Abstract
Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 106 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
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