Surface Topology Properties Research Articles

The effect of milling conditions on the magnetic and topological properties of MgB2 synthesized by high-energy ball mill and sintered at low temperature

Magnesium diboride, MgB2, is known to be an important high-temperature superconductor material. High-energy ball milling with subsequent low-temperature sintering remains an attractive solid-state method for its synthesis. One main optimization parameter of this method is to ensure a balance between cold welding and fracturing at the milling stages. Therefore, in many cases, the use of a process control agent at the milling stage is considered to be the preferred solution in the prevention of particle size enlargement. The aim of this paper is to determine the effect of dry and toluene-assisted milling on the magnetic and surface topology properties of obtained MgB2. The calculated critical current density of 2.89 × 105 A/cm2 at 10 K 0.3 T for a toluene-assisted sample, compared with the 2.37 × 105 A/cm2 for a dry-milled sample as well as the relatively higher mean surface roughness, clearly indicated a notable positive contribution of surfactant use on the true alloying of MgB2 by mechanical activation.

Enhanced optoelectronic properties of Mg doped Cu2O thin films prepared by nebulizer pyrolysis technique

In the present work, pure and magnesium doped Cu2O films were deposited on glass substrates by nebulizer spray pyrolysis method with doping concentrations of 0, 3, 5 and 7% at 280 °C. The as-prepared films were analyzed by XRD, AFM, laser Raman, UV–Vis, photoluminescence, Hall Effect measurements. An X-ray diffraction study clearly depicts that films are possessing polycrystalline nature with a cubic structure. The surface topological properties have been characterized using atomic force microscopy (AFM) which reveals nano shaped hill rock grains covered the surface of the substrate. Laser Raman spectroscopy studies confirm the peaks observed at 109, 148, 217, 416 and 514 cm−1 belong to Cu2O phase. UV–Vis spectrophotometer measurements show that the band gap is decreased from 2.25 to 1.9 eV for the increase of doping concentration Mg. Photoluminescence spectral analysis giving an emission peak at 630 nm confirmed the formation of cuprous oxide. The electrical studies showed that the films are of p-type. For the doping of 7% Mg concentration the Cu2O showed a resistivity 1.53 × 102 andhigh carrier concentration of 21.67 × 1016 cm−3. FTO/ZnO/Cu2O/Ag heterojunction was fabricated using 7% Mg doped Cu2O thin film, and found the open circuit voltage (Voc) as 0.25 V, short circuit current (Isc) as 0.225 × 10−4 A and the efficiency as 0.65% for the 7% Mg doped Cu2O thin film.

Engineering and Probing Topological Properties of Dirac Semimetal Films by Asymmetric Charge Transfer.

Dirac semimetals (DSMs) have topologically robust three-dimensional Dirac (doubled Weyl) nodes with Fermi-arc states. In heterostructures involving DSMs, charge transfer occurs at the interfaces, which can be used to probe and control their bulk and surface topological properties through surface-bulk connectivity. Here we demonstrate that despite a band gap in DSM films, asymmetric charge transfer at the surface enables one to accurately identify locations of the Dirac-node projections from gapless band crossings and to examine and engineer properties of the topological Fermi-arc surface states connecting the projections, by simulating adatom-adsorbed DSM films using a first-principles method with an effective model. The positions of the Dirac-node projections are insensitive to charge transfer amount or slab thickness except for extremely thin films. By varying the amount of charge transfer, unique spin textures near the projections and a separation between the Fermi-arc states change, which can be observed by gating without adatoms.