Surface State Density Research Articles

Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing* *Project supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187), the National Key Research and Development Program of China (Grant No. 2017YFB0402804), and the “Science and Technology Innovation 2025” Major Program of Ningbo (Grant No. 2018B10098).

AlGaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and conventional rapid thermal annealing. The current transport mechanism of ohmic contacts is investigated. High-temperature annealing can be avoided in the isolated region and the active region by selective laser annealing. The implanted isolation leakage current is maintained 10−6 mA/mm even at 1000 V after selective laser annealing. On the contrary, high-temperature annealing will cause obvious degradation of the isolation. The morphology of AlGaN surface is measured by atomic force microscope. No noticeable change of the AlGaN surface morphology after selective laser annealing, while the root-mean-square roughness value markedly increases after rapid thermal annealing. The smaller frequency dispersion of capacitance–voltage characteristics confirms the lower density of surface states after selective laser annealing. Thus, dynamic on-resistance is effectively suppressed.

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Gallium nitride (GaN) is one of the front-runner materials among the so-called wide bandgap semiconductors that can provide devices having high breakdown voltages and are capable of performing efficiently even at high temperatures. The wide bandgap, however, naturally leads to a high density of surface states on bare GaN-based devices or interface states along insulator/semiconductor interfaces distributed over a wide energy range. These electronic states can lead to instabilities and other problems when not appropriately managed. In this Tutorial, we intend to provide a pedagogical presentation of the models of electronic states, their effects on device performance, and the presently accepted approaches to minimize their effects such as surface passivation and insulated gate technologies. We also re-evaluate standard characterization methods and discuss their possible pitfalls and current limitations in probing electronic states located deep within the bandgap. We then introduce our own photo-assisted capacitance–voltage (C–V) technique, which is capable of identifying and examining near mid-gap interface states. Finally, we attempt to propose some directions to which some audience can venture for future development.

AlGaInP-based Micro-LED array with enhanced optoelectrical properties

The micro lighting-emitting diode (Micro-LED) array devices have attracted attention due to increasing demand in augmented reality (AR), virtual reality (VR), LIFI light source, and other micro-display applications. However, with the decrease of micro-LED diameter, the performance of micro-LED is severely limited due to the size effect. In the work, the AlGaInP based red micro-LED with diameter ranging from 2 to 16 μm was prepared to study the size effect of micro-LED array, the array with larger micro-LED diameter show higher external quantum efficiency (EQE), meanwhile, the carrier lifetime decrease with the decreasing of the diameter, which can be explained by more surface states in the micro-LED with smaller diameter. The enhancement of EQE by 2 times has been achieved after surface passivation in (NH 4 ) 2 S x solution. • Micro-LED diameter ranging from 2 to 16 μm was fabricated, and the influence of size effect on the photoelectric performance was studied. • A fast and low-cost surface passivation method was used to successfully reduce the surface state density, and increase EQE of the Micro-LED array by 2 times. • The cause of size effect is clearly explained and the device performance is successfully optimized through surface passivation, which provides valuable guidance for the future commercialization of micro-LED.

Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements

In this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced and the radiation effects on their electrical properties were investigated using the current-voltage (I–V) measurements. The I–V measurements were performed before irradiation and after various irradiation doses in the wide voltage range (±4 V) at room temperature. To determine gamma-irradiation effects on the MPS-type SDs accurately, one SD was preferred as a sample, and its significant electrical parameters such as zero-bias barrier height (ΦB0), ideality factor (n), and reverse-saturation-current (I0) were calculated using the linear parts of the ln(I)–V characteristics. Besides, to observe the effects of gamma-rays on MPS-type SDs in different voltage regions, some diode parameters were obtained by different calculation methods such as Cheung and Norde functions as well as Thermionic Emission (TE) theory. The calculations showed that high doses of gamma-irradiation (>5 kGy) caused the annealing effect, which leads to an improvement in some electrical parameters of SD, especially in the high electric field region. On the other hand, the energy distribution of the surface states (Nss) was obtained by utilizing the voltage-dependent ideality factor and the effective barrier height, with and without considering the series resistance (Rs) effect. It was observed that Nss values decreased almost as exponentially from the mid-band gap of the semiconductor towards the upper edge of the valance-band. Also, the density of surface states decreased with increasing radiation doses. As a result, almost all diode parameters are affected by irradiation. However, no significant defect has been detected that would affect the stable operation of the diode. Hence, Al/(ZnO-PVA)/p-Si type SD can be used as an MPS-type detector instead of MIS/MOS-type detectors due to some advantages of the organic/polymer interlayer such as being cheap, light per molecule, flexible and requiring low energy consumption.

