Surface Morphology Of Thin Films Research Articles

High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications

Two-dimensional materials have excellent optoelectronic properties and have great significance in the field of photodetectors. We have prepared a thin film photodetector based on bismuth telluride (Bi2Te3) topological insulator using dual-temperature-zone vapor deposition technology. Due to the high-quality lattice structure of Bi2Te3 and the uniform and dense surface morphology of the Bi2Te3 thin film, the device exhibits excellent photoelectric response and Vis–NIR spectral range. Under 405 nm illumination, the responsivity is 5.6 mA/W, the specific detectivity is 1.22 × 107 Jones, and the response time is 262/328 ms. We designed a photodetector single-point scanning imaging system and successfully achieved high-resolution imaging at a wavelength of 532 nm. This work provides guidance for the application of two-dimensional materials, especially Bi2Te3, in the fields of photodetectors and imaging.

Synthesize and Investigate Structural, Surface Morphology, Optical, and Electrical Characterization of Cu2Se Thin Films by Thermal Evaporation Technique

Synthesize and Investigate Structural, Surface Morphology, Optical, and Electrical Characterization of Cu2Se Thin Films by Thermal Evaporation Technique

Characterization and Ambient Temperature Hydrogen Sulfide Sensing of Annealed NiO-MnO₂ Thin Films Prepared via Jet Nebulizer Spray Pyrolysis

A jet nebulizer spray pyrolysis technique to synthesize NiO-MnO2 thin films was demonstrated. These nanosheets were annealed at 350, 450 and 550 °C for 2 hours. The thin films surface morphology and structure were characterized using scanning electron microscopy, XRD, and UV spectroscopy. Subsequently, utilized as gas sensors for the detection of hydrogen sulphide gas. The introduction of NiO into MnO2 nanosheets significantly improved the gas-sensing performance. Notably, the gas-sensing response of the NiO-MnO2 nanosheet sensor surpassed that of both NiO and MnO2 alone, reaching a notable value of 165 when detecting 100 ppm hydrogen sulfide gas with the NiO-MnO2 thin film sensor. A remarkable feature of the NiO-MnO2 thin film sensor is its accelerated response time, registering at 10 seconds when exposed to 100 ppm of hydrogen sulfide gas. The mechanism underlying gas sensing and the factors contributing to the enhanced gas response of NiO-MnO2 thin film is thoroughly discussed. From a broader perspective, these developed sensors present a novel platform for the identification and monitoring of hydrogen sulfide gas, showcasing significant advancements in gas-sensing technology.

Optimization of Post-Annealing Temperature of RF Magnetron-Sputtered ZnO Thin Films for Enhancing Performances of UV Photodetectors

In this study, we examined the surface morphology and crystal structure of RF-sputtered ZnO thin films that were annealed at various temperatures. Also, we fabricated UV photodetectors with an Au-ZnO-ITO sandwich structure, utilizing the thin films annealed at 600 °C. The surface roughness of the film initially increases and then decreases as the annealing temperature rises, and the crystalline quality improves with an increase in the annealing temperature. Due to the Schottky heterojunction formed by the Au-semi contact, the fabricated UV photodetector exhibits a responsivity of 7.91 mA W−1 under 405 nm UV light. And the device demonstrates high response stability and rapid response sensitivity, with a swift rise time of 80 ms at a light intensity of 2.56 mW cm−2.

