Type IIa diamonds are the most promising gem grade, optical and electronic grade materials with high quality and low defects, however natural type IIa diamonds are rare and therefore the synthetic methods to obtain the high quality type IIa diamonds have been a hot issue. Nitrogen getters play a crucial role in the synthesis of type IIa high temperature high pressure (HPHT) diamonds crystals by reacting with the nitrogen in the system and effectively removing it from the growth process. However, the occurrence state of nitrogen getter introduced after diamond crystal growth remains to be investigated. In this study, a group of HPHT synthetic diamond crystals with different mass fractions of Ti as a nitrogen getter were examined by scanning electron microscopy coupled with energy dispersive spectrometer (SEM-EDS) and X-ray fluorescent spectroscopy (micro-XRF) to observe the occurrence state of the nitrogen getter Ti within the synthetic diamond crystal, it was found that at the end of crystal growth, There are two forms of Ti present in the process: (i) Ti reacts with C to form TiC, which was deposited on the surface of the diamond crystal in the dendritic pattern, and (ii) Ti enters the diamond crystal to form metallic inclusions. This study provides reliable data to support a comprehensive analysis of the effect of Ti as a nitrogen getter in the growth procession of HPHT synthetic diamond crystal, and it will have a positive effect on the development of synthetic diamond technology.