Single crystal silicon carbide has been widely used in many fields due to its excellent physical and chemical properties. However, these special properties of silicon carbide can lead to surface defects and subsurface damage in precision machining processes. In this research, high-speed scratching experiments and molecular dynamics simulations were used to study the surface formation mechanism of nanoscale scratches along the [1-210] and [1-100] crystal orientations of silicon carbide. For both the simulations and experiments, different scratching crystal orientations result in the formation of different amorphous patterns. The angle between the scratching orientation [1-210] and the amorphous pattern is 60°, while the angle between scratching orientation [1-100] and the amorphous pattern is 30°. The stress concentration during the scratching process along the orientations [1-210] and [1-100] is mainly located at the two edges and one edge of the amorphous patterns, respectively. The amorphous patterns along the < 1-210 > directions on the (0001) plane are caused by dislocations and slips on the {10-10} plane. This study reveals the material deformation mechanism and removal mechanism of silicon carbide along different crystal orientations scratching, providing theoretical guidance for the nanoscale machining of silicon carbide.
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