Film Stress Research Articles

Investigating the influence of pressure on the ignition and oxidation behavior of EV33 alloy

The study investigates ignition and oxidation behavior of Mg-3Nd-3Gd-0.2Zr-0.2Zn (wt.%) (EV33 alloy) in air and varying pressure. EV33 exhibits easy ignition in air but not under specific pressure conditions. Surface microstructure evolution and detailed discussion of ignition mechanisms using oxidation mechanism and residual stress of oxide film are presented. Findings suggest a correlation between alloy ignition and oxide film rupture. Surface oxidation film rupture is the direct cause of ignition in magnesium alloys, and this phenomenon has been observed and documented for the first time. The residual stresses calculated under atmospheric conditions and at pressures of 0.05 MPa, 0.1 MPa, and 0.15 MPa (with air as the pressure medium) are as follows: 0.282 GPa, 0.561 GPa, 2.271 GPa, and 5.242 GPa.

Deposition of a low-stress diamond film on stainless steel with a Mo/Mo-N interlayer

Depositing an adhering diamond film on stainless steel is still challenging. In this work, Mo/Mo-N film is used as an interlayer to solve the problem. The results show that diamond film with good adhesion is obtained when the interlayer with the N2/Ar ratios of 50 %–100 % is used. It is ascribed to the formation of Mo2N phase in the interlayer through which it is more difficult for carbon atoms to diffuse than Mo phase. On the Mo/Mo-N interlayer, carbon atoms are easily gathered and a new phase MoC appeared as well as Mo2C phase at the interface of diamond/interlayer. Thermal expansion of MoC is obviously lower than that of Mo2C, resulting in the lower stress of diamond film. And MoC offers higher bond strength between the diamond and the interlayer compared to Mo2C phase. As a result, the diamond film presents good adhesion.

A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs

A new wafer warpage model is proposed for the full process design of trench field‐plate (FP) power metal‐oxide‐semiconductor fileld‐effect transitors (MOSFETs) using large‐sized wafer. Trench FP power MOSFETs feature a deep trench and thick oxide at the wafer surface. Wafer warpage occurs due to the stress imbalance between the front and back sides of the wafer. This warpage leads to significant problems with transport errors in manufacturing equipment. This issue is expected to become even more crucial as lateral pitch narrowing is employed to reduce on‐resistance. In this study, two methods are compared to estimate the warpage of a 200 mm diameter Si‐wafer after trench etching and oxidation process. The mechanical stress generated by the oxidation process in several cell units is calculated using a 3D simulation. In the first approach, wafer warpage is converted from the displacement of the cell units. In the second approach, wafer warpage is estimated based on the surface film stress, which is calculated in the 3D simulation. The second approach shows good agreement with experimental results and is applicable to the 300 mm diameter Si process. This method yields more accurate measurements than the method using displacement.

Atomic insight into residual stress and microstructure evolution of amorphous carbon heterostructured films induced by multi-stage phase transformation of high-entropy alloys

The residual stress has significant effects on the microstructure and service performance of films. With good toughness and low stacking fault energy, high-entropy alloy (HEA) can act as dopant to reduce the residual stress of films via self-plastic deformation. Nevertheless, the microscopic mechanism buried deep under the surface is difficult to study by experiments and the dynamic evolution cannot be observed, which the biggest obstacle to investigate the corresponding solutions is. In this paper, diamond-like carbon (DLC) models with different CoCrFeNi HEA doping ratios (1:2, 1:4, 1:6, and 1:8) were designed by molecular dynamics method. The effects of CoCrFeNi doping percentage on the structure and residual stress of this heterostructured films were investigated, and the mechanism of residual stress reduction was revealed. The results show that the phase transformation of HEA causes stress fluctuations in DLC films. The stress fluctuations at different orientations of the heterostructured films is gradually shifted to the right with the increase of HEA percentage, and the difference in stress level between the initial and final strain is significantly decreased. Meanwhile, when the doping ratio is 1:2, the compressive stresses inside the films is lower and the generation of stacking faults is later. With the increase of the HEA doping ratio, the proportion of C atoms with sp3 and sp2 hybridization structures is decreased significantly, and the percentages of the distorted C–C bond length and distorted C–C-C bond angle are also reduced. Therefore, HEA doping affects the number of hybrid atoms and the distribution of bond characteristics in DLC films, which leads to the decrease of the residual stress of the heterostructured films.Graphical

