Switching Ratio Research Articles

Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

It is well-known that memristive devices can be applied to brain-like parallel computing, but the interface effects have an indelible impact on memristive performance. In this work, two memristive devices with Ag/CTO/SMTO/Ti and Ag/SMTO/CTO/Ti structures were fabricated based on the heterojunctions between CaTiO3 (CTO) and Mn-doped SrTiO3 (SMTO). By comparison, the Ag/CTO/SMTO/Ti device shows relatively improved memristive characteristics with the optimum sweeping voltage of 1.2 V and the switching ratio of ∼12. That is to say, changing the heterojunction order between CTO and SMTO can regulate the memristive behaviors of the device because the interface effect caused by heterojunction contact has influence on the particle migration, resulting in different rates of conductive filaments formation, so that the memristive characteristics of the device can be regulated. Finally, the resistive switching (RS) characteristics of the device are explained by in-depth mechanism analysis based on fitting experimental data. Therefore, this work not only provides a feasible method for improving the memristive characteristics of the device, but also helps to understand the influence of the interface effect on the particles motion, thereby laying the foundation for the preparation of high-capacity and efficient memristive device in artificial intelligence (AI) applications.

Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO3 Films.

Self-powered photodetectors (PD) based on ferroelectric materials have gained huge attention because of the spontaneous polarization and unique photovoltaic effect. However, the low photocurrent values and switch ratio of the ferroelectric materials limit their further practical applications in a wide temperature range. In this study, the self-powered ZnO nanofiber array/BaTiO3 (ZnO-NFA/BTO) PD was fabricated by high-ordered ZnO-NFA via electrospinning method deposited on a 300 nm BTO film synthesized using sol-gel method. The electrospinning can prepare ZnO-NFAs with a controllable diameter (100 nm) and orientation and is directly deposited on the quartz at a large scale, which simplifies the fabrication process. This device possesses a greater on/off ratio of 2357 at zero bias than that of BTO PD (3.33) and the ZnO-NFA PD (125) at 0.2 V. The highest responsivity and specific detectivity are 1.41 mA W-1 and 1.48 × 109 Jones at 368 nm under 0 V bias, respectively, which is enhanced about three magnitudes than the pristine BTO PD (1.21 μA W-1 and 1.02 × 109 Jones). The photocurrent of the ZnO-NFA/BTO PD strongly depends on the temperature. After the cooling system and prepolarization processing are both introduced, the largest light current (475 nA) and photovoltaic plateaus (585 nA) are enhanced by about 4417 and 4278% under 368 nm at a power intensity of 4.46 mW cm-2 at 0 °C, respectively. The enhancement of photocurrent is associated with a ferro-pyro-phototronic effect, evidenced by enhanced ferroelectric polarization. The ZnO-NFA/BTO PD can detect weak signals at low power intensity with a wide temperature range of 0-100 °C under 0 V bias. The self-powered ZnO-NFA/BTO PD provides a new and promising way to fabricate high-performance and low-cost photodetectors from inorganic perovskite materials.

Fin field-effect-transistor engineered sensor for detection of MDA-MB-231 breast cancer cells: A switching-ratio-based sensitivity analysis.

The present study describes the utilization of a gallium-arsenide gate-stack gate-all-around (GaAs-GS-GAA) fin field-effect transistor (FinFET) to accomplish the electrical identification of the breast cancer cell MDA-MB-231 by monitoring the device switching ratio. The proposed sensor uses four nanocavities carved beneath the gate electrodes for enhanced detection sensitivity. MDA-MB-231 (cancerous) and MCF-10A (healthy) breast cells have a distinct dielectric constant, and it changes when exposed to microwave frequencies spanning across 200 MHz and 13.6 GHz, which modifies the electrical characteristics, allowing for early diagnosis. First, a percentage shift in the primary DC characteristics is presented to demonstrate the advantage of GS-GAA FinFET over conventional FinFET. The sensor measures the switching-ratio-based sensitivity, which comes out to be 99.72% for MDA-MB-231 and 47.78% for MCF-10A. The sensor was tested for stability and reproducibility and found to be repeatable and sufficiently stable with settling times of 55.51, 60.80, and 71.58 ps for MDA-MB-231 cells, MCF-10A cells, and air, respectively. It can distinguish between viable and nonviable cells based on electrical response alterations. The possibility of early detection of cancerous breast cells using Bruggeman's model is also discussed. Further, the impact of biomolecule occupancy and frequency variations on the device sensitivity is carried out. This study also explains how to maximize the sensing performance by adjusting the fin height, fin width, work function, channel doping, temperature, and drain voltage. Lastly, this article compared the proposed breast cancer cell detectors to existing literature to evaluate their performance and found considerable improvement. The findings of this research have the potential to establish GaAs-GS-GAA FinFET as a promising contender for MDA-MB-231 breast cancer cell detection.

