Current Switching Ratio Research Articles

Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer.

The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness of the active layers, we achieved significant improvements in the performance of the LZTO/ZTO TFTs. An XPS analysis was performed to elucidate the impact of the varying O2 element distribution ratio within the LZTO/ZTO bilayer thin film on the TFTs performance, which was directly influenced by the modification in the active layer thickness. Furthermore, we utilized atomic force microscopy to analyze the effect of altering the active layer thickness on the surface roughness of the LZTO/ZTO bilayer film and the impact of this roughness on the TFTs electrical performance. Through the optimization of the ZTO active layer thickness, the LZTO/ZTO TFT exhibited an mobility of 10.26 cm2 V-1 s-1 and a switching current ratio of 5.7 × 107, thus highlighting the effectiveness of our approach in enhancing the electrical characteristics of the TFT device.

An embedded gate gate-all-around FinFET for biosensing application

A dielectric modulated embedded gate gate-all-around fin field-effect transistor (EGGAA-FinFET) has been proposed for label-free detection applications of biomolecules in this article. The design expands the biomolecule capture area by establishing a cavity below the embedded gate. The performance of EGGAA-FinFET and FinFET biosensors is analyzed in a comprehensive comparison in terms of electrical performance, sensitivity and selectivity. Some important biosensing characteristics for EGGAA-FinFET (FinFET) have been calculated to be 0.43 V (0.32 V) for threshold voltage sensitivity, 2.22 × 106 (8.32 × 104) for current switching ratio sensitivity, and 0.75 (0.65) for subthreshold swing sensitivity. To determine the optimal structure of the biosensor, the effect of structural parameters on sensitivity is investigated. In addition, the effect of the filling factor on the biosensor is considered. The real-world performance of biosensors is assessed using the linearity parameter, showing that the EGGAA-FinFET biosensor has better noise resistance compared to the FinFET biosensor.

Tunability of Sb2Se3 phase change material for multi-domain optoelectronics

Phase change materials play an essential role in the development of tuneable optics by overcoming the limitations possessed by conventional optics due to their static behaviour. Due to their non-volatile nature, chalcogenide materials attained attention beyond other phase change materials. Antimony-based chalcogenides are promising due to low absorption loss, optimal refractive index change, and compatibility with silicon integration. This study optimises near-stoichiometric sputtered Sb2Se3 thin films and investigates their compositional, physical, and optical properties change by thermal, optical, and electrical stimuli. We further extend the investigation to the induced intermediate states in the Sb2Se3 thin film for multi-bit operation for tunable photonics and phase-change memory with a current switching ratio of 104 during a phase transition. The findings are integral to the realisation of high-capacity optical switches and routers, displays with larger colour distribution, and photonic memories with high computational capabilities.

Proposal and evaluation of Mg2Si-based vertical tunnel field effect transistor for enhanced performance

This work investigates the performance of silicon-on-insulator (SOI) based vertical heterojunction tunnel FET with magnesium silicide (Mg2Si) as source material (Mg2Si-VTFET) with silicon-based counterpart (Si-VTFET). The investigation utilizes SILVACO TCAD tool to analyse various metrics including electrical characteristics, radio-frequency performance, linearity, and distortion. Incorporation of low bandgap material at source forms hetero-junction at source-channel interface, thereby reducing the tunneling path and enhancing the tunneling rate of charge carriers. ON-state current (ION) and current switching ratio (ION/IOFF) for Mg2Si-VTFET improves by factor of approximately ∼ 105 and 102 times. Mg2Si-VTFET outperforms Si-VTFET in terms of ION current for low biasing voltages, transconductance (gm), gain-bandwidth-product (GBP), cut-off frequency (fT) and transit-time. However, Mg2Si-VTFET has better linearity and reduced distortions in terms of VIP2 and HD2 metrics. HD2 suppresses by 53.8 % for Mg2Si-VTFET over Si-VTFET. This suggests that Mg2Si-VTFET is better suited for applications requiring low distortion, such as in audio amplifiers or communication systems. Therefore, Mg2Si-VTFET shows strong candidacy over Si based counterpart for low power circuits.