Alleviating internal stress in diamond-like carbon films for enhanced tribological performance under high contact pressure via interface texturing

Diamond-like carbon (DLC) films have found widespread applications across numerous fields due to their exceptional properties. Nevertheless, their significant internal stress has restricted their further utility, particularly in scenarios involving high-contact pressure conditions. In response to this challenge, we fabricated diamond-like carbon films with nano-depth interface texture. This nano-depth interface texturing technique helps alleviate the internal stress within the carbon film, thereby enhancing the tribological performance of diamond-like carbon films with textured interfaces, especially under high contact pressure. We successfully fabricated textured carbon films with a thickness of 1 μm, which exhibited excellent tribological performance even under pressures exceeding 1 GPa. Through atomistic molecular dynamics simulations, internal stress testing, and cross-sectional transmission electron microscopy imaging, we observed that the incorporation of nano-depth interface texturing resulted in an approximate 47.62 % increase in the thickness of the transition layer between the silicon substrate and the carbon film. Furthermore, there was a notable reduction of about 30 % in the internal stress exhibited by the carbon films. These findings are expected to expand the application of carbon films under higher contact pressure and facilitate the production of thicker films.

Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes

Polycrystalline silicon (poly-Si) significantly expands the properties of the ICT miracle material, silicon (Si). Depending on the grain size and shape and grain boundary structure, the properties of poly-Si exceed what single-crystal (c-Si) and amorphous (a-Si) silicon can offer, especially for radio frequency (RF) applications in microelectronics. Due to its wide range of applications and, on the one hand, its theoretically and technologically challenging microstructure, poly-Si research is the most timely (Ding et al 2020 Mater. Charact. 161 110174; Zhao and Li 2019 Acta Mater. 168 52–62). In this report, we describe how we simulate and analyse the phenomena and mechanisms that control the effect of poly-Si deposition parameters on the structure of the deposited poly-Si films using classical molecular dynamics simulations. The grain shape and size, degree of crystallinity, grain boundary structure and the stress of poly-Si films are determined depending on the growth temperature, temperature distribution in the growing film, deposition flux, flux variation and the energy transferred to the film surface due to the deposition flux. The main results include: (i) the dependence of the crystallinity profile of the deposited poly-Si films on the stress, temperature and the different parameters of the deposition flux, (ii) growth modes at the early stages of the deposition, (iii) interaction and stability of seed crystallites at the early stage of the deposition of poly-Si films and the transition from the isolated crystallite growth to the poly-Si growth, (iv) interplay of the temperature, crystallinity, crystal shape and heath conductivity of different Si phases, (v) four different stages of crystallite growth are described: nucleation, growth, disappearance and retardation.

Extremely enhanced friction and wear performance of hydrogen-free DLC film at elevated temperatures via Si doping

Hydrogen-free diamond-like carbon (DLC) films have garnered significant attention as a highly efficient solid lubrication material, but poor high-temperature lubrication and wear resistance limit their further application. Here, silicon-doped DLC (Si-DLC) films with different Si contents were deposited using a superimposed HiPIMS-DCMS deposition system to improve their high-temperature lubrication and wear resistance performance. The influence of Si content on the microstructure, mechanical and high-temperature friction and wear behavior of Si-DLC films was investigated. The results showed that Si-DLC films had a dense structure and nanoscale smooth surface. The Si doping enhanced the adhesion strength and relieved the residual stress of Si-DLC films, but decreased the hardness and Young's modulus. Meanwhile, Raman and XPS spectroscopy revealed significant local structural changes in Si-doped DLC films. Furthermore, the results showed that DLC films doped with low Si content displayed excellent tribological performance at elevated temperatures due to the graphite lubricating layer on the surface of wear marks. Specifically, Si-DLC film with 3.31 at% Si had an ultra-low average friction coefficient of 0.04 at 450 °C and still provided effective lubrication at temperatures up to 500 °C. In contrast, pure DLC film failed to lubricate at 450 °C due to the severe graphitization transition and Si-DLC film with 17.47 at% Si quickly failed to lubricate at 200 °C due to the SiC and SiO2. This work sheds light for the high-temperature application of DLC films doped with low Si content by superimposed HiPIMS-DCMS deposition system.