Impact of fractal dimension and lateral correlation length on surface plasmon resonance activity in sputtered silver layers

Fractal and optical characteristics of self-affine surfaces of silver(Ag) thin films deposited through direct current (dc) magnetron sputtering as a function of thickness are investigated and explored here. The surface morphology of Ag thin films is characterized by field emission electron microscopy, and atomic force microscopy technique. The cube counting algorithm is used to extract the fractal dimension of Ag thin film. The surface roughness (interface width) shows monotonic increases with film thickness, while the other parameters, such as lateral correlation length, roughness exponent, and fractal dimension exhibit linear variation with thickness. Our findings reveal distinctive scaling behaviors, with scaling exponents α, β, and 1/z indicating unique growth characteristics. The interface width w increases as a power law of thickness t, w(t)∝tβ, with β=0.39± 0.007, and the lateral correlation length ξ grows as ξt∝t1/z with 1/z=0.14± 0.002. The roughness exponent extracted from height-height correlation analysis is α=0.61–0.41. The self-affine nature of the Ag thin films is further confirmed by the autocorrelation function. X-ray photoelectron spectroscopy (XPS) is used to the confirm the growth of Ag thin film. Additionally, we have studied the role of fractal dimensions and lateral correlation length (ξ) on the surface plasmon resonance (SPR) of Ag thin film. Our results indicate a red-shifting behavior of SPR with increasing interface width (w), lateral correlation length (ξ), and fractal dimensions. This study suggests the significance of not only the roughness exponent and fractal dimension but also the local surface slope in SPR activity in Ag thin films.

Spinel nickel ferrite (NiFe2O4) materials synthesized via spray-pyrolysis for electrochemical supercapacitor application

To explore potential applications of NiFe2O4-based supercapacitors in various energy storage systems, including portable electronic devices, electric vehicles, and grid energy storage, highlighting the advantages and challenges of using NiFe2O4 in these applications. To identify and propose future research directions for further improving the performance of NiFe2O4 supercapacitors. In the study focuses on optimizing concentration of synthesis to achieve desirable structural and electrochemical properties, characterizing the synthesized materials, and assessing their specific capacitance, energy density, power density, cycle stability, and rate capability. The different molar precursor solutions were utilized for the formation of NiFe2O4 thin films by using the cost-effective spray pyrolysis technique. The impact of different molarities on the structural, morphological, elemental, optical, and charge storage performance of NiFe2O4 thin films has been studied. In the XRD studies identified the cubic crystalline structure with Fd-3 m space group symmetry of NiFe2O4. The FE-SEM shows the grain-like surface morphology of NiFe2O4 thin films. The EDAX study reveals that NiFe2O4 thin films were stoichiometric. Bandgap energy values of the thin films were observed in the range of 1.97 to 2.2 eV with allowed direct band gap transitions. The maximum specific capacitance for NiFe2O4 thin film was found to be 707 Fg−1 at 2 mVs−1 with the wider potential window of − 0.8 to + 1 .6 V in 1 M KOH aqueous electrolyte. GCD study confirms the pseudocapacitive behavior of NiFe2O4 thin films. The maximum specific energy and specific power were found to be 83.88 WhKg−1 and 5.294 KWkg−1 at a current density of 0.002 Ag−1. Such as spinel ferrite NiFe2O4 thin film electrodes as an excellent candidate material for electrochemical supercapacitor applications.

Tuning of structure, surface morphology and optical properties of spray-coated nickel tin oxide thin films by heat treatment

In this work, nickel tin oxide (NiSnO3) in a 1:1 ratio was synthesized using a simple spray pyrolysis technique followed by annealing at 450 °C for different time durations. The X-ray diffraction (XRD) revealed the polycrystalline nature with perovskite structure of NiSnO3 without the formation of any secondary phases. Annealing improved the crystallinity of the films. The annealed films exhibited a preference for orientation along the (310) plane. The largest crystallite size was obtained for 4 h of annealed film. The scanning electron microscopy (SEM) images of the films distinctly illustrate enhanced crystallinity following the annealing process. Energy-dispersive X-ray spectroscopy (EDS or EDX) indicates that the film possesses a near-stoichiometric composition. All the films resulted in more than 70 % transmittance in the visible region except for 8 h annealed. The gradual reduction of energy bandgap was observed for the sample. The four peaks at 358 nm, 415 nm, 436 nm, and 460 nm were observed in photoluminescence (PL) spectra corresponding to near band emission and defects related emissions respectively. The determined optical parameters from the present study indicate that the 4-h annealed film holds promise as a favourable option for optoelectronic and photonic devices.