The role of process and geometrical parameters of gate stack Inverted-T shape junction less FET at 20 nm technology node

In the present era, FET devices are seamlessly integrated with complex circuits that can be used to realize chips capable of operating at a significantly higher speed. These designed devices can meet the requisite of circuits used in designing mobile phones, tablets and laptops, thereby enhancing the overall performance. The present work focuses on designing of gate stack inverted-T junctionless FET at 20 nm technology node. Both static and low frequency characteristics of device such as threshold voltage (VTh), transconductance (gm), on (ION) & off (IOFF) state currents, as well as its high-frequency characteristics like total gate capacitance (Cgg), cut-off frequency (fT), maximum oscillation frequency (fmax) and gain bandwidth product (GBW) are methodically demonstrated with alterations in the device process and geometrical variations. The parameters such as height of fin, width of fin and work function are varied to study their impact. The SS, DIBL, ION/IOFF (current switching ratio) and VTh, for 20 nm gate length are observed as 67.94 mV/dec, 34.32 mV/V, 108, 0.32 V, respectively. The fmax is determined to be in the THz range and has early voltage of approximately 6.12V. Additionally, the effect of temperature is also studied by varying it in the range of 250 K–450 K. Analysis and virtual modelling of device is carried out using Visual TCAD. In addition, p-channel transistor is designed along with the n-channel configuration to investigate the device performance for CMOS based circuits. The noise margin and average delay of the inverter circuit are observed to be 0.37 V and 36.7 ps respectively.

Effects of Laser Treatment of Terbium-Doped Indium Oxide Thin Films and Transistors.

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin film transistor (MOTFT). Due to the poor negative bias illumination stress (NBIS) stability of indium gallium zinc oxide thin film transistor (IGZO-TFT) devices, terbium-doped Tb:In2O3 material was selected as the target of this study. The XPS test revealed the presence of both Tb3+ and Tb4+ ions in the Tb:In2O3 film. It was hypothesized that the peak of the laser thermal effect was reduced and the action time was prolonged by the f-f jump of Tb3+ ions and the C-T jump of Tb4+ ions during the laser treatment. Studies related to the treatment of Tb:In2O3 films with different laser energy densities have been carried out. It is shown that as the laser energy density increases, the film density increases, the thickness decreases, the carrier concentration increases, and the optical band gap widens. Terbium has a low electronegativity (1.1 eV) and a high Tb-O dissociation energy (707 kJ/mol), which brings about a large lattice distortion. The Tb:In2O3 films did not show significant crystallization even under laser energy density treatment of up to 250 mJ/cm2. Compared with pure In2O3-TFT, the doping of Tb ions effectively reduces the off-state current (1.16 × 10-11 A vs. 1.66 × 10-12 A), improves the switching current ratio (1.63 × 106 vs. 1.34 × 107) and improves the NBIS stability (ΔVON = -10.4 V vs. 6.4 V) and positive bias illumination stress (PBIS) stability (ΔVON = 8 V vs. 1.6 V).

Performance analysis of dual material control gate cavity on source electrically doped TFET biosensor for biomedical applications

The fabrication complexity, low sensitivity, detection speed, and costs associated with nanoscale devices have been significant concerns in the development of label-free biosensors. To address these issues, we report a novel dual material control gate cavity on source electrically doped tunnel field-effect transistor (DM-CG-CS-ED-TFET) for label-free biosensors. In this regard, the n+ drain and p+ source regions within the proposed device are induced by applying polarity gate (PG) bias voltages of PG-1 = +1.2 V and PG-2 = −1.2 V, respectively, across the respective polarity gate electrodes. This approach not only overcomes doping control issues but also avoids thermal budget constraints and minimizes fabrication complexity when compared to conventional TFET. For biomolecule sensing in the device, a nanogap cavity is created within the gate dielectric by selectively etching a portion of the polarity gate dielectric layer towards the source side. The performance of the proposed biosensor device is evaluated based on the variations in carrier concentration profile, energy band diagram, electric field, transfer (IDS - VGS) characteristics, drain current (IDS) sensitivity, ON-state current (ION) sensitivity, switching ratio (ION/IOFF) and subthreshold swing (SS) sensitivity. The sensitivity of the device is also investigated based on nano-cavity dimensions, practical challenges such as various filling factors, and the step profile generated from the steric hindrance. Moreover, the effect of temperature on sensitivity has also been investigated. For this, various biomolecules including Streptavidin (k = 2.1), APTES (k = 3.57), ferrocytochrome c (k = 4.7), keratin (k = 8) and Gelatin (k = 12), have been investigated for their performance using Silvaco ATLAS device simulator. The simulation results demonstrate that the proposed biosensor is a viable option for biosensing applications in biomedical engineering.

