Abstract
Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9 μA at 3 V; - 1μA at -3 V), 105 cycling endurance, and good retention at 85°C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
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