Compressive stress reduction in sputter-deposited yttrium aluminum nitride (Y0.2Al0.8N) thin films for BAW resonators with high electromechanical coupling

In the past decade, rare earth elements have found increasing interest in enhancing the piezoelectric coefficient of aluminum nitride (AlN) thin films. Until now, scandium has been the most successful rare earth element to enhance the piezoelectric coefficient (d33) up to 600 %. In this research paper, we present a 250 % increase in d33 to 12.5 pC/N for sputter-deposited yttrium alloyed aluminum nitride (Y0.2Al0.8N) thin films compared to pure AlN. However, this increase in d33 comes with a substantial increase in compressive layer stress well above 1 GPa. Therefore, a chamber pressure sweep technique is introduced, resulting in a 40 % reduction in the stress level without significantly affecting the crystallographic film parameters to facilitate device integration. Even more, high compressive stress in thin films is a critical concern in piezoelectric MEMS devices such as bulk acoustic wave (BAW) resonators, as it can adversely affect the piezoelectric material properties and hence, the electromechanical performance. For this purpose, we demonstrate that the pressure sweep technique improves the electromechanical coupling factor of Y0.2Al0.8N to 7.02 %, being substantially above the reference value of 6.02 % set by pure AlN. In summary, the findings from this study may stimulate further effort to integrate YxAl1-xN thin films in BAW filter devices for future telecommunication applications.

Some Polyaniline Blends Films Physical Characteristics

The casting technique has been successfully used to prepare films with polyaniline (PAni) blends. Films made from the (PMMA ,PAni ), PS, and POE at consistent concentrations have a thickness of 50 micro meters. By using XRD and FTIR spectroscopy, the PAni Blends films are identified. Using this method, the presence of the films' distinctive bonds was discovered. Electrical characteristics showed that, the conductivity of PAni blend sheets measured at room temperature is as follows: for PAni blends made with PMMA, PS, and PEO, respectively: (5.18, 9.23 and 0.12) 10-9 S.cm-1. The tensile stress and hardness numbers of the numerous PAni blend films can differ from one another depending on the mechanical characteristics. The results also indicated that the polymers can be used with a very thin layer in photovoltaic cell applications.

Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition

Ga2O3 is an ultrawide-band-gap semiconductor with excellent properties and promising applications in the electronic and optoelectronics. For acting as the substrate for heteroepitaxial Ga2O3 films, Si has the advantages of wafer-level size, cheap price and nice compatibility whereas also perform the disadvantage of large thermal mismatch. In this paper, the apparent flower-like defects are exhibited on the macroscopic surfaces of annealed Ga2O3 films deposited on (100), (110) and (111) oriented Si substrates by atomic layer deposition (ALD) method. The reason is ascribed to the different thermal expansion coefficients between Ga2O3 and Si induced compressive and tensile stresses. The Al2O3 or HfO2 buffer layer intercalated between Ga2O3 films and Si substrates via successive ALD process suppress the flower-like defects effectively while the surface roughnesses are low to be 1.290 nm and 2.393 nm, respectively. XRD spectra demonstrate that buffer layer indeed relieves the stress of Ga2O3 films on Si substrates while the amorphous Al2O3 has better influence than the polycrystalline HfO2. The results are helpful to the improvement of growth quality and device property of Ga2O3.

Suppression of crack formation in wafer-scale amorphous SiNx films by residual hydrogen-ligands manipulation

Plasma-Enhanced Chemical Vapor Deposition (PECVD) of amorphous silicon nitride (SiNx) thin films is a critical procedure in microelectronics serving as a surface passivation layer and dielectric barrier. However, intrinsic film stress continuously builds up along with PECVD growth, leading to film cracking. How to achieve crack-free PECVD amorphous SiNx film within a large thickness range remains a critical unresolved challenge in semiconductor industry. In this study, we revealed that high residual NH ligands from the NH3 precursor could induce excessive tensile strain at the SiNx/Si wafer interface and consequently aggravate SiNx film crack formation. With a heating pretreatment on the wafer, residual H ligands were effectively reduced to achieve homogenous chemical composition in SiNx film. As a result, the crack number declined ∼42% and the remaining crack length was substantially shorter in contrast to the original SiNx film. This work demonstrates the crucial role of residual ligands on internal strain regulation and points out a pathway to achieve crack-free PECVD SiNx films in industrial manufacturing.

Structural Optimization Design of Magnetoelectric Thin-Film Antenna for Bandwidth and Radiation Enhancement.

