Beta-phase gallium oxide (β-Ga2O3) has garnered significant attention in recent years as an ultra-wide bandgap semiconductor material. However, its surface layer damage behavior and machining deformation mechanism remain poorly understood. In this work, a systematic comparative study was conducted through nanoindentation and nanogrinding for monocrystalline β-Ga2O3 (−201) crystal plane. Transmission electron microscopy is employed as the primary characterization method. The results show that the microstructural evolution patterns of monocrystalline β-Ga2O3 can be categorized into four stages, i.e. stacking faults, twins, slip bands, and cleavage cracks are observed sequentially. According to the tests results, subsurface damage diagram models based on nanoindentation and nanogrinding are established, both of which exhibit the above evolution patterns as the indentation depth and grit depth of cut increases. However, there are some differences. In the nanogrinding process, nanocrystals and amorphous layers were found near the ground surface, which are related to the high strain rate grinding conditions and the unique material properties of monocrystalline β-Ga2O3 with low stacking fault energy. The results in this work contribute to an enhanced understanding of the deformation characteristics of monocrystalline β-Ga2O3 at macro and micro scales, while offering valuable insights for achieving damage control in ultra-precision machining processes.
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