Investigation of effective parameters on Fe/Ta thin films by plasma focus device: number of shots and distance from tip anode

This experimental investigation is the first to generate a surface iron-tantalum (Fe/Ta) alloy as a sublayer-layer using a plasma focus device. Examining how ion beams from a plasma focus device alloy iron and tantalum with varying melting points is one of the key objectives of this study. Fe/Ta thin film nanostructure and surface morphology were also examined. The distance from the tip anode and the varied number of shots are the experimental variables. Although tantalum's melting point (3020 ∘C\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^\\circ{\\rm C}$$\\end{document}) is generally known to be near to that of iron (2862 ∘C\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^\\circ{\\rm C}$$\\end{document}), it is possible that iron vaporizes and partial alloying of iron with tantalum occurs before tantalum reaches its melting point. Fe/Ta thin film identification techniques include scanning electron microscopy, mapping of cross-section, energy dispersive X-ray spectroscopy, and X-ray diffraction pattern. Additionally, the composition of multilayer structures is examined using EDS. In conclusion, the results of the X-ray diffraction pattern showed that the number of shots had a significant impact on the residual strain degree of the thin films that were deposited. Furthermore, structures made of FeTa and Fe2Ta were produced. Additionally, photos from scanning electron microscopy and cross-section mapping verify that the sample with five shots at an 8 cm distance from the tip anode formed a uniform Fe/Ta alloy structure. The sample with five shots at a distance of 4 cm from the tip anode formed micro-island structures, as seen by scanning electron microscopy, with decreasing distance. Furthermore, depth elemental distribution revealed that the optimal depth of penetration in a homogenous material to develop alloying is best determined by number of PF shots.

Synthesis, characterization, and antifungal properties of chrome-doped hydroxyapatite thin films

The development of thin films of chromium-doped hydroxyapatite (20CrHAp) deposited on silicon substrate by the spin coating method was realized for the first time. A coherent investigation of the physicochemical properties of 20CrHAp thin films was also carried out for the first time. The obtained thin films were studied by various techniques such as, scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) investigations and fractal analysis. By scanning electron microscopy (SEM) studies were obtained valuable information about the surface morphology of the 20CrHAp thin films. The zeta potential (ZP), Dynamic light scattering (DLS) and ultrasound measurements (US) were used in order to evaluate the stability of 20CrHAp suspension. The ratio between the hydrodynamic diameter obtained by DLS and the particle diameter obtained by SEM was 1.6. The SEM results on 20CrHAp thin films suggested that the sample possess a conglomerate of nanoparticles unevenly distributed on their surface. The surface morphology of the 20CrHAp thin films was studied with the aid of atomic force microscopy (AFM). The AFM topography of the 20CrHAp thin film's surface highlighted that the thin films present the morphology of a continuum deposited layer composed of non-uniform particle conglomerates. The presence of hydroxyapatite on the surface of silicium substrate was revealed by the results of Fourier transform infrared spectroscopy (FTIR) investigations. The antifungal evaluation of the 20CrHAp thin films was performed using Candida albicans 10,231 ATCC fungal strain. The antifungal assays results depicted that the 20CrHAp thin films inhibited the fungal biofilm formation. More than that, the results of the antifungal studies revealed that 20CrHAp thin films exhibited good inhibitory effects on the development of the fungal cells on their surface. Furthermore, our investigation delves into the realm of Minkowski Functionals and fractal/multifractal analysis as applied to the examined films. Our findings reveal that nanocomposite coatings containing 20CrHAp exhibit robust antifungal characteristics, suggesting their viability as a compelling solution for advancing antifungal devices in biomedical contexts.

