Surface Morphology Of Thin Films Research Articles

Influence of Cd salt concentration on the photoconductivity of CdS thin films prepared by chemical bath technique

Herein, a comparative study of the photodetection properties of CdS thin films deposited via the CBD method at different cadmium chloride concentrations of Cd (0.008) M, Cd (0.02) M, and Cd (0.08) M has been reported. The increase in cadmium salt concentration dominated the cluster deposition mechanism of the chemical bath deposition (CBD) method, leading to the cubic crystal phase and the thicker CdS thin films. Also, with the increase in cadmium salt concentration, the photosensivity decreased. After all investigations, it was concluded that the value of photosensivity strongly depends on the film thickness and the quantum confinement effect, as well as the amount of sulfur vacancy of samples grown by the CBD method. The quantum confinement effect of sample Cd (0.008 M) was proved by the blue shift of the optical band gap and the grain size of this sample shown by Transmission Electron Microscope (TEM). The structural properties, surface morphology, compositional properties, film thickness and optical properties of CdS thin films were studied by X-Ray Diffractometer (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), TEM, Energy Dispersive X-ray Spectroscopy (EDXS), Cross-Section Microscopy (CSM), UV–Vis Spectroscopy, and Photoluminescence Spectroscopy (PL), respectively. Besides, the optical sensor characteristics of these samples were analyzed by the I–V curves at a bias voltage of 5V. The results showed more than 200 times the photosensivity of sample Cd (0.008 M) compared to the sample Cd (0.08 M); 265 vs.1.3.

Effect of Ethanolamine and HCl on structural and optical properties of Nickel oxide thin films

In the present work, Nickel Oxide thin films were prepared by spin coating technique. The effects of Ethanolamine and HCl on structural and optical properties of NiO thin films are studied. The structural properties of NiO thin films were examined by X-ray Diffraction (XRD). The amorphous nature of NiO thin films were observed from XRD pattern. FESEM studies of the surface morphology of NiO thin films exhibits smooth and uniform surface with average particle size of 200 nm for Ethanolamine doping sample and 300 nm for HCl doping sample. The functional groups and surface roughness of NiO thin films were investigated by FTIR and 3 D Laser Profilometry. The surface roughness of the prepared samples increases with increasing thickness from 4.49 μm to 6.81 μm. The optical characteristics of the samples were determined by UV Visible Spectrophotometer. This results shows that the prepared NiO thin films exhibits high optical transparency.

Iron-Oxide-Nanoparticles-Doped Polyaniline Composite Thin Films.

Iron-oxide-doped polyaniline (PANI-IO) thin films were obtained by the polymerization of aniline monomers and iron oxide solutions in direct current glow discharge plasma in the absence of a buffer gas for the first time. The PANI-IO thin films were deposited on optical polished Si wafers in order to study surface morphology and evaluate their in vitro biocompatibility. The characterization of the coatings was accomplished using scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), metallographic microscopy (MM), and X-ray photoelectron spectroscopy (XPS). In vitro biocompatibility assessments were also conducted on the PANI-IO thin films. It was observed that a uniform distribution of iron oxide particles inside the PANI layers was obtained. The constituent elements of the coatings were uniformly distributed. The Fe-O bonds were associated with magnetite in the XPS studies. The surface morphology of the PANI-IO thin films was assessed by atomic force microscopy (AFM). The AFM topographies revealed that PANI-IO exhibited the morphology of a uniformly distributed and continuous layer. The viability of Caco-2 cells cultured on the Si substrate and PANI-IO coating was not significantly modified compared to control cells. Moreover, after 24 h of incubation, we observed no increase in LDH activity in media in comparison to the control. In addition, our results revealed that the NO levels for the Si substrate and PANI-IO coating were similar to those found in the control sample.

Novel Dextran Coated Cerium Doped Hydroxyapatite Thin Films.

