Switching Barriers Research Articles

Why do dissatisfied consumers remain loyal? The role of switching barriers in online shopping

The existence of e-commerce has two sides of the coin for marketers. E-commerce can be very effective in marketing products or services. On the other hand, it also makes it easier for consumers to switch their choice to competing brands due to the ease of features in comparing prices and quality. Therefore, maintaining consumer satisfaction and dissatisfaction in the online shopping experience is very important for companies to retain their consumers. This study explores the relationship between dissatisfaction and switching behavior in e-commerce. The research was conducted qualitatively using the Critical Incident Technique (CIT) to achieve this goal. Informants in this study were consumers who experienced dissatisfaction when making online purchases in the last six months. The results show that even though consumers experience dissatisfaction, they persist in not switching behavior. The existence of switching barriers in online shopping in the form of ease of use of technology, time efficiency, convenience, and variety seeking are why consumers continue using e-commerce platforms even though they have experienced disappointing services.

Two-Dimensional Os2Se3 Nanosheet: A Ferroelectric Metal with Room-Temperature Ferromagnetism.

Two-dimensional (2D) ferroelectric metals (FEMs) possess intriguing characteristics, such as unconventional superconductivity and the nonlinear anomalous Hall effect. However, their occurrence is exceedingly rare due to mutual repulsion between ferroelectricity and metallicity. In addition, further incorporating other features like ferromagnetism into FEMs to enhance their functionalities poses a significantly greater challenge. Here, via first-principles calculations, we demonstrate a case of an FEM that features a coexistence of room-temperature ferromagnetism, ferroelectricity, and metallicity in a thermodynamically stable 2D Os2Se3. It presents a vertical electric polarization of 3.00 pC/m that exceeds those of most FEMs and a moderate polarization switching barrier of 0.22 eV per formula unit. Moreover, 2D Os2Se3 exhibits robust ferromagnetism (Curie temperature TC ≈ 527 K) and a sizable magnetic anisotropy energy (-30.87 meV per formula unit). Furthermore, highly magnetization-dependent electrical conductivity is revealed, indicative of strong magnetoelectric coupling. Berry curvature calculation suggests that the FEM might exhibit nontrivial band topology.

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.

Why do dissatisfied consumers remain loyal? The role of switching barriers in online shopping

The existence of e-commerce has two sides of the coin for marketers. E-commerce can be very effective in marketing products or services. On the other hand, it also makes it easier for consumers to switch their choice to competing brands due to the ease of features in comparing prices and quality. Therefore, maintaining consumer satisfaction and dissatisfaction in the online shopping experience is very important for companies to retain their consumers. This study explores the relationship between dissatisfaction and switching behavior in e-commerce. The research was conducted qualitatively using the Critical Incident Technique (CIT) to achieve this goal. Informants in this study were consumers who experienced dissatisfaction when making online purchases in the last six months. The results show that even though consumers experience dissatisfaction, they persist in not switching behavior. The existence of switching barriers in online shopping in the form of ease of use of technology, time efficiency, convenience, and variety seeking are why consumers continue using e-commerce platforms even though they have experienced disappointing services.

A Route to Two-Dimensional Room-Temperature Organometallic Multiferroics: The Marriage of d-p Spin Coupling and Structural Inversion Symmetry Breaking.

Two-dimensional (2D) room-temperature multiferroic materials are highly desirable but still very limited. Herein, we propose a potential strategy to obtain such materials in 2D metal-organic frameworks (MOFs) by utilizing the d-p direct spin coupling in conjunction with center-symmetry-breaking six-membered heterocyclic rings. Based on this strategy, a screening of 128 2D MOFs results in the identification of three multiferroics, that is, Cr(1,2-oxazine)2, Cr(1,2,4-triazine)2, and Cr(1,2,3,4-trazine)2, simultaneously exhibiting room-temperature ferrimagnetism and ferroelectricity/antiferroelectricity. The room-temperature ferrimagnetic order (306-495 K) in these MOFs originates from the strong d-p direct magnetic exchange interaction between Cr cations and ligand anions. Specifically, Cr(1,2-oxazine)2 exhibits ferroelectric behavior with an out-of-plane polarization of 4.24 pC/m, whereas the other two manifest antiferroelectric characteristics. Notably, all three materials present suitable polarization switching barriers (0.18-0.31 eV). Furthermore, these MOFs are all bipolar magnetic semiconductors with moderate band gaps, in which the spin direction of carriers can be manipulated by electrical gating.