Electrochromic properties of sputter-grown Nb18W16O93 thin films

Large-area electrochromic films with high stability under high temperatures and humid conditions are essential for the commercialization of smart windows. In this paper, we introduce a new cathodic coloration Nb18W16O93 thin film produced using sputtering that exhibits excellent electrochromic modulation, superior chemical stability, and cyclic durability owing to its stable host structure for ion intercalation. The electrochemical properties of the as-grown Nb18W16O93 thin films, including charge density and transmittance modulation, were enhanced with increasing deposition temperatures. The annealed Nb18W16O93 thin films (grown at room temperature) exhibited comparable electrochromic performances to films grown at high temperatures. Electrochromic devices composed of annealed and high-temperature-grown Nb18W16O93 thin films exhibited excellent durability and nearly identical transmittance modulation, even after 10,000 test cycles. Furthermore, degradation of the surface morphology of the Nb18W16O93 thin films after etching in heated water was alleviated, suggesting high stability under hot and humid conditions, whereas the flat surface of the room-temperature-grown WO3 thin films degraded significantly.

Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

In this paper, the p-GaN/n-In0.27Al0.73N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In0.27Al0.73N heterojunction diode was investigated. Based on the preparation of the InXAl1-XN thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the InXAl1-XN thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the InXAl1-XN film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In0.27Al0.73N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In0.27Al0.73N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In0.27Al0.73N heterojunction LED, which provides a new reference for the fabrication of LED using InXAl1-XN alloy material.

A mechanistic approach to determine the relationship between film structure, electronic properties, and photocatalytic activity of ALD ZnO thin films on glass gibers

Atomic layer deposition (ALD), a high-conformality thin-film deposition technique, offers the opportunity to immobilize photocatalytic materials on high surface area substrates. Textile substrates are inexpensive, easily accessible materials with a fibrous nature, making them high surface area scaffolds for photocatalytic applications. This study applied ZnO thin-film coatings to fabric structures with different numbers of ALD cycles. The effect of coating thickness on the surface and electronic properties of the films and their photocatalytic properties were investigated. SEM, XRD, PL, and UV–Vis were used to examine the surface morphology, crystal structure, defects, and optical properties of the ZnO thin films. As the film thickness increased, the crystal sizes and the number of defects in the structure increased. Contact angle and Hall Effect measurements revealed that these structural defects are present on the surface of the films. Optimum wettability, mobility, and photocatalytic efficiency values were observed in the 15-nm coated samples, resulting in the highest photocatalytic activity and a turning point.

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films.

Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to formAs8clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using 'defect analysis technology' and 'diamond structure identification' in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number ofAs8clusters decreases and film density increases. Increasing incident velocity increases the irregular movement ofAs8clusters in air, and their deposition on the film surface affects the morphology of the film, and the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number ofAs8clusters in the film decreases or the As8clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

Unraveling the Heat- and UV-Induced Degradation of Mixed Halide Perovskite Thin Films via Surface Analysis Techniques.

In recent years, organic-inorganic hybrid perovskite materials have become one of the most promising materials in the new generation of solar cells. These perovskites can provide excellent photoelectric properties after a simple fabrication process. Although perovskite solar cells have achieved high power conversion efficiency, instability concerns regarding material exposure to heat, moisture, air, and UV light present hindrances to commercialization. In this study, three kinds of perovskites (MAPbI3, MAPbI3-xBrx, and MAPbI3-xClx) were used to investigate the crystal stability upon exposure to heat and UV light. SEM, XRD, and FTIR were used to observe the surface morphology, crystal structure, and functional groups of the perovskite thin films. XPS was used to examine the surface composition and chemical state of the perovskite thin films under different conditions. Among these three types of perovskites, it was found that the MAPbI3-xBrx crystal demonstrated the best stability. ToF-SIMS was used to confirm the molecular distribution of the MAPbI3-xBrx films upon exposure to heat and UV light at different depths. ToF-SIMS revealed that [Pb]+ and [PbI]+ aggregated at the interface between the perovskite and ITO substrate after 14 days of thermal treatment. On the other hand, [Pb]+ and [PbI]+ were distributed uniformly after 3 days of UV exposure. This study systematically analyzed and revealed the thermal- and UV-induced degradation process of three perovskite films by using surface analysis techniques. It was concluded that bromine-doped perovskite films had better stability, and UV light caused more severe damage than heat.