Dextran coated cerium doped hydroxyapatite (Ca10-xCex(PO4)6(OH)2), with x = 0.05 (5CeHAp-D) and x = 0.1 (10CeHAp-D) were deposited on Si substrates by radio frequency magnetron sputtering technique for the first time. The morphology, composition, and structure of the resulting coatings were examined by scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), atomic force microscopy (AFM), metallographic microscopy (MM), Fourier transform infrared spectroscopy (FTIR), and glow discharge optical emission spectroscopy (GDOES), respectively. The obtained information on the surface morphologies, composition and structure was discussed. The surface morphologies of the CeHAp-D composite thin films are smooth with no granular structures. The constituent elements of the CeHAp-D target were identified. The results of the FTIR measurements highlighted the presence of peaks related to the presence of ν1, ν3, and ν4 vibration modes of (PO43−) groups from the hydroxyapatite (HAp) structure, together with those specific to the dextran structure. The biocompatibility assessment of 5CeHAp-D and 10CeHAp-D composite coatings was also discussed. The human cells maintained their specific elongated morphology after 24 h of incubation, which confirmed that the behavior of gingival fibroblasts and their proliferative capacity were not disturbed in the presence of 5CeHAp-D and 10CeHAp-D composite coatings. The 5CeHAp-D and 10CeHAp-D coatings’ surfaces were harmless to the human gingival fibroblasts, proving good biocompatibility.

Effect of Molar Concentration on the Structural and Optical Properties of the Cd2SnO4 Thin Films

In this paper, cadmium stannate (Cd2SnO4) thin films at four different molar concentrations (1:1, 2:1, 3:1, and 4:1) were prepared at a temperature of (400 oC) using a chemical spray pyrolysis technique and have a thickness of about 400±10 nm. XRD patterns of the prepared thin films showed that the thin films have both a polycrystalline and a cubic structure. FE-SEM and AFM were used to investigate the surface morphology of Cd2SnO4 thin films. The measurement of absorbance and transmittance spectra for films in the range of 300–900 nm was part of the optical properties research. The effect of various molar concentrations of these films on transmittance was investigated, and the results revealed a decrease in transmittance. The allowed direct electronic transmission optical energy gap was calculated, and it was discovered that it decreases as the molar concentrations increase, with a value ranging between (2.61-2.91) eV.

Synthesis of CZTS kesterite by pH adjustment in order to improve the performance of CZTS thin film for photovoltaic applications

Quaternary CZTS (Cu2ZnSnS4) kesterite thin layers were successfully made by electrochemical deposition method. CZTS thin layers were deposited on Indium Tin Oxide (ITO) from an aqueous solution. In this work, the effects of pH adjustment under ambient conditions of CZTS thin films were studied. The as grown samples were investigated by numerous existing characterization systems. The X-ray diffraction (XRD) proves the polycrystalline description of the layer. The average crystallite size is varying from 10 ​nm to 24 ​nm of the films is dependent on the pH of the solution. All the thin films are in the CZTS kesterite phase attributed to A1 mode at 334 ​cm−1 verified by Raman spectroscopy. The SEM and AFM study show that the pH variation of the solution improved the surface morphology and topography of the CZTS thin films which increase several nm in grain size. Moreover, the optical analysis indicates a suitable band gap in the range of 1.5–1.8 ​eV depending upon the sulfurization temperature. It is found that the pH variation affects both the stability and the performance of the high-quality CZTS absorber layer applications. The CZTS layer with 4.80 pH was annealed at 450 ​°C and 500 ​°C, and at these temperatures the band gap was varied. At the end the band gap variations effect on the performance of CZTS based solar cell is being analyzed by using a simulation tool SCAPS-1D.

Enhanced electrical and optoelectronic properties of W doped SnO2 thin films

In the present study, undoped tin oxide (SnO2) and tungsten (W) doped tin oxide (1, 2, 3, 4 and 5 wt% of W doping) thin films were deposited by the homemade spray pyrolysis technique and their structural, microstructural, optical, electrical, and optoelectronic properties are described. X-ray diffraction analysis confirmed that all the prepared thin films belonged to a tetragonal crystal structure with a space group of P42/mnm. The elemental oxidation state of Sn4+, O2− and W6+ was confirmed by the X-ray photoelectron spectroscopy (XPS) analysis. The scanning electron microscopy revealed that the surface morphology of SnO2 thin films was slightly modified by W doping. The presence of Sn, O and W and their elemental compositions were confirmed using the energy dispersive X-ray spectroscopy. The 3 wt% of W doped SnO2 (SnO2:W) thin films showed maximum optical transmittance of about 90% in the visible and NIR region. The direct optical bandgap varied between 3.60 eV and 3.84 eV. Photoluminescence spectra showed noticeable enhancement in the UV emission peak at 362 nm and green emission peak at 525 nm of SnO2:W thin films. The high charge carrier concentration of 2.89 × 1020 cm−3 was observed for 3 wt% of W doping. The Hall mobility of the undoped SnO2 thin films was found to be 94 cm2/Vs. A high figure of merit of 8.30 × 10−3 Ω−1 was obtained for the thin films doped with 3 wt% of W.

