Abstract
In this study, we integrated the wide-bandgap material TiO2 as a photosensitive layer with the WSe2/2DEG heterostructure, creating a hybrid WSe2/TiO2/2DEG heterojunction. This hybrid structure significantly improves the device’s photosensitivity, exhibiting a high rectification effect and a switching ratio of 103. The photodetector shows excellent performance, with a responsivity of 0.61 A W−1 and a detectivity of up to 1.1×1011 Jones at 405 nm, along with a very fast photoresponse speed. The buried TiO2 channel allows photogenerated electrons to easily flow through the reduced barrier at the depleted region. This hybrid heterojunction holds promise for the development of high-performance photoelectric devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