Highly Efficient Flexible Photodetectors Based on Pb-Free CsBi3I10 Perovskites.

Perovskites have made remarkable advancements in optoelectronics owing to their high light absorption coefficient, tunable bandgap, and long charge diffusion. Nonetheless, the practical applications of Pb-based perovskites have been hindered by the instability and toxicity of Pb, especially in flexible electronics, which require high biosecurity and low toxicity. Hence, the development of stable Pb-free perovskite materials has gained increasing attention. In this study, we synthesized stable CsBi3I10 Pb-free perovskites outside the glovebox and improved the optoelectronic and mechanical performances of the CsBi3I10-based flexible devices through polyvinylcarbazole (PVK) doping. Flexible photodetectors with the device structure of PET/ITO/PEDOT:PSS/CsBi3I10:PVK/Au was fabricated. The results indicated that the introduction of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) reduced the surface roughness of the flexible PET substrate, while PVK doping further improved the surface smoothness of CsBi3I10 thin films, thereby enhancing the interfacial charge transportation. Moreover, PEDOT:PSS and PVK acted as stepwise hole transport layers in the photodetectors. The device demonstrated a maximum responsivity of 0.3 A/W, detectivity of 2.6 × 1011 Jones, and a response time of 102 μs at 650 nm. After subjecting it to 1000 bending tests, the light current retained 80% of its initial value. This study presents a universally applicable method for controlling the surface morphology of a flexible perovskite thin film.

Microstructure and optical properties of ZnAlO films prepared by Magnetron sputtering

ZnAlO thin films with different Al concentrations were prepared on glass and silicon substrates by Magnetron sputtering in this paper. Scanning electron microscopy (SEM), X-ray diffraction (XRD), spectrometer and other instruments were used to analyze the surface morphology, microstructure, transmittance and Raman spectrum of the films. The results showed that trace Al doping significantly increased the surface morphology and size of ZnAlO thin films; The low doped ZnAlO thin film exhibits a good preferred orientation. As the Al doping concentration increases, the main growth direction of the crystal gradually shifts from (101) to (103), and the grain size decreases with the increase of doping concentration during low doping; When the wavelength of ZnAlO film is less than 330 nm, the transmittance of the film is almost zero; When the wavelength is greater than 350 nm, the transmittance of the thin film decreases with the increase of Al doping concentration, and there is a blue shift trend with the increase of Al concentration. When the wavelength is between 420-900nm, the average transmittance of ZnAlO thin film can reach over 90%, and the transmission performance is good; The ZnAlO thin films all have structural characteristic peaks of wurtzite with a frequency of about 437 cm−1, and the Raman peak position does not move with the increase of Al concentration.

High-performance solar-blind photodetectors based on Ta-doped ZnSnO3 single crystal thin films

High-quality Ta-doped ZnSnO3 single crystal thin films were grown on LiTaO3 substrates by pulsed laser deposition (PLD) method, and the effects of Ta doping on the lattice structure, surface morphology, electronic structure and photodetector performance of ZnSnO3 thin films are studied in detail. When the Ta doping content is 1 %, the [0001]-oriented ZnSnO3 thin film present the highest quality, which the optical band gap (3.75 eV), the smoothest surface roughness (0.83 nm), and the biggest carrier concentration (4.03 × 1019 cm−3). For the solar-blind photodetectors (PDs), based on these excellent characteristics, the 1 % Ta-doped ZnSnO3 PD exhibits large light-to-dark current ratio (>103), responsivity (21.37 A/W), detectivity ((3.63±0.71) ×1011 Jones) and external quantum efficiency (∼1.04× 104 %) under 254 nm UV light at an applied bias of 5 V. This study suggests that Ta doping can effectively improve the optoelectronic performance of ZnSnO3 PDs, laying the foundation for their application.