Single crystal structure of cobalt and nickel complexes constructed by imidazole ligand and their polycrystalline thin films for nonlinear optical refraction properties

The single crystals of new cobalt and nickel complexes constructed by the imidazole ligand: hexakis(imidazole)-cobalt(II) dichloride tetrahydrate ((C18H24N12Co)Cl2•4(H2O), HICDCTH) and hexakis(imidazole)-nickel(II) acetate dihydrate ((C18H24N12Ni)(CH3COO)2•2(H2O), HINADH) have been obtained and their single crystal structure were determined by X-ray single crystal diffraction. Their polycrystalline thin films on quartz substrates were prepared using in-situ crystallization methods. The surface morphology of the polycrystalline thin films were studied by atomic force microscopy. The nonlinear optical refraction properties of the polycrystalline thin films were investigated by using closed aperture Z-scan technique with 20 picosecond pulses at wavelength 532 nm. Time-dependent density-functional theory with the basis set LanL2DZ were used in theoretically computing their maximum absorption wavelengths, frontier molecular orbitals and molecule′s second hyperpolarizability γ values.

The influence of the physicochemical nature of the components of the V2O5/GaAs, MnO2/GaAs, V2O5/InP, MnO2/InP, TiO2/InP, and SnO2/InP heterostructures and the oxidation conditions on the surface morphology of the synthesised films

The formation of oxide functional films on the surface of semiconductors is a serious technological challenge, which is even more complicated in the nanometre thickness range. It is necessary to form films with specified values of thickness, resistivity, and a certain surface morphology for practical applications. Such films are used in micro- and optoelectronics, environmental monitoring, and alternative energy devices. The goal of this work is to establish the features of the surface morphology of thin films formed as a result of the thermal oxidation of the MnO2/GaAs, V2O5/GaAs, V2O5/InP, MnO2/InP, TiO2/InP, and SnO2/InP heterostructures depending on the physicochemical nature of the components and the oxidation conditions. The synthesis of thin films on the InP and GaAs surfaces was carried out by thermal oxidation under the influence of magnetron-deposited layers of chemostimulator-modifiers. The thickness of the formed films and their composition were determined by laser ellipsometry, X-ray phase analysis, and infra-red spectroscopy. The scanning tunnel and atomic force microscopy were used to determine the morphological characteristics of the films and their dependence on the type of semiconductor substrate, the nature of the chemostimulator-modifier, and the conditions of the thermal oxidation. The application to the GaАs and InP surfaces of the most effective chemostimulator-modifiers (V2O5 and MnO2) of thermal oxidation and higher temperatures of the oxidation process contributed to the formation of smoother and nanostructured films.

Effect of Ga doping on microstructure, morphology, optical and electrical properties of spray deposited CdO thin films

