Ferroelectric Polarization Switching Research Articles

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3. Interlayer interactions engineering via selecting the stacking order in two-dimensional materials allows modulation of ferroelectric properties. Here, we report stacking-dependent ferroelectric domain walls in 2H and 3R stacked α-In2Se3, elucidating the resistance switching mechanism in ferroelectric semiconductor-metal junction devices. In 3R α-In2Se3, the in-plane movement of out-of-plane ferroelectric domain walls yield a large hysteresis window. Conversely, 2H α-In2Se3 devices favor in-plane domain walls and out-of-plane domain wall motion, producing a small hysteresis window. High electric fields induce a ferro-paraelectric phase transition of In2Se3, where 3R In2Se3 reaches the transition through intralayer atomic gliding, while 2H In2Se3 undergoes a complex process comprising intralayer bond dissociation and interlayer bond reconstruction. Our findings demonstrate tunable ferroelectric properties via stacking configurations, offering an expanded dimension for material engineering in ferroelectric devices.

Suppression of Ferroelectric Transitions by Symmetry Trapping in Dion-Jacobson-Layered Perovskites Cs(La,Nd)Nb2O7.

CsNdNb2O7 is a hybrid improper ferroelectric (HIF) where oxygen octahedral rotation modes induce spontaneous polarization. While CsLaNb2O7 is also believed to be an HIF, its polar structure and ferroelectric properties remain poorly understood. This study investigates their solid solution, CsLa1-xNdxNb2O7, by constructing a temperature-composition phase diagram using synchrotron X-ray diffractometry, first-principles calculations, and dielectric measurements. Upon cooling, the Nd-rich compositions (x = 0.5, 0.75, and 1) undergo phase transitions from a P4/mmm to a C2/m and then to a polar P21am phase. Both transition temperatures decrease as x decreases. The polar P21am phase, accompanied by ferroelectric polarization switching, is stabilized at room temperature only when x = 0.75 and 1. For La-rich compositions, the nonpolar C2/m phase remains down to room temperature without exhibiting any indication of transformation into the polar P21am phase. Theoretical calculations suggest that a symmetry trapping effect hinders the nonpolar (C2/m)-to-polar (P21am) phase transition.

Tuning leakage current and ferroelectric properties in spin-coated BiFeO3 films through Cr doping and post-annealing atmosphere control

Effective enhancement of ferroelectric properties in BiFe1-xCrxO3 films prepared via the sol-gel method is crucial. Here, by adjusting the Cr content, BiFe1-xCrxO3 films with smooth surfaces and uniform grain structures were successfully synthesized. X-ray photoelectron spectroscopy (XPS) analyses revealed that Cr doping significantly reduces the concentrations of Fe2+ and oxygen vacancies within the BFO films, thereby mitigating leakage currents and enhancing ferroelectricity. Additionally, we investigated the microstructure and electrical characteristics of BiFe0.98Cr0.02O3 thin films subjected to post-annealing in different atmospheres (N2, Air, and O2). Notably, annealing in an O2 atmosphere notably enhanced the crystallinity and grain uniformity of BiFe0.98Cr0.02O3 thin films. This treatment resulted in superior ferroelectric polarization switching behavior, achieving the highest remanent polarization (Pr = 153.1 μC/cm2) due to reduced defect densities. Our findings underscore the critical roles of Cr3+ ions and O2 annealing atmospheres in suppressing leakage currents and boosting ferroelectric properties in BFO films.

Light-Induced Complete Reversal of Ferroelectric Polarization in Sliding Ferroelectrics.

Previous experiments have provided evidence of sliding ferroelectricity and photoexcited interlayer shear displacement in two-dimensional materials, respectively. Herein, we find that a complete reversal of vertical ferroelectric polarization can be achieved within an astonishing 0.5ps in h-BN bilayer by laser illumination. Comprehensive analysis suggests that ferroelectric polarization switching originates from laser-induced interlayer sliding triggered by selective excitation of multiple phonons. The interlayer electron excitation from the p_{z} orbitals of the upper layer N atoms to the p_{z} orbitals of the lower layer B atoms produces desirable and directional interlayer forces activating the in-plane optical TO-1 and LO-1 phonon modes. The atomic motions driven by the coupling of TO-1 and LO-1 modes are coherent with ferroelectric soft mode, thus modulating the dynamical potential energy surface and resulting in ultrafast ferroelectric polarization reversal. Our work provides a novel microscopic insight into ultrafast polarization switching in sliding ferroelectrics.

Microstructure, dielectric storage, ferroelectric polarization, and non-ferroelectric resistive switching characteristics of sol–gel-derived BZT ferroelectric films with tailored Zr content

Microstructure, dielectric storage, ferroelectric polarization, and non-ferroelectric resistive switching characteristics of sol–gel-derived BZT ferroelectric films with tailored Zr content

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructures.

