A study of the electro-optie response of a surface-stabilized ferroelectric liquid crystal device has been made for the high drive voltage region. We find an inverse switching memory effect in the polarity to be built up after the trailing edges of the applied voltage pulses. The inverse switching memory effect is observed by applying higher and longer voltage pulses. The effect is considered to be produced by the internal electric field produced by ions, and the internal electric field strength depends on the thickness of the orientational film.
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