The acoustically actuated nanomechanical magnetoelectric (ME) antennas represent a promising new technology that can significantly reduce antenna size by 1-2 orders of magnitude compared to traditional antennas. However, current ME antennas face challenges such as low antenna gain and narrow operating bandwidth, limiting their engineering applications. In this paper, we enhance the bandwidth and radiation performance of ME antennas through structural optimization, leveraging theoretical analysis and numerical simulations. Our findings indicate that optimizing the inner diameter of the ring-shaped ME antenna can elevate the average stress of the magnetic layer, leading to improved radiation performance and bandwidth compared to circular ME antennas. We establish an optimization model for the radiation performance of the ME antenna and conduct shape optimization simulations using COMSOL Multiphysics. The results of the Multiphysics field optimization align with the stress concentration theory, demonstrating a strong correlation between the radiation performance and bandwidth of the ME antenna with the average stress of the magnetic film. The resonant frequency in the thickness vibration mode is determined to be 170 MHz. Furthermore, shape optimization can enhance the bandwidth by up to 104% compared to circular ME antenna structures of the same size.

Design, Fabrication, Characterization, and Simulation of AlN-Based Piezoelectric Micromachined Ultrasonic Transducer for Sonar Imaging Applications.

To address the requirements of sonar imaging, such as high receiving sensitivity, a wide bandwidth, and a wide receiving angle, an AlN PMUT with an optimized ratio of 0.6 for the piezoelectric layer diameter to backside cavity diameter is proposed in this paper. A sample AlN PMUT is designed and fabricated with the SOI substrate-based bulk MEMS process. The characterization test result of the sample demonstrates a -6 dB bandwidth of approximately 500 kHz and a measured receiving sensitivity per unit area of 1.37 V/μPa/mm2, which significantly surpasses the performance of previously reported PMUTs. The -6 dB horizontal angles of the AlN PMUT at 300 kHz and 500 kHz are measured as 68.30° and 54.24°, respectively. To achieve an accurate prediction of its characteristics when being packaged and assembled in a receive array, numerical simulations with the consideration of film stress are conducted. The numerical result shows a maximum deviation of ±7% in the underwater receiving sensitivity across the frequency range of 200 kHz to 1000 kHz and a deviation of about 0.33% in the peak of underwater receiving sensitivity compared to the experimental data. By such good agreement, the simulation method reveals its capability of providing theoretical foundation for enhancing the uniformity of AlN PMUTs in future studies.

Effects of substrate bias voltage on conductivity and internal stress of TiN films

In order to make the service life of microelectronic devices longer, titanium nitride electrode films need to meet the requirements of high electrical conductivity and low internal stress. In this paper, the effect of substrate bias voltage on the properties of titanium nitride films prepared by direct current (DC) reactive magnetron sputtering was studied systematically. The changes of titanium nitride films properties were investigated in detail from the aspects of resistivity, growth rate, crystal orientation, roughness and internal stress. The results show that the introduction of substrate bias voltage is conducive to the formation of dense titanium nitride films. Considering that the resistivity and internal stress of titanium nitride film vary with substrate bias voltage, the film deposited at substrate bias voltage of -100 V is selected as the electrode film material with the best performance (resistivity of 47.5 μΩ·cm, roughness of 1.1 nm and internal stress of -5.6 GPa).

A Practical Approach for Determination of Thermal Stress and Temperature-Dependent Material Properties in Multilayered Thin Films.

Multilayered thin films are essential to most microelectro-mechanical systems (MEMSs). The reliability and predictability of the behavior of such systems, especially when intended for usage at high temperatures or in harsh environments, demand the consideration of thermo-mechanical properties of the individual films of the multilayer arrangement during the design stage. This paper introduces a newly derived analytical model for the convenient indirect determination of the temperature-dependent Young's modulus and the thermally induced stress of individual layers within a multilayered thin film system, i.e., a multilayer-adapted Stoney equation. It is based on sample curvature measurement and requires data from only a single experiment. Experimental and numerical investigations of the new models are carried out using a five-layered sample of a RuAl metallization system developed for wireless high-temperature acoustic sensing. The results highlight the usability of the new model in practical MEMS analysis, enabling insights into complex layer stacks by overcoming current experimental limitations.

