fibre-coupled setup operating in the telecom wavelength region proves to achieve, for the first time, in common-path Hong-Ou-Mandel-based interferometry, a detection limit for photon phase delay at the zeptosecond scale. The experimental results are then framed in a theoretical model by calculating the Cramer-Rao bound (CRB) and, after comparison with the obtained experimental results, it is shown that our setup attains the optimal measurement, nearly saturating CRB.

Research on silicon waveguide crossing for optical logic operations at telecommunication wavelength

Research on silicon waveguide crossing for optical logic operations at telecommunication wavelength

Ultralow-loss optical interconnect enabled by topological unidirectional guided resonance.

Grating couplers that interconnect photonic chips to off-chip components are crucial for various optoelectronics applications. Despite numerous efforts in past decades, the existing grating couplers are still far from optimal in energy efficiency and thus hinder photonic integration toward a larger scale. Here, we propose a strategy to achieve ultralow-loss grating couplers by using unidirectional guided resonances (UGRs), suppressing the useless downward radiation with no mirror on the bottom. By engineering the dispersion and apodizing the geometry of grating, we experimentally realize a grating coupler with a record-low loss of -0.34 dB and 1-dB bandwidth exceeding 30 nm at the telecom wavelength of 1550 nm and further demonstrate an optic via with a loss of only -0.94 dB. Given that UGRs ubiquitously exist in a variety of grating geometries, our work sheds light on a systematic method to achieve energy-efficient optical interconnect and paves the way to large-scale photonic integration.