Restricted accessMoreSectionsView PDF ToolsAdd to favoritesDownload CitationsTrack Citations ShareShare onFacebookTwitterLinked InRedditEmail Cite this article Thompson J. M. T. and Ziese Michael 2000Colossal magnetoresistance, half metallicity and spin electronicsPhil. Trans. R. Soc. A.358137–150http://doi.org/10.1098/rsta.2000.0524SectionRestricted accessColossal magnetoresistance, half metallicity and spin electronics J. M. T. Thompson J. M. T. Thompson Google Scholar Find this author on PubMed Search for more papers by this author and Michael Ziese Michael Ziese Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, UK () [email protected] Google Scholar Find this author on PubMed Search for more papers by this author J. M. T. Thompson J. M. T. Thompson Google Scholar Find this author on PubMed Search for more papers by this author and Michael Ziese Michael Ziese Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Road, Sheffield S3 7RH, UK () [email protected] Google Scholar Find this author on PubMed Search for more papers by this author Published:15 January 2000https://doi.org/10.1098/rsta.2000.0524AbstractThe development of spin–electronic devices based on oxide magnets is reviewed. After a discussion of colossal magnetoresistance in magnetic perovskites and an introduction of the concept of half metallicity, spin–electronic devices such as ferromagnetic tunnel junctions, grain–boundary junctions, ferromagnet–superconductor hybrids and spin transistors are presented in detail. The review concludes with an outlook on future developments. 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Thompson Article InformationDOI:https://doi.org/10.1098/rsta.2000.0524Published by:Royal SocietyPrint ISSN:1364-503XOnline ISSN:1471-2962History: Published online15/01/2000Published in print15/01/2000 License: Citations and impact Keywordsspin transistorcolossal magnetoresistancetunnel junctionspin electronics