High performance mechano-optoelectronic molecular switch

Highly-efficient molecular photoswitching occurs ex-situ but not to-date inside electronic devices due to quenching of excited states by background interactions. Here we achieve fully reversible in-situ mechano-optoelectronic switching in self-assembled monolayers (SAMs) of tetraphenylethylene molecules by bending their supporting electrodes to maximize aggregation-induced emission (AIE). We obtain stable, reversible switching across >1600 on/off cycles with large on/off ratio of (3.8 ± 0.1) × 103 and 140 ± 10 ms switching time which is 10-100× faster than other approaches. Multimodal characterization shows mechanically-controlled emission with UV-light enhancing the Coulomb interaction between the electrons and holes resulting in giant enhancement of molecular conductance. The best mechano-optoelectronic switching occurs in the most concave architecture that reduces ambient single-molecule conformational entropy creating artificially-tightened supramolecular assemblies. The performance can be further improved to achieve ultra-high switching ratio on the order of 105 using tetraphenylethylene derivatives with more AIE-active sites. Our results promise new applications from optimized interplay between mechanical force and optics in soft electronics.

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

AbstractAn analytical drain current model for double gate junctionless accumulation mode negative capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the merits of junctionless accumulation mode and negative capacitance effect such as fabrication feasibility, low power dissipation, and reduced degradation in mobility. The novelty manifested in our work is because of the incorporation of the JAM structure in ferroelectric‐based negative capacitance FET. The benefit of JAM over existing FETs is that it combines the benefits of the junctionless transistor (JLT) and conventional FETs. It avoids excessive parasitic resistance due to stronger doping in the source and drain areas, resulting in higher conductivity and better characteristics than JLT. An analytical surface potential and threshold voltage have been developed using Poisson's equation and Landau Khalatnikov's (L‐K) equation. The drain current is then determined by integrating the mobile charge using the Pao–Sah integral. Various critical parameters such as surface potential, gain, capacitance, mobile charge density, drain current, threshold voltage, subthreshold swing, transconductance, and the switching ratio have been assessed extensively by varying ferroelectric layer and channel layer thicknesses, respectively. The ON current increases with the increase in ferroelectric thickness due to the voltage amplification given by the ferroelectric layer, and the switching curve gets steeper. The analytical modeling is done in MATLAB, and its comparison is made with the TCAD numerical simulation. The obtained analytical results and the numerical simulation results correspond well.

Preload-Induced Switchable Adhesion.

Animals with robust attachment abilities commonly exhibit stable attachment and convenient detachment. However, achieving an efficient attachment-detachment function in bioinspired adhesives is challenging owing to the complexity and delay of actuators. In this study, a class of multilayer adhesives (MAs) comprising backing, middle, and bottom layers is proposed to realize rapid switching by only adjusting the preload. At low preload, the MAs maintain intimate contact with the substrate. By contrast, a sufficiently large preload results in significant deformation of the middle layer, causing underside buckling and reducing adhesion. By optimizing the structural parameters of the MAs, a high switching ratio (up to 136×) can be achieved under different preloads. Furthermore, the design of the MAs incorporates a film-terminated structure, which prevents the embedding of dirt particles, simplifies cleaning, and maintains the separation and uprightness of the microstructures. Consequently, the MAs demonstrate practical potential for simple and efficient transportation applications, as they achieve switchable adhesion through their structure, exhibiting a high switching ratio and fast switching.