P‐109: Investigation of Low Residual Stress Anti Reflection Coating with High Hardness for Display Applications

Anti reflection coating with high hardness on the OLED display surface was studied to improve the wear resistance and visibility of OLED. However, the high residual stress inside the multilayer thin film configuration of anti reflection coating has been a problem and the improvement is necessary. In this study, the residual stress and optical properties variation on various deposition conditions on the thin film were investigated. In addition, we suggested new coating structure using nanocomposites to overcome the residual stress of films.

Residual Stress Mitigation in Perovskite Solar Cells via Butterfly-Inspired Hierarchical PbI2 Scaffold.

Residual stress in metal halide perovskite films intimately affects the photovoltaic figure of merit and longevity of perovskite solar cells. A delicate management of the crystallization kinetics is critical to the preparation of high-quality perovskite films. Only very limited methods, however, are available to regulate the residual stress of a perovskite film in a controllable manner, particularly for a perovskite film fabricated by a two-step method. Here, we demonstrate the construction of a hierarchical PbI2 scaffold inspired by Archaeoprepona demophon butterfly by combining an interlayer guided growth of porous structure and nanoimprinting. The hierarchically structured PbI2 that emulates the physical structure of the butterfly wing scale permits unimpeded permeation of organic amine salts and sufficient space for volume expansion during the crystallization process, accompanied by preferential perovskite growth of a defectless (001) crystal plane. The optimized perovskite film outperforms the control with reduced residual stress and defect density. Consequently, perovskite solar cells with a respectable power conversion efficiency reaching 23.4% (certified 23%) and an impressive open-circuit voltage of 1.184 V can be achieved. The target device can maintain 80% of initial efficiency after maximum power point tracking under illumination for 700 h. This work expands the range of engineering toward PbI2 by exploring a simultaneously tailored morphology and crystallinity and highlights the significance of a hierarchical PbI2 scaffold as an alternative choice to mitigate residual stress in a two-step processed perovskite active layer and boost the longevity of perovskite solar cells.

Effect of heat treatment processes on the Cu-electrodeposited through glass vias (TGV) plate

Based on laser-induced deep etching technology and through-hole filling techniques, TGV interposers were successfully fabricated. The residual stress in the Cu overburden film directly affects the yield improvement after subsequent grinding of the interposer. Therefore, we studied the evolution of residual stress, microstructural changes, and micro-nano mechanical properties within the Cu overburden film after heat treatment at different temperatures. Residual stress analysis using the sin2Ψ method with an X-ray diffractometer (XRD) indicates that during the process of increasing temperature from 100°C to 200°C, the internal residual stress in the Cu overburden film changes from compressive stress to tensile stress. Furthermore, the maximum absolute value of the residual stress, 70.09 MPa, appears at room temperature, and the minimum absolute value of the residual stress, 15.59 MPa, occurs after the heat treatment process at 200°C. Electron backscatter diffraction (EBSD) microstructural analysis shows that the application of heat treatment can effectively accelerate static recrystallization (SRX), promote a higher proportion of high-angle grain boundaries (HAGB), and refine grain size. Additionally, a (001) preferred orientation at high residual stress states and a (111) preferred orientation at low residual stress states are observed. Nanoindentation test results indicate that the Cu overburden film treated at 100°C has the most potential for removal during the grinding process.

Temperature-Dependent Residual Stresses and Thermal Expansion Coefficient of VO2 Thin Films

This study aims to investigate the thermomechanical properties of vanadium dioxide (VO2) thin films. A VO2 thin film was simultaneously deposited on B270 and H-K9L glass substrates by electron-beam evaporation with ion-assisted deposition. Based on optical interferometric methods, the thermal–mechanical behavior of and thermal stresses in VO2 films can be determined. An improved Twyman–Green interferometer was used to measure the temperature-dependent residual stress variations of VO2 thin films at different temperatures. This study found that the substrate has a great impact on thermal stress, which is mainly caused by the mismatch in the coefficient of thermal expansion (CTE) of the film and the substrate. By using the dual-substrate method, thermal stresses in VO2 thin films from room temperature to 120 °C can be evaluated. The thermal expansion coefficient is 3.21 × 10−5 °C−1, and the biaxial modulus is 517 GPa.

Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films.

The undoped and tungsten (W)-doped vanadium dioxide (VO2) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3-5%) on the electrical, optical, structural, and thermo-mechanical properties of VO2 thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400-750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO2 thin film decreases from -0.276 GPa to -0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO2 thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO2 thin films.