Cadmium oxide (CdO) and gallium (Ga) doped CdO thin films were fabricated successfully onto glass substrate at 400 °C temperature by spray pyrolysis technique and the effect of Ga on microstructure, surface morphology, optical, electrical and Hall effect properties of CdO thin films have been revealed and discussed. X-ray diffraction results indicate that all films are polycrystalline and possess cubic crystal structure. The SEM images reveal that the surface morphology of CdO changes remarkably with increasing Ga doping concentration. EDX investigation confirms the presence of cadmium (Cd), oxygen (O) and gallium (Ga) elements in the deposited films. The optical transmittance of CdO increases continuously with Ga doping up to 3% and then decreases onwards within the same wavelength region. The optical band gap initially increases from 2.47 eV to 2.53 eV, and Urbach energy decreases from 0.55 eV to 0.50 eV when the doping of Ga varies from 0 to 3%. Thereafter, the extinction coefficient, refractive index and energy dissipation factor shows reverse relation above 3% doping of Ga. The electrical resistivity of CdO thin film has been found 5.79 × 10−4 (ohm-cm) and which reduces to 1.23 × 10−4 (ohm-cm) for 3% Ga doping. The temperature dependent electrical resistivity data of deposited films shows that the films possess poor metal-like behaviour. Results of Hall Effect measurement notifies that the carrier of the films is n-type, and Ga doping changes the Hall mobility & carrier concentration of CdO films significantly. The obtained figure of merit of all films is higher than 1.0% Ω−1 and the maximum FOM was found for 3% (8.28 %Ω−1) Ga doped CdO films.

Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering

InGaN thin films were deposited on silicon (100) single crystal substrates by RF magnetron sputtering in an Ar atmosphere, at a pressure of 8 × 10−2 Torr, by using In and GaN targets. To change the In content, x, in the InxGa1-xN ternary alloy, the substrate temperature was varied from 300 up to 500 °C. It was found that the In content decreased with increasing substrate temperature. The optical and structural properties of the InGaN thin films were correlated with the experimental deposition conditions. It was found that the band gap energy increased with the growth temperature. Photoluminescence spectra measured at 20 K showed two broad emission bands centered at 2.3 and 2.9 eV. X-ray diffraction analysis of the InGaN thin films revealed a polycrystalline structure belonging to the hexagonal phase. The surface morphology of the films was analyzed using AFM, showing that the surface roughness increased with temperature. The surface chemistry of the films, investigated by XPS, mainly indicated the formation of Ga-N and In-N bonds. Moreover, from XPS two BVM values at 1.91 and 2.74 eV were found. A depth profile analysis, performed by SIMS, revealed the distribution of In, Ga, and N from the film surface to the bulk.

Ruddlesden\u2013Popper 2D perovskites of type (C6H9C2H4NH3)2(CH3NH3)n\u22121PbnI3n+1 (n\u2009=\u20091\u20134) for optoelectronic applications

Ruddlesden–Popper (RP) phase metal halide organo perovskites are being extensively studied due to their quasi-two dimensional (2D) nature which makes them an excellent material for several optoelectronic device applications such as solar cells, photo-detectors, light emitting diodes (LEDs), lasers etc. While most of reports show use of linear carbon chain based organic moiety, such as n-Butylamine, as organic spacer in RP perovskite crystal structure, here we report a new series of quasi 2D perovskites with a ring type cyclic carbon group as organic spacer forming RP perovskite of type (CH)2(MA)n−1PbnI3n+1; CH = 2-(1-Cyclohexenyl)ethylamine; MA = Methylamine). This work highlights the synthesis, structural, thermal, optical and optoelectronic characterizations for the new RP perovskite series n = 1–4. The demonstrated RP perovskite of type for n = 1–4 have shown formation of highly crystalline thin films with alternate stacking of organic and inorganic layers, where the order of PbI6 octahedron layering are controlled by n-value, and shown uniform direct bandgap tunable from 2.51 eV (n = 1) to 1.92 eV (n = 4). The PL lifetime measurements supported the fact that lifetime of charge carriers increase with n-value of RP perovskites [154 ps (n = 1) to 336 ps (n = 4)]. Thermogravimetric analysis (TGA) showed highly stable nature of reported RP perovskites with linear increase in phase transition temperatures from 257 °C (n = 1) to 270 °C (n = 4). Scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) are used to investigate the surface morphology and elemental compositions of thin films. In addition, the photodetectors fabricated for the series using (CH)2(MA)n−1PbnI3n+1 RP perovskite as active absorbing layer and without any charge transport layers, shown sharp photocurrent response from 17 nA/cm2 for n = 1 to 70 nA/cm2 for n = 4, under zero bias and low power illumination conditions (470 nm LED, 1.5 mW/cm2). Furthermore, for lowest bandgap RP perovskite n = 4, (CH)2MA3Pb4I13 the photodetector showed maximum photocurrent density of ~ 508 nA/cm2 at 3 V under similar illumination condition, thus giving fairly large responsivity (46.65 mA/W). Our investigations show that 2-(1-Cyclohexenyl)ethylamine based RP perovskites can be potential solution processed semiconducting materials for optoelectronic applications such as photo-detectors, solar cells, LEDs, photobatteries etc.