Charge collection in h-BN neutron detectors at elevated temperatures

Many of the neutron detector applications are in the environments with harsh conditions such as high temperatures. We report here the measurements of charge collection parameters of hexagonal boron nitride (h-BN) detectors at elevated temperatures, including the electron mobility-lifetime product (μτ) and surface recombination field (s/μ). It was found that μτ is increased, while s/μ is decreased as temperature increases. The temperature dependence of the surface recombination field (s/μ) revealed that electrons trapped in the surface states tend to thermally activate to the bulk region at higher temperatures with an activation energy of about 0.22 eV, leading to a reduction in the density of the charged surface states at elevated temperatures. Consequently, the charge collection efficiency is enhanced at elevated temperatures due to a reduced surface recombination field and increased electron mobility-lifetime product. The results suggested that h-BN neutron detectors are favorable for high temperature operation.

Unravelling the silicon-silicon dioxide interface under different operating conditions

Silicon dioxide (SiO2) has played a critical role in the development of high-efficiency silicon (Si)-based photovoltaic devices. Recently, it has experienced a renaissance as an interlayer in many of the new contact passivating structures. Studies have extensively investigated the recombination process at the Si–SiO2 interface, however, only little is known about the impact of temperature on the surface recombination. In this study, we investigate the recombination at the Si–SiO2 interface by varying the temperature, excess carrier density, and dielectric fixed charge. An improved lifetime is observed with increasing temperature. A forming gas anneal is used to improve the passivation quality, however, at higher temperatures, the hydrogenated interface passivation degrades due to increased surface state density. The degradation is stronger for corona-charged SiO2, due to the instability of the corona charge within the dielectric. Using the extended Shockley-Read Hall recombination model, the Si–SiO2 interface defects’ parameters are extracted. Most importantly, we determine the value and the temperature-dependence of the capture cross-sections at this interface.

Concentration dependent thermo-optical properties and nonlinear optical switching behavior of bimetallic Au-Ag nanoparticles synthesized by femtosecond laser ablation

Concentration, morphology and composition-dependent thermal diffusivity changes occurring in bimetallic Au-Ag nanoparticles synthesized by femtosecond laser ablation were investigated using a dual- beam mode matched thermal lens technique. The synthesis utilized the variation in ablation time of silver plate kept immersed in already synthesized gold nanoparticle seeds. Thermal diffusivity values were found to increase both with an increase in concentration of the samples as well as an increase in Ag/Au weight percentage ratio. Au-Ag core–shell and nanoalloy structure show much greater variation in the thermal diffusivity compared to the other samples. A possible explanation could be the modified surface state density of the bimetallic nanoparticles. A single beam z scan technique using an Nd:YAG laser operating at a wavelength of 532 nm was employed for the nonlinear optical characterization of the samples. At a fixed laser input fluence, a switching behavior from saturable absorption (SA) to reverse saturable absorption (RSA) was observed as the ablation time of the silver plate in gold nanoparticle solution increased. The effect of laser input fluence on nonlinear optical properties of core–shell and nanoalloy structures was also studied and the optical limiting threshold of nanoalloy was calculated. The results revealed an increase in the nonlinear absorption coefficient with an increase in input fluence. A linear variation of the limiting threshold was also observed with an increase in input fluence. Thermal diffusivity studies find applications in photo thermal therapies and optical limiting properties find application in optoelectronic switches.

Surface potential in n- and p-GaInP2(100): temperature effect

Surface potentials in chemically etched n- and p-GaInP2(100) are investigated by synchrotron-radiation photoemission spectroscopy at room and liquid-nitrogen temperatures. It is found that at low temperature the surface band bending in both n- and p-GaInP2(100) is reduced so that the surface bands become nearly flat. This effect is explained in the framework of semiconductor surface electrostatics. The proposed model enables quantitative characterization of the surface state spectrum based on the experimentally determined values of the surface potential at different temperatures. In particular, the surface states density values obtained are 2 × 1012 and 7 × 1012 cm–2 for n- and p-GaInP2(100) surfaces, respectively.