A dielectrically modulated vertical TFET-based biosensor considering irregular probe placement and steric hindrance issues

This manuscript presents a comparative biosensing analysis of a dielectrically modulated dual-drain vertical TFET (DD-VTFET) by considering three distinct device arrangements based on the cavity position. DD-VTFETs with single cavity at the source and drain edge are called SC-DD-VTFET and DC-DD-VTFET, respectively, while for SDC-DD-VTFET, dual cavities are created at both the source and drain edge. Asymmetry in cavity position results in different electrostatics for each biosensor, leading to variation in their sensing performance. The on-current sensitivity is found to be lower for the DC-DD-VTFET due to the absence of cavity near the channel-source interface, while the SC-DD-VTFET shows poor performance in terms of ambipolar current sensitivity compared to the SDC-DD-VTFET. Moreover, the study includes the consideration of neutral and charged biomolecules (both positive and negative) with varying dielectric constants of 5, 7, 10 and 12. The sensitivity of partially filled nanogaps with fill-factor (FF) of 42% and 60%, influenced by steric hindrance, are also compared for all three DD-VTFET based biosensors which includes different step profiles of biomolecules, such as concave, convex, increasing, and decreasing. To consider the non-ideal state of the DD-VTFET based biosensors, the effect of irregular placement of the probe within the nano-cavity on different sensitivity parameters for a particular k-value of biomolecules is also analysed using TCAD simulator. Furthermore, the performance of the DD-VTFET based biosensor is quantitatively benchmarked against previously published works available in the literature. For a fully filled cavity with neutral biomolecules having dielectric constant of 12, SDC-DD-VTFET based label-free biosensor provides ON-current and current-switching ratio sensitivities approximately in the order of 105, while the ambipolar current sensitivity of 2.1×103 is observed which makes the sensor equally suitable for sensing the biomolecules even at negative gate bias.

High-performance single crystal diamond pixel photodetector with nanosecond rise time for solar-blind imaging

Solar-blind ultraviolet imaging detector is widely applied in many commercial and military fields, such as missile warning, guidance, ultraviolet communication, biomedical analysis, and police reconnaissance. High-performance pixel photodetector is the core of imaging technology. Therefore, its construction attracts intensive attentions in recent years. In this work, 8 × 8 planar pixels were constructed on high quality single crystal diamond using ultraviolet direct writing lithography. A typical pixel photodetector in metal-semiconductor-metal (MSM) structure achieved outstanding photo-response properties of a low dark current of 10−13–10−12 A at 50 V, a high light-dark current switching ratio over 105), a high responsivity of 22.6 A/W, and a decent specific detectivity of 4.2 × 1014 Jones. Moreover, the detector has a fast response time of 13 ns. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable solar-blind imaging photodetector with high spatial resolution.

Maskless Femtosecond‐Laser‐Processed Ionotronic Double‐Gate Transistor Array for Pattern Adaptation Emulation

AbstractSensory adaptation is a very important function of the biological nervous system to maintain survival. It helps us to better perceive, understand, and adapt to the environment. Therefore, building artificial sensory adaptation systems through neuromorphic devices is a goal that humans have been continuously pursuing. Unfortunately, current research has either based on individual adaptive devices or employed complex processes. At present, a facile fabrication of adaptive device arrays is still a great challenge. Herein, a maskless ionotronic double‐gate oxide transistor array with pattern adaptation function is demonstrated using femtosecond laser process. Such process is a maskless patterning technology and free of chemical contamination, enabling a facile integration of device arrays. The as‐fabricated transistor exhibits a low subthreshold swing of 265 mV dec−1 and a reasonable current switching ratio of ≈103 under a low operating voltage of 1 V. Interestingly, it can achieve a transition from nonadaptive to adaptive behavior by the other gate terminal. Moreover, the desensitization behavior after adaptation can be realized for mimicking the self‐protection capability of biological sensory systems. Finally, a 2 × 2 transistor array is demonstrated for emulating the experience‐dependent pattern adaptation ability in the human brain. Therefore, this adaptive device array using femtosecond laser process may provide a good opportunity for the artificial sensory adaptation systems and the next‐generation bionic robots.