A Study on the Analysis of Factors Affecting Consumer Purchase Intention of Korean Smartphone Brands: Focusing on Cameroon in Central Africa*

Purpose – An increase in the number of smartphone users and the availability of many phone brands has induced consumers to consider device features, the technology acceptance model (TAM), and switching barriers before making a purchase. As such, this paper seeks to investigate the factors (device features and switching barrier) and TAM determinants that influence the consumer satisfaction and purchase intention of smartphones. Additionally, we study the moderating effects that perceived ease of use may have on consumer purchase intention. Design/Methodology/Approach – To this end, the analysis of data (325) through structural equation modeling in AMOS seeks to examine the effect of device features, TAM determinants, and switching barriers on purchase intention. Findings – The findings demonstrate TAM (perceived usefulness) and device features (function and price) influence consumer satisfaction to varying degrees. With regards to switching barrier, switching cost has a positive influence on consumer satisfaction. Perceived ease of use moderates the relationship between device function and search intention. Finally, the study confirms the relationship between consumer satisfaction and purchase intention. Research Implications – Due to the importance of consumer satisfaction in forming purchase intention, companies should try to maximize the satisfaction of customers during interactions by providing device features that meet the need of the customer. Therefore, companies should try to identify the needs of customers. Going by TAM determinants, manufacturers have to ensure that the system technology of the smartphone is most useful for consumer day to day activities.

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

Two-dimensional (2D) van der Waals (vdWs) ferroelectric heterostructures provide a platform to design multifunctional electronic devices. In this Letter, the 2D vdWs ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures were constructed to investigate the appropriate band alignment, effective masses, charge transfer, and polarization switching barriers by employing first-principle calculation. The results show that the polarization reversal of α-In2Se3 engineers band alignment transition from type-II (α-In2Se3-P↑/Cs3Bi2I9) to type-I (α-In2Se3-P↓/Cs3Bi2I9), resulting in an indirect bandgap changing from 0.09 to 0.75 eV. Calculated electron effective masses are isotropic, which is smaller than those of anisotropic hole effective masses. Interfacial charges transfer from Cs3Bi2I9 to α-In2Se3, which can be ascribed to work function difference. By combining non-equilibrium Green's functions, the current–voltage characteristics of α-In2Se3/Cs3Bi2I9 based ferroelectric tunnel junction were investigated, and the current on/off ratio of 103 is resulted by spatial charge carrier separation and recombination. The proposed electron–hole separation transport design strategy provides a comprehensive theoretical support for the development of microelectronic storage devices.

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Neuromorphic devices based on ferroelectric resistive switching (RS) effects are promising to simulate the information recognition and memory of the human brain. However, the high power of RS elements in crossbar arrays is still an issue, limiting the neuromorphic applications. Here, we propose a domain-modified engineering for low-power RS in ferroelectric diodes by locally introducing relaxor ferroelectric units to lower domain switching barriers. A low-power RS of ∼ 70 μW, with large OFF/ON resistance ratio and high endurance, is achieved in Au/0.8BaTiO3-0.1Ba0.7Sr0.3TiO3-0.1BaTi0.7Zr0.3O3/Pt diodes, which is about 48.5% lower than that in Au/BaTiO3/Pt diodes. The interaction between macrodomains is depressed by domain modification engineering, lowering domain switching barriers, thereby operating voltage and power are significantly modulated. Meanwhile, good nonvolatility is obtained since the remanent polarization is partially maintained by the initial macrodomains and its decrease is slowed down by the relaxor units. This work provides a strategy to lower RS power by domain modification engineering for developing memristors and neuromorphic computing devices.

