Substrate Growth Temperature Research Articles

Selective nucleation of iron phthalocyanine crystals on micro-structured copper iodide.

Morphological and structural control of organic semiconductors through structural templating is an efficient route by which to tune their physical properties. The preparation and characterisation of iron phthalocyanine (FePc)-copper iodide (CuI) bilayers at elevated substrate temperatures is presented. Thin CuI(111) layers are prepared which are composed of isolated islands rather than continuous films previously employed in device structures. Nucleation in the early stages of FePc growth is observed at the edges of islands rather than on the top (111) faces with the use of field emission scanning electron microscopy (FE-SEM). Structural measurements show two distinct polymorphs of FePc, with CuI islands edges nucleating high aspect ratio FePc crystallites with modified intermolecular spacing. By combining high substrate temperature growth and micro-structuring of the templating CuI(111) layer structural and morphological control of the organic film is demonstrated.

The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850–950°C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported.

Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy

Precipitation free boron (B)-doped as-grown p+-BaSi2 layer is essential for the BaSi2 p-n junction solar cells. In this article, B-doped p-BaSi2 layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (TS) and B temperature (TB) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 1019 cm−3 at room temperature for TS = 600 and TB = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the TS was raised to 650 °C and the TB was decreased to 1350 °C, the p reached 6.8 × 1019 cm−3, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.

Improvement of critical current densities in SmBa2Cu3Oy, films with BaHfO3 nano-rods using low temperature growth technique

We studied growth substrate temperature dependent morphologies of BaHfO3 (BHO) nano-rods for SmBa2Cu3Oy, (SmBCO) films with BHO fabricated by pulsed laser deposition (PLD) method. The morphology of BHO nano-rods within the SmBCO matrix could be controlled by changing substrate temperatures adoping a Low Temperature Growth (LTG) technique. Using the LTG technique, we could fabricate SmBCO films showed c-axis orientation even at low substrate temperature during deposition without a degradation of superconducting properties, which is one of the most advantages of the LTG technique. In this study, we found an optimal morphology of the BHO nano-rods and the morphology was fine, straight and various growth directions. The BHO nano-rods were more effective to improve the Jc in a magnetic field than other morphologies of the BHO nano-rods.

The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells

The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga)Se2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga]+[In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature.

Electronic Polarization at Pentacene/Polymer Dielectric Interfaces: Imaging Surface Potentials and Contact Potential Differences as a Function of Substrate Type, Growth Temperature, and Pentacene Microstructure

Interfaces between organic semiconductors and dielectrics may exhibit interfacial electronic polarization, which is equivalently quantified as a contact potential difference (CPD), an interface dipole, or a vacuum level shift. Here we report quantitative measurements by scanning Kelvin probe microscopy (SKPM) of surface potentials and CPDs across ultrathin (1–2 monolayer) crystalline islands of the benchmark semiconductor pentacene thermally deposited on a variety of polymer dielectrics (e.g., poly(methyl methacrylate), polystyrene). The CPDs between the pentacene islands and the polymer substrates are in the range of −10 to +50 mV, they depend strongly on the polymer type and deposition temperature, and the CPD magnitude is correlated with the dipole moment of the characteristic monomers. Surface potential variations within 2 monolayer (3 nm) thick pentacene islands are ∼15 mV and may be ascribed to microstructure (epitaxial) differences. Overall, the microscopy results reveal both strong variations in i...

Tuning the properties of VO2 thin films through growth temperature for infrared and terahertz modulation applications

Results are reported on tuning the electrical and optical properties of sputter-deposited vanadium dioxide (VO2) thin films through control of substrate growth temperature (Ts). As Ts increases from 550 to 700 °C, the morphology changes from granular to smooth film and finally to rough film. X-ray diffraction shows the presence of VO2 along with additional weak features related to the presence of non-stoichiometric phases. Electrical measurements show the phase transition to change from abrupt to gradual as both the below- and above-transition resistivities vary with Ts. The transition and hysteresis dependences observed in electrical resistivity are similarly observed in infrared transmission. Terahertz transmission measurements show that high conductivity above the phase transition is more important in achieving high modulation depth than obtaining high resistivity below the transition. We attribute changes in the electrical and optical properties to the formation of V and O vacancies, which result in diverse valence states from the ideal V4+ of VO2. Low Ts produces material with V5+ states resulting in higher resistivity in both the insulating and metallic phases. Alternatively, high Ts introduces material with V3+ states leading to lower resistivity in the insulating phase but slightly higher resistivity in the metallic phase.