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A specific feature of MBE n-Hg0.78Cd0.22Te films is the presence of near-surface graded-gap layers with a high CdTe content, formed during epitaxial growth. The properties of as-grown films and films after As+ ion implantation with ion energy of 200 keV and fluence of 1014 cm−2 were studied. Post-implantation activation annealing was not performed. Test metal–insulator–semiconductor (MIS) structures were created based on as-grown and as-implanted samples by plasma-enhanced atomic layer deposition of Al2O3 insulator films. The admittance of the fabricated MIS structures was measured over a wide range of frequencies and temperatures. When determining the parameters of MIS structures, we used techniques that take into account the presence of near-surface graded-gap layers and series resistance of the HgCdTe film bulk, as well as the high density of slow surface states. It was found that, in as-implanted samples, the donor center concentration in the near-surface layer exceeds 1017 cm−3 and increases with distance from the HgCdTe-Al2O3 interface (at least up to 90 nm). After implantation, the conductivity of MBE HgCdTe film bulk increases markedly. It was shown that, for as-implanted samples, the generation rate of minority charge carriers in the MBE HgCdTe surface layer is significantly reduced, which indicates the appearance of a low defect layer with a thickness of at least 90 nm.

The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures

The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal—oxide—semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state density and volume charge on the total time of ionizing radiation and subsequent annealing at different ionizing-radiation intensities lie on the corresponding common curves Nit(t) and Qot(t). The Nit(t) common curve is determined by the dispersive nature of the transport of hydrogen ions Н+. The observed deviations from this Nit(t) common curve immediately after the end of ionizing irradiation are due to the transient process of the redistribution of Н+ ions. The Qot(t) common curve is determined by relaxation of the volume charge from a system of levels with energies of 0.3 to 1.0 eV by the mechanism of thermal emission. It is shown that the enhanced low-dose-rate sensitivity (ELDRS) for the MOS structures with a thick base oxide at low intensities is determined by the dispersive character of the transport of hydrogen ions Н+.

Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation.

Metal oxide semiconductor/chalcogenide quantum dot (QD) heterostructured photoanodes show photocurrent densities >30 mA/cm2 with ZnO, approaching the theoretical limits in photovoltaic (PV) cells. However, comparative performance has not been achieved with TiO2. Here, we applied a TiO2(B) surface passivation layer (SPL) on TiO2/QD (PbS and CdS) and achieved a photocurrent density of 34.59 mA/cm2 under AM 1.5G illumination for PV cells, the highest recorded to date. The SPL improves electron conductivity by increasing the density of surface states, facilitating multiple trapping/detrapping transport, and increasing the coordination number of TiO2 nanoparticles. This, along with impeded electron recombination, led to enhanced collection efficiency, which is a major factor for performance. Furthermore, SPL-treated TiO2/QD photoanodes were successfully exploited in photoelectrochemical water splitting cells, showing an excellent photocurrent density of 14.43 mA/cm2 at 0.82 V versus the Reversible Hydrogen Electrode (RHE). These results suggest a new promising strategy for the development of high-performance photoelectrochemical devices.

External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers.

We report on the optoelectronic properties of GaN(0001) and (11̅00) surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN(0001) and GaN(11̅00) layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN(11̅00) surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affects their internal quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the internal quantum efficiency is related to the modification of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications.

Theoretical explanation of scanning tunneling spectrum of cleaved (110) surface of InGaAs

The cross-sectional (110) surface of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP hetero-structure grown by molecular beam epitaxy on an InP (001) substrate is characterized by the cross-sectional scanning tunneling microscopy (XSTM). The cleaved (110) surface across the interface between the In<sub>0.53</sub>Ga<sub>0.47</sub>As layer and InP layer is atomically flat but displays slight different image contrast between the two neighbor regions. The scanning tunneling spectroscopy (STS) is used to measure the current/voltage (<i>I-V</i>) spectra. The <i>I-V</i> data of the InGaAs surface and InP (110) surface show the different characteristics. The voltage range of zero-current plateau (apparent band gap) in the <i>I-V</i> spectrum of InP displays the values close to its energy band gaps whereas the plateau ranges in the spectra of In<sub>0.53</sub>Ga<sub>0.47</sub>As are by contrast generally 50% larger than the energy band gap of In<sub>0.53</sub>Ga<sub>0.47</sub>As. The above phenomenon implies the different physical pictures on the tunneling of two surfaces. In the case of InP, the flat band model is feasible since the band edge states existing in the InP (110) surface can prevent the surface from being affected by the tip –induced band bending (TIBB) effect. In contrast, the TIBB effect must be taken into account to explain the <i>I-V</i> spectra of the In<sub>0.53</sub>Ga<sub>0.47</sub>As (110) surface. A statistical analysis of the <i>I-V</i> data of In<sub>0.53</sub>Ga<sub>0.47</sub>As reveals that the width of current plateau in the <i>I-V</i> spectrum is generally between 1.05 eV and 1.20 eV and the current onset points (turn-points) with the plateau for the different spectra are slightly different from each other. We are able to explain quantitatively the above features based on the three-dimensional TIBB model given by Feenstra (<ext-link ext-link-type="uri" xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="http://doi.org/10.1116/1.1606466">2003 <i>J.</i> <i>Vac. Sci. Technol. B</i> <b>21</b> 2080</ext-link>). Our calculation reveals that the parameter of density of surface states (DOSS) is a sensitive parameter responsible for the <i>I-V</i> features mentioned above. According to an appropriate assignment of the value of DOSS, which is generally taken in the scope of (0.8–3.0) × 10<sup>12</sup> (cm<sup>2</sup>·eV)<sup>–1</sup>, we well predict both the width and the onset points of the current-plateau. Moreover, the model also reproduces the line-shapes of the <i>I-V</i> spectra measured on In<sub>0.53</sub>Ga<sub>0.47</sub>As.