Adsorption and Structuration of PEG Thin Films: Influence of the Substrate Chemistry.

This study investigates polyethylene glycol (PEG) homopolymer thin film adsorption on gold surfaces of controlled surface chemistry. The conformational states of physisorbed PEG are analyzed through polarization modulation infrared reflection-absorption spectrometry (PM-IRRAS). The PM-IRRAS principle is based on specific optical selection rules allowing the detection of surface-specific FTIR response of thin polymer films on the basis of differential reflectivity at the polymer/substrate interface for p- and s-polarized light. The intensification of the electric field generated at the PEG/substrate interface for p-polarized IR light in comparison with s-polarized light permits the analysis of PEG chain anisotropy and conformational changes induced by the adsorption. Results showed that PEG adsorbs on model substrates having a rather hydrophilic character in a way that the PEG chains spread parallel to the surface. In the case of a very hydrophilic substrate, the adsorbed PEG chains are in a stable thermodynamic state which allows them to arrange and crystallize as stacked crystalline lamellae after adsorption. The surface topography and morphology of the PEG thin films were also investigated by atomic force microscopy (AFM). While in the bulk state, PEG crystallizes in the form of large spherulites; on substrates whose adsorption is favored by surface chemistry, PEG crystallizes in the form of stacked lamellae with a thickness equal to 20 nm. Conversely, on a hydrophobic substrate, the PEG chains do not crystallize and adsorption occurs in the statistical coil state.

Nanomechanical and Microstructural Characterization of Biocompatible Ti3Au Thin Films Grown on Glass and Ti6Al4V Substrates.

Ti-Au intermetallic-based material systems are being extensively studied as next-generation thin film coatings to extend the lifetime of implant devices. These coatings are being developed for application to the articulating surfaces of total joint implants and, therefore, must have excellent biocompatibility combined with superior mechanical hardness and wear resistance. However, these key characteristics of Ti-Au coatings are heavily dependent upon factors such as the surface properties and temperature of the underlying substrate during thin film deposition. In this work, Ti3Au thin films were deposited by magnetron sputtering on both glass and Ti6Al4V substrates at an ambient and elevated substrate temperature of 275 °C. These films were studied for their mechanical properties by the nanoindentation technique in both variable load and fixed load mode using a Berkovich tip. XRD patterns and cross-sectional SEM images detail the microstructure, while AFM images present the surface morphologies of these Ti3Au thin films. The biocompatibility potential of the films is assessed by cytotoxicity tests in L929 mouse fibroblast cells using Alamar blue assay, while leached ion concentrations in the film extracts are quantified using ICPOEMS. The standard deviation for hardness of films deposited on glass substrates is ∼4 times lower than that on Ti6Al4V substrates and is correlated with a corresponding increase in surface roughness from 2 nm for glass to 40 nm for Ti6Al4V substrates. Elevating substrate temperature leads to an increase in film hardness from 5.1 to 8.9 GPa and is related to the development of a superhard β phase of the Ti3Au intermetallic. The standard deviation of this peak mechanical hardness value is reduced by ∼3 times when measured in fixed load mode compared to the variable load mode due to the effect of nanoindentation tip penetration depth. All tested Ti-Au thin films also exhibit excellent biocompatibility against L929 fibroblast cells, as viability levels are above 95% and leached Ti, Al, V, and Au ion concentrations are below 0.1 ppm. Overall, this work demonstrates a novel Ti3Au thin film system with a unique combination of high hardness and excellent biocompatibility with potential to be developed into a new wear-resistant coating to extend the lifetime of articulating total joint implants.

Investigation of surface morphology, optical and electronic properties of Mg2Si thin films on Si(111)

Investigation of surface morphology, optical and electronic properties of Mg2Si thin films on Si(111)