Exploring multiferroic materials that combine magnetic and ferroelectric properties is scientifically interesting and has important technical implications for many functions of nanoscale devices. In this work, spintronics and magnetoelectric coupling devices are proposed in two-dimensional (2D) layered ferromagnetic (FM)/ferroelectric (FE) van de Waals (vdW) heterostructures, VSeTe/Sc2CO2, employing density functional theory (DFT) calculations. The results indicate that the VSeTe/Sc2CO2 vdW heterostructure changes from a metal to a semiconductor in Sc2CO2-P↑ and Sc2CO2-P↓ polarization states. At the same time, the charge at the interface of the VSeTe/Sc2CO2 heterostructure will also be redistributed with the transformation of the ferroelectric polarization state, resulting in the change of the distribution of the electronic states near the Fermi level, and thus the change in the magnetic anisotropy energy (EMAE) of the heterostructure. Interestingly, biaxial strain brings reversibility and non-volatile regulation to the heterostructure of semiconductors and metals. The results provide an effective way to fabricate magnetoelectric coupling devices with 2D multiferroic heterostructures.

Polarization-Switchable Electrochemistry of 2D Layered Bi2O2Se Bifunctional Microreactors by Ferroelectric Modulation.

Ferroelectric catalysts are known for altering surface catalytic activities by changing the direction of their electric polarizations. This study demonstrates polarization-switchable electrochemistry using layered bismuth oxyselenide (L-Bi2O2Se) bifunctional microreactors through ferroelectric modulation. A selective-area ionic liquid gating is developed with precise control over the spatial distribution of the dipole orientation of L-Bi2O2Se. On-chip microreactors with upward polarization favor the oxygen evolution reaction, whereas those with downward polarization prefer the hydrogen evolution reaction. The microscopic origin behind polarization-switchable electrochemistry primarily stems from enhanced surface adsorption and reduced energy barriers for reactions, as examined by nanoscale scanning electrochemical cell microscopy. Integrating a pair of L-Bi2O2Se microreactors consisting of upward or downward polarizations demonstrates overall water splitting in a full-cell configuration based on a bifunctional catalyst. The ability to modulate surface polarizations on a single catalyst via ferroelectric polarization switching offers a pathway for designing catalysts for water splitting.

Unveiling the Nanoscale Dielectric Gap and Its Influence on Ferroelectric Polarization Switching in Scanning Probe Microscopy

AbstractThe dielectric gap between the scanning probe microscopy (SPM) tip and the surface of a ferroelectric using conductive atomic force microscopy and piezoresponse force microscopy (PFM) is investigated. While the gap functions as a dielectric layer, it also allows tunneling current to inject charges into the ferroelectric when a critical loading force between 10–20 µN is applied to a tip with a radius of 25 nm under a bias voltage of 0.5 V. It is observed that the permittivity of the dielectric gap determines the coercive voltage measured by the piezoresponse hysteresis loop. While such studies done in air often produce coercive voltages much larger than those studied for the same materials in capacitor‐based studies, the use of high permittivity media such as water (ɛr = 79) or silicone oil (ɛr = 2.1‐2.8) produces coercive fields that more closely match those measured in conventional capacitor‐based polarization hysteresis loop measurements. Furthermore, using water as a dielectric medium in PFM imaging enhances the accuracy in extracting the amplitude and phase data from periodically poled lithium niobate crystals. These findings provide insight into the nanoscale phenomena of polarization switching instigated by the SPM tip and provide a pathway to improved quantitative studies.

Electric-Field Manipulation of Magnetic Chirality in a Homo-Ferro-Rotational Helimagnet.

Ferro-rotational (FR) materials, renowned for their distinctive material functionalities, present challenges in the growth of homo-FR crystals (i.e., single FR domain). This study explores a cost-effective approach to growing homo-FR helimagnetic RbFe(SO4)2 (RFSO) crystals by lowering the crystal growth temperature below the TFR threshold using the high-pressure hydrothermal method. Through polarized neutron diffraction experiments, it is observed that nearly 86% of RFSO crystals consist of a homo-FR domain. Notably, RFSO displays remarkable stability in the FR phase, with an exceptionally high TFR of ≈573K. Furthermore, RFSO exhibits a chiral helical magnetic structure with switchable ferroelectric polarization below 4K. Importantly, external electric fields can induce a single magnetic domain state and manipulate its magnetic chirality. The findings suggest that the search for new FR magnets with outstanding material properties should consider magnetic sulfates as promising candidates.

