This article addresses the properties of stepped misfitting interfaces and their energetic preference to planar misfitting interfaces. It highlights: (a) the purely geometrical or rigidlike, (b) the rigid (unrelaxed) energetic, and (c) the relaxed energetic properties of stepped interfaces. In (a), we address (1) the accommodation of misfit by the step or ledge mode through the cancellation of the mismatch, that builds up along a terrace, by the forwardpattern advance effected by a step,i.e., the relative displacement of atomic patterns on either side of the interface as observed in crossing a structural ledge along the interface, (2) the sideways (shear) pattern advance which seems to be energetically undesirable, (3) the need for tilt-type misfit dislocations to accommodate the misfit normal to the interface, and (4) the fact that at {III}fcc(face-centered cubic)/{110}bcc(body-centered cubic) interfaces with rhombic symmetries, the misfits, as well as the pattern advances, are interrelated through the ratior = b/a of nearest-neighbor distances in the crystals. In (b), we exploit the rigid model approach that (1) yields ideality criteria for minimum energy and provides energetic justification for the step mode of misfit accommodation, (2) confirms that the average terrace widthl[inx defined by this mode also meets the condition for positive energy gain, and (3) defines the upper and lower energy bounds to provide a perspective of the system energetics. In (c), the foregoing considerations are refined by a transition to the harmonic (elastic) model to yield (1) the dependence of the mean energy per atom of a stepped interface on interfacial misfit and pattern advance, as well as the dependence of the mean energy per atom of a planar interface on misfit, (2) expressions for the stresses related to the atomic interaction between opposing terraces, (3) atomic displacements that might be probed by modern analytical techniques, and (4) resolved shear stresses and normal stresses that may facilitate the formation of glide dislocations in the presence of applied stresses. The boundary in a two-dimensional space—spanned by misfit and pattern advance—between regions where stepped interfaces are more stable than planar ones has been determined, suggesting that a critical misfit exists above which only planar interfaces are stable. Whereas the resolved shear stress related to the formation of structural ledges may facilitate the formation of dislocations in the presence of a subcritical applied stress, the corresponding displacements (bending) of atomic planes are probably observable only with strain contrast electron microscopy techniques.
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