Side chain engineering of [1]benzothieno[3,2-b]benzothiophene (BTBT)-based semiconductors for organic field-effect transistors

[1]benzothieno[3,2-b]benzo-thiophene (BTBT)-based compounds with different side chains, 2-(2-ethylhexyl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (compound 1), 2-(2-ethylhexyl)−7-(thiophen-2-yl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (compound 2), 2-(2-ethylhexyl)−7-(5-octylthiophen-2-yl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (compound 3), and 2-(2-ethylhexyl)−7-(5-(2-ethylhexyl)thiophen-2-yl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (compound 4), were synthesized and characterized as solution-processable small molecular organic semiconductors for organic field-effect transistors (OFETs). The corresponding compounds were employed as active layers for top-contact/bottom-gate OFETs via solution-shearing method and the electrical properties were investigated. The resulting devices exhibited p-channel activity and, especially, thin films of monoalkylated BTBT with additional thiophene ring showed the highest hole mobility up to 0.12 cm2/Vs and current on/off ratio over 107. The analysis of atomic force microscopy (AFM) and X-ray diffraction (XRD) were carried out to correlate surface morphology and microstructure of thin films with the device performance.

Enhancing the ultraviolet photosensing properties of nickel oxide thin films by Zn–La co-doping

In this work, co-doping effects of transition (Zn) and rare-earth (La) elements on the crystalline structure, surface morphology, photoluminescence, optical and photosensing properties of NiO thin films are studied. NiO, NiO:Zn(1%), NiO:La(1%), and NiO:Zn(1%):La(1%) thin films are fabricated using the nebulizer spray pyrolysis (NSP) method. X-ray diffraction study revealed the cubic NiO structure of all the films. Photoluminescence (PL) spectra of thin films exhibit various emission peaks centered at the wavelengths of 387, 414, 437, 451, 477, and 521 nm. The optical bandgap energy ( E g ) values are found to be 3.46, 3.43, 3.39 and 3.33 eV for NiO, NiO:Zn(1%), NiO:La(1%) and NiO:Zn(1%):La(1%) thin films, respectively. The fabricated (Zn, La) co-doped NiO i.e., NiO:Zn(1%):La(1%) photo-detector exhibits highest responsivity ( R ), external quantum efficiency (EQE) and detectivity ( D *) values of 0.50AW -1 , 169% and 14.5 × 10 9 Jones, respectively as compared to NiO, NiO:Zn(1%) and NiO:La(1%) photo-detectors. The present study revealed that the transition and rare-earth elements co-doping can be an effective approach for tuning the various physical properties of semiconducting oxide films.

Characterization of optimized properties for InGaZnO semiconductor and thin film transistor by oxygen partial pressure

The InGaZnO thin films with varied the O2 flow ratios were deposited by a magnetron sputtering system. The effect of O2 content on the structure, surface morphology, optical and electrical properties of InGaZnO thin films is studied. Then, we investigate the relationship between bias stress stability and density of states (DOS) of thin film transistors (TFTs) with various oxygen partial pressure InGaZnO (IGZO) as the channel layer. The temperature-dependent field-effect measurements are used to calculate DOS of IGZO TFTs. With the increase of the oxygen partial pressure, the value of DOS decreases from 2.2 × 1016 to 5.5 × 1015 cm-3. Moreover, the positive gate bias stress of IGZO TFTs are investigated. Under positive gate bias stress, the transfer curves of IGZO TFTs with various oxygen partial pressure show an obvious shift, the value of threshold voltage shift () is 5.1, 2.94, 2 and 0.8 V, respectively. The results suggest that the device with a smaller DOS is more stable than others. Therefore, this study offers a brief and accurate method to demonstrate instability mechanism of IGZO TFTs.