Fluorinated benzimidazole-based conjugated polymers for ternary memory devices

The application of fluorinated materials in optoelectronic devices has been extensively studied, yet their potential in polymer-based memory devices still needs to be explored. The strategic manipulation of electron donors and electron acceptors to enhance the electron properties of material represents a valid approach to advancing data storage performance. The acceptor unit plays a crucial role in charge trapping, by fluorinating acceptor unit, the polymer electron affinity can be further modulated, leading to optimized carrier injection. In this work, we have synthesized three donor-acceptor-type (D-A-type) conjugated polymers, employing benzimidazole-isoindole electron acceptors substituted with different numbers of fluorine atoms. These polymers were utilized as active layers and integrated into indium-tin-oxide/active layer/aluminum devices through a straightforward fabrication process. These devices exhibit excellent ternary non-volatile memory performance and demonstrate sustained stability even after 103 cycle numbers. Notably, the PM4Fbzo-based device achieves impressively low threshold voltages of −0.55 V and −0.80 V, accompanied by a switching current ratio surpassing 104. These exceptional outcomes show the tremendous potential of fluorinated benzimidazole-isoindole-based materials for ternary storage applications, showcasing them as one of the promising candidates for the next generation of materials.

Low-temperature rapid preparation of high-performance indium oxide thin films and transistors based on solution technology

Indium oxide (In<sub>2</sub>O<sub>3</sub>) thin films and thin-film transistors (TFTs) based on the solution process are prepared by pulsed UV-assisted thermal annealing at a low temperature (200 ℃) for 5 min. The effects of pulsed UV-assisted thermal annealing on the surface morphology, chemical structure, and electrical properties of the In<sub>2</sub>O<sub>3</sub> thin films are investigated, and they are compared with those of conventional thermal annealing (300 ℃, 30 min). The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In<sub>2</sub>O<sub>3</sub> thin film and the performance of TFT in a short period. The results of atomic force microscopy and field emission scanning electron microscopy show that the surface of the In<sub>2</sub>O<sub>3</sub> film is denser and flatter than that of the conventional thermally annealed film, and X-ray photoelectron spectroscopy tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies, which increases the carrier concentration and improves the electrical conductivity of the In<sub>2</sub>O<sub>3</sub> film. In addition, the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In<sub>2</sub>O<sub>3</sub> TFTs is investigated in a comparative way. The results show that the electrical characteristics of the device are significantly improved: the subthreshold swing decreases to 0.12 mV/dec, the threshold voltage is 7.4 V, the current switching ratio is as high as 1.29×10<sup>7</sup>, and the field effect mobility is enhanced to 1.27 cm<sup>2</sup>·V<sup>–1</sup>·s<sup>–1</sup>. Therefore, pulsed UV-assisted thermal annealing is a simple and fast annealing method, which can rapidly improve the performances of In<sub>2</sub>O<sub>3</sub> thin film and TFTs, even under low-temperature conditions.

Emerging ferroelectric materials ScAlN: applications and prospects in memristors.

The research found that after doping with rare earth elements, a large number of electrons and holes will be produced on the surface of AlN, which makes the material have the characteristics of spontaneous polarization. A new type of ferroelectric material has made a new breakthrough in the application of nitride-materials in the field of integrated devices. In this paper, the application prospects and development trends of ferroelectric material ScAlN in memristors are reviewed. Firstly, various fabrication processes and structures of the current ScAlN thin films are described in detail to explore the implementation of their applications in synaptic devices. Secondly, a series of electrical properties of ScAlN films, such as the current switching ratio and long-term cycle durability, were tested to explore whether their electrical properties could meet the basic needs of memristor device materials. Finally, a series of summaries on the current research studies of ScAlN thin films in the synaptic simulation are made, and the working state of ScAlN thin films as a synaptic device is observed. The results show that the ScAlN ferroelectric material has high residual polarization, no wake-up function, excellent stability and obvious STDP behavior, which indicates that the modified material has wide application prospects in the research and development of memristors.

