TaN Resistive Random Access Memory Research Articles

The Role of Oxygen Vacancies on Switching Characteristics of TiO(x) Resistive Memories.

Using oxygen vacancy rich (VO-rich) TiO(x) dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the Ni/VO-rich TiO(x)/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiO(x) after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.

Interface‐engineered resistive memory using plasma‐modified electrode on polyimide substrate

AbstractIn this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma‐modified electrode. The low sub‐mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high‐temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta–N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high‐temperature current distribution.magnified image(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

$\hbox{Ni/GeO}_{x}\hbox{/TiO}_{y}\hbox{/TaN}$ RRAM on Flexible Substrate With Excellent Resistance Distribution

Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9 μA at 3 V; - 1μA at -3 V), 105 cycling endurance, and good retention at 85°C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Narrow current distribution, good endurance, and low 28 μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$/HfON/TaN RRAM

Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 106 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.

Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN resistive random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 106 cycling endurance are realized.