Structural and optical characteristics of thermally evaporated TlGaSe2 thin films

The present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00° which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope image, the film surface was observed almost uniform. Raman spectrum exhibited six peaks around 253, 356, 488, 800, 1053 and 1440 cm−1 associated with possible vibrational mode combinations. Band gap energy of the thin film was determined as 3.01 eV from the analyses of transmission spectrum. Transmission spectrum presented strong Urbach tail and analyses of corresponding region resulted in Urbach energy of 0.66 eV. The structural and optical properties of deposited TlGaSe2 thin films were compared with those of single crystal. This comparison would provide valuable information about influence of thickness on the studied compounds.

Synthesis, characterization and supercapacitive application of nanocauliflower-like cobalt tungstate thin films by successive ionic layer adsorption and reaction (SILAR) method

For the first time, cobalt tungstate (CoWO4) thin films were synthesized by successive ionic layer adsorption and reaction (SILAR) method. The monoclinic crystal structure of CoWO4 film was confirmed from X-ray diffraction (XRD) technique. The elemental, surface morphological, structural, and electrical analyses were executed using Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDAX), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET), two point probe method, and contact angle measurement techniques. The surface morphology of CoWO4 thin film consisted of islands of agglomerated cauliflower-like spherical nanoparticles with hydrophilic nature. The specific surface area of 60 m2 g−1 with an average pore size of 1.10 nm. The CoWO4 thin film electrode exhibited specific capacitance of 1436.5 F g−1 at a scan rate of 2 mV s−1 in 1 M KOH as well as capacitance retention of 94% over 3000 galvanostatic charge discharge (GCD) cycles. Furthermore, flexible solid-state symmetric supercapacitor (FSS-SSC) device assembled using CoWO4 thin films, showed specific capacitance of 101.32 F g−1, specific energy of 14.07 Wh kg−1 and specific power of 1225.25 W kg−1. This work highlights simplistic preparation of CoWO4 thin films for energy storage application.

Transparent SiOxCyHz Barrier Film Prepared by Roll to Roll PECVD

This paper uses plasma-enhanced chemical vapor deposition (PECVD) to successfully fabricate silicon oxide films on silicon dioxide substrates for supporting layers of uncooled infrared focal plane array microbridge structures. In this paper, the thickness, refractive index, growth rate, and other parameters of the films were measured using the XP-2 step meter and ellipsometer. At the same time, atomic force microscopy (AFM) was used to study the surface morphology of the films. The experimental results show that deposition temperature and ICP power are the main factors affecting the growth rate of thin films. Deposition temperature is a crucial factor affecting the surface morphology of thin films.

Качественный и количественный анализ морфологии поверхности порфириновых пленок

The surface morphology of tetraphenylporphyrin thin polycrystalline films – H2TPP and ZnTPP obtained by vacuum condensation under quasi-equilibrium conditions is analyzed by sc. The use of analytical methods for processing images of the organic films surface obtained by standard methods, allows to identify not only qualitative, but also quantitative characteristics of the polycrystalline films structure: the average grain size, grain size distribution, the presence of texture and characteristic of crystallites orientations. It is shown that free based H2TPP tetraphenylporphyrin films have a more pronounced texture and a larger crystallite size than ZnTPP, which is due to the peculiarities of self-organization of molecules, if condensation occurs under the same conditions. The applicability of this method of image analysis for obtaining information about the structure and morphology of the surface of thin organic films during vacuum condensation is shown.

Influence of Synthesizing Temperatures on the Crystallinity, Morphology and Band Gap of CdSe Thin Films

CdSe thin films were deposited using Chemical Bath Deposition (CBD) by maintaining the bath at 20 °C, 40 °C, 60 °C and 80 °C temperatures. The thin films were deposited on ordinary glass substrates then characterized for their crystallinity, morphological and optical properties. From the X-ray Diffraction (XRD) analysis; it was revealed that there was a significant difference in crystallinity and the UV-vis spectroscopy enhanced the study of the energy band gaps which showed a drastic shifting. The study performed on the surface morphologies of the CdSe thin films exhibited a double layer of deposition; but did not show considerable difference from each other for different temperatures. The EDS pattern helped in determining the stoichiometric ratio.