The impact of service quality on student retention: The mediating roles of student satisfaction and switching barriers in private universities

This research investigated the influence of university service quality, student satisfaction, and switching barriers on student retention within private higher educational institutions situated in Ho Chi Minh City, Vietnam. A total of 410 valid questionnaires were collected for analysis, with hypothesis testing conducted using partial least squares structural equation modeling (PLS-SEM). The findings indicate a positive relationship between service quality within Vietnamese higher education institutions and student satisfaction. Additionally, student satisfaction has a positive association with student retention and switching barriers. Furthermore, switching barriers exhibit a positive relationship with student retention. Mediation analyses revealed that student satisfaction mediates the link between service quality and student retention, while switching barriers mediate the relationship between student satisfaction and retention. These findings contribute to the extant literature by elucidating the dynamics of service quality, student satisfaction, switching barriers, and student retention within higher educational contexts, particularly in the realm of private universities. Notably, this study establishes empirical correlations among service quality, student satisfaction, and student retention. Noteworthy outcomes include revealing the positive impact of service quality on switching barriers and identifying the robust moderating effect of switching barriers on the relationship between student satisfaction and student retention. From a managerial perspective, the constructs and insights derived from this study offer valuable guidance to the management teams of private universities, facilitating a deeper understanding of the pivotal role played by service quality in influencing student satisfaction and retention. Consequently, these insights can inform the strategic direction of private educational institutions in Vietnam.

Enhancing customer loyalty in the airline industry: Critical personal values and switching barriers

The current study aims to explore how customers’ personal values influence customer-perceived switching barriers and drive customer loyalty in the airline industry. Notably, it investigates switching barriers as a moderator between three dimensions of personal values and customer loyalty. Data were collected from passengers at Tan Son Nhat International Airport, Ho Chi Minh City, the busiest airport in Vietnam, using the convenience sampling method. Data analysis was conducted through structural equation modelling. The moderating effects were tested by PROCESS 3.4 macro in SPSS. The analysis shows that different facets of personal values explicate different impacts on switching barriers and customer loyalty. Further, the heterogeneous moderating role of the switching barriers in the relationship between dimensions of personal values and consumer loyalty is highlighted. These results suggest effective strategies for airlines to successfully retain their customer base.

An elemental ferroelectric topological insulator in ψ-bismuthene.

A ferroelectric quantum spin Hall insulator (FEQSHI) exhibits coexisting ferroelectricity and time-reversal symmetry protected edge states, holding exciting prospects for inviting both scientific and application advances, particularly in two-dimensional systems. However, FEQSHI candidates that consist of only one constituent element are rarely reported. Here, we show that ψ-bismuthene, an allotrope of bilayer Bi (110), is a concrete example of a two-dimensional elemental FEQSHI. It is demonstrated that ψ-bismuthene possesses measurable ferroelectric polarization and nontrivial band gap with moderate switching barrier, making it highly suitable for the detection and observation of ferroelectric topologically insulating states. Additionally, the auxetic behavior, quantum transport properties and ferroelectric controllable persistent spin helix in ψ-bismuthene are also discussed. These findings make ψ-bismuthene promising for both fundamental physics and technological innovations.

Single Molecular Semi-Sliding Ferroelectricity/Multiferroicity.

In recent years, the unique mechanism of sliding ferroelectricity with ultralow switching barriers has been experimentally verified in a series of 2-dimensional (2D) materials. However, its practical applications are hindered by the low polarizations, the challenges in synthesis of ferroelectric phases limited in specific stacking configurations, and the low density for data storage since the switching process involves large-area simultaneous sliding of a whole layer. Herein, through first-principles calculations, we propose a type of semi-sliding ferroelectricity in the single metal porphyrin molecule intercalated in 2D bilayers. An enhanced vertical polarization can be formed independent on stacking configurations and switched via sliding of the molecule accompanied by the vertical displacements of its metal ion anchored from the upper layer to the lower layer. Such semi-sliding ferroelectricity enables each molecule to store 1 bit data independently, and the density for data storage can be greatly enhanced. When the bilayer exhibits intralayer ferromagnetism and interlayer antiferromagnetic coupling, a considerable difference in Curie temperature between 2 layers and a switchable net magnetization can be formed due to the vertical polarization. At a certain range of temperature, the exchange of paramagnetic-ferromagnetic phases between 2 layers is accompanied by ferroelectric switching, leading to a hitherto unreported type of multiferroic coupling that is long-sought for efficient "magnetic reading + electric writing".

Global Event-Triggered Funnel Control of Switched Nonlinear Systems via Switching Multiple Lyapunov Functions.