Electrical performance of La-doped In2O3 thin-film transistors prepared using a solution method for low-voltage driving.

In this paper, La-doped In2O3 thin-film transistors (TFTs) were prepared by using a solution method, and the effects of La doping on the structure, surface morphology, optics, and performance of In2O3 thin films and TFTs were systematically investigated. The oxygen defects concentration decreased from 27.54% to 17.93% when La doping was increased to 10 mol%, and La served as a carrier suppressor, effectively passivating defects such as oxygen defects. In fact, the trap density at the dielectric/channel interface and within the active layer can be effectively reduced using this approach. With the increase of La concentration, the mobility of LaInO TFTs decreases gradually; the threshold voltage is shifted in the positive direction, and the TFT devices are operated in the enhanced mode. The TFT device achieved a subthreshold swing (SS) as low as 0.84 V dec-1, a mobility (μ) of 14.22 cm2 V-1 s-1, a threshold voltage (VTH) of 2.16 V, and a current switching ratio of Ion/Ioff of 105 at a low operating voltage of 1 V. Therefore, regulating the doping concentration of La can greatly enhance the performance of TFT devices, which promotes the application of such devices in high-performance, large-scale, and low-power electronic systems.

Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO3/La0.7Sr0.3MnO3 heterostructure by inserting a SrCoO2.5 layer.

A BaTiO3/SrCoO2.5 (BTO/SCO) bilayer and a BTO single film were prepared by radio frequency magnetron sputtering on La0.7Sr0.3MnO3 (LSMO) buffered SrTiO3 (001) substrates. Interestingly, compared with reported BTO-based films, the BTO/SCO/LSMO heterostructure has a maximum ON/OFF current ratio of ∼945. More interestingly, compared with the BTO single layer, a larger Pr (∼18.4 μC cm-2) and larger dielectric tunability (∼71.9%) were achieved in the BTO/SCO bilayer. The improved performance may be attributed to the large tetragonality and improved oxygen vacancy concentrations in the BTO/SCO/LSMO heterostructure. Furthermore, our BTO/SCO/LSMO stacks exhibit potential for flexible electronic informational devices.

High-Performance Biomemristor Embedded with Graphene Quantum Dots

By doping a dielectric layer material and improving the device’s structure, the electrical characteristics of a memristor can be effectively adjusted, and its application field can be expanded. In this study, graphene quantum dots are embedded in the dielectric layer to improve the performance of a starch-based memristor, and the PMMA layer is introduced into the upper and lower interfaces of the dielectric layer. The experimental results show that the switching current ratio of the Al/starch: GQDs/ITO device was 102 times higher than that of the Al/starch/ITO device. However, the switching current ratio of the Al/starch: GQDs/ITO device was further increased, and the set voltage was reduced (−0.75 V) after the introduction of the PMMA layer. The introduction of GQDs and PMMA layers can regulate the formation process of conductive filaments in the device and significantly improve the electrical performance of the memristor.

Nanographene‐Based Metal‐Organic Framework Thin Films: Optimized Packing and Efficient Electron‐Hole Separation Yielding Efficient Photodetector

AbstractOrganic semiconductors, specifically polycyclic aromatic chromophores like pentacene, coronene, and nanographenes (hexa‐peri‐hexabenzocoronene, HBC), are often utilized in optoelectronic applications due to their intriguing single‐molecule properties. However, the integration of these aromatic compounds into optoelectronic devices frequently encounters significant obstacles, primarily due to the unpredictable and challenging control over the structure and morphology of their condensed phase. Rather than resorting to chemical modifications or advanced thin‐film manufacturing methods such as chemical vapor deposition, the so‐called metal‐organic framework (MOF) approach is employed to create a highly photoresponsive, nanographene‐based thin film employing a layer‐by‐layer, liquid‐phase epitaxy method. It is demonstrated that the novel Cu‐HBC MOF thin film exhibits excellent photoresponsive behavior under ultraviolet illumination, including a fast response time (˂ 0.02 s) and high current switching ratio (≈104), which significantly outperforms an isostructural MOF Zn‐HBC. Furthermore, it is demonstrated that the metal nodes inside the MOF can be used to enhance the photoresponse by efficient exciton splitting.