Ion effects on salt-in-water electrolyte gated polymer electrochemical transistors

Aqueous electrolyte-gated polymer transistors attracted intensive attention in the field of implantable bionics and biochemical sensors due to their simple fabrication process, low operating voltage, and biocompatibility of salt-in-water. In these devices, under gate bias, the free cations and anions in the water solution gate will drift toward the gate electrode or electrolyte/active layer interface, respectively. Under high enough bias, some ions might insert into the active layer and dope the polymer in electrochemical transistors. Therefore, the ions play a crucial role in the salt-in-water electrolyte-gated polymer electrochemical transistors. In this work, the poly (3-hexylthiophene-2, 5-diyl) (P3HT) electrochemical transistors based on different cations and anions contained in the aqueous electrolytes were characterized. The various measurements imply that the larger perchlorate ions can penetrate the P3HT film much more heavily than the smaller chloride ions and the electrochemical bulk doping occurs in the perchlorate devices while the chloride devices involve surface doping. This is why the perchlorate ions can electrochemically dope the P3HT film more heavily than the chloride ions, leading to the larger transconductance and switching ratio. The various anions show different electrochemical doping processes, leading to various electrical hysteresis characteristics. In addition, the cations can affect the doping relaxation process for the electrochemical transistors. Both cation and anion effects on the device performance and doping/dedoping processes have been investigated in this work.

Selective Gas Sensing under a Mixed Gas Flow with a One-Dimensional Copper Coordination Polymer.

Structural changes of the coordination polymer associated with gas adsorption (gate opening-type adsorption) can be linked to bulk physical properties such as magnetism, electrical conductivity, and dielectric properties. To enable real-space sensing applications, it is imperative to have a system where the selective adsorption of mixed gases can be correlated with physical properties. In this report, we demonstrate that a crystalline sample of one-dimensional (1D) coordination polymer exhibits selective CO2 adsorption while simultaneously displaying dielectric switching behavior in a mixed N2/CO2 gas environment. In the crystal of {[Cu2(2-TPA)4(pz)]·CH3CN}n (1·CH3CN), where 2-TPA and pz are 2-thiophencarboxylate and pyrazine, respectively, paddle wheel-type units of [Cu2(2-TPA)4] are bridged by pz, forming a 1D chain structure. One of the two crystallographically independent 2-TPA units was interacted with the pz moiety of the adjacent 1D chain by π···π interactions, forming a two-dimensional (2D) layer parallel to the ab plane. Activated 1 shows selective CO2 adsorption by a gate opening-type adsorption mechanism, indicating that the CO2 adsorption process is accompanied by a structural change. The change in the real part of dielectric permittivity (ε') under the mixed N2/CO2 gas flow is a result of the selective CO2 adsorption, which was supported by the enthalpy changes (ΔH) associated with CO2 adsorption in two methods: CO2 adsorption isotherms and temperature-dependent measurements of ε' under a mixed N2/CO2 gas flow. The calculated ΔH values were found to be in good agreement across both methods. The CO2 ratio in the mixed N2/CO2 gas flow increased, and the switching ratio of ε' (Δε') also increased. Notably, Δε' exhibited a marked increase beyond the pressure required for gate opening adsorption.

Low-loss Optical Switching Based on Phase-change Material Sb2Se3 in a Micro-ring Resonator

In the past research, optical interconnection has successfully developed into an emerging technology due to its compatibility with CMOS, where an efficient and reconfigurable optical switch operating at ultra-low programming energy is a key element to realize optical signal routing and switching. Here we numerically demonstrate an optical switch operating in the telecommunications band, which shows a 20 dB switch ratio and insertion loss of 0.8 dB. The device is implemented in waveguide-coupled micro-ring resonator (MRR) using the phase materials Sb2Se3, which exhibits high contrast in its optical properties upon transitions between its crystalline and amorphous structural phases.