In this article, the global event-triggered (ET) funnel tracking control problem is studied for a class of switched nonlinear systems with structural uncertainties, where the solvability of the control problem for each subsystem is not needed. A switching multiple Lyapunov functions (MLFs) method is established, where MLFs are designed to handle switched inverse dynamics, and a switching barrier Lyapunov function is constructed to address switched sampled errors that may compromise system stability. This is achieved alongside a new switching dynamic event-triggering mechanism (DETM). By combining this method with backstepping, a dwell-time state-dependent switching law and an ET funnel controller of each subsystem are constructed, effectively eliminating the issue of the "explosion of complexity" encountered in traditional backstepping without using dynamic surface control or command filters. Additionally, the designed switching DETM ensures that the tracking error always evolves within a performance funnel in any consecutive triggering interval, excluding Zeno behavior, and guaranteeing positive constant lower bounds for two consecutive triggering intervals and any switching interval, respectively. Finally, an example is provided to show the validity of the theoretical results.

The Effect of Web Quality, Customer Retention and Switching Barrier on Customer Loyalty Through Customer Satisfaction

Tokopedia is one of the online shopping portals that has existed since 2009 until now the name of Tokopedia is getting bigger and known by many people in Indonesia, but over time and technological developments in Indonesia, more and more of these other online shopping portals have an impact on the variety of choices among the public as other choices and can compare which one is the most value for money to be made the main choice as a means of online shopping. But in the end, not a few of these online shop companies finally decided to close their portals in Indonesia because of the very high competitive level and difficulty in getting loyal customers. Until the peak when the pandemic occurred which reduced the level of people's purchasing power, several online shops began to close their networks in Indonesia. This study aims to determine the effect of web quality, customer retention and switching barrier through customer satisfaction on customer loyalty. The population in this study is employees of PT Solusi Transportasi Indonesia with the number of samples in this study amounting to 100 employees who have become users of the Tokopedia application at least have placed orders. Purposive sampling techniques with data collection are carried out using questionnaires in Gform format which are then processed using SmartPLS 4.0 software using SEM (Structural Equation Modeling) models. The results showed that directly variable X (Quality Web, Customer Retention and Switching Barrier) had a positive and significant effect on variable Z (Customer Satisfaction) but the independent variable or X (Quality Web, Customer Retention and Switching Barrier) had a positive value but not significant to Y (Customer Loyalty), but when variable X (Quality Web, Customer Retention, Switching Barrier) mediated by variable Z (Customer Satisfaction) had results positive and significant

Customer equity drivers and repurchase intent among B2B customers: the moderating role of perceived switching cost

Purpose This study aims to investigate the role of three customer equity drivers on customer repurchase intent in business-to-business (B2B) markets. It also explores the interconnected nature of equity drivers, specifically, the effects of brand equity and value equity on relationship equity. Further, it investigates how perceived switching costs moderates the interrelationships between customer equity drivers. The authors explore the interrelationships between the customer equity drivers in a B2B context involving commodity products in a developing market. Design/methodology/approach Data collection was done from a pool of 184 institutional customers of a lubricant brand in a developing market. The sample had representations of buyer organizations across sectors, namely, automobile, cement, metal, fertilizer, railway, defence and mining, etc. The final data were subjected to partial least squares-based structural equation modeling to test the hypothesized model. Findings The study found a direct effect of brand equity, and value equity on relationship equity and an indirect effect on repurchase intent, namely, relationship equity. Perceived switching cost was found to moderate the interaction between brand equity and relationship equity as well as between value equity and relationship equity. The direct effect of relationship equity on repurchase intent was also significant. Practical implications The study implies that B2B firms should ground their marketing program on these customer equity drivers, especially when dealing with commodity products. The absence of any of these drivers would be detrimental in customer retention. The study also establishes the relevance of switching cost(s) and its impact on the underlying dynamics between the different equity drivers in the context of commodity products. The customer equity drivers along with switching costs, if managed well, may become switching barriers for customers and eventually would ensure recurring revenue through repeat purchases. Originality/value To the best of the authors’ knowledge, this is one of the first studies that focuses on the disaggregated effect of customer equity on customer outcomes in the B2B context. Furthermore, this study investigates how perceived switching costs moderates the interrelationships between customer equity drivers in the industrial sales context in an emerging market.