A Chaotic Potential of Charged Dislocations in Group III-Nitride Heterojunctions

The structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the junction plane are determined. It is shown that the parameters of the chaotic potential depend on the density of surface states and the concentration of dislocations.

Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor

It is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The presence of an extra built-in charge in the dielectric and fast surface states at the SiO2/Si interface leads to both an increased threshold voltage and decreased saturation current and voltage, decreased slopes of the characteristics of the MOS transistor in the linear and saturation regions, and a decreased structure conductance in the linear region. The gate leakage currents also increase. It is shown that the view and shape of the capacity–voltage characteristics are determined by the value of an extra positive charge in the bulk of the dielectric and the density of fast surface states at the Si/SiO2 interface. These values are correlated to the profile of the distribution of the surface concentration of the process-related impurities adsorbed at the wafer surface during the manufacturing of the device, which allows us to judge the quality of the materials used, adherence to the production conditions, and, if necessary, correct them opportunely as required.

Electrical and Photoelectric Properties of Heterojunctions MoOx/n-Cd1-xZnxTe

The paper presents the results of studies of the optical and electrical properties of МоOx/n-Cd1-хZnхTe semiconductor heterojunctions made by depositing MoOx films on a pre-polished surface of n-Cd1-хZnхTe plates (5 × 5 × 0.7 mm3) in a universal vacuum installation Leybold - Heraeus L560 using reactive magnetron sputtering of a pure Mo target. Such studies are of great importance for the further development of highly efficient devices based on heterojunctions for electronics and optoelectronics. The fabricated МоOx/n‑Cd1‑хZnхTe heterojunctions have a large potential barrier height at room temperature (φ0 = 1.15 eV), which significantly exceeds the analogous parameter for the МоOx/n-CdTe heterojunction (φ0 = 0.85 eV). The temperature coefficient of the change in the height of the potential barrier was experimentally determined to be d(φ0)/dT = -8.7·10-3 eV K, this parameter is four times greater than the temperature coefficient of change in the height of the potential barrier for MoOx/n-CdTe heterostructures. The greater value of the potential barrier height of the МоOx/n-Cd1-хZnхTe heterojunction is due to the formation of an electric dipole at the heterointerface due to an increase in the concentration of surface states in comparison with MoOx/n-CdTe heterostructures, and this is obviously associated with the presence of zinc atoms in the space charge region and at the metallurgical boundary section of the heteroboundary. In МоOx/n‑Cd1-хZnхTe heterojunctions, the dominant mechanisms of current transfer are generation-recombination and tunneling-recombination with the participation of surface states, tunneling with forward bias, and tunneling with reverse bias. It was found that МоOx/n-Cd1-хZnхTe heterojunctions, which have the following photoelectric parameters: open circuit voltage Voc = 0.3 V, short circuit current Isc = 1.2 mA/cm2, and fill factor FF = 0.33 at an illumination intensity of 80 mW/cm2 are promising for the manufacture of detectors of various types of radiation. The measured and investigated impedance of the МоOx/n-Cd1-хZnхTe heterojunction at various reverse biases, which made it possible to determine the distribution of the density of surface states and the characteristic time of their charge-exchange, which decrease with increasing reverse bias.