Sensitivity extraction of step shape double gate (SSDG) TFET biosensor considering non-ideal scenario

In this work, we have implemented the step-shape double gate Tunnel FET (SSDG-TFET) biosensor, where nanogaps are embedded to work it as a biosensor. In these nanogaps, the biomolecules are inserted to work it as biosensor. By increasing the dielectric constant (k) of the biomolecules from 5 to 12, the sensitivity (Sn) is retrieved when neutral and positive/negative biomolecules are present. The influence of k on switching ratios (ION/IOFF, ION/IAMBP) are highlighted under the incidence of neutral biomolecules. Furthermore, the sensitivity is extracted for altered step profiles such as increasing, decreasing, concave, and convex for two different fill factor (FF) of 30% and 60%. The obtained Sn is in the order of 1010 at k = 12 for neutral biomolecules. The comparison of Sn for the SSDG-TFET biosensor with previously published literature is highlighted. Finally, the Sn of SSDG-TFET biosensor for various protein based materials are extracted.

Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

Non-toxic, stable Cs3Bi2Br9 halide perovskite films prepared using a one-step solution method have become the active layer of resistive switching memory. Here, we control the nucleation and growth of Cs3Bi2Br9 perovskite by introducing an appropriate amount of HBr to adjust the supersaturation of the perovskite precursor solution, thus improving the film formation quality and optimizing the device performance. The memory prepared for this film has a significant bipolar resistive behavior with a high switching ratio of 105, a cycle time of 300 and a retention time of 104 s. In addition, the current transient response of the device under pulsed voltage is investigated. By different the pulse voltage parameters (pulse amplitude, duration and time interval) to study the variation of the device current value, the term "TJUT" is finally encoded and decoded using different the number of pulses and repetitions.

Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

The resistive switching (RS) behavior of multilayered ReRAM devices is typically influenced by two aspects: the intrinsic properties of the dielectric multilayer, and other extrinsic contributions. In this study, we deposited and investigated bi-layered memories incorporating ZnO and HfO2 dielectrics. Different stacking sequences of the two oxides (ZnO/HfO2 and HfO2/ZnO) were employed to explore the intrinsic contribution of the bilayer microstructure, while different top electrode configurations (Pt and Ti) were utilized to demonstrate the extrinsic impact. All devices exhibit characteristic bipolar RS behavior, showcasing their functionality. But interestingly, the device with a Pt top electrode displays digital RS behavior, while the one with a Ti top electrode exhibits analog RS behavior. The completely different switching types observed during the reset process of the ZnO-HfO2 hybrid resistive memories are attributed to different interface charge migration process and structural characteristic. And as compared to the tailoring effect of stacking sequences (bilayer microstructure and oxide/oxide interface), the tailoring effect of top electrode configuration (electrode materials and oxide/electrode interface) is much stronger. Based on the latter, the switching ratio can be remarkably improved by at least two orders of magnitude, the reset voltage (energy consumption) can also be significantly reduced, and other discussed switching parameters can also show greater improvement. The comprehensive comparative analysis of intrinsic and extrinsic contributions provides valuable insights for exploring the RS mechanism and optimizing the design of bi-layered memory devices.

GaSb/GaAs Type‐II heterojunction GAA‐TFET with core source for enhanced analog/RF performance and reliability

AbstractFor the first time, a novel source extension heterojunction gate‐all‐around tunnel FET (SE‐GAA‐TFET) is proposed and examined using Synopsys TCAD simulator in this manuscript. SE‐GAA‐TFET is found to exhibit improved performance in terms of various analog/RF and DC parameters. As channel/source (C/S) interface and electric field exerted by gate are perpendicular to each other, radius of channel is downscaled to enhance electric filed, without reducing area of the tunneling. Furthermore, the presence of GaSb/GaAs heterojunction at C/S interface leads to reduction in the effective band overlap, which helps a great number of mobile charges to tunnel through C/S boundary at ON‐state. The consequences of variation in different geometrical metrics are evaluated to optimize the device performance. SE‐GAA‐TFET is found to offer a current switching ratio (CSR) of ~1013 along with 32.2 mV dec−1 of average sub‐threshold swing (SSAVG). Furthermore, improvement in transconductance and parasitic capacitance boost the cut‐off frequency of SE‐GAA‐TFET up to 37 GHz. Next, both positive and negative traps are introduced at S/C interface and the study reveals that there is no much deviation in parameters of the transfer characteristics like ION, SSAVG, and IOFF of SE‐GAA‐TFET. Next, proper benchmarking is done to compare the performance of the SE‐GAA‐TFET with similar devices available in literature and it is found that proposed SE‐GAA‐TFET exhibits better DC performance due to improved electrostatic behavior. Finally, SE‐GAA‐TFET is found to offer better fall time along with full‐voltage swing when deployed in a resistive load inverter.

Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films

The ferroelectric memristor, as a new type of nonvolatile memory, has a broad prospect in the fields of information storage, exchange, and neural computing. Nowadays, it is still a challenge to achieve ferroelectric memristor with high resistive switching effect. In this work, epitaxial Ca-doped Pb(Zr0.40Ti0.60)O3 films embedded various concentrations Au nanoparticles (NPs) (Abbreviated as Au-PCZT) were deposited on the Nb:SrTiO3 (NSTO) substrate to form Au-PCZT/NSTO heterostructures. On the one hand, adding appropriate Au NPs into the PCZT films can improve the leakage current. When Au NPs capture electrons, the current in the high resistance state will be decreased due to the coulomb blocking effect. On the other hand, the ferroelectric polarization still maintains at a good level. Eventually, the resistive switching (RS) on/off ratio can reach 106 by embedding 3 mol% Au NPs. Compared with the pure PCZT thin films, the resistance-variable switching ratio is improved by two orders of magnitude. In addition, multi-level data storage can be realized under different bias voltages. Our results provide a feasible way to achieve high-on/off-ratio ferroelectric memristors with multi-level data storage capabilities.

Reversible Thermal Conductivity Switching Using Flexible Metal-Organic Frameworks.

The ability to control thermal transport is critical for the design of thermal rectifiers, logic gates, and transistors, although it remains a challenge to design materials that exhibit large changes in thermal conductivity with switching ratios suitable for practical applications. Here, we propose the use of flexible metal-organic frameworks, which can undergo significant structural changes in response to various stimuli, to achieve tunable switchable thermal conductivity. In particular, we use molecular dynamics simulations to show that the thermal conductivity of the flexible framework Fe(bdp) (bdp2- = 1,4-benzenedipyrazolate) becomes highly anisotropic upon transitioning from the expanded to the collapsed phase, with the conductivity decreasing by nearly an order of magnitude along the direction of compression. Our results add to a small but growing number of studies investigating metal-organic frameworks for thermal transport.

Nanosheet Field Effect Transistor Device and Circuit Aspects for Future Technology Nodes

Moore’s law states that the technical innovations are being absorbed already. The device’s controllability has dramatically improved since moving from a straightforward MOSFET constructed with a single control gate to one with many control gates. In this research paper, the device-level simulation of vertically stacked GAA nanosheet FET is performed, for which the various geometrical variations are calibrated. This research paper examines the impact of these geometrical variations on the device’s performance. The most prominent parameters like I ON, I OFF, SS, DIBL, switching ratio, and Threshold voltage values are analyzed. For the device to be considered to have better performance I ON should be maximum, I OFF should be minimum. Hence to obtain this the thickness of the nanosheet is varied on the scale of 5 nm to 9 nm, and the width is varied from 10 nm to 50 nm. The device simulation and analysis are performed using the Visual TCAD−3D Cogenda tool.

Study of Large-area Flexible Transistor Array Fabrication

In recent years, the rapid preparation of transistor devices and the control of manufacturing costs have been the focus of researchers. Conventional transistor semiconductor films are usually applied by spin coating or magnetron sputtering. However, the spin coating method tends to cause material waste. Based on this, a method of screen printing semiconductor layers is proposed. In this paper, P3HT ink was obtained by dissolving a mixture of P3HT and ethyl cellulose in a toluene solution. The screen printing technique was used to successfully obtain the semiconductor layer, which in turn successfully printed the transistor array. The dielectric layer is the screen-printed ionic gel and the electrode is vaporized gold electrode, resulting in a 100% success rate of transistors. The operating performance of the device is more stable than that of the spin-coating method, and the switching ratio of the obtained device is stable above 104 when the gate voltage is -3–3 V, -4–4 V, and -5–5 V, respectively. This approach offers a new way of thinking about flexible printed electronics.