Physical Properties of Titanium Oxide Thin Films Prepared by DC Magnetron Sputtering: Influence Substrate Temperature and O2/Ar in the Gas Mixture

Titanium oxide thin film compounds were grown on p-type Si (100) and BK7 glass as substrate using reactive DC magnetron sputtering. The effect of temperature growth on structural, optical and morphological properties was investigated. By means of X-ray diffraction (XRD) the phase composition was characterized. UV–Vis-NIR spectroscopy was used for reflection and transmission measurements of deposited thin film layers. Atomic force microscopy was used to evaluate and compute the surface roughness changes for different temperatures growth. The XRD results show that the temperature growth effects on the phase formation and structure. Increasing the substrate growth temperature would result in change of film thickness due to different phase and structure formation. The calculated band gap from optical measurements of the thin films shows a decrease at higher substrate temperature growth.

A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting Diodes

Methods used to measure the temperature of AlxGa1−xN based ultraviolet light emitting diodes (UV LEDs) are based on optical or electrical phenomena that are sensitive to either local, surface, or average temperatures within the LED. A comparative study of the temperature rise of AlxGa1−xN UV LEDs measured by micro-Raman spectroscopy, infrared (IR) thermography, and the forward voltage method is presented. Experimental temperature measurements are provided for UV LEDs with micropixel and interdigitated contact geometries, as well as for a number of different packaging configurations. It was found that IR spectroscopy was sensitive to optical properties of the device layers, while forward voltage method provided higher temperatures, in general. Raman spectroscopy was used to measure specific layers within the LED, showing that growth substrate temperatures in the flip-chip LEDs agreed more closely to IR measurements while layers closer to the multiple quantum wells (MQWs) agreed more closely with Forward Voltage measurements.

Large area single crystal (0001) oriented MoS2

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, the potential for exciting physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area single crystal Molybdenum Disulfide (MoS2) thin films. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) oriented sapphire yielded highly oriented single crystal MoS2 films. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

Very rapid growth of aligned carbon nanotubes on metallic substrates

Aligned carbon nanotubes were grown on metallic substrates using a microwave plasma-enhanced chemical vapor deposition system. The substrates were Ni and Cu, and the catalyst was an Fe–Si alloy thin film. The effects of substrate and catalyst characteristics and growth temperature were studied. We show, via the use of a microwave shield, and with optimized catalyst thickness and growth temperature, that carbon nanotubes (CNTs) with a length of up to 2.15mm and an unprecedently high growth rate of 177μmmin−1 can obtained. Non-isothermal growth was performed to investigate the growth kinetics and therefore to obtain the activation energies of CNTs grown on Ni and Cu. Very similar activation energies for the growth of CNTs on Ni and Cu substrates were determined to be 101.5 (1.05eV) kJmol−1 and 102.3 (1.06eV) kJmol−1, respectively.

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC

The growth of homoepitaxial layers on off-oriented 6H-SiC substrates proceeds via step flow growth. Such epilayers can exhibit irregularities like step bunching, splicing or crossover of steps. The effects of the substrate off-orientation and growth temperature show an influence on formation of surface irregularities. The mean features seem to be given by the growth mode competition of two-dimensional growth to the step-flow growth.

ZnO‐Based Transparent Conductive Thin Films: Doping, Performance, and Processing

ZnO‐based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium‐tin‐oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO‐based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low‐temperature, and high‐speed deposition technologies. In addition, we highlighted the methods of producing ZnO‐based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum‐processing‐parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO‐based transparent conductive films.

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

The effects of NH3 flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (101¯0) bulk GaN, and semipolar (112¯2), (202¯1) bulk GaN substrates. Enhanced indium incorporation was observed on both (101¯0) and (202¯1) surfaces relative to c-plane, while reduced indium incorporation was observed on (112¯2) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

Deposition of Carbon Nanotubes on CMOS

We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-μm CMOS integrated circuits. The low substrate temperature growth (450 °C) was achieved by using hot filament (1000 °C) to preheat the source gases (C2H 2 and NH3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors).