Enhancement of ferroelectric properties of the Ga0.6Fe1.4O3 films by Zn,N co-doping

Multiferroic materials have attracted considerable interests due to their scientific and technological importance in advanced devices. Ga0.6Fe1.4O3 thin film exhibits ferrimagnetism above room temperature but suffers from large leakage current. To reduce the charge conduction and enhance the ferroelectric properties of Ga0.6Fe1.4O3 film, ion doping is a useful technique. In this study, we fabricated Ga0.6Fe1.4-xZnxO3/N films by substituting Zn2+ and N3- ions in Ga0.6Fe1.4O3 for Fe and O, respectively. The influence of Zn, N co-doping on the structure, leakage current, magnetic and ferroelectric properties of the films were investigated. The results indicated that the films exhibited the orthorhombic structure with the incorporation of Zn and N. All Ga0.6Fe1.4-xZnxO3/N films showed above room temperature ferrimagnetism, and the magnetization and transition temperature values decreased with Zn,N co-doping. The microscopic and macroscopic ferroelectric measurements have demonstrated the ferroelectric polarization switching of the films. The ferroelectric hysteresis loops of the Ga0.6Fe1.38Zn0.02O3/N film showed the remnant polarization of ∼0.46 μC/cm2 with the coercive field of ±2 V at room temperature. The leakage current significantly reduced from ∼3.27×10−1 A/cm2 for pure Ga0.6Fe1.4O3 film to ∼1.48×10−5 A/cm2 for Ga0.6Fe1.35Zn0.05O3/N film, by four orders of magnitude. This may be attributed to the incorporation of Zn2+ and N3-, providing charge compensation to valence fluctuations of Fe between Fe3+ and Fe2+. These results provide an effective method to improve the ferroelectricity of Ga0.6Fe1.4O3 film, and open a wide perspective for the potential application in magnetoelectric devices.

Ferroelectric Stochasticity in 2D CuInP2S6 and Its Application for True Random Number Generator.

True random number generators (TRNGs), which create cryptographically secure random bitstreams, hold great promise in addressing security concerns regarding hardware, communication, and authentication in the Internet of Things (IoT) realm. Recently, TRNGs based on nanoscale materials have gained considerable attention for avoiding conventional and predictable hardware circuitry designs that can be vulnerable to machine learning (ML) attacks. In this article, a low-power and low-cost TRNG developed by exploiting stochastic ferroelectric polarization switching in 2D ferroelectric CuInP2S6 (CIPS)-based capacitive structures, is reported. The stochasticity arises from the probabilistic switching of independent electrical dipoles. The TRNG exhibits enhanced stochastic variability with near-ideal entropy, uniformity, uniqueness, Hamming distance, and independence from autocorrelation variations. Its unclonability is systematically examined using device-to-device variations. The generated cryptographic bitstreams pass the National Institute of Standards and Technology (NIST) randomness tests. This nanoscale CIPS-based TRNG is circuit-integrable and exhibits potential for hardware security in edge devices with advanced data encryption.

Robust Ferrimagnetism and Ferroelectricity in 2D ɛ-Fe2O3 Semiconductor with Ultrahigh Ordering Temperature.

2D single-phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D ɛ-Fe2O3 samples with both single-crystalline and polycrystalline form are demonstrated. Interestingly, the polycrystalline nanosheets also exhibit easily switchable ferroelectric polarizations comparable to that of single crystals. The existence of grain boundary does not hinder the switching and retention of ferroelectric polarization. Furthermore, the ɛ-Fe2O3 nanosheets show ferrimagnetic and ferroelectric Curie temperatures up to 800K, which reaches record highs in 2D single-phase multiferroic materials. This work provides important progress in the exploration of 2D high-temperature single-phase multiferroics for potentially compact high-temperature information nanodevices.

Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

AbstractFluorite‐structured ferroelectrics are one of the most promising material systems for emerging memory technologies. However, when integrated into electronic devices, these materials exhibit strong imprint effects that can lead to a failure during writing or retention operations. To improve the performance and reliability of these devices, it is cardinal to understand the physical mechanisms underlying the imprint during operation. In this work, the comparison of First‐Order Reversal Curves measurements with a new gradual switching experimental approach named “Unipolar Reversal Curves” is used to analyze both the fluid imprint and the time‐dependent imprint effects within a 10 nm‐thick Hf0.5Zr0.5O2 capacitor. Interestingly, the application of delay times (ranging from 100 µs up to 10 s) between the partial switching pulses of a Unipolar Reversal Curve sequence enables analysis of the connection between the two aforementioned imprint types. Based on these results, the study finally reports a unified physical interpretation of imprint in the context of a charge injection model, which explains both types of imprint and sheds light on the dynamics of multi‐level polarization switching in ferroelectrics.

