Abstract We report on successful growth on InP substrates of InGaAsSb-based strain-compensated multiquantum-well (SC-MQW) structures with band-gap wavelengths longer than 2 μm. For SC-MQW samples with four quantum wells, the use of InGaAsSb instead of InGaAs as a barrier layer suppressed the thickness modulation significantly, and its use as a well layer increased the photoluminescence peak wavelength by more than 100 nm. The number of wells in the InGaAsSb/InGaAsSb SC-MQW could be increased from 4 to 30 by adjusting the net strain to be 0%. The absorption coefficient of the 30-period SC-MQW sample was approximately 7000 cm-1 at a wavelength of 2.1 μm.