Influence of Supersaturation and Spontaneous Catalyst Formation on the Growth of PbS Wires: Toward a Unified Understanding of Growth Modes

High quality stoichiometric lead sulfide (PbS) wires were synthesized by a simple chemical vapor deposition (CVD) process using pure PbS powder as the material source. Growth mechanisms were systematically investigated under various growth conditions, with three modes of growth identified: direct vapor-liquid-solid (VLS) wire growth nucleating from the substrate surface, bulk PbS crystallites by vapor-solid (VS) deposition, and subsequent VLS growth nucleating on top of the bulk deposition through spontaneously formed catalyst particles. Furthermore, we found that these growth modes can be organized in terms of different levels of supersaturation, with VS bulk deposition dominating at high supersaturation and VLS wire growth on the substrate dominating at low supersaturation. At intermediate supersaturation, the bulk VS deposition can form larger crystallites with domains of similarly oriented wires extending from the flat facets. Both predeposited catalysts and spontaneously formed Pb particles were observed as nucleation catalysts, and their interplay leads to various interesting growth scenarios such as reversely tapered growth with increasing diameter. The VLS growth mechanism was confirmed by the presence of Pb-rich caps revealed in an elaborate cross-sectional transmission electron microscopy (TEM) experiment after focused ion beam milling in a modified lift-out procedure. Temperature-dependent photoluminescence (PL) of PbS wires was performed in the mid-infrared wavelength range for the first time, demonstrating strong light emission from band edge, blue-shifted with increasing temperature. The high optical quality of PbS wires may lead to important applications in mid-infrared photonics. The substrate growth temperature as low as 400 °C allows for silicon-compatible processing for integrated optoelectronics applications.

Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

Cuprous oxide (Cu2O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu2O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu2O at temperatures above 250 K, reaching 62 cm2/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu2O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

Single-crystalline aluminum grown on MgAl2O4 spinel using molecular-beam epitaxy

Al thin films were grown on MgAl2O4 spinel substrates using solid-source molecular-beam epitaxy. The structural properties of Al layers were systematically investigated as a function of substrate orientation and growth temperature. Scanning electron microscopy and atomic force microscopy show that low growth temperatures lead to smoother and more coalesced Al films. X-ray diffraction and electron backscatter diffraction (EBSD) measurements demonstrate that Al layers are single crystalline and coherently grown on both (100)- and (111)-oriented spinel substrates. EBSD data also clearly reveal a high density of twin domain structures in Al films grown on (111) spinel substrates, and all twin boundaries were determined to be Σ3 boundaries. High-resolution transmission electron microscopy was used to confirm the presence of twin structures. Al grown on (001) spinel roughens more easily than Al grown on (111) spinel at higher growth temperatures. It is suggested that Al surface energy and thermal expansion mismatch play a critical role in the evolution of surface morphology of Al thin films grown on MgAl2O4 spinel.

Morphology-Controlled Flame Synthesis of Single, Branched, and Flower-like α-MoO3Nanobelt Arrays

We report an atmospheric, catalyst-free, rapid flame synthesis technique for growing single, branched, and flower-like α-MoO(3) nanobelt arrays on diverse substrates. The growth rate, morphology, and surface coverage density of the α-MoO(3) nanobelts were controlled by varying the flame equivalence ratio, the source temperature, the growth substrate temperature, and the material and morphology of the growth substrate. This flame synthesis technique is a promising, alternative way to synthesize one-dimensional metal oxide nanostructures in general.

The Effect of Substrate Temperature on the Structure and Morphology of Titanium Nitride Compounds Grown by DC Magnetron Sputtering

The TiN thin films were deposited on p-type silicon (100) substrates using reactive planar DC magnetron sputtering system. The target was 99.99% pure Ti. The reactive sputter gas was a mixture of Ar (99.999%) and N2 (99.999%) with the ratio Ar (97%) and N2 (3%) by volume. Structural characterization of the coating was done using X-ray diffraction (XRD). The surface roughness of the coating was determined using an Atomic Force Microscope (AFM). The reflectivity of thin films was investigated by a spectrophotometer system. The X-ray diffraction measurements showed that by increasing the substrate temperature during the growth, change in crystalline structure will occur. The crystallite size of the films determined by Scherrer’s equation, and the crystallite size measured by AFM also increased by increasing the substrate growth temperature. The surface reflectivity measurements indicate that by increasing the substrate growth temperature, the optical properties of the films changes. The change in optical properties and crystalline structure of the films indicate that substrate growth temperature plays an important role in structure and morphology of the grown layers.