Charge Transfer Kinetics in the Dark at Oxide Semiconductor/ electrolyte Interfaces

Among all the requisite properties of an inorganic semiconductor, the dynamics of interfacial charge transfer is an important common denominator for numerous technologically important applications such as PEC water splitting, photocatalytic pollutant degradation, or photovoltaic solar energy conversion.Most attention in this regard has been paid to the dynamics of minority carrier transfer; only sporadic studies have focused on majority carrier transfer across the solid/electrolyte interface. However, recent studies have underlined the growing realization that the charge transfer kinetics of both minority and majority carriers are often coupled. Performance optimization of the interfaces must address both these charge transfer pathways such that deleterious carrier recombination can be minimized. Therefore, this study addresses the fundamental and experimental understanding of interfacial charge transfer dynamics at semiconductor/electrolyte interfaces in the dark . A variety of interfaces were studied to gain a unified and self-consistent picture.Firstly, binary n-type TiO2 and WO3 semiconductors were chosen because of their excellent chemical/photoelectrochemical (PEC) stability, high PEC activity, and overall robustness over a wide pH range. Secondly, binary and ternary p-type semiconductors such as copper bismuth oxide (CuBi2O4),silver vanadate (AgVO3),and copper (II) oxide (CuO) were selected to compare their charge transfer kinetics in the dark. Such comparative studies are conspicuously absent in the literature, and in particular, dark current-forward bias potential measurements are lacking for these compounds. Tafel analyses were used to evaluate the standard rate constant, k 0 and the exchange current density, jo in all these cases. Based on these kinetics data, a general conclusion could be made that p-type oxide semiconductors exhibited faster kinetics than their n-type counterparts. For comparison, Pt and fluorine doped tin oxide (FTO) electrodes were included as benchmarks in these experiments. The data also indicated that heterogeneous charge transfer at metal/electrolyte interfaces had faster kinetics compared to the semiconductor/electrolyte interfaces. This contrasting and self-consistent behavior stems from surface state density variations in the two sets of cases. The practical implications of these data are finally discussed.

Characterization and gas sensing properties of graphene/polyaniline nanocomposite with long-term stability under high humidity

Graphene/polyaniline (Pani) nanocomposites (G/Pani) were prepared by in situ chemical oxidative polymerization using different (0–30 wt%) of graphene. According to the characterization, the presence of graphene in Pani matrix reduced the density of surface states and increased the defect density. The partial protonation of Pani and different wt% of graphene showed significant effect on CO2 gas sensing at room temperature and high humidity (ca. 90%). All prepared samples showed dynamic response and rapid recovery time to different concentrations of CO2. The nanocomposite with 20 wt% of graphene exhibited better protonation degree, sensitivity and reversibility to other samples. The sensor responded to 0.5 vol% CO2 gas three times bigger than Pani. The excellent long-term stability (about 18% less than the initial experiment) was obtained for the sensor based on G/Pani after 1 year, which makes it a potential candidate for application in CO2 gas sensor.

Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Thermal quenching of the defect-related photoluminescence (PL) has been widely used to determine the fundamental properties of point defects in GaN such as the activation energy (E t ) and capture cross section. However, in the present work, we have shown using drift-diffusion modeling and experimental analysis that the thermal quenching of defect-related PL from GaN does not only depend of the defect parameters but also is strongly governed by the carrier drift and diffusion in the depletion region. In particular, we have found that these processes significantly influence the slope of PL thermal quenching and temperature T 0 at which the quenching begins. As a result, E t obtained from the Arrhenius plot of the defect-related PL intensity in GaN provides the correct values of the defect activation energy only in the case of low surface state density ( cm−2eV−1) corresponding to the weak surface band bending. However, in the case of high D 0 giving rise to the significant surface band bending, the E t value should be cautiously interpreted because it may not correspond entirely to the real defect activation energy due to the drift-diffusion process. Finally, we have shown that our finding can explain in a coherent manner various anomalous behaviors of PL thermal quenching reported in the literature, such as tunable, abrupt or sample dependent thermal quenching. We believe that our findings can be very interesting for nitride growth technology community and optoelectronic device applications.

Control of the electrophysical properties of a semiconductor-electrolyte interface by means of directed proton transport

This article offers a consistent interpretation of the dynamic behavior of a real interface in measurements. The studied interface consists of a Ge-substrate with a monolayer of dipole molecules and a wet electrode. The gradual removal of protons from the SCR during long-term cyclic polarization of the interface with the blocking potential of the dipole layer shows that hydrogen in germanium exists in the proton form. Hereupon the balance of the electron and proton concentrations in SCR determines the value of the stationary potential, and the excess of the proton concentration over the equilibrium one corresponds to the density of surface states. The inertia of the proton transfer in the SCR with respect to the transfer of electrons and holes determines the screening conditions for the potential in SCR and, therefore, the features of the dynamics of the interface parameters. The enrichment of the surface with electrons facilitates the proton dissolution in the SCR and thereby compensates for the expected increase in interface capacitance due to the increase in accumulated charge. The experimentally confirmed effect of controlled dissolution of protons in the SCR opens the perspective of a new approach to the design of charge storage devices and techniques of electrocoating.