GaSb/GaAs Type‐II heterojunction GAA‐TFET with core source for enhanced analog/RF performance and reliability

AbstractFor the first time, a novel source extension heterojunction gate‐all‐around tunnel FET (SE‐GAA‐TFET) is proposed and examined using Synopsys TCAD simulator in this manuscript. SE‐GAA‐TFET is found to exhibit improved performance in terms of various analog/RF and DC parameters. As channel/source (C/S) interface and electric field exerted by gate are perpendicular to each other, radius of channel is downscaled to enhance electric filed, without reducing area of the tunneling. Furthermore, the presence of GaSb/GaAs heterojunction at C/S interface leads to reduction in the effective band overlap, which helps a great number of mobile charges to tunnel through C/S boundary at ON‐state. The consequences of variation in different geometrical metrics are evaluated to optimize the device performance. SE‐GAA‐TFET is found to offer a current switching ratio (CSR) of ~1013 along with 32.2 mV dec−1 of average sub‐threshold swing (SSAVG). Furthermore, improvement in transconductance and parasitic capacitance boost the cut‐off frequency of SE‐GAA‐TFET up to 37 GHz. Next, both positive and negative traps are introduced at S/C interface and the study reveals that there is no much deviation in parameters of the transfer characteristics like ION, SSAVG, and IOFF of SE‐GAA‐TFET. Next, proper benchmarking is done to compare the performance of the SE‐GAA‐TFET with similar devices available in literature and it is found that proposed SE‐GAA‐TFET exhibits better DC performance due to improved electrostatic behavior. Finally, SE‐GAA‐TFET is found to offer better fall time along with full‐voltage swing when deployed in a resistive load inverter.

Memristive Effect in Ti3C2Tx(MXene)Polyelectrolyte Multilayers.

The emerging novel class of two-dimensional materials - MХenes - have attracted significant research attention. However, there are only few reports on using the most prominent member of the MXene family, Ti3C2Tx, as an active material for memristive devices within a polyelectrolyte matrix and its deposition on inert electrodes like ITO and Pt. In this study, we systematically investigate Ti3C2Tx MXenes synthesized with two classical delamination agents, such as lithium chloride and tetramethylammonium hydroxide, to identify the most suitable candidate for memristive device applications. The characteristics of memristors based on the hybrid structures consisting of MXene-polyelectrolyte multilayers, specifically polyethyleneimine (PEI) and poly(sodium 4-styrenesulfonate) (PSS) are explored. The PEI(MXene)/PSS memristor exhibits a voltage threshold (VSET/RESET) range of 1.5-2.0 V, enabling the transition from a high-resistive state (HRS) to a low-resistive state (LRS), along with a significant current switching ratio of approximately two orders of magnitude. The observed VSET/RESET difference of approximately 4V is further supported by density functional theory (DFT) calculated redox potential. These findings underscore the potential of polyelectrolyte-based memristors, such as the in PEI-Ti3C2Tx-PSS system, in facilitating the development of highly functional, self-assembled memristive devices with diverse applications.

A novel inverted T-shaped negative capacitance TFET for label-free biosensing application

The promising candidate for designing a highly sensitive biosensor is the negative capacitance tunneling field effect transistor (NCTFET). In this paper, to enhance the sensitivity and performance of the biosensor, we combined inverted T-shaped structure with NCTFET. We introduce negative capacitance effects by stacking ferroelectric materials on the gate dielectric layer. This paper presents a detailed comparative analysis of the proposed inverted T-shaped-NCTFET and TFET based biosensors for different dielectric constants and charge densities of the nano-cavity between the channel and source region locations of biosensor. Sensitivity has been measured in terms of drain current, on-state current, current switching ratio, electric field, and transconductance sensitivity. To establish a benchmark, the sensitivity of the proposed biosensor is also compared with the published literature in order to determine its effectiveness. It is conferred from the results that our biosensor can be a better alternative for the detection of the various neutral and charged biomolecules. All the device simulations are performed in a TCAD environment using a well-calibrated structure.