Intermediate multidomain state in single-crystalline Mn-doped BiFeO3 thin films during ferroelectric polarization switching

A intermediate multidomain state and large crystallographic tilting of 1.78° for the (hh0)pc planes of a (001)pc-oriented single-domain Mn-doped BiFeO3 (BFMO) thin film were found when an electric field was applied along the [110]pc direction. The anomalous crystallographic tilting was caused by ferroelastic domain switching of the 109° domain switching. In addition, ferroelastic domain switching occurred via an intermediate multidomain state. To investigate these switching dynamics under an electric field, we used in situ fluorescent X-ray induced Kossel line pattern measurements with synchrotron radiation. In addition, in situ inverse X-ray fluorescence holography (XFH) experiments revealed that atomic displacement occurred under an applied electric field. We attributed the atomic displacement to crystallographic tilting induced by a converse piezoelectric effect. Our findings provide important insights for the design of piezoelectric and ferroelectric materials and devices.

Vapor Deposition of Bilayer 3R MoS2 with Room-Temperature Ferroelectricity.

Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse-flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room-temperature ferroelectricity of CVD-grown MoS2 will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit.

All-optical polarization switching in ferroelectrics

All-optical polarization switching in ferroelectrics

Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films

AbstractRecently, HfO2‐based ferroelectric thin films have attracted widespread interest in developing next‐generation nonvolatile memories. To form a metastable ferroelectric orthorhombic phase in HfO2, a post‐annealing process is typically necessary. However, the microscopic mechanism underlying the effect of annealing temperature on ferroelectric domain nucleation and growth is still obscure, despite its importance in optimizing the operation speed of HfO2‐based devices. In this study, the ferroelectric properties and polarization switching of Hf0.5Zr0.5O2 thin films annealed at different temperatures (550–700 °C) are systematically investigated. Evidently, the crystal structure, remnant polarization, and dielectric constant monotonically change with annealing temperature. However, microscopic piezoresponse force microscopy images as well as macroscopic switching current measurements reveal non‐monotonic changes in the polarization switching speed with annealing temperature. This intriguing behavior is ascribed to the difference in the ferroelectric‐domain nucleation process induced by the amount of oxygen vacancies in the Hf0.5Zr0.5O2 thin films annealed at different temperatures. This work demonstrates that controlling the defect concentration of ferroelectric HfO2 by tuning the post‐annealing process is critical for optimizing device performance, particularly polarization switching speed.

Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2.

Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.

Switchable diode effect in 2D van der Waals ferroelectric CuCrP2S6

Two-dimensional (2D) ferroelectrics has emerged as a promising building block for nonvolatile memory devices. In this work, we demonstrate the out-of-plane ferroelectricity of 2D CuCrP2S6 (CCPS) at the room temperature and the switchable diode effect in 2D CCPS-based ferroelectric nanodevices. The spontaneous out-of-plane ferroelectric polarization switching and hysteresis loops are directly evidenced by the piezoresponse force microscopy. The intrinsic ferroelectricity originates from the non-centrosymmetric structure of 2D CCPS, which is confirmed by optical second-harmonic generation technique. A ferroelectric tunnel junction was built up by using 2D CCPS as a function layer. The observed diode-like forward rectification effect of CCPS diode is opposite to the direction of remnant polarization, which is attributed to the ferroelectric polarization modulation of Schottky barrier. Our work highlights the great potential of 2D CCPS in ultrathin ferroelectric memory device and motivates the development of multifunctional nanodevices.

Frequency-Dependent Multistep Ferroelectric Polarization Switching Mechanism in P(VDF-TrFE)-Based Capacitors Induced by Polystyrene Electret-like Modulation.

In this work, we investigate multistep ferroelectric polarization switching dynamics of a series of poly(vinylidene fluoride-trifluoroethylene)/polystyrene, P(VDF-TrFE)/PS, as active layers in ferroelectric capacitors with variable P(VDF-TrFE)/PS thickness ratios and a wide range of driving voltage frequencies (1-1000 Hz). The PS electret-like modulation effects on the depolarized field fluctuation are proven to be responsible for this multistep ferroelectric polarization switching process. To be specific, the switching current density peak splits into two peaks in both positive and negative voltage ranges according to the stimulus-response (S-R) data from the metal-ferroelectric-electret-metal capacitor driven by a periodic triangular voltage wave. The double-peak current trough appears when the transitorily suppressed ferroelectric polarization switching occurs while the discharge and recharge of the PS electret by external voltage brings a specific dynamic change in the electric field across ferroelectric (EFE). We also propose a theoretical model to simulate the ferroelectric polarization switching process at a current trough zone. This phenomenon provides new concepts on the electret-modulated multistep ferroelectric switching dynamics, and such switching mechanisms are critical for realizing reliable nonvolatile memory applications in flexible electronics.