Pengaruh Kepuasan, Kepercayaan dan Switching Barrier Terhadap Loyalitas Pelanggan pada GraPari Mitra Singaraja (PT. Telkomsel)

This study aims to determine the effect of satisfaction, trust, and switching barriers on customer loyalty at GraPari Mitra Singaraja (PT. Telkomsel). The data analysis technique used in this research is Structural Equation Modeling (SEM) based on variance SEM, known as Partial Least Square (PLS) visual version 3.0. The study results show that the effect of satisfaction on customer loyalty is positive and significant, which indicates that the first hypothesis is that the higher customer satisfaction, the higher customer loyalty at GraPari Mitra Singaraja (PT Telkomsel). The effect of trust on customer loyalty with a positive and significant value indicates that the second hypothesis, which says the higher the trust, the higher the customer loyalty at GraPari Mitra Singaraja (PT Telkomsel). The effect of switching barriers on customer loyalty is positive and significant, which indicates that the third hypothesis states that the higher the switching barrier, the higher customer loyalty at GraPari Mitra Singaraja (PT Telkomsel).

Ultrafast switching dynamics of the ferroelectric order in stacking-engineered ferroelectrics

Recent research has highlighted the potential of ferroelectricity in van der Waals bilayers in providing an unconventional route for improving device performance. Understanding the static and dynamic properties of domain wall (DW) is critical unlocking this potential, as key parameters such as switching field and speed heavily rely on them. In this article, we conduct a theoretical exploration of the fundamental properties of textures in stacking-engineered ferroelectrics using a machine-learning potential model. Our results demonstrate that competition between the switching barrier of stable ferroelectric states and in-plane lattice distortion leads to a DW width of ten nanometers. We also demonstrate that DW motion can drastically reduce the critical ferroelectric switching field of a monodomain by two orders of magnitude and enable domain switching on a picosecond timescale, suggesting the potential for ultrafast and energy-saving non-volatile memory devices. Moreover, twisting the bilayer into a stacking Moiré structure results in a super-paraelectric state, because the ferroelectric order is reversibly broken by DW motion already at ultralow electric fields. These findings offer valuable insights into the behavior and properties of stacking-engineered ferroelectrics, with significant implications for the development of next-generation electronic devices.

Novel ferroelectric structures of Al1-xScxN with low polarization switching barriers and large spontaneous polarization

Novel ferroelectric structures of Al1-xScxN with low polarization switching barriers and large spontaneous polarization

Engineering Ferroelectricity and Large Piezoelectricity in h-BN.

Hexagonal boron nitride (h-BN) is a well-known layered van der Waals (vdW) material that exhibits no spontaneous electric polarization due to its centrosymmetric structure. Extensive density functional theory (DFT) calculations are used to demonstrate that doping through the substitution of B by isovalent Al and Ga breaks the inversion symmetry and induces local dipole moments along the c-axis, which promotes a ferroelectric (FE) alignment over antiferroelectric. For doping concentrations below 25%, a "protruded layered" structure in which the dopant atoms protrude out of the planar h-BN layers is energetically more stable than the flat layered structure of pristine h-BN or a wurtzite structure similar to w-AlN. The computed polarization, between 7.227 and 21.117 μC/cm2, depending on dopant concentration and the switching barrier (16.684 and 45.838 meV/atom) for the FE polarization reversal are comparable to that of other well-known FEs. Interestingly, doping of h-BN also induces a large negative piezoelectric response in otherwise nonpiezoelectric h-BN. For example, we compute d33 of -24.214 pC/N for Ga0.125B0.875N, which is about 5 times larger than that of pure w-AlN (5 pC/N), although the computed e33 (-1.164 C/m2) is about 1.6 times lower than that of pure w-AlN (1.462 C/m2). Because of the layered structure, the rather small elastic constant C33 provides the origin of the large d33. Moreover, doping makes h-BN an electric auxetic piezoelectric. We also show that ferroelectricity in doped h-BN may persist down to its trilayer, which indicates high potential for applications in FE nonvolatile memories.

The Effect of Customer Satisfaction, Brand Trust, and Switching Barriers on Customer Retention of Users of Grab Online Transportation Services in the City of Surabaya

This study aims to determine how customer satisfaction, brand trust, and switching barriers affect customer retention in Grab online transportation user services in Surabaya. The method in this study uses a quantitative approach. One hundred twenty respondents were obtained as research samples using non-probability sampling with a purposive sampling technique. The selected sample is consumers who have used Grab online transportation services. Data was collected via a survey via a Google form, then analyzed using Structural Equation Modeling (SEM) via Partial Least Square (PLS). The fact explains that the variables of customer satisfaction, brand trust, and switching barriers positively contribute to the customer retention variable.