Enhanced synaptic weight in ferroelectric PbZr0.52Ti0.48O3 thin film by inserting semiconductor Sr2IrO4 layer

Ferroelectric memristors based on metal/ferroelectric/semiconductor structure are suitable for the simulation of non-volatile synaptic weight due to the high on/off switching ratio, low energy consumption, high precision and fast working speed. Especially, the characteristics of the semiconductor electrode are closely related to the synaptic performance of the device. Here, ferroelectric memristors (PbZr0.52Ti0.48O3/Nb:SrTiO3 and PbZr0.52Ti0.48O3/Sr2IrO4) with different semiconductor electrodes were fabricated by introducing Sr2IrO4 (SIO) thin film. Various plasticity have been successfully simulated under different electrical impulses, such as inhibitory postsynaptic current (IPSC), paired pulse depression (PPD), spike rate dependent plasticity (SRDP) and spike time dependent plasticity (STDP) in the two devices. Moreover, the absolute values of synaptic weight and the relaxation time of PbZr0.52Ti0.48O3 (PZT)/SIO have been significantly improved. This may be attributed to the fact that the small work function of SIO increases the variation of the interface barrier at the device. And the artificial synaptic device based on PZT/SIO is used to achieve the application of Morse code. This study plays an important role in achieving efficient storage and computation for neuromorphic computing.

Ternary Heterostructures Based on BaTiO3/MoO3/Ag for Highly Efficient and Reusable Photocatalytic Applications

AbstractThis work shows the fabrication of an efficient ternary heterostructure photocatalyst by integrating ferroelectric BaTiO3 (BTO) as the bottom layer, semiconductor MoO3 as the middle layer and plasmonic silver nanoparticles (Ag NPs) as the top layer, respectively. The BaTiO3/MoO3/Ag (BMA) heterostructure exhibits a higher photodegradation and photocatalytic efficiency of 100% for rhodamine B (RhB) dye under a UV–Visible light illumination of 60 min when compared with its binary heterostructure counterparts BaTiO3/Ag (BA) and MoO3/Ag (MA). The increased photocatalytic activity in BMA heterostructure is attributed to its enhanced interfacial electric field due to the electric double layer formation at BTO‐MoO3 and MoO3‐Ag interfaces. The higher blueshift in the surface plasmon resonance (SPR) peak observed for the BMA heterostructure clearly indicates an increased electron transfer toward the top Ag NPs layer under optical illumination. The higher resistive switching (RS) ratio, the increased difference in voltage minima, and the improved photocurrent generation, as evident from the I–V characteristics, illustrate the enhanced charge carrier generation and separation in BMA heterostructure. A smaller arc radius observed for the Nyquist plot of BMA heterostructure clearly showcases its increased interfacial charge transfer (CT). The CT mechanism and reusability of the BMA heterostructure are also studied.

Enhanced temperature-responsive functions of thermal metamaterials by interface engineering

A phase-change thermal metamaterial (PCTM) has attracted a lot of attention to implement responsive thermal functions that can be adaptable to ambient environments. Temperature responsive PCTMs consisting of aligned metal backbones and phase change materials (PCMs) are capable of transforming artificial heat paths enabled by rapidly transiting thermophysical characteristics at certain temperatures. However, fabricating the PCTMs essentially involves the interfacial boundaries of different materials such as metal and PCMs, thereby degrading thermal transport between them. Moreover, while the phase of the material is altered from solid to liquid or vice versa, the instability of the interfaces inevitably occurs. Herein, we report an interface engineering of PCTMs using layer-by-layer (LbL) coating layers and nanocomposite PCMs to improve the on/off switching transition of thermal functions manipulating the heat flux in response to a specific temperature. LbL-assembled ultra-thin interfaces (multi-walled carbon nanotube (MWCNT)-polyethylenimine (PEI) layers and MWCNT-PEI-Silane layers) as interfacial thermal resistance compensators and PCM nanocomposites using graphene nanoplatelets (GNPs) are incorporated into thermal shifters based on stainless steel backbones. The LbL interfaces reduce the physical voids and phonon scattering between PCMs and metal surfaces while the GNP fillers increase the thermal conductivity of the PCMs in solid phases. The engineered PCTMs highly amplify the on/off switching ratio of thermal shifter unit cells and enhance overall thermal functions of temperature responsive TM modules (shield, concentrator, diffuser, and inverter). This work can pave a way for feasible solutions of